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ZVNL120 Abstract: No abstract text available Text: PLESSEY s e u i c o n d /d i s c r e t e ]>F\|7220S33 DODSSTl S \| ~ 7220533 PLESSEY SEMICOND/DISCRETE 95D 05591 T - '3 5 '- '2 N-channel enhancement mode vertical DMOS FET S' ZVNL120 FEATURES • Compact geometry • Fast sw itching speeds • No secondary breakdown	OCR Scan	7220S33 ZVNL120 9/ZVNL120A/08/86 125mA 10/ZVNL120A/08/86 755D533 G-100 ZVNL120	PDF
scr 219 Abstract: ZVN3210L PLESSEY SP Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY ~T5 dF \| 7 S S 0 5 3 3 SEMICOND/ D ISCRETE N-channel enhancement mode vertical DMOS FET 95D 0DDS711 0 \| ~ 0 5 7 1 1 ZVN3210 FEATURES • C o m p a c t ge om etry • F a s t s w itc h in g sp e ed s • N o se c o n d a ry b re a k d o w n	OCR Scan	0DDS711 ZVN3210 ZVN3210L* 0S715 QDDS71b T-39-11 G-218 72E0533 scr 219 ZVN3210L PLESSEY SP	PDF
G-329 Abstract: ZVP3306 ZVP3306A Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE ZVP2220 DE I 75EDS33 ODOSflEE 1 9SD 05822 T '3 7 \ 2 5 G-324 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE G-325 d F \| 7S2[]S33 QOaSflES □ \|~~ 95D 05 823 D PLESSEY SEMICOND/DISCRETE	OCR Scan	75EDS33 ZVP2220 G-324 G-325 7EE0533 G-326 7220S33 -r-31-25' ZVP3306 G-329 ZVP3306 ZVP3306A	PDF
ZVN2106AM Abstract: ZVP2106AM1 ZTX753M1 ZTX751M1 ZVP0535AM1 ZTX449 42-06A ZTX653M Text: 03 PLESSEY SENI C O N D / D I SC R E T E D E I 7 2 5 0 5 3 3 0 0 0 b 7 fl0 S I ~ E-LIN E''M l' 1 The package that offers you more POWER and PERFORMANCE to meet your Surface Mount Requirements. The range of E-Line M1 products has been specially selected to meet current and future design requirements	OCR Scan	VNL120AM 7220S33 ZVN2106AM ZVP2106AM1 ZTX753M1 ZTX751M1 ZVP0535AM1 ZTX449 42-06A ZTX653M	PDF
BS250P Abstract: G37 mosfet Text: PLESSEY SEP1IC0ND/DISCRETE ~T5 DE 17ESDS33 □ □□.55 3 3 S \| ~ 7220533 P L ES SE Y S E M I C O N D / D ISCRETE 95D 05533 D T '3 5 'Z S ' P-channel enhancement mode vertical DMOS FET BS250P FEATURES • Com pact geometry • Fast sw itching speeds • No secondary breakdown	OCR Scan	17ESDS33 BS250P 0QDSS37 5/ZVP1206/G6/66 0DUS540 BS250P G37 mosfet	PDF
n2106 Abstract: vn2106 ZVN2106 Ferranti zvn Text: PLESSEY SEMICOND/DISCRETE DE~\|? 5 5 DS 33 GOOSbMS a f ” 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /D I S C R E T E 95D 05645 T" 3 1 - 0 ? N-channel enhancement mode vertical DMOS FET ZVN 2106 FEATURES • Compact geometry • Fast switching speeds •	OCR Scan	G-151 G-153 G-154 n2106 vn2106 ZVN2106 Ferranti zvn	PDF
plessey ttl Abstract: geometry FERRANTI ELECTRONICS I/SMD transistor g29 Text: PLESSEY SEMICOND/DISCRETE TS 7220533 PLESSEY SEMICOND/DISCRETE D eT\| 72 E0 S3 3 D00S002 4 ^ 95D 05002 T -V f- o l ELECTRICAL CHARACTERISTICS (c PHOTO TRANSISTOR ELECTRICAL CHARACTERISTICS Dice Type ZM100 ZM110 ZM210 V CE0 Min. V 35 35 35 V cbo Min. V 35 35	OCR Scan	D00S002 ZM100 ZM110 ZM210 ODGSD11 plessey ttl geometry FERRANTI ELECTRONICS I/SMD transistor g29	PDF
plessey Abstract: zvn1409 G146 Text: PLESSEY SEMICOND/DISCRETE ~^5 DE~\| 7520S33 QDG5L37 3 \|~~ 7220533 PLESSEY SEMICOND/DISCRETE 95D 05637 T - ^ r - N-channel enhancement mode vertical DMOS FET D ; z r ZVN1409 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown •	OCR Scan	7520S33 QDG5L37 ZVN1409 G-142 7EB0S33 0DDSL41 G-143 7SSDS33 00DSb45 plessey zvn1409 G146	PDF
Untitled Abstract: No abstract text available Text: 7 PLESSEY SEMICOND/DISCRETE dF\| 7 5 2 0 S 3 B D D G b b a O 5 \| ~ ^ ~ Q 3 BC856 BC858 BC860 PNP silicon planar general purpose transistors BC857 BC859 A B S O L U T E M A X I M U M R A TIN G S Parameter Sym bol Collector-base voltage V cbo BC856 -8 0 BC857	OCR Scan	BC856 BC858 BC860 BC857 BC859	PDF
N-0120 Abstract: N0120 Text: PLESSEY SENICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE DE 1 7 5 2 D 5 3 3 D D D S t m 95D 0 5 6 0 9 T - 3 ^ .^ 5 - N-channel enhancement mode vertical D M O S FET ZVN 0120 FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown	OCR Scan	G-115 722DS33 00G5bl4 G-116 75EG533 G-117 7220S33 G-118 N-0120 N0120	PDF
X70H Abstract: No abstract text available Text: PLESSEY SEMICOND/DÏSCRETE 03 DE \| 752DS33 DDGbfc.43 3 NPN silicon planar small signal transistor BCX70 é. T- A B S O L U T E M A X IM U M R A T IN G S S ym bol P aram eter C o llecto r-E m itter V o ltag e C o llecto r-E m itter V o ltag e E m itter-B ase V o lta g e	OCR Scan	752DS33 BCX70 X70H	PDF
16V8Q Abstract: No abstract text available Text: PLESSEY SEMICOND/DISCRETE 7 220zjj KLESSEY SE MI CO ND/DISCRETE □3 DiF 7 5 S D S 3 3 03E 06 7 2 0 D T - IVI-channel enhancement mode vertical D M O S FET BS170F L S ' * A B S O L U T E M A X I M U M R A T IN G S Parameter Sym b o l Drain-source voltage	OCR Scan	220zjj BS170F 7220S33 72aOS33 000tj 16V8Q	PDF
BSS70R Abstract: BSS69 bss69r Text: 7:p l e s s e y 03 s e m i c o n d /d i s c r e t e PIMP silicon planar medium power switching transistors A B SO LU T E M AXIM UM RATIN G S Parameter BSS69 BSS70 Symbol Collector-Base Voltage BSS69 & BSS70 VCBO VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	7220S33 BSS69 BSS70 BSS69 BSS70 000tt -----------------------------------BSS69 BSS70R bss69r	PDF