789101 Search Results

789101 Result Highlights (5)

Part	Manufacturer	Description
UPD789101AMC-XXX-5A4-E2-A	Renesas Electronics Corporation	8-bit Microcontrollers for General Purpose Applications (Non Promotion), LSSOP, /Embossed Tape
UPD789101AMC-XXX-5A4-E1-A	Renesas Electronics Corporation	8-bit Microcontrollers for General Purpose Applications (Non Promotion), LSSOP, /Embossed Tape
UPD789101AMC-XXX-5A4-A	Renesas Electronics Corporation	8-bit Microcontrollers for General Purpose Applications (Non Promotion), LSSOP, /Embossed Tape
UPD789101AMC(A1)-XXX-5A4	Renesas Electronics Corporation	8-bit Microcontrollers for General Purpose Applications (Non Promotion), LSSOP, /Embossed Tape
UPD789101AMC-XXX-5A4-E1	Renesas Electronics Corporation	8-bit Microcontrollers for General Purpose Applications (Non Promotion), LSSOP, /Embossed Tape

789101 Price and Stock

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SAB Bröckskes 7891014 CABLE 20COND 26AWG GRY SHD 1=1FT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	7891014		1,095		1	1 $14.81 10 $14.81 100 $14.81 1000 $10.63 10000 $10.63	Buy Now
RS	7891014	Linear Foot		16 Weeks	1	1 $19.95 10 $18.95 100 $18.35 1000 $18.35 10000 $18.35	Get Quote
Weidmüller Interface GmbH & Co. KG 7789101030 CABLE ASSEMBLY INTERFACE 9.84'
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	7789101030	Bulk			1	1 $25.03 10 $25.03 100 $25.03 1000 $25.03 10000 $25.03	Buy Now
Avnet Americas	7789101030	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	7789101030					1 $23.9 10 $20.94 100 $18.74 1000 $17.7 10000 $17.7	Get Quote
Weidmüller Interface GmbH & Co. KG 7789101010 CABLE ASSEMBLY INTERFACE 3.28'
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	7789101010	Bulk			1	1 $19.3 10 $19.3 100 $19.3 1000 $19.3 10000 $19.3	Buy Now
Avnet Americas	7789101010	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	7789101010					1 $20.42 10 $17.7 100 $14.59 1000 $13.32 10000 $13.32	Get Quote
Maxbotix Inc MB7789-101 ULTRASONIC SENSR 4-20SC-MAXSONAR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MB7789-101	Bulk			1	1 $273.37 10 $273.37 100 $273.37 1000 $273.37 10000 $273.37	Buy Now
New Advantage Corporation	MB7789-101		4		1	1 $663.51 10 $619.28 100 $619.28 1000 $619.28 10000 $619.28	Buy Now
Weidmüller Interface GmbH & Co. KG 7789101040 PAC-UNIV-HE10-LCF-4M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	7789101040	Box			1	1 $36.56 10 $36.56 100 $36.56 1000 $36.56 10000 $36.56	Buy Now
Avnet Americas	7789101040	Bulk			1	1 $17.7801 10 $17.7801 100 $17.7801 1000 $17.7801 10000 $17.7801	Buy Now
Mouser Electronics	7789101040					1 $26.7 10 $23.39 100 $20.93 1000 $19.78 10000 $19.78	Get Quote

