PSHI75D-06
Abstract: PSHI75D 75D06
Text: TM ECO-PAC 2 IGBT Module PSHI 75D/06* H-Bridge Configuration IC25 = 69 A VCES = 600 V VCE sat typ. = 2.3 V Preliminary Data Sheet Short Circuit SOA Capability Square RBSOA F10 A1 H13 S18 N9 NTC P18 PSHI 75D/06* IGBTs *NTC optional Symbol Conditions Maximum Ratings
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75D/06*
42T60
75-06P1
PSHI75D-06
PSHI75D
75D06
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Untitled
Abstract: No abstract text available
Text: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch
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SUM75N15-18P
O-263
SUM75N15-18P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch
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Original
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SUM75N15-18P
O-263
SUM75N15-18P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch
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SUM75N15-18P
O-263
SUM75N15-18P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SUM75N15-18P-E3
Abstract: No abstract text available
Text: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch
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Original
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SUM75N15-18P
O-263
SUM75N15-18P-E3
08-Apr-05
SUM75N15-18P-E3
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PDF
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SUM75N15-18P-E3
Abstract: No abstract text available
Text: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch
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Original
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SUM75N15-18P
O-263
SUM75N15-18P-E3
11-Mar-11
SUM75N15-18P-E3
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PDF
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SUM75N15-18P-E3
Abstract: S-82349-Rev 75D diode
Text: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch
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Original
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SUM75N15-18P
O-263
SUM75N15-18P-E3
18-Jul-08
SUM75N15-18P-E3
S-82349-Rev
75D diode
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Untitled
Abstract: No abstract text available
Text: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch
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Original
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SUM75N15-18P
O-263
SUM75N15-18P-E3
11-Mar-11
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PDF
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single phase inverter IGBT
Abstract: 3 phase inverter circuit control PM75DHA120 55 volt switching power supply circuit circuit using IC SA 110 single phase inverter powerex inverter pwm INVERTER igbt "single phase" BP107 QDQS777
Text: POùlEREX INC _ 51E » • 72 T 4 b 2 1 0005772 311 H P R X P M 75D H A 120 '¡zô ' 7 ' X cf Powerex, Inc., mills Street, Youngwood, Pennsylvania 15697 412 925-7272 /n t C l l i t ï 1 0 C P ^ m3 M o d U l G S Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Q/ng ie p fjas e
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72T4b21
PM75DHA120
BP107,
Amperes/460
PM75DHA120
QDQS777
single phase inverter IGBT
3 phase inverter circuit control
55 volt switching power supply circuit
circuit using IC SA 110
single phase inverter
powerex inverter
pwm INVERTER igbt "single phase"
BP107
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Untitled
Abstract: No abstract text available
Text: 3 E Z 3.9D 5 thru 3EZ200D5 Microsemi Corp. $ The û«xa» experts SCOTTSDALE, AZ For more information call: m m s m im s m 602 941-6300 SILICON 3 WATT ZENER DIODE FEATURES • ZENER VOLTAGE 3 .9V to 200 V • HIGH SURGE CURRENT RATING • 3 W ATTS DISSIPATION IN A N O RM ALLY 1 W ATT PACKAGE
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3EZ200D5
QDD3A21
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3SK38A
Abstract: 3SK38 251C
Text: 3SK O 38A ^ IL IC O N N-CHANNEL MOS FIELD EFFECT TRANSÌSTOR I f s x t l a ^ ''HiSffl INDUSTRIAL APPLICATIONS Unit in mm o Chopper Circuit Applications • * >- * #&39MAX. ; f*s Ron = 5 0 0 n Max. Roff=100Mfi (Min.) 013 Vemf = 2/‘V/'C (Max.) i'' - — h • K u 4 y , ^ — V •V —-*
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100Mfi
0aS91IAX.
3sk38A
3SK38A
3SK38
251C
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K1273
Abstract: K2158 1A4M K1399 K2111 K680A a1464 D82C J356 k1587
Text: QUICK REFERENCE GUIDE QUICK REFERENCE GUIDE 1 QUICK REFERENCE TABLE 3 PIN MINI MOLD □ Switching Diodes I Q UICK REFERENCE GUIDE_ Qß ! 3 PIN MINI MOLD SC-59 . _ □ Transistors and FETs v c e o 15 20 20 2S C 2223 2S A1462 40 30
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SC-59
A1462
2SB624
A1464
B736A
K1582
J185W
RD36M
RD39M
RD10FM
K1273
K2158
1A4M
K1399
K2111
K680A
D82C
J356
k1587
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SK 30 DB 100D
Abstract: No abstract text available
Text: SIE J> • Ö13LL71 0003Ö0Ö 4DD M S E K G SEMIKRQN SEMIKRON INC Maximum Ratings Symbol Conditions Values Units lc = 1 A, Vbe = - 2 V 1000 V VcEV Vbe = - 2 V 1000 V VcBO Ie = 0 1000 V V ebo lc = 0 7 V lc ICM If = -lc Ib D. C. 75 tP= 1 ms 150 - 4 0 . . . + 125
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13LL71
fll3bb71
T-33-35
SK75DM100D
SK 30 DB 100D
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Untitled
Abstract: No abstract text available
Text: Bulletin 12074 rev.C 02/97 International I S R Rectifier SD823C.C s e r ie s FAST RECOVERY DIODES Hockey Puk Version Features • H igh p o w er F A S T re c o v e ry d io d e s e r ie s ■ 2 .0 to 3 .0 Ms re c o v e ry tim e ■ H igh vo lta g e ra tin g s up to 2 5 0 0 V
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SD823C.
