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    7C256 Search Results

    7C256 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD27C256-15/B Rochester Electronics LLC MD27C256-15/B Visit Rochester Electronics LLC Buy
    AM27C256-70PI Rochester Electronics LLC OTP ROM, 32KX8, 70ns, CMOS, PDIP28, DIP-28 Visit Rochester Electronics LLC Buy
    MD27C256-20/B Rochester Electronics LLC Replacement for Intel part number MD27C256-20. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    AM27C256-120DC Rochester Electronics LLC UVPROM, 32KX8, 120ns, CMOS, CDIP28, DIP-28 Visit Rochester Electronics LLC Buy
    AM27C256-120PC-G Rochester Electronics AM27C256 - 256Kb (32K x 8-Bit) CMOS OTP EPROM Visit Rochester Electronics Buy
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    7C256 Price and Stock

    Microchip Technology Inc AT27C256R-45PU

    IC EPROM 256KBIT PARALLEL 28DIP
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    Microchip Technology Inc AT27C256R-45JU-T

    IC EPROM 256KBIT PARALLEL 32PLCC
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    Microchip Technology Inc AT27C256R-70JU

    IC EPROM 256KBIT PARALLEL 32PLCC
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    Microchip Technology Inc AT27C256R-45JU

    IC EPROM 256KBIT PARALLEL 32PLCC
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    Microchip Technology Inc AT27C256R-70JU-T

    IC EPROM 256KBIT PARALLEL 32PLCC
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    7C256 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    7C256 Alliance Semiconductor High Performance 32Kx8 CMOS SRAM Original PDF
    7C256 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    7C256-10 Alliance Semiconductor High Performance 32Kx8 CMOS SRAM Original PDF
    7C256-12 Alliance Semiconductor High Performance 32Kx8 CMOS SRAM Original PDF
    7C256-15 Alliance Semiconductor High Performance 32Kx8 CMOS SRAM Original PDF
    7C256-35 Alliance Semiconductor High Performance 32Kx8 CMOS SRAM Original PDF

    7C256 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AS7C256-20JC

    Abstract: AS7C256-15PC AS7C256-12JC AS7C3256-12JC AS7C3256-20JC AS7C256 AS7C256-12 AS7C256-12PC AS7C256-15 AS7C256-20
    Text: 129 0%(5#4<<<# $6:&589 $6:&6589 8926169#65.ð;#&026#65$0#+&RPPRQ#,22, HDWXUHV • Very low power consumption: STANDBY - 22 mW (7C256) / max CMOS I/O - 7.2 mW (AS7C3256) / max CMOS I/O • 2.0V data retention • Easy memory expansion with CE and OE inputs


    Original
    PDF AS7C256) AS7C3256) 28-pin AS7C256 AS7C3256 accessS7C256-12TI AS7C256-15TI AS7C256-20TI AS7C256-15JC AS7C256-20JC AS7C256-15PC AS7C256-12JC AS7C3256-12JC AS7C3256-20JC AS7C256 AS7C256-12 AS7C256-12PC AS7C256-15 AS7C256-20

    AS7C256-20JC

    Abstract: AS7C256 taa 723 7C256-10 7C256-12 7C256-15 AS7C256L AS7C256-15PC 7C1024
    Text: High Performance 32Kx8 CMOS SRAM 7C256 7C256L 32K×8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words × 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE and OE inputs – 10/12/15/20/25/35 ns address access time


    Original
    PDF AS7C256 AS7C256L 28-pin 7C512 7C1024 AS7C256-20JC AS7C256 taa 723 7C256-10 7C256-12 7C256-15 AS7C256L AS7C256-15PC 7C1024

    7C1024

    Abstract: No abstract text available
    Text: 6 4 K x 8 Fast S R A M ^ A S 7C 5I2 F eatures Logic B lock D iagram ♦ High Performance CMOS: tAA=12-35 ns ♦ Fast OE access: tOF=3-8 ns ♦ Low power - 688 mW 100 MHz - 27.5 mW @ 10 MHz standby - 4.25 mW @ 10 MHz standby: L version ♦ Socket compatible with 7C256,7C1024


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    PDF 7C256 7C1024 AS7C512 AS7C164, AS7C256, AS7C1024, 7C512-12 7C512-15 7C512-20 7C512-25 7C1024

    AS7C512-20JC

    Abstract: AS7C512-15PC VLN 2003 7C256 AS7C512
    Text: AS7C512 5V 64K x8 CMOS SRAM 1Equal access and cycle tim es 1Easy m em ory expansion w ith CE1, CE2, OE inputs 1TTL-compatible, three-state I/O - 3 2-pin JEDEC standard packages - 300 m il PDIP and SOJ Socket com patible w ith 7C256 and 7C1024 1ESD p rotection > 2000 volts


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    PDF AS7C512 64Kx8 7C256 7C1024 256x256x8 TQ0344R AS7C512-20JC AS7C512-15PC VLN 2003

