Untitled
Abstract: No abstract text available
Text: R6076ENZ1 Nch 600V 76A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.042W ID 76A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6076ENZ1
O-247
R1102A
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Untitled
Abstract: No abstract text available
Text: R6076ENZ1 Nch 600V 76A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.042W ID 76A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6076ENZ1
O-247
R1102A
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IXTA76P10T
Abstract: ixth76p10t 76P10T DIODE 76A IXTP76P10T
Text: Preliminary Technical Information TrenchPTM Power MOSFET IXTA76P10T IXTP76P10T IXTH76P10T P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on - 100V - 76A Ω 24mΩ TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings
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IXTA76P10T
IXTP76P10T
IXTH76P10T
O-263
O-220
IXTA76P10T
76P10T
ixth76p10t
DIODE 76A
IXTP76P10T
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Untitled
Abstract: No abstract text available
Text: AP99T06AGI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D BVDSS RDS ON Low On-resistance Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 60V 4.2m 76A S Description
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AP99T06AGI-HF
AP99T06A
O-220CFM
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP90T06GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower On-resistance Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 68V 9.5m 76A S Description
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AP90T06GP-HF
O-220
100us
100ms
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FCH76N60
Abstract: No abstract text available
Text: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCH76N60N
FCH76N60N
218nC)
FCH76N60
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76N15T2
Abstract: No abstract text available
Text: Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 IXFA76N15T2 IXFP76N15T2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier = 150V = 76A Ω ≤ 20mΩ TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings
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IXFA76N15T2
IXFP76N15T2
O-263
76N15T2
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76N15T2
Abstract: IXFP76N15T2 IXFA76N15T2 15-2A
Text: Advance Technical Information IXFA76N15T2 IXFP76N15T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier = 150V = 76A Ω ≤ 20mΩ TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings
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IXFA76N15T2
IXFP76N15T2
O-263
O-220AB
76N15T2
IXFP76N15T2
IXFA76N15T2
15-2A
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IXFP76N15T2
Abstract: IXFA76N15T2
Text: Preliminary Technical Information IXFA76N15T2 IXFP76N15T2 IXFH76N15T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 = 150V = 76A 20m RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP)
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IXFA76N15T2
IXFP76N15T2
IXFH76N15T2
O-263
O-220AB
O-247
IXFA76N15T2
76N15T2
IXFP76N15T2
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DIODE 76A
Abstract: APT30M36JLL ISOTOP
Text: APT30M36JLL 300V POWER MOS 7 R 76A 0.036Ω MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT30M36JLL
OT-227
DIODE 76A
APT30M36JLL
ISOTOP
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IXTH76P10T
Abstract: IXTA76P10T VDSS -60 RDS 0,50 ID 1,8 A IXTP76P10T
Text: IXTA76P10T IXTP76P10T IXTH76P10T TrenchPTM Power MOSFET VDSS ID25 = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated - 100V - 76A Ω 25mΩ TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTA76P10T
IXTP76P10T
IXTH76P10T
O-263
O-220AB
O-247
IXTA76P10T
76P10T
IXTH76P10T
VDSS -60 RDS 0,50 ID 1,8 A
IXTP76P10T
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Untitled
Abstract: No abstract text available
Text: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCH76N60N
FCH76N60N
218nC)
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Untitled
Abstract: No abstract text available
Text: IXTA76P10T IXTP76P10T IXTH76P10T TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on D - 100V - 76A Ω 25mΩ TO-263 AA (IXTA) G G S S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTA76P10T
IXTP76P10T
IXTH76P10T
O-263
O-220AB
O-247
IXTA76P10T
76P10T
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S3215
Abstract: No abstract text available
Text: CED6056/CEU6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 76A , RDS ON = 6.2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package.
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CED6056/CEU6056
O-251
O-252
O-251
S3215
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diode 304
Abstract: 11200-1 B2VR 72 RG
Text: APT30M40B2VR APT30M40LVR 300V 76A 0.040W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT30M40B2VR
APT30M40LVR
O-264
APT30M40
O-247
diode 304
11200-1
B2VR
72 RG
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Untitled
Abstract: No abstract text available
Text: APT30M40LVFR 300V POWER MOS V 76A 0.040Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT30M40LVFR
O-264
O-264
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FCA76N60N
Abstract: FCA76N60 613 MOSFET
Text: SupreMOSTM FCA76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description • RDS on = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ. Qg = 218nC)
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FCA76N60N
218nC)
FCA76N60N
FCA76N60
613 MOSFET
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Untitled
Abstract: No abstract text available
Text: APT30M40B2VR APT30M40LVR 300V 76A 0.040W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT30M40B2VR
APT30M40LVR
O-264
APT30M40
O-247
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FCH76N60N
Abstract: FCH76N60 N-Channel mosfet 600v ir
Text: SupreMOSTM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description • RDS on = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCH76N60N
218nC)
FCH76N60N
FCH76N60
N-Channel mosfet 600v ir
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APT30M36JFLL
Abstract: No abstract text available
Text: APT30M36JFLL 300V R POWER MOS 7 0.036Ω 76A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT30M36JFLL
OT-227
APT30M36JFLL
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APT30M40B2VFR
Abstract: APT30M40LVFR
Text: APT30M40B2VFR APT30M40LVFR 0.040Ω Ω 300V 76A POWER MOS V FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT30M40B2VFR
APT30M40LVFR
O-264
O-264
APT30M40B2VFR
O-247
APT30M40LVFR
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Untitled
Abstract: No abstract text available
Text: APT30M36JLL 76A 0.036Ω 300V R POWER MOS 7 MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT30M36JLL
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Untitled
Abstract: No abstract text available
Text: APT30M36JLL 76A 0.036Ω 300V POWER MOS 7 R MOSFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT30M36JLL
OT-227
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Untitled
Abstract: No abstract text available
Text: APT30M36JLL 76A 0.036W 300V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses
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APT30M36JLL
OT-227
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