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Untitled
Abstract: No abstract text available
Text: Tem ic Si4532DY S e m ic onduc tors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V D S (V ) N -C h a n n e ) P -C h a n n e ) r DS(on) (£2) I d (A ) 0 .0 6 5 @ V G S = 10 V ± 3 .9 0 .0 9 5 @ V GS = 4 .5 V ± 3 .1 0 .0 8 5 @ V Gs = - 1 0 V
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Si4532DY
002072b
S-49520â
I8-Dec-96
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BPMB6A ceramic filter
Abstract: bpmb6a
Text: Audio ICs FM / TV front end BA4425F The BA4425F is a m o n o lith ic 1C d e sig ned fo r FM fro n t end use. It consists o f an RF am p lifie r circuit, m ixer circuit, oscillation circuit, and IF buffer amplifier. Front end •A p p lic a tio n s FM radios
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BA4425F
BA4425F
BPMB6A ceramic filter
bpmb6a
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Untitled
Abstract: No abstract text available
Text: CM75DU-24H Powerex, Inc., 200 Hillls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 DliSl IGBTMOD U-Series Module 75 Amperes/1200 Volts Tc Measured Description: Powerex IG B TM O D ™ Modules are designed for use in switching applications. Each module consists
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CM75DU-24H
Amperes/1200
135ns)
2T4b21
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM75DY-28H HIGH POWER SWITCHING USE INSULATED TYPE I Description: M itsubishi IGBT M odules are de signed fo r use in sw itching a p p li cations. Each m odule consists of tw o IGBTs in a half-bridge co nfig u ration w ith each tra n s is to r having
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CM75DY-28H
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t5d diode
Abstract: No abstract text available
Text: ^53 ZETEX SEMICONDUCTORS D TÎ7QS7Ô OOOSbl? h • ZETB 95D 0 5 6 1 7 D — T -3 ? -0 °l ZV N 0124 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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ZVN0124A
ZVN0124B
ZVN0124L
O-220
t5d diode
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM75DY-12H HIGH POWER SWITCHING USE INSULATED TYPE I Description: M itsubishi IGBT M odules are de signed fo r use in sw itching a pp lica tions. Each m odule consists of tw o IGBTs in a half-bridge configuration w ith each tra n sisto r having a reve rse-connected su pe r-fa st recov
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CM75DY-12H
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DP0702
Abstract: dn1001 dn1002 Adams-Russell SDI Microwave diodes dn1002 MIL-I-45208A DP0701 DP-2000 DN1005A DP1005A
Text: ADAMS-RUSSELL/ I | S D I INC □□0G3Q4 2 |~ V - * T-ZS " Description * Features The DP series of PIN diodes and the DN series of NIP diodes are designed to cover a wide range of applica tions th at fall into the general catagories of switching, phase shifting, attenuating and limiting.
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0E1335E
D-1012and
DP0702
dn1001 dn1002
Adams-Russell
SDI Microwave diodes
dn1002
MIL-I-45208A
DP0701
DP-2000
DN1005A
DP1005A
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CM75DY-24
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM75DY-24H HIGH POWER SWITCHING USE INSULATED TYPE I Description: M itsubishi IGBT M odules are d e signed fo r use in sw itching app li cations. Each m odule consists of tw o IGBTs in a half bridge co nfig u ration w ith each tra n sisto r having
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CM75DY-24H
CM75DY-24
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Untitled
Abstract: No abstract text available
Text: 74LS375 Signetics Latch Quad Bistable Latch Product Specification Logic Products FEATURES TYPE • Quad transparent latch • Complementary outputs T Y P IC A L PR O P A G A TIO N D E LA Y T Y P IC A L SU PP LY C U R R E N T TO T A L 1 2 ns 6.3m A 74LS375
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74LS375
1N916,
1N3064,
500ns
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75DSA120
Abstract: PM75DSA120
Text: MITSUBISHI INTELLIGENT POWER MODULES PM75DSA120 FLAT-BASE TYPE INSULATED PACKAGE N 1. 2. 3. 4. 5. SIDE VN1 SN R CN1 VN C FNO P SIDE VP1 SPR CP1 VPC FPO Description: M itsubishi Intelligent Pow er M od ules are isolated base m odules d e signed fo r pow er sw itching app lica
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PM75DSA120
75DSA120
PM75DSA120
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