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M2 7C256K, -2, -3 2 6 2 1 4 4 - B IT 3 2 7 6 8 - W ORD BY 8 -B IT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The Mitsubishi M 5 M 2 7 C 2 5 6 K is a high-speed 2 6 2 1 4 4 -b it ultraviolet erasable and electrically reprogrammable read


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    PDF 7C256K,

    TAA103

    Abstract: No abstract text available
    Text: A 3 2 K x 8 Fast S R A M Features Logic Block Diagram ♦ High Performance CMOS: tAA=10-35 ns ♦ Fast OE access: t0 E=3-8 ns ♦ Low power - 660 m W @ 100 MHz - 11 mW @ 10 MHz standby - 2.75 mW @ 10 MHz standby: L version ♦ Automatic CE power down ♦ 2V data retention L version


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    PDF AS7C256 7C256-12 7C256-10 7C256-15 7C256-20 7C256-25 7C256-35 TAA103

    intel 29F

    Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
    Text: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256


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    PDF 628127H T7164 712S6 DT71Q08 1S61C64AH LS61C2S6AH IS61LV3216 S61C512 IS61C64 S61LV256 intel 29F T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568

    Untitled

    Abstract: No abstract text available
    Text: High Performance 128Kx8 C M O S SRAM p i AS7C1024 AS7C1024L 128Kx8 CM O S S RAM Common I/O FEATURES • Organization: 131,072 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE1, CE2, OE inputs - 10/12/15/20/25/35 ns address access time


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    PDF 128Kx8 AS7C1024 AS7C1024L 128Kx8 32-pin 7C256 7C512

    Untitled

    Abstract: No abstract text available
    Text: High Performance 32Kx8 CMOS SRAM p i 7C256 7C256L 32Kx8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words x 8 bits Equal access and cycle times • High speed Easy memory expansion with CE and OE inputs - 10/12/15/20/25/35 ns address access time


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    PDF 32Kx8 AS7C256 AS7C256L 32Kx8 28-pin 7C512 7C1024 versio-9177

    7C1024

    Abstract: AS7C256
    Text: 7C256 5V 32K •8 CMOS SRAAA /Common I OV Features • O rganization: 3 2 ,7 6 8 w ords X 8 bits • H igh speed - 1 0 /1 2 /1 5 / 2 0 ns address access tim e - 3 / 3 / 4 / 5 ns o utput enable access tim e • Low pow er consum ption - Active: 660 m W m ax 10 ns cycle


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    PDF AS7C256 7C512 7C1024 1DD344 AS7C256

    Untitled

    Abstract: No abstract text available
    Text: MICROCHIP TECHNOLOGY INC ESE D blü3201 0DG47Ô1 4 • <3.-251 7C256 Microchip 256K 32K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance —150ns maximum access time. • CMOS Technoiogy for low power consumption —20mA Active current


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    PDF 0DG47Ã 27C256 150ns 100nA -28-pin -32-pln S11001D-7 L103SQ1 0DD47afl 27C256

    Untitled

    Abstract: No abstract text available
    Text: H ig h P e r f o r m a n c e 32KX8 C M O S SR A M H A S7C 256 A 32K X 8 CMOS SRAM C om m on I / O Features • Organization: 32,768 words x 8 bits • High speed - 1 0 /1 2 /1 S /2 0 ns address access time - 3/ 3 / 4 / S ns output enable access time • Low power consumption


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    PDF 32KX8 AS7C256-12PC AS7C256-15PC AS7C256-20PC AS7C256-10JC AS7C2S6-12JC AS7C2S6-12JI AS7C256-15JC AS7C256-I5JI AS7C256-20JC

    AS7C512-20JC

    Abstract: AS7C512-15pc AS7C512 10n12 AS7C512-12JC 7C256 AS7C512L AS7CS12 Static Random Access Memory SRAM 7CS12-20
    Text: High-Performance p i AS7C512 : AS7C512L CMOS SRAM 64Kx8 CMOS SRAM Common I/O FEATURES Organization; 65,536 words x 8 bits Equal access and cycle times High speed Easy memory expansion with CE1, CE2, OE inputs - 12/15/20/25/35 ns address access time TTL-compatible, three-state I/O


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    PDF AS7C512 AS7C512L 64Kx8 32-pin 7C256 7C1024 AS7C512-20JC AS7C512-15pc AS7C512 10n12 AS7C512-12JC AS7C512L AS7CS12 Static Random Access Memory SRAM 7CS12-20

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs 7C256AK-I 2 6 2 144 -B IT 3 27 68 -W O R D BY 8-B IT CMOS ER A SA B LE AND E LE C T R IC A LLY REPROGRAM MABLE ROM DESCRIPTION The M itsubishi M 5 M 2 7 C 2 5 6 A K -I is a high-speed 2 6 2 1 4 4 -b it ultraviolet erasable and electrically reprogram m able read


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    PDF M5M27C256AK-I M5M27C256AK-I

    AS7C256

    Abstract: No abstract text available
    Text: II 81 High Performance 32Kx8 CMOS SRAM 7C256 7C256L 32Kx8 CMOS SRAM Common HO \ F E A T U R E S _ • Organization: 32,768 words x 8 bits • Completely static memory. No clocks or timing strobe required. • Equal access and cycle times