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789101 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ba1s Abstract: No abstract text available Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data	Original	PDF	IS43LR32400E 32Bits IS43LR32400E Figure38 90Ball -25oC 4Mx32 IS43LR32400E-6BLE ba1s
Untitled Abstract: No abstract text available Text: FMD4A32LCx–30Ex 128M 4Mx32 Low Power DDR SDRAM Revision 0.2 Jan. 2009 Rev. 0.2, Jan. ‘09 1 FMD4A32LCx–30Ex Document Title 128M(4Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Jul. 2nd , 2008 Preliminary 0.0 Initial Draft	Original	PDF	FMD4A32LCxâ 4Mx32)
Untitled Abstract: No abstract text available Text: FMD4B32LBx–37Ex 256M 8Mx32 Low Power DDR SDRAM Revision 1.0 Jan. 2009 Rev. 1.0, Jan. ‘09 1 FMD4B32LBx–37Ex Document Title 256M(8Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Jan. 17th, 2008	Original	PDF	FMD4B32LBxâ 8Mx32)
Untitled Abstract: No abstract text available Text: 8 7 6 5 4 3 2 1 NOTES 3MTM RIBBON CABLE WIREMOUNT SOCKET ASSEMBLY, 1.27mm 0.050" PITCH, 451 SERIES 1. MATERIAL: BODY: PBT, UL94V-0 COVER: PBT, UL94V-0 STRAIN RELIEF: STAINLESS STEEL CONTACTS: BeCu ALLOY. Performance: Current Rating: 1.0 A, all lines energized,	Original	PDF	UL94V-0 1250VACrms
FY520 Abstract: FW533 MT28F322D18 Text: ADVANCE 2 MEG x 16 BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa	Original	PDF	MT28F322D18FH 100ns MT28F322D18FH FY520 FW533 MT28F322D18
PC28F256P33 Abstract: JS28F256P33 PC48F pc28F256P33T PC28F256P33B PC28F256p33bf PC28F256P33TF DIODE 61 BP DIODE BP truth table NOT gate 74 Text: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read	Original	PDF	P33-65nm) 256-Mbit, 512-Mbit 256M/256M) 105ns 16-word 52MHz 512-word 32-KByte PC28F256P33 JS28F256P33 PC48F pc28F256P33T PC28F256P33B PC28F256p33bf PC28F256P33TF DIODE 61 BP DIODE BP truth table NOT gate 74
JS28F256P33 Abstract: PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85 Text: Numonyx StrataFlash Embedded Memory P33 Datasheet Product Features High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst	Original	PDF	52MHz 32-KByte 128-KByte 130nm 64-Mbit RD48F2000P0XBQ0 128-Mbit RD48F3000P0XBQ0 256-Mbit RD48F4000P0XBQ0 JS28F256P33 PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85
28F256L30 Abstract: 28F128L30 28F640L30 Text: 1.8 Volt Intel StrataFlash Wireless Memory with 3.0 Volt I/O L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 90 ns initial access — 50MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode	Original	PDF	28F640L30, 28F128L30, 28F256L30 50MHz 16K-Word 64K-Word com/design/flcomp/packdata/298049 28F256L30 28F128L30 28F640L30
M69KB128AA Abstract: BCR10 Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and	Original	PDF	M69KB128AA 104MHz M69KB128AA BCR10
Straddle-Mount Abstract: PCIe cable pinout 78910 PR04 B0813 pci-e drawing Text: 8 7 6 5 4 3 2 1 NOTES 1 DIMENSIONS ARE IN MILLIMETERS. 3MTM TWIN AXIAL CABLE ASSEMBLY FOR PCIe X16 EXTENDER CARD APPLICATIONS 2 3MTM RIBBON TWINAX DESCRIPTION: 30 AWG, SILVER PLATED SIGNAL WIRE IMPEDANCE: 85 5 OHM OVERALL RIBBON WIDTH: 24.90 MM OVERALL RIBBON THICKNESS: 0.75 MM	Original	PDF	SP5144 8KC3-0726-XXXX, Straddle-Mount PCIe cable pinout 78910 PR04 B0813 pci-e drawing
K1B5616BBM Abstract: K1B5616BA D254 D255 K1B5616BAM K1B5616BAM-I UtRAM Density Text: Preliminary UtRAM K1B5616BA B M 256Mb (16M x 16 bit) UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN	Original	PDF	K1B5616BA 256Mb K1B5616BBM D254 D255 K1B5616BAM K1B5616BAM-I UtRAM Density
BCR10 Abstract: M69KM096AA Text: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ Multiplexed Address/Data bus	Original	PDF	M69KM096AA 83MHz 32-Word) 83MHz BCR10 M69KM096AA
Untitled Abstract: No abstract text available Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and	Original	PDF	M69KB128AA 104MHz
Untitled Abstract: No abstract text available Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)	Original	PDF	M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56

