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    75333G Price and Stock

    Rochester Electronics LLC HUFA75333G3

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUFA75333G3 Bulk 307
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.98
    • 10000 $0.98
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    KEMET Corporation SMR7.5333G50K01L4BULK

    33Nf 5 2%v |Kemet SMR7.5333G50K01L4BULK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SMR7.5333G50K01L4BULK Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.947
    • 10000 $0.848
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    Fairchild Semiconductor Corporation HUFA75333G3

    66A, 55V, 0.016ohm, N-Channel Power MOSFET, TO-247 '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUFA75333G3 1,512 1
    • 1 $0.9426
    • 10 $0.9426
    • 100 $0.886
    • 1000 $0.8012
    • 10000 $0.8012
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    75333G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HUF75333G3

    Abstract: 75333P HUF75333P3 HUF75333S3 HUF75333S3S TA75333 TB334
    Text: 75333G3, HUF75333P3, HUF75333S3, HUF75333S3S S E M I C O N D U C T O R 56A, 55V, 0.016 Ohm, N-Channel, UltraFET Power MOSFETs January 1998 Features Description • 56A, 55V • Ultra Low On-Resistance, rDS ON = 0.016Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original     		PDF HUF75333G3, HUF75333P3, HUF75333S3, HUF75333S3S TB334, HUF75333 1-800-4-HARRIS HUF75333G3 75333P HUF75333P3 HUF75333S3 HUF75333S3S TA75333 TB334

    75333p

    Abstract: MOSfet 4362 HUF75333G3 HUF75333P3 HUF75333S3 HUF75333S3S HUF75333S3ST TA75333
    Text: 75333G3, HUF75333P3, HUF75333S3, HUF75333S3S S E M I C O N D U C T O R 56A, 55V, 0.016 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 56A, 55V The HUF75333 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original     		PDF HUF75333G3, HUF75333P3, HUF75333S3, HUF75333S3S HUF75333 1-800-4-HARRIS 75333p MOSfet 4362 HUF75333G3 HUF75333P3 HUF75333S3 HUF75333S3S HUF75333S3ST TA75333

    75333p

    Abstract: diode 66a HUFA75333G3 HUFA75333P3 HUFA75333S3S HUFA75333S3ST TA75333 TB334
    Text: 75333G3, HUFA75333P3, HUFA75333S3S Data Sheet November 2000 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75333G3, HUFA75333P3, HUFA75333S3S 75333p diode 66a HUFA75333G3 HUFA75333P3 HUFA75333S3S HUFA75333S3ST TA75333 TB334

    75333p

    Abstract: MOSfet 4362 HUF75333G3 diode 66a TA75333 HUF75333P3 HUF75333S3S HUF75333S3ST TB334
    Text: 75333G3, HUF75333P3, HUF75333S3S Data Sheet June 1999 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75333G3, HUF75333P3, HUF75333S3S 43ucts 75333p MOSfet 4362 HUF75333G3 diode 66a TA75333 HUF75333P3 HUF75333S3S HUF75333S3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: 75333G3, HUFA75333P3, HUFA75333S3S TM Data Sheet November 2000 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75333G3, HUFA75333P3, HUFA75333S3S

    75333p

    Abstract: diode 66a MOSfet 4362 HUF75333G3 HUF75333P3 HUF75333S3S HUF75333S3ST TA75333 TB334
    Text: 75333G3, HUF75333P3, HUF75333S3S Data Sheet June 1999 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75333G3, HUF75333P3, HUF75333S3S 75333p diode 66a MOSfet 4362 HUF75333G3 HUF75333P3 HUF75333S3S HUF75333S3ST TA75333 TB334

    huf75333g3

    Abstract: No abstract text available
    Text: 75333G3, HUF75333P3, HUF75333S3S Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75333G3, HUF75333P3, HUF75333S3S huf75333g3

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    75333P

    Abstract: HUF75333G3 HUF75333P3 HUF75333S3S HUF75333S3ST TA75333 TB334
    Text: 75333G3, HUF75333P3, HUF75333S3S Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75333G3, HUF75333P3, HUF75333S3S HUF75333 HUF75333S3S 75333P HUF75333G3 HUF75333P3 HUF75333S3ST TA75333 TB334

    75333P

    Abstract: HUFA75333G3 HUFA75333P3 HUFA75333S3S HUFA75333S3ST TA75333 TB334 49e4 33A d
    Text: 75333G3, HUFA75333P3, HUFA75333S3S Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75333G3, HUFA75333P3, HUFA75333S3S 75333P HUFA75333G3 HUFA75333P3 HUFA75333S3S HUFA75333S3ST TA75333 TB334 49e4 33A d

    75333p

    Abstract: HUF75333G3 HUF75333P3 HUF75333S3 HUF75333S3S HUF75333S3ST TA75333 TB334 33A d
    Text: 75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Data Sheet 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 75333p HUF75333G3 HUF75333P3 HUF75333S3 HUF75333S3S HUF75333S3ST TA75333 TB334 33A d

    75333p

    Abstract: huf75333g3 75333G
    Text: interrii 75333G3, HUF75333P3, HUF75333S3S Data S heet Ju n e 1999 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75333G3, HUF75333P3, HUF75333S3S AN7254 AN7260. 75333p huf75333g3 75333G

    75333p

    Abstract: No abstract text available
    Text: 75333G3, HUF75333P3, HUF75333S3, HUF75333S3S HARRIS S E M I C O N D U C T O R 56A, 55V, 0.016 Ohm, N-Channel, UltraFET Power MOSFETs January 1998 MM Features • 56A, 55V • Ultra Low On-Resistance, ros ON = • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan     		PDF HUF75333G3, HUF75333P3, HUF75333S3, HUF75333S3S TB334, HUF75333 1-800-4-HARRIS 75333p

    Untitled

    Abstract: No abstract text available
    Text: 75333G3, HUF75333P3, HUF75333S3S Semiconductor Data Sheet June 1999 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75333G3, HUF75333P3, HUF75333S3S HUF75333