IRFS645
Abstract: IRFS644
Text: SAMSUNG ELECTRONICS INC b?E D IRFS644/645 • 71b41M2 001735^ Ô2Ô « S M Ò K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance
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IRFS644/645
to-220F
IRFS644/645
IRFS644
IRFS645
GG173h3
VIRFS644
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Untitled
Abstract: No abstract text available
Text: SSP1N60A Advanced Power MOSFET FEATURES B ^D SS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V — 600 V
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SSP1N60A
003b32fl
O-220
00M1N
7Tb4142
DD3b33D
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Untitled
Abstract: No abstract text available
Text: KS57C0002 4-BIT CMOS Microcontroller ELECTRONICS Product Specification 2 OVERVIEW The KS57C0002 single-chip CMOS microcontroller is designed for high-performance using Samsung's newest 4-bit CPU core. With a four-channel comparator, eight LED direct drive pins, serial I/O interface, and a versatile
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KS57C0002
KS57C0002
30-pin
Me57C0002
fx/64,
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wram samsung
Abstract: 2W-25 OQ29
Text: KM4232W259A Graphic Memo ry ELECTRONICS FEATURES DESCRIPTION • 1 M Byte Frame-Buffer on a single chip • 2.1 G Byte/Second Internal Bus: - Fast Window Drawing Operations - Fill at up to 2.1 G Byte/Second -Aligned BitBLT at up to 0.64 G Byte/Second • 8-Column Block W rite with Bit and Byte Masking
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KM423
2W259A
-15ns
-83MHz
120-Pin
KM4232W259A
KM4232W259A
0Q312CH
wram samsung
2W-25
OQ29
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KM6164000B
Abstract: KM6164000BLI-L KM6164000BL-L KM6164000BLT-5L KM6164000BLT-7L
Text: KM6164000B Family CMOS SRAM 256Kx16 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION Process Technology : 0.4* • CMOS Organization : 256Kx16 Power Supply Voltage : Single 5V •• 10% Low Data Retention Voltage : 2V Min Three state output and TTL Compatible
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KM6164000B
256Kx16
256Kx16
44-TSOP
KM616V4000B
KM6164000BLI-L
KM6164000BL-L
KM6164000BLT-5L
KM6164000BLT-7L
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C1204B
Abstract: tsop 3021 DIN 3021 STANDARD AA3021
Text: KM416C1004BT ELECTRONICS CMOS D R A M 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416C1004BT
16Bit
1Mx16
71bm42
302tib
C1204B
tsop 3021
DIN 3021 STANDARD
AA3021
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Untitled
Abstract: No abstract text available
Text: KM718B86 64Kx18 Synchronous SRAM 64K X 18-Bit Synchronous Burst SR A M FEATURES GENERAL DESCRIPTION • Synchronous Operation. • On-Chip Address Counter. • Solf-Timed Write Cycle. The KM718B86 is a 1,179,648 bit Synchronous Static Random Access Memory designed to support 66MHz of
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KM718B86
64Kx18
18-Bit
52-Pin
KM718B86
66MHz
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Untitled
Abstract: No abstract text available
Text: KS0122 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required
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KS0122
KS0122
0D3153b
71b4142
100-QFP-1420C
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