LTV-724FS-TA1
Abstract: E113898 LTV-724F LTV-724FM LTV-724FS LTV-724FS-TA LTV724F-V 724F
Text: High Input Current Type Photocoupler LTV-724F Series Package Dimensions High isolation voltage between input and output High input current IF : MAX. 150 mA Low collector dark current ( ICEO : MAX. 10-7A at VCE = 20V ) Current transfer ratio ( CTR : 20% ~ 80% at IF = 100mA, VCE = 2V )
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LTV-724F
100mA,
000Vrms
E113898
CA91533-1
P98101738
100mA
DC500V
LTV-724FS-TA1
E113898
LTV-724FM
LTV-724FS
LTV-724FS-TA
LTV724F-V
724F
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TA521
Abstract: TA523 TK501 ABB TK501 LIYCY 783F TA525 sub-d 25 LIYCY connector 1,0 mm subd
Text: System Freelance 800F AC 700F: CPU Accessories Data Sheet Contents AC 700F: CPU Accessories 1. Lithium Battery TA521 2. Dummy Coupler Module TA 724F 3. Programming Cable TK501 AC 700F: I/O Modules Accessories 1. Pluggable Marking Holder TA523 AC 700F: Common Accessories
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TA521
TK501
TA523
TA525
TA526
3BDD015177
TA521
TA523
TK501
ABB TK501
LIYCY
783F
TA525
sub-d 25
LIYCY connector 1,0 mm
subd
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA721F~724F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES 1 6 2 5 A Simplify Circuit Design. A1 C With Built-in Bias Resistors. D C Reduce a Quantity of Parts and Manufacturing Process.
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KRA721F
KRA724F
KRA723F
KRA722F
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csr bc4
Abstract: TC5116400BSJ BST60
Text: TOSHIBA m C|C]t:,724fl QD2fl2Ci;L 510 • -TC5116400BSJ/BSTW70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. TheTC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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724fl
TC5116400BSJ/BSTW70
TC5116400BSJ/BST
300mil)
csr bc4
TC5116400BSJ
BST60
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Untitled
Abstract: No abstract text available
Text: q0^724fl 0020422 RTS TOSHIBA TC51V16325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V16325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V16325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as weil as advanced circuit techniques to pro
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724fl
TC51V16325BJ/BFT-70
TC51V16325BJ/BFT
16325B
400mil)
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TC528257
Abstract: n724
Text: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS multiport m em ory equipped with a 262,144-w ords by 8 -bits dynam ic random access m em ory RAM port and a 512-words by 8 -bits static serial access m emory (SA M ) port. The
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TC528257
144WORDS
TC528257
144-w
512-words
TC528257J/SZ/nVTR1017240
TC528257J/SZ/FT/TR-70
TC528257J/SZ/FT/TR-80
n724
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D1274
Abstract: 85to 2SD 1020 equivalent M68HC11 MC68HC MC68HC811E2 MC68HC811E2C MC68HC811E2M MC68HC811E2V MC68L11E9
Text: APPENDIX A ELECTRICAL CHARACTERISTICS Table A -1 . Maximum Ratings R atin g Sym bol V a lu e Unit V dd - 0.3 to + 7.0 V v in - 0.3 to + 7.0 V ta TL to T H 0 to + 70 - 40 to + 85 - 4 0 to + 105 - 4 0 to + 125 0 to + 70 - 40 to + 85 - 4 0 to + 105 - 40 to + 125
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MC68HC
11ExC
MC68HC811E2
MC68HC811E2C
MC68HC811E2V
MC68HC811E2M
MC68L11E9
D1274
85to
2SD 1020 equivalent
M68HC11
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74AC161 P/F/FN/FS, TC74AC163P/F/FN/FS SILICON MONOLITHIC DATA SYNCHRONOUS PRESETTABLE 4 -B IT BINARY COUNTER TC74AC161P/F/FN/FS TC74AC163P/F/FN/FS ASYNCHRONOUS CLEAR SYNCHRONOUS CLEAR
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TC74AC161
TC74AC163P/F/FN/FS
TC74AC161P/F/FN/FS
16PIN
150mil
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Untitled
Abstract: No abstract text available
Text: m 'i[m24û D02ô4Db 752 m- TOSHIBA TC5118180BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description TheTC 5118180BJ/B FT is the fast page dynamic RAM organized as 1,048,576 w ords by 18 bits. TheTC 5118180BJ/B FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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m--------------24Ã
TC5118180BJ/BFT-60/70
5118180BJ/B
5118180BJ/BFT
QDBBH12
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Untitled
Abstract: No abstract text available
Text: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT INTEGRATED TOSHIBA CIRCUIT TECHNICAL TC74LVQ273F, TC74LVQ273FW TC74LVQ273FS DATA SILICON MONOLITHIC OCTAL D-TYPE FLIP FLOP W ITH CLEAR The TC74LVQ273 is a high speed CMOS OCTAL D-FLIP FLOP fabricated w ith silicon gate and double-layer metal
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TC74LVQ273F,
TC74LVQ273FW
TC74LVQ273FS
TC74LVQ273
LVQ273FW
SOL20-P-300-1
TC74LVQ273F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA cIOti7 2 4 a 0 0 2 ô b fl2 131 TC59R1809VK/HK PRELIMINARY 2,097,152 WORD x 9-BIT RAMBUS DYNAMIC RAM Description TheTC59R1809VK/HK Rambus Dynamic RAM RDRAM is a next-generation high-speed CMOS DRAM with a 2,097,152 x 9-bit organization and built-in slave logic. The 36,864 sense amps of the DRAM core are used as cache to achieve data
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TC59R1809VK/HK
TheTC59R1809VK/HK
500MB/S.
