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    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEMICOND/DISCRETE □3 7 N-channel enhancement mode vertical DMOS FET dF | 722G533 □00b73fl 3 • ?- a s - ZVN3310F A B SO LU T E M AXIM UM R ATIN G S Parameter SO T-23 Symbol Unit V DS 100 V 'd 0.1 A 2 A ±20 V Drain-source voltage Continuous drain current at T A = 2 5 °C


    OCR Scan     		PDF 722G533 00b73fl ZVN3310F 7520S33 DDb74a

    zvn2110

    Abstract: G156 ZVN2110L G158
    Text: PLESSEY SEMCOND/MSCRETE 7220533 PLESSEY ìT^ C ON D / DI S C R E T E S E M I C eI 7250533 0DQSt,S3 1 F 9 5D 05653 -o7 N-channel enhancement mode vertical DMOS FET ZVN2110 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown •


    OCR Scan     		PDF ZVN2110 ZVN2110A* ZVN2110B* ZVN2110 G-158 725GS33 G-159 722Q533 G156 ZVN2110L G158

    g191

    Abstract: No abstract text available
    Text: PLESSEY SEflICOND/DISCRETE 7220533 PLESSEY SEM ICO ND/DI SCRETE M T | ? 2 a D 5 3 3 DQGSbflS 3 T " 95D 05 6 8 5 D T N-channel enhancement mode vertical DMOS FET - 3 ° l'O J ZVN2220 FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown


    OCR Scan     		PDF ZVN2220 ZVN2220B ZVN2220L G-190 G-191 722G533 G-192 g191