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    IRF822

    Abstract: IRF820 IRF823 IRF821 Diode IRF820
    Text: Standard Power M O SFETs- IRF820, IRF821, IRF822, IRF823 F ile N u m b e r 1581 Power MOS Fîeld-Effect Transistors N -CHANNEL ENHANCEM ENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 450V-500V


    OCR Scan     		IRF820, IRF821, IRF822, IRF823 50V-500V IRF822 IRF823 IRF820 IRF821 Diode IRF820 PDF

    7652n

    Abstract: 2n6766
    Text: • 4302571 0[153734 3ZT ■ HAS 2N 6 76 5 2N 6766 S H a r r is N -Channel Enhancem ent-M ode Power Field-Effect Transistors A u g u st 1991 Features Package T O -20 4 A E BOTTOM VIEW • 25A and 30 A , 1 50V - 2 0 0V • ro s o n = 0 .0 8 5 0 and 0 .1 2 f l


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    Untitled

    Abstract: No abstract text available
    Text: • 4302271 0QS373Ô T7S ■ HAS 2 N 6 7 67 2N 6768 2 H a r r i s August 1991 N -C h an n el E n h an cem en t-M o d e Power M OS F ie ld -E ffe c t Transistors Package Features T O -2 0 4 A A • 12A and 14A, 3 5 0V - 400V BOTTOM VIEW • fDS(on = 0 .4 fl and 0 .3 fi


    OCR Scan     		0QS373Ã PDF