TC59R1809VK/HK
32-pin
RD18011195
SVP32-P-1125A)
SHP36-P-1125)
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M68HC05
Abstract: No abstract text available
Text: SECTION 3 MC68HC705C8 FUNCTIONAL DATA The MC68HC705C8 m icrocontroller MCU is a member of the M68HC05 Fam ily of low-cost, single-chip microcontrollers. The HCMOS technology used on the MC68HC705C8 combines smaller size and higher speeds w ith the low power and high noise im m unity of CMOS.
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MC68HC705C8
M68HC05
b3b724fl
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MC68HC705CS
Abstract: bpl crt monitor circuit diagram BTB 600 BR MC68HC05 Applications Guide microcontroller Motorola 20 pin SPT0001 00FF M146805 M68HC05 MC68HC705C8
Text: SECTION 3 MC68HC705C8 FUNCTIONAL DATA The MC68HC705C8 m icrocontroller MCU is a member of the M68HC05 Fam ily of low-cost, single-chip microcontrollers. The HCMOS technology used on the MC68HC705C8 combines sm aller size and higher speeds with the low power and high noise im munity of CMOS.
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MC68HC705C8
M68HC05
MC68HC705CS
bpl crt monitor circuit diagram
BTB 600 BR
MC68HC05 Applications Guide
microcontroller Motorola 20 pin
SPT0001
00FF
M146805
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC51V4400ASJL/AFTL80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC51V 4400ASJL/AFTL is the new generation dynam ic RAM organized 1,048,576 w ord by 4 bit. The TC51V 4400A SJL/AFTL utilizes T oshiba's CM OS silicon gate process technology as w ell as advanced
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TC51V4400ASJL/AFTL80
TC51V
4400ASJL/AFTL
TC51V4400ASJL/AFTL
TC51V4400/
512KX4
QQE542fl
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TCFT 1103
Abstract: TC5116400J A173 TC511640J A10RC TCWU
Text: TOSHIBA TC5116400J/FT -60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5116400J/FT is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400J/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC5116400J/FT-60/70
TC5116400J/FT
TC5116400J/FT.
1M516DRAM.
TCFT 1103
TC5116400J
A173
TC511640J
A10RC
TCWU
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mpc860 users manual
Abstract: TEA 2029 A jh110 tj3b 3b tea 2030 MPC860 PA15 mpc860 application notes BRG01 SERVICE MANUAL 2040
Text: SECTION 20 ELECTRICAL CHARACTERISTICS This section contains detailed information on power considerations, DC/AC electrical characteristics, and AC timing specifications for the MPC860. NOTE The M PC860 electrical specifications are preliminary and many specs are from design simulations. These specifications may
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MPC860.
