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    7943 COE Search Results

    7943 COE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    68779-434HLF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Vertical Header, Through Hole, Double Row, 34 Positions, 2.54 mm (0.100in)Pitch. Visit Amphenol Communications Solutions
    68779-430HLF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Vertical Header, Through Hole, Double Row, 30 Positions, 2.54 mm (0.100in)Pitch. Visit Amphenol Communications Solutions
    68779-436HLF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Vertical Header, Through Hole, Double Row, 36 Positions, 2.54 mm (0.100in)Pitch. Visit Amphenol Communications Solutions
    68779-438HLF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Vertical Header, Through Hole, Double Row, 38 Positions, 2.54 mm (0.100in)Pitch. Visit Amphenol Communications Solutions
    68779-432HLF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Vertical Header, Through Hole, Double Row, 32 Positions, 2.54 mm (0.100in)Pitch. Visit Amphenol Communications Solutions

    7943 COE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LP 8029

    Abstract: telefunken diodes SI 61 L TSHA4400 TSHA4401 photodetector
    Text: TELEFUNKEN Semiconductors TSHA 440. GaAlAs Infrared Emitting Diode in ø 3 mm T–1 Package Description The TSHA 44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs


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    D-74025 LP 8029 telefunken diodes SI 61 L TSHA4400 TSHA4401 photodetector PDF

    TSHA440

    Abstract: TSHA4400 TSHA4401
    Text: TSHA440. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 3 mm T–1 Package Description 94 8398 The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs


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    TSHA440. TSHA44. D-74025 20-May-99 TSHA440 TSHA4400 TSHA4401 PDF

    TSHA440

    Abstract: TSHA4400 TSHA4401
    Text: TSHA440. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.


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    TSHA440. TSHA44. D-74025 11-May-04 TSHA440 TSHA4400 TSHA4401 PDF

    TSHA440

    Abstract: No abstract text available
    Text: TSHA440. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 3 mm T-1 Package Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about


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    TSHA440. TSHA44. D-74025 07-Apr-04 TSHA440 PDF

    TSHA4400

    Abstract: TSHA4401 TSHA440
    Text: TSHA440. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 3 mm T–1 Package Description 94 8398 The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs


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    TSHA440. TSHA44. D-74025 20-May-99 TSHA4400 TSHA4401 TSHA440 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSHA440. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 3 mm T-1 Package Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about


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    TSHA440. TSHA44. D-74025 11-May-04 PDF

    TSHA4401

    Abstract: TSHA440 TSHA4400
    Text: TSHA4400, TSHA4401 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 20°


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    TSHA4400, TSHA4401 2002/95/EC 2002/96/EC TSHA440. 18-Jul-08 TSHA4401 TSHA440 TSHA4400 PDF

    TSHA440

    Abstract: TSHA4400 TSHA4401
    Text: TSHA440. GaAlAs Infrared Emitting Diodes in ø 3 mm T–1 Package Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 50 %


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    TSHA440. TSHA44. D-74025 15-Jul-96 TSHA440 TSHA4400 TSHA4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSHA440. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 3 mm T-1 Package Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about


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    TSHA440. TSHA44. D-74025 11-May-04 PDF

    TSHA4400

    Abstract: TSHA440 TSHA4401 LP880
    Text: TSHA440. Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ø 3 mm T–1 Package Description 94 8398 The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs


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    TSHA440. TSHA44. D-74025 20-May-99 TSHA4400 TSHA440 TSHA4401 LP880 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSHA440. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.


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    TSHA440. TSHA44. 08-Apr-05 PDF

    TSHA440

    Abstract: TSHA4400 TSHA4401
    Text: TSHA4400, TSHA4401 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 20°


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    TSHA4400, TSHA4401 2002/95/EC 2002/96/EC TSHA440. 11-Mar-11 TSHA440 TSHA4400 TSHA4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSHA440. Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about


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    TSHA440. TSHA44. 18-Jul-08 PDF

    TSHA440

    Abstract: TSHA4400 TSHA4401
    Text: TSHA440. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.