cr1 5 p26z Abstract: No abstract text available Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ	Original	PDF	128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 cr1 5 p26z
CR10 Abstract: M58LR128HB M58LR128HT VFBGA56 Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program	Original	PDF	M58LR128HT M58LR128HB VFBGA56 CR10 M58LR128HB M58LR128HT VFBGA56
FY550 Abstract: 44A4h Text: 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D20 MT28F322D18 Low Voltage, Extended Temperature 0.22µm Process Technology FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture – Support for true concurrent operation with zero	Original	PDF	MT28F322D20 MT28F322D18 MT28F322D18 110ns/30 MT28F322D18FH FY550 44A4h
Untitled Abstract: No abstract text available Text: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages	Original	PDF	MT45W2MW16BGB 16-word 09005aef82832fa2 09005aef82832f5f
BCR100 Abstract: No abstract text available Text: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:	Original	PDF	128Mb/64Mb 09005aef81d721fb pdf/09005aef81d72262 BCR100
pc28f128p33b Abstract: PC28F128P33 JS28F128P33BF js28f640p33 pc28f128p33bf60 P33-65nm RC28F128P33 JS28F128P33TF70 JS28F128P33 PC28F128P33T Text: Numonyx AxcellTM P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell SBC Datasheet Product Features High performance: — 60ns initial access time for Easy BGA — 70ns initial access time for TSOP — 25ns 8-word asynchronous-page read	Original	PDF	P33-65nm 128-Mbit, 64-Mbit 52MHz 256-word 32-KByte 128-KByte P33-65nm 40Mhz pc28f128p33b PC28F128P33 JS28F128P33BF js28f640p33 pc28f128p33bf60 RC28F128P33 JS28F128P33TF70 JS28F128P33 PC28F128P33T
SR52 Abstract: FY618 SR-52 Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM	Original	PDF	16-word 16-bit) 09005aef80b425b4 MT28F1284W18 SR52 FY618 SR-52
a6583 Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0 Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers	Original	PDF	M30L0R8000T0 M30L0R8000B0 54MHz a6583 CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
ba 5937 fp Abstract: No abstract text available Text: PRODUCT PREVIEW in te l FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT 28F800F3, 28F160F3 Includes Extended and Automotive Temperature Specifications • High Performance — 54 MHz Effective Zero Wait-State Performance — Synchronous Burst-Mode Reads	OCR Scan	PDF	28F800F3, 28F160F3 ba 5937 fp
28F800F3T Abstract: te28f800f3t120 B3T125 Text: intei PRELIMINARY 3 VOLT FAST BOOT BLOCK FLASH MEMORY 28F800F3 and 28F160F3 x16 • High Performance — 54 MHz Effective Zero Wait-State Performance — Synchronous Burst-Mode Reads — Asynchronous Page-Mode Reads ■ Supports Code Plus Data Storage — Optimized for Flash Data Integrator	OCR Scan	PDF	28F800F3 28F160F3 32-Kword 56-Lead 28F800F3T te28f800f3t120 B3T125

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789101 Search Results

789101 Result Highlights (5)

789101 Price and Stock

SAB Bröckskes 7891014

Weidmüller Interface GmbH & Co. KG 7789101030

Weidmüller Interface GmbH & Co. KG 7789101010

Maxbotix Inc MB7789-101

Weidmüller Interface GmbH & Co. KG 7789101040

789101 Datasheets Context Search

ba1s

Untitled

Untitled

Untitled

FY520

PC28F256P33

JS28F256P33

28F256L30

M69KB128AA

Straddle-Mount

K1B5616BBM

BCR10

Untitled

Untitled

cr1 5 p26z

CR10

FY550

Untitled

BCR100

pc28f128p33b

SR52

a6583

ba 5937 fp

28F800F3T