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    72M TRANSISTOR Search Results

    72M TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    72M TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    72m transistor

    Abstract: SCT-595 marking E1 SCT-595 marking PAs SCT-595 kw33 transistor marking 72m
    Text: BCP 72M PNP Silicon AF Power Transistor 4  Drain switch for RF power amplifier stages  For AF driver and output stages 5  High collector current  Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP 72M PAs Pin Configuration Package


    Original     		VPW05980 SCT-595 Oct-20-1999 72m transistor SCT-595 marking E1 SCT-595 marking PAs SCT-595 kw33 transistor marking 72m PDF

    CES2302

    Abstract: No abstract text available
    Text: CES2302 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.0A, RDS ON = 72mΩ @VGS = 4.5V. RDS(ON) = 110mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package.


    Original     		CES2302 OT-23 OT-23 CES2302 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCP 72M PNP Silicon AF Power Transistor Preliminary data • Drain switch for RF power amplifier stages • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage o II LD Q62702-C2517 II PAs Package


    OCR Scan     		Q62702-C2517 SCT-595 PDF

    transistor marking 72m

    Abstract: 72m transistor marking PAs
    Text: SIEMENS BCP 72M PNP Silicon AF Power Transistor Preliminary data • Drain switch for RF power amplifier stages • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage O II LO T" Package OQ II Q62702-C2517


    OCR Scan     		Q62702-C2517 SCT-595 transistor marking 72m 72m transistor marking PAs PDF

    MARKING 54M SOT-23

    Abstract: DMN3150L DMN3150L-7 J-STD-020D
    Text: DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON < 54mΩ @ VGS = 10V RDS(ON) < 72mΩ @ VGS = 4.5V


    Original     		DMN3150L AEC-Q101 OT-23 J-STD-020D DS31126 MARKING 54M SOT-23 DMN3150L DMN3150L-7 J-STD-020D PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON < 54mΩ @ VGS = 10V RDS(ON) < 72mΩ @ VGS = 4.5V RDS(ON) < 115mΩ @ VGS = 2.5V


    Original     		DMN3150L AEC-Q101 OT-23 J-STD-020 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON < 54m @ VGS = 10V RDS(ON) < 72m @ VGS = 4.5V RDS(ON) < 115m @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance


    Original     		DMN3150L AEC-Q101 OT-23 J-STD-020 MIL-STD-202, DS31126 PDF

    DMN3150L

    Abstract: DMN3150L-7
    Text: DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON < 54mΩ @ VGS = 10V RDS(ON) < 72mΩ @ VGS = 4.5V


    Original     		DMN3150L AEC-Q101 OT-23 J-STD-020 DS31126 DMN3150L DMN3150L-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data •          Low On-Resistance: • RDS ON < 54mΩ @ VGS = 10V • RDS(ON) < 72mΩ @ VGS = 4.5V  RDS(ON) < 115mΩ @ VGS = 2.5V Low Gate Threshold Voltage


    Original     		DMN3150L AEC-Q101 OT-23 J-STD-020 DS31126 PDF

    72m transistor

    Abstract: transistor marking 72m C2517 Q62702-C2517 SCT-595 marking PAs SCT-595
    Text: BCP 72M PNP Silicon AF Power Transistor Preliminary data 4 • Drain switch for RF power amplifier stages • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration


    Original     		VPW05980 Q62702-C2517 SCT-595 Jun-05-1998 72m transistor transistor marking 72m C2517 Q62702-C2517 SCT-595 marking PAs SCT-595 PDF

    CEM4600

    Abstract: TF36
    Text: CEM4600 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 30V, 7.3A, RDS(ON) = 18mΩ (typ) @VGS = 10V. RDS(ON) = 26mΩ (typ) @VGS = 4.5V. -30V, -4.6A, RDS(ON) = 45mΩ (typ) @VGS = -10V. RDS(ON) = 72mΩ (typ) @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).


    Original     		CEM4600 CEM4600 TF36 PDF

    Untitled

    Abstract: No abstract text available
    Text: CED4279/CEU4279 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES D1/D2 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON).


    Original     		CED4279/CEU4279 O-252-4L O-252-4L PDF

    Boundary Scan JTAG Logic

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44644184A-A, 44644364A-A 72M-BIT DDR II SRAM 4-WORD BURST OPERATION Description The μPD44644184A-A is a 4,194,304-word by 18-bit and the μPD44644364A-A is a 2,097,152-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


    Original     		PD44644184A-A, 4644364A-A 72M-BIT PD44644184A-A 304-word 18-bit PD44644364A-A 152-word 36-bit Boundary Scan JTAG Logic PDF

    pd446

    Abstract: PD4464
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44644095A-A, 44644185A-A 72M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44644095A-A is a 8,388,608-word by 9-bit and the μPD44644185A-A is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


    Original     		PD44644095A-A, 4644185A-A 72M-BIT PD44644095A-A 608-word PD44644185A-A 304-word 18-bit pd446 PD4464 PDF

    HN58V1001TI-25E

    Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI
    Text: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,