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    PDF 32Kx8 AS7C256 AS7C256L 32Kx8 28-pin 550mW AS7C256

    Untitled

    Abstract: No abstract text available
    Text: M 2 7 C 2 5 6 /E 2 7C 2 5 6 256 K CMOS EPROM March 1987 Features Description • 2 5 6 K 32K x S C M O S EPROM SEEQ'7C256 is the industry’s firs t 256KCMOS EPROM. lth a s a 3 2 K x 8 organization and has very low pow er dissipation. Its active current is less


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    PDF s27C256 256KCMOS MD400013/- 27C256

    AS7C256

    Abstract: 256x128x8 TI 344C
    Text: High Performance 32Kx8 CMOS SRAM II ^ L lh . 7C256 7C256L 32Kx8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE and OE inputs - 10/12/15/20/25/35 ns address access time


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    PDF 32Kx8 AS7C256 AS7C256L 28-pin 7C512 7C1024 32-pin 40-pin 256x128x8 TI 344C

    Untitled

    Abstract: No abstract text available
    Text: CMOS UV ERASABLE 262144-BIT READ ONLY MEMORY FU JITSU 7C256A-15 7C256A-17 7C256A-20 7C256A-25 S ep tem ber 1987 E d itio n 2.0 CMOS 262144 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C 256A is a high speed 262,144 bits com plem entary MOS


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    PDF 262144-BIT MBM27C256A-15 MBM27C256A-17 MBM27C256A-20 MBM27C256A-25 28-pin 32-pad

    C2565

    Abstract: eprom mtbf CERAMIC LEADLESS CHIP CARRIER CLCC 28 7C256 CY7C256 CLCC 64 pins footprint
    Text: mm ^ Yp p p c;q y SEMICONDUCTOR Features 7C256 PR ELIM IN AR Y =—" ' " - 32K x 8 PROM Power Switched and Reprogrammable • Capable o f w ithstanding > 2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability Functional Description


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    PDF CY7C256 768-word 600-mil T-90-20 C2565 eprom mtbf CERAMIC LEADLESS CHIP CARRIER CLCC 28 7C256 CLCC 64 pins footprint

    Untitled

    Abstract: No abstract text available
    Text: • bcîMTûSS 0022^50 4 fl□ ■ M I T I MITSUBISHI LSIs 7C256AK-85, -10 2 6 2 1 4 4 -B IT 3 2 7 6 8 - WORD BY 8 -B IT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2 6 2 1 4 4 -b it ultraviolet erasable and electrically reprogram­ mable read only memory. It is suitable for microprocessor


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    PDF M5M27C256AK-85,

    AS7C256-15PC

    Abstract: TSOP 8x14 AS7C256-20JC AS7C256-20PC 32KX8 7C256-15 8X13 AS7C256-10JC AS7C256-12PC 7C512
    Text: H ig h P e r fo r m a n c e 32K X 8 C M O S SR A M _ I I A S 7 C 2 56 3 2 K x 8 C M O S SR A M C o m m o n I / O Features • O r g a n iz a tio n : 3 2 ,7 6 8 w o r d s x 8 b its • H ig h s p e e d • T T L -c o m p a tib le , th re e-sta te I / O


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    PDF 32KX8 28-pin 7C512 7C1024 AS7C256-15PC AS7C256-20PC AS7C256-12PC AS7C256-10JC AS7C2S6-12JC AS7C256-15PC TSOP 8x14 AS7C256-20JC AS7C256-20PC 7C256-15 8X13 AS7C256-10JC AS7C256-12PC

    C2565

    Abstract: CY7C256-55LMB C2563 CY7C256 7C256 C2564
    Text: mm ^Ypppc;q y SEMICONDUCTOR Features 7C256 PR ELIM IN AR Y =— " ' " - 32K x 8 PROM Power Switched and Reprogrammable • Capable o f w ithstanding > 2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability Functional Description


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    PDF CY7C256 CY7C256 768-word 600-mil CY7C256-55DMB 28-Lead 600-Mil) CY7C256â C2565 CY7C256-55LMB C2563 7C256 C2564

    Untitled

    Abstract: No abstract text available
    Text: AS7C512 5V 6 4K x8 C M O S SRAM Features • O rganization: 6 5 ,5 3 6 w ords X 8 bits • H igh speed - 1 5 /2 0 /2 5 ns address access tim e - 4 / 5 / 6 ns o utput enable access tim e • Low po w er consum ption - Active: 632 m W m ax 15 ns cycle - Standby: 27.5 m W max, CMOS I/O


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    PDF AS7C512 7C256 7C1024 1DD344

    AS7C256

    Abstract: AS7C256L
    Text: II II High Performance 32Kx8 CMOS SRAM 7C256 7C256L 32Kx8 CMOS SRAM Common I/O \ F E A T U R E S _ • Organization: 32,768 words x 8 bits • Completely static memory. No clocks or timing strobe required. •


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    PDF AS7C256 32Kx8 AS7C256L 550mW 28-pin AS7C256 AS7C256L