2989
Abstract: IDT7188S 7188L70 IDT7188 IDT7188L 7188S25
Text: CMOS Static RAM 64K 16K x 4-Bit IDT7188S IDT7188L Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a
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IDT7188S
IDT7188L
IDT7188
22-pin,
D22-1)
IDT7188S/L
11/xx/99
2989
IDT7188S
7188L70
IDT7188L
7188S25
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IDT7188
Abstract: IDT7188L IDT7188S 7188 dip 2989
Text: IDT7188S IDT7188L CMOS Static RAM 64K 16K x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a
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IDT7188S
IDT7188L
IDT7188
22-pin,
IDT7188S/L
11/xx/99
x4033
IDT7188L
IDT7188S
7188 dip
2989
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2989
Abstract: 7188L70 7188S25
Text: IDT7188S IDT7188L CMOS Static RAM 64K 16K x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a
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IDT7188S
IDT7188L
IDT7188
22-pin,
D22-1)
IDT7188S/L
11/xx/99
x4033
2989
7188L70
7188S25
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sensor 3414
Abstract: 79-3405-52-03 79-3381-55-04 circular connector
Text: Serie 718 718 Ü TI 620 702 709 710 711 712 719 423 425 440 581 678 680 682 720 Sensor Steckverbinder Serie 718 M8x1 Sensor connectors series 718 (M8x1) Kabelsteckverbinder • Rundsteckverbinder M8x1 mit Schraubverriegelung oder Schnappverriegelung 8mm
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67/IP
76usf
sensor 3414
79-3405-52-03
79-3381-55-04
circular connector
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64 CERAMIC LEADLESS CHIP CARRIER LCC
Abstract: L7C164CC20 L7C164WC12 L7C164WC15 L7C164WC20
Text: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Common I/O q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum q Low Power Operation
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L7C164/166
MIL-STD-883,
CY7C164/166
24-pin
22/24-pin
22/28-pin
L7C164
L7C166
64 CERAMIC LEADLESS CHIP CARRIER LCC
L7C164CC20
L7C164WC12
L7C164WC15
L7C164WC20
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L7C164CC20
Abstract: L7C164WC12 L7C164WC15 L7C164WC20
Text: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Common I/O q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum q Low Power Operation
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L7C164/166
MIL-STD-883,
CY7C164/166
24-pin
22/24-pin
22/28-pin
L7C164
L7C166
L7C164CC20
L7C164WC12
L7C164WC15
L7C164WC20
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64 CERAMIC LEADLESS CHIP CARRIER LCC
Abstract: L7C164CC20 L7C164WC12 L7C164WC15 L7C164WC20
Text: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION ROW SELECT 8 O ROW ADDRESS CONTROL The L7C164 and L7C166 provide asynchronous unclocked operation with matching access and cycle times.
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L7C164/166
L7C164
L7C166
L7C164,
L7C166KC20
L7C166KC15
L7C166KC12
L7C166KM25
L7C166KM20
64 CERAMIC LEADLESS CHIP CARRIER LCC
L7C164CC20
L7C164WC12
L7C164WC15
L7C164WC20
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s482
Abstract: s484
Text: Pdt Integrated DeviceTechnology Inc C M O S STATIC RAM 64K 1 6 K x 4-BIT) IDT 7188S IDT 7188L FEATURES: DESCRIPTION: • The ID T7188 is a 65,536-blt high-speed static RAM organized as 16K x 4. It is fabricated using IDT's high-performance, highrellability te c h n o lo g y -C E M O S . This state-of-the-arl technology,
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7188S
7188L
15/20/25/30/35/45ns
IDT7188S
IDT7188L
22-pln,
24-pin
MIL-STD-883.
S4-65
s482
s484
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Untitled
Abstract: No abstract text available
Text: National 240 * 241*244 ß Semiconductor 54F/74F240«54F/74F241«54F/74F244 Octal Buffers/Line Drivers with TRI-STATE Outputs General Description Features The 'F240, ’F241 and ’F244 are octal buffers and line driv ers designed to be employed as memory and address driv
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54F/74F240
54F/74F241
54F/74F244
74F240PC
54F240DM
74F240SC
74F240SJ
54F240FM
54F240LM
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HS9390C
Abstract: HS9390 9390 9390B
Text: SÉpeX HS9390 "“c Corporali o r p o r a tio n ^ SIGNAL PROCESSING EXCELLENCE 16-BIT ULTRA HIGH SPEED, LOW GLITCH D/A CONVERTER FEATURES • 75nsec settling time 4mA step to ±0.006% ■ Segmented switching architecture reduces glitch a re a to 140% FSR-nsec
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HS9390
16-BIT
75nsec
32-pin
9390C
HS9390C
9390
9390B
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L I n t e g r a t e d D e v ic e T e c h n o lo g y , I n c . FEATURES: DESCRIPTION: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.)
