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    720 TRANSISTOR SMD SOT Search Results

    720 TRANSISTOR SMD SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    2SC2712 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC3325 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.5 A / hFE=70~240 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC2713 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=0.1 A / hFE=200~700 / VCE(sat)=0.3 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC4116 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-323 Visit Toshiba Electronic Devices & Storage Corporation

    720 TRANSISTOR SMD SOT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    720 TRANSISTOR smd sot-223

    Abstract: KSP92 KSP92 equivalent 720 TRANSISTOR smd sot 40X40 transistor 720 smd
    Text: Transistors IC SMD Type P-channel enhancement mode vertical D-MOS transistor KSP92 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low threshold voltage VGS th Direct interface to C-MOS, TTL,etc. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2


    Original     		KSP92 OT-223 720 TRANSISTOR smd sot-223 KSP92 KSP92 equivalent 720 TRANSISTOR smd sot 40X40 transistor 720 smd PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification BCW89 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 60 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		BCW89 OT-23 PDF

    H1 IC

    Abstract: h2 marking smd BCW70 smd TRANSISTOR marking ku smd marking H2 BCW69
    Text: Transistors IC SMD Type PNP General Purpose Transistors BCW69,BCW70 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low voltage max. 45 V . 0.55 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		BCW69 BCW70 OT-23 BCW69 H1 IC h2 marking smd BCW70 smd TRANSISTOR marking ku smd marking H2 PDF

    BCF30 c8p

    Abstract: BCF29 BCF30 smd marking c8p
    Text: Transistors IC SMD Type PNP General Purpose Transistors BCF29,BCF30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low voltage max. 32 V . 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		BCF29 BCF30 OT-23 dis60 BCF29 BCF30 c8p BCF30 smd marking c8p PDF

    transistor 720 smd

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification BCW29,BCW30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 32 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		BCW29 BCW30 OT-23 BCW29 transistor 720 smd PDF

    transistor 720 smd

    Abstract: FMMT720 TRANSISTOR SMD 1a 9 marking 720 transistor 720 TRANSISTOR smd sot
    Text: Transistors IC SMD Type Switching Transistor FMMT720 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 IC CONT 2.5A. 1 0.55 625mW power dissipation. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 IC up to 10A peak pulse current. +0.05 0.1-0.01


    Original     		FMMT720 OT-23 625mW -50mA -100mA -75mA -10mA, -50mA 100MHz -20mA transistor 720 smd FMMT720 TRANSISTOR SMD 1a 9 marking 720 transistor 720 TRANSISTOR smd sot PDF

    ic 810

    Abstract: IC 810 datasheet MARKING SMD PNP TRANSISTOR BCW89
    Text: Transistors IC SMD Type PNP General Purpose Transistors BCW89 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 60 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		BCW89 OT-23 ic 810 IC 810 datasheet MARKING SMD PNP TRANSISTOR BCW89 PDF

    smd TRANSISTOR BCW29

    Abstract: MARKING SMD PNP TRANSISTOR BCW29 BCW30 smd transistor marking C2 720 TRANSISTOR smd sot
    Text: Transistors IC SMD Type PNP General Purpose Transistors BCW29,BCW30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 32 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		BCW29 BCW30 OT-23 BCW29 smd TRANSISTOR BCW29 MARKING SMD PNP TRANSISTOR BCW30 smd transistor marking C2 720 TRANSISTOR smd sot PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification BCF29,BCF30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low voltage max. 32 V . 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


    Original     		BCF29 BCF30 OT-23 BCF29 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification BCW69,BCW70 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low voltage max. 45 V . 0.55 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		BCW69 BCW70 OT-23 dissipati-150 BCW69 PDF

    K 3264 fet transistor

    Abstract: K 3264 fet K 3264 transistor BUK7508-55A BUK7608-55A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which


    Original     		O220AB OT404 BUK7508-55A BUK7608-55A O220AB K 3264 fet transistor K 3264 fet K 3264 transistor BUK7508-55A BUK7608-55A PDF

    SPN02N60S5

    Abstract: 02N60S5 VPS05163 02N60
    Text: SPN02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 SPN02N60S5 02N60S5 VPS05163 02N60 PDF

    03n60s5

    Abstract: SPN03N60S5 Q67040-S4203 VPS05163
    Text: SPN03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN03N60S5 OT-223 Q67040-S4203 VPS05163 03N60S5 03n60s5 SPN03N60S5 Q67040-S4203 VPS05163 PDF

    02n60s5

    Abstract: SPN02N60S5 VPS05163 02N6
    Text: SPN02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3


    Original     		SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 02n60s5 SPN02N60S5 VPS05163 02N6 PDF

    SPN03N60S5

    Abstract: 03N60S5 VPS05163 SMD TRANSISTOR MARKING 2A SOT223 Q67040-S4203
    Text: SPN03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN03N60S5 OT-223 Q67040-S4203 VPS05163 03N60S5 SPN03N60S5 03N60S5 VPS05163 SMD TRANSISTOR MARKING 2A SOT223 Q67040-S4203 PDF

    Q67040-S4203

    Abstract: SPN03N60S5 03N60S5 VPS05163 SMD TRANSISTOR MARKING 2A SOT223
    Text: SPN03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN03N60S5 OT-223 Q67040-S4203 VPS05163 03N60S5 Q67040-S4203 SPN03N60S5 03N60S5 VPS05163 SMD TRANSISTOR MARKING 2A SOT223 PDF

    01N60C3

    Abstract: SPN01N60C3 VPS05163 smd diode MARKING 03A
    Text: SPN01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 01N60C3 SPN01N60C3 VPS05163 smd diode MARKING 03A PDF

    transistor smd 6.z

    Abstract: SPN03N60S5
    Text: SPN03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN03N60S5 OT-223 VPS05163 Q67040-S4203 03N60S5 transistor smd 6.z SPN03N60S5 PDF

    02N60S5

    Abstract: SPN02N60S5 VPS05163
    Text: SPN02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3


    Original     		SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 02N60S5 SPN02N60S5 VPS05163 PDF

    TRANSISTOR SMD MARKING CODE 2A

    Abstract: 01N60C3 01n60 SPN01N60C3 VPS05163 smd diode MARKING 03A
    Text: SPN01N60C3 Rev. 2.1 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 TRANSISTOR SMD MARKING CODE 2A 01N60C3 01n60 SPN01N60C3 VPS05163 smd diode MARKING 03A PDF

    SPN02N60S5

    Abstract: No abstract text available
    Text: SPN02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN02N60S5 OT-223 VPS05163 Q67040-S4207 02N60S5 SPN02N60S5 PDF

    SPN01N60S5

    Abstract: 01N60S5 VPS05163 smd diode MARKING 03A
    Text: SPN01N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A • Extreme dv/dt rated SOT-223 • Ultra low effective capacitances 4 • Improved noise immunity


    Original     		SPN01N60S5 OT-223 Q67040-S4208 VPS05163 01N60S5 SPN01N60S5 01N60S5 VPS05163 smd diode MARKING 03A PDF

    Untitled

    Abstract: No abstract text available
    Text: SPN01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN01N60C3 VPS05163 OT-223 SPN01N60C3 Q67040-S4208 01N60C3 PDF

    01N60

    Abstract: No abstract text available
    Text: SPN01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN01N60C3 OT-223 VPS05163 Q67040-S4208 01N60C3 01N60 PDF