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    TSHA440. TSHA44. 08-Apr-05 TSHA440 TSHA4400 TSHA4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 875 nm High reliability


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    TSHA4400, TSHA4401 2002/95/EC 2002/96/EC TSHA440. 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 875 nm High reliability


    Original
    TSHA4400, TSHA4401 2002/95/EC 2002/96/EC TSHA440. 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: p = 875 nm High reliability


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    TSHA4400, TSHA4401 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 875 nm High reliability


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    TSHA4400, TSHA4401 2002/95/EC 2002/96/EC TSHA440. 2002/95/EC. 2011/65/EU. JS709A PDF

    7945BN

    Abstract: 7943A 7945BR dc/PCF 7943 7943
    Text: ANALOG DEVICES FEATURES 12-Bit M ultiplying DACs Guaranteed Specifications w ith +3.3 V /+ 5 V Supply 0.5 LSBs INL and DNL Low Power: 5 jiW typ Fast Interface 40 ns Strobe Pulsewidth (AD7943 40 ns W rite Pulsewidth (AD7945, AD7948) Low Glitch: 60 nV-s w ith A m plifier Connected


    OCR Scan
    12-Bit AD7943) AD7945, AD7948) AD843 AD7943/AD7945/AD7948 20-Lead 7945BN 7943A 7945BR dc/PCF 7943 7943 PDF

    AD7945

    Abstract: No abstract text available
    Text: ANALOG DEVICES FEATURES 12-Bit M ultiplying DACs Guaranteed Specifications w ith +3.3 V /+ 5 V Supply 0.5 LSBs INL and DNL Low Power: 5 jiW typ Fast Interface 40 ns Strobe Pulsewidth (AD7943 40 ns W rite Pulsewidth (AD7945, AD7948) Low Glitch: 60 nV-s w ith A m plifier Connected


    OCR Scan
    12-Bit AD7943) AD7945, AD7948) AD843 AD7943/AD7945/AD7948 20-Lead RS-20) AD7945 PDF

    AD7945

    Abstract: AD843 AD7543 AD7545 AD7548 AD7943 AD7943AN-B AD7948 OP07
    Text: ► AN ALO G D E V IC E S +3.3 V/+5 V Multiplying 12-Bit DACs AD7943/AD7945/AD7948 FUNCTIONAL BLOCK DIAGRAMS FEATURES 12-B it M u ltip ly in g DACs G u a ra n te ed S p ec ifica tio n s w ith +3.3 V /+ 5 V S u p p ly 0.5 LSBs IN L and DIML L o w Pow er: 5 |xW ty p


    OCR Scan
    12-Bit AD7943/AD7945/AD7948 AD7943) AD7945, AD7948) AD843 AD7943, AD7945 AD7948 AD7543 AD7545 AD7548 AD7943 AD7943AN-B OP07 PDF

    AKO 50 365

    Abstract: rx 2 g 7943 COE
    Text: A D V A N C E IN F O R M A T IO N Am7943 A Advanced Micro Devices Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant current feed -1 9 V to -56.5 V battery operation ■ Current gain = 200 ■ Programmable loop detect threshold


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    Am7943 TR-TSY-000057 EIA/TIA-464-A 5474A-- 6853A AKO 50 365 rx 2 g 7943 COE PDF

    ss 7941

    Abstract: TSHA4400
    Text: Tem ic TSHA440. S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 0 3 mm T -l Package Description The TSHA44.series are high efficiency infrared ermitting diodes in GaAlAs on GaAlAs technology, molde;d in a clear, untinted plastic package.


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    TSHA440. TSHA44. D-74025 15-Jul-96 ss 7941 TSHA4400 PDF

    aq843

    Abstract: tmki AD7543 AD7545 AD7548 AD7943 AD7945 AD7948 JUI7945
    Text: Q ANALOG DEVICES V/+5 V Multiplying . +3.3 V/+5V ' 12-Bit DACs AD7943/AD7945/AD7948 FEATURES „ > , , 12-Bit Multiplying DACs Guaranteed Specifications with +3.3 V/+5 V Supply 0.5 LSBs INL and DNL Low Power: 5 |iW typ Fast Interface 40 ns Strobe Pulse Width AD7943


    OCR Scan
    12-Bit AD7943/AD7945/AD7948 AD79431 AD7945, AD7948) AQ843 AD7943, AD7945 AD7948 aq843 tmki AD7543 AD7545 AD7548 AD7943 JUI7945 PDF