MPC860
01453b6
mpc860 users manual
TEA 2029 A
jh110
tj3b 3b
tea 2030
PA15
mpc860 application notes
BRG01
SERVICE MANUAL 2040
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MCF5202
Abstract: No abstract text available
Text: SECTION 9 ELECTRICAL CHARACTERISTICS 9.1 MAXIMUM RATINGS Table 9-1. Maximum Ratings RATING SYMBOL VALUE UNIT Supply voltage Vcc •0.3 to +7.0 V Input voltage Vi„ -0.5 to Vcc + 0.5V V Storage temperature range Tstg -55 to 150 °c The ratings in Table 9-1 define maximum conditions under which the device will
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MCF5202
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XC141540P4
Abstract: No abstract text available
Text: M U I fJK U i-A SEMICONDUCTOR TECHNICAL DATA Product Preview Rev. 1.0 MONITOR ON SCREEN DISPLAY This is a high performance HCMOS device designed to interface with a micro controller unit to allow colored symbols or characters to foe displayed onto monitor screen. Its on-chip PLL allows both multisyi*
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XC141540P4
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BTS G29
Abstract: BG46 PCU d12 BH49 smd n54 BE28 be54 BE26 smd code 1Bs AA29
Text: 44E B I b3b?2Ma GGTflflti? a H NOTI Order this data sheet MOTOROLA SEMICONDUCTOR TECHNICAL DATA by 296002/D MOTOROLA SC UC/UP Product Preview Dual 96-Bit General Purpose IEEE Floating-Point 4-Port DSP Multi-Chip Module Military 296002 The 296002, the first member of Motorola’s new family of Military Multi-Chip Modules,
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296002/D
96-Bit
DSP96002,
DSP96002
BTS G29
BG46
PCU d12
BH49
smd n54
BE28
be54
BE26
smd code 1Bs
AA29
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Untitled
Abstract: No abstract text available
Text: SECTION 10 ELECTRICAL AND THERMAL CHARACTERISTICS This section provides information on the maximum rating and thermal characteristics for the M C 68000, M C 68H C 000, M C 6 8 H C 0 0 1 , M C 68E C 000, M C 68008, and M C 68010. 10.1 MAXIMUM RATINGS Rating
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M68000
8-/16-/32-BIT
b3b724fl
A19-A0
MC68EC000
01544flD
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MC68HC705J1A
Abstract: No abstract text available
Text: MC68HC705J1 A/D Rev. 2.0 MC68HC705J1A MC68HRC705J1A MC68HSC705J1A MC68HSR705J1A HCMOS Microcontroller Units TECHNICAL DATA Ä b3b?E4ö 0 1S ÔDL7 3^5 • M O TO R O LA ( S ) IN T E N T IO N A L L Y b3b?24fl DISfiObfi 221 B L A N K List of Sections List of Sections. 3
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MC68HC705J1
MC68HC705J1A
MC68HRC705J1A
MC68HSC705J1A
MC68HSR705J1A
b3b754Ã
MC68HC705J1A
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B331 transistor
Abstract: transistor b331 Transistor B28D A 42 B331 transistor A 92 B331 transistor A 42 B331 transistor B324 KT 117A 851B52 intel 8049 microcomputer
Text: 1 AP-91 USING THE 8049 AS AN 80 COLUMN PRINTER CONTROLLER I. INTRODUCTION This A pplication N ote d eta ils u sin g I N T E L ’S 8049 m icrocom puter a s a d ot m atrix p rin ter controller. P re v io u s I N T E L A pplication n o tes, e.g. AP-27 and AP-54 d escrib e d usin g in telligen t p ro c e sso rs and p eri
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AP-91
AP-27
AP-54)
B331 transistor
transistor b331
Transistor B28D
A 42 B331 transistor
A 92 B331 transistor
A 42 B331
transistor B324
KT 117A
851B52
intel 8049 microcomputer
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2N50F
Abstract: D1724S
Text: SEDI 722/24 CMOS LCD DRIVER • CMOS 80-Bit Segment Driver • DESCRIPTION The SED1722/24 is an 80 dot m atrix LCD segm ent column driver for driving high-capacity LCD panels at duty cycles higher than 1/100 (up to 1/500). The LSI features a wide range of LCD drive voltages.
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80-Bit
SED1722/24
SED1733F
100-bit
SED1722)
SED1724)
2N50F
D1724S
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dsp56001
Abstract: 49/DSP56001A
Text: SECTION 2 SPECIFICATIONS GENERAL CHARACTERISTICS The DSP56001A is fabricated in high-density HCMOS with TTL compatible inputs and outputs. Table 2-1 Absolute Maximum Ratings GND = 0 V Symbol Value Unit Supply Voltage Vc c -0.3 to +7.0 V All Input Voltages
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DSP56001A
AA0397
b3b724fl
01Sbfl
dsp56001
49/DSP56001A
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