    Original     		REJ01C0001-1000 HN58V1001TI-25E R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI PDF

    BCP51

    Abstract: BCP52 BCP53 BCP54 BCP54-10 BCP54-16 BCP55 BCP56 FA 5516 ScansUX40
    Text: 71100213 OObflMö? BCP54 BCP55 BCP56 ÖTfl • P H I N 7 V SILICON PLANAR EPITAXIAL TRANSISTO RS Medium power npn transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. They are general purpose transistors, primarily designed for audio amplifier output


    OCR Scan     		7110fl2t, BCP54 BCP55 BCP56 BCP51, BCP52 BCP53 BCP54 BCP56 BCP51 BCP54-10 BCP54-16 FA 5516 ScansUX40 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 45 BUZ 45 A, BUZ 45 B SIPMOS Power Transistors • • N channel Enhancement mode Type Vos To ^DS on Package ’> Ordering Code BUZ 45 500 V 9.6 A 25 ”C 0.6 £2 TO-204 AA C67078-A1008-A8 BUZ 45 A 500 V 8.3 A 25 'C 0.8 n TO-204 AA C67078-A1008-A9


    OCR Scan     		O-204 C67078-A1008-A8 C67078-A1008-A9 C67078-A1008-A10 fl235bG 6235b05 PDF

    CY7C1441V33

    Abstract: CY7C1443V33
    Text: CY7C1441V33 CY7C1443V33 CY7C1447V33 PRELIMINARY 1M x 36/2M x 18/512K x 72 Flow-Thru SRAM Features inputs include all addresses, all data inputs, addresspipelining Chip Enable CE , Burst Control Inputs (ADSC, ADSP, and ADV), Write Enables (BWa, BWb, BWc, BWd,


    Original     		CY7C1441V33 CY7C1443V33 CY7C1447V33 36/2M 18/512K 133-MHz 36/2M 18/512K 150-MHz CY7C1441V33 CY7C1443V33 PDF

    Untitled

    Abstract: No abstract text available
    Text: SuperSOT SOT23 PNP SILICON POWER SWITCHING TRANSISTORS FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 ISSUE 3 JUNE 1996_ FEATURES * 625mW POWER DISSIPATION * * lc CONT 2.SA lc Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed)


    OCR Scan     		FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 625mW FMMT717 FMMT617 FMMT618 PDF

    CY7C1443V33

    Abstract: CY7C1441V33
    Text: CY7C1441V33 CY7C1443V33 CY7C1447V33 PRELIMINARY 1M x 36/2M x 18/512K x 72 Flow-through SRAM Features • Supports 133-MHz bus operations • 1M x 36/2M x 18/512K x 72 common I/O • Fast clock-to-output times — 6.5 ns for 133-MHz device — 7.5 ns (for 117-MHz device)


    Original     		CY7C1441V33 CY7C1443V33 CY7C1447V33 36/2M 18/512K 133-MHz 117-MHz CY7C1443V33 CY7C1441V33 PDF

    CY7C1444V33

    Abstract: No abstract text available
    Text: CY7C1444V33 CY7C1445V33 PRELIMINARY 1M x 36/2M x 18 Pipelined DCD SRAM Features • • • • • • • • • • • • • • • • Fast clock speed: 250, 200, and 167 MHz Provide high-performance 3-1-1-1 access rate Fast access time: 2.7, 3.0 and 3.5 ns


    Original     		CY7C1444V33 CY7C1445V33 36/2M CY7C1444V33/CY7C1445V33 300-MHz BG119) CY7C1444V33 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1444V25 CY7C1445V25 PRELIMINARY 1M x 36/2M x 18 Pipelined DCD SRAM Features • • • • • • • • • • • • • • • • Fast clock speed: 300, 250, 200, and 167 MHz Provide high-performance 3-1-1-1 access rate Fast access time: 2.3, 2.7, 3.0 and 3.5 ns


    Original     		CY7C1444V25 CY7C1445V25 36/2M CY7C1444V25/CY7C1445V25 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1447V25 CY7C1443V25 CY7C1441V25 PRELIMINARY 1M x 36/2M x 18/512K x 72 Flow-Thru SRAM Features inputs are gated by registers controlled by a positiveedge-triggered clock input CLK . The synchronous inputs include all addresses, all data inputs, address-pipelining Chip


    Original     		CY7C1447V25 CY7C1443V25 CY7C1441V25 36/2M 18/512K 133-MHz x18/512K 150-MHz PDF

    CY7C1441V33

    Abstract: CY7C1443V33
    Text: CY7C1441V33 CY7C1443V33 CY7C1447V33 PRELIMINARY 1M x 36/2M x 18/512K x 72 Flow-through SRAM Features •Supports 133–MHz bus operations •1M x 36/2M x 18/512K x 72 common I/O •Fast clock–to–output times — 6.5 ns for 133–MHz device — 7.5 ns (for 117–MHz device)


    Original     		CY7C1441V33 CY7C1443V33 CY7C1447V33 36/2M 18/512K 119-ball 165-ball 100-pin CY7C1441V33 CY7C1443V33 PDF