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IDT7188S
IDT7188L
20/25/35/45/55/70/85ns
15/20/25/35ns
100nW
IDT7188L
22-pin,
24-pin
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Untitled
Abstract: No abstract text available
Text: CM O S STATIC RAM 64K 1 6 K x 4-BIT I ? 8? IDT7188L FEATURES: DESCRIPTION: • The ID T7188 Is a 6 5 ,5 3 6 -b lt h ig h -s p e e d sta tic RAM orga n ized as 16K x 4. It is fa b rica te d u sin g ID T's h ig h -p erform a n ce, hlghre lla b lllty te c h n o lo g y —C EM O S . T h is state-of-the-art tech n olo gy,
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IDT7188L
T7188
IDT7188S/ID
T7188L
MIL-STD-883,
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DTM03
Abstract: No abstract text available
Text: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated Device Technology, Inc. FEATURES: of-the-art technology, combined with innovative c irc u it design techniques, provides a cost effective approach for memory • High-speed (equal access and cycle times)
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IDT7188S
IDT7188L
20/25n
22-pin,
200mV
IDT7188
MIL-STD-883
D22-1)
P22-1)
E24-1)
DTM03
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated D evice Technology, Inc. of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access tim es as fast as 20ns are available. The IDT7188
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IDT7188S
IDT7188L
20/25/35/45/55/70/85ns
20/25ns
22-pin,
MIL-STD-883,
IDT7188
536-bit
200mV
T7188
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s484
Abstract: t dc s479
Text: I I N T E G R A T E D D E VI CE 14E D 4 Ö 2 S 77 1 0 0 Q 3 3 4 3 7 CMOS STATIC RAM 64K 16K x 4-BIT IDT 7188S IDT 7188L T - H b ' 1 3 ' l O FEATURES: • • High-speed (equal access and cycle times) - Military: 2 0 /2 5/30 /3 5 /4 5 /5 5 /7 0/85 n s (max.)
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2S771
0GG3343
IDT7188S
IDT7188L
20/25/30/35/45/55/70/85ns
15/20/25/30/35/45ns
IDT7188S
350mW
100pW
s484
t dc s479
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7188s20
Abstract: 7188L 55AC10
Text: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated D evice T ech n o lo gy, Inc. of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 20ns are available. T h e ID T 7 188
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IDT7188S
IDT7188L
20/25/35/45/55/70/85ns
20/25ns
22-pin,
MIL-STD-883,
IDT7188
536-bit
200mV
7188s20
7188L
55AC10
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Untitled
Abstract: No abstract text available
Text: FU JITSU 4 -B IT D IG ITA L-TO ANALOG CONVERTER WITH LOOK-UP TABLE ¡¡¡HP M B 40874 A p r. 1989 Edition 1.0 MB40874 4-BIT DIGITAL-TO-ANALOG CONVERTER WITH LOOK-UP TABLE The Fujitsu MB40874 is 50 MSPS M ega Sam ple Per Second 4 -b it D ig ita lto -A n a lo g C o n v e rte r w ith L o o k -u p Table. The MB40874 is designed fo r
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MB40874
20-LEAD
DIP-20C-C01)
MB40874
DIP-20P-M02)
D20003S-3C
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40874
Abstract: T80FR
Text: 4 -B IT D IG ITA L-TO ANALOG CONVERTER WITH LOOK-UP TABLE FU JITSU M B 40874 A p r. 1989 Edition 1.0 MB40874 4-B IT DIGITAL-TO-ANALOG CONVERTER WITH LOOK-UP TABLE The Fujitsu MB40874 is 50 MSPS M eg a Sam ple Per Second 4 - b it D ig ita lto -A n a lo g C o n v e rte r w ith L o o k -u p Table. The MB40874 is designed fo r
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MB40874
MB40874.
B40874
20-LEAD
DIP-20C-C01)
MB40874
DIP-20P-M02)
40874
T80FR
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Untitled
Abstract: No abstract text available
Text: 16K x 4 Static RAM L 7 C 1 6 4 /1 6 5 / 1 6 6 Features Description_ □ 16K by 4 Static RAM with common I/O Q Auto-Powerdown design □ Advanced CMOS technology □ High speed — to 20 ns worst-case □ Low Power Operation Active: 285 mW typical at 45 ns
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L7C164,
L7C165,
L7C166
L7C164
L7C165
L7C166
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L7C164PC85
Abstract: L7C164PC25 8A720 ma 8630 L7C164PC35 L7C164PC45
Text: L7C164/165/166 16K x 4 Static RAM Features Description □ 16K by 4 Static RAM with common I/O □ Auto-Powerdown design □ Advanced CMOS technology □ High speed — to 20 ns worst-case □ Low Power Operation Active: 285 mW typical at 45 ns Standby: 50 xW typical
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L7C164/165/166
CY7C164/166
22/24-pin
24-pin
L7C164,
L7C165,
L7C166
L7C164PC85
L7C164PC25
8A720
ma 8630
L7C164PC35
L7C164PC45
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Untitled
Abstract: No abstract text available
Text: L7C1R4/1RR *- — • — - - L 7 C 134 MGG 16K x 4 Static RAM JbVUI-S ■ :XJHHO -■A Ih □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation
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MIL-STD-883,
CY7C164/166
24-pin
22/24-pin
22/28-pin
L7C164
L7C166
MJL-STD-883
L7C166CMB25
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s2ld
Abstract: MA 166s
Text: . i O <I!!H € •Hi L 7 C 16K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 8 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns
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MIL-STD-883,
L7C164
L7C166
CY7C164/166
22/24-pin
24-pin
22-pin
28-pin
L7C164/165/166
s2ld
MA 166s
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Untitled
Abstract: No abstract text available
Text: L 7 C 164/166 16K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns
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L7C164
L7C166
MIL-STD-883,
CY7C164/166
22/24-pin
24-pin
22/28-pin
L7C164
L7C166
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Untitled
Abstract: No abstract text available
Text: L 7 C 1 6 4 /1 6 6 16K x 4 Static RAM FEATURES □ 16K x 4 Static RAM with Common I/O □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 12 ns maximum Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 [iW typical
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L7C164
L7C166
L7C166CMB25
L7C166CMB20
L7C166CMB15
03/07/95-L
L7C164/166
L7C166
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