TA17424
Abstract: AN7254 AN7260 RFM7N35 RFM7N40 RFP7N35 RFP7N40 TB334
Text: RFM7N35, RFM7N40, RFP7N35, RFP7N40 Semiconductor 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A, 350V and 400V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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RFM7N35,
RFM7N40,
RFP7N35,
RFP7N40
TA17424.
AN7254
AN7260.
TA17424
AN7260
RFM7N35
RFM7N40
RFP7N35
RFP7N40
TB334
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darlingtion transistor 2 amp
Abstract: TIP150 NPN Transistor 50A 400V
Text: Transistor Features: • Collector-Emitter Sustaining Voltage VCEC SUS = 30V (Minimum) • Collector-Emitter Saturation Voltage VCE (sat) = 2.0V (Maximum) at IC = 5.0 A • Reverse-Base SOA - 300V to 400V at 7A Dimensions Minimum Maximum A 14.68 15.31 B
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TIP150
O-220
darlingtion transistor 2 amp
TIP150
NPN Transistor 50A 400V
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NTE2638
Abstract: No abstract text available
Text: NTE2638 Silicon NPN Transistor Darlington Features: D High Voltage, High Forward and Clamped Reverse Energy D 10A Peak Collector Current D 80W at +25°C Case Temperature D Collector–Emitter Sustaining Voltage: 400V Min at 7A Absolute Maximum Ratings: TC = +25°C unless otherwise specifieid
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NTE2638
250mA,
NTE2638
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Dow Corning DC 11
Abstract: NTE2638 npn darlington 400v 1.*a
Text: NTE2638 Silicon NPN Transistor Darlington Features: D High Voltage, High Forward and Clamped Reverse Energy D 10A Peak Collector Current D 80W at +25°C Case Temperature D Collector−Emitter Sustaining Voltage: 400V Min at 7A Absolute Maximum Ratings: TC = +25°C unless otherwise specifieid
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NTE2638
250mA
-250mA,
250mA,
250mA
Dow Corning DC 11
NTE2638
npn darlington 400v 1.*a
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N40 Preliminary Power MOSFET 7A, 400V N-CHANNEL POWER MOSFET 1 The UTC 7N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
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O-220
O-220F1
QW-R502-551
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IRGS14B40L
Abstract: IRGS14 IC100
Text: IRGS14B40L PROVISIONAL INSULATED GATE BIPOLAR TRANSISTOR 14A, Voltage Clamped 400V IGBT Co l l ect o r G at e Rg Rg e D 2 P ak Em it te r MIN TYP MAX UNITS CONDITIONS VCL COLLECTOR - EMITTER CLAMPING VOLTAGE 370 400 430 V RG =1 kOhm , Ic =7A VECAV EMITTER - COLLECTOR AVALANCHE VOLTAGE
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IRGS14B40L
-10mA,
IC100
IRGS14B40L
IRGS14
IC100
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MQBQ-270-28B
Abstract: No abstract text available
Text: MQBQ-270-28B Single Output H igh R eliability DC-DC C onverter 230-400V 155-450V 28V 400W 95%@7A / 95%@14A Continuous Input Transient Input Output Output Efficiency O peration : -55ºC to The MilQor series of high-reliability DC-DC converters +125ºC brings SynQor's field proven high-efficiency synchronous
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MQBQ-270-28B
30-400V
55-450V
MQBQ-270-28B
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RTCA DO-160
Abstract: No abstract text available
Text: MQBQ-270-28B Single Output H igh R eliability DC-DC C onverter 155-450V 28V 400W 94.6%@7A / 95.4%@14A Continuous Input Transient Input Output Output Efficiency a pu d bl va ic n at ce io d n 230-400V O peration : -55ºC to The MilQor series of high-reliability DC-DC converters
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MQBQ-270-28B
30-400V
55-450V
MQBQ-270-28B
RTCA DO-160
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Untitled
Abstract: No abstract text available
Text: S2306 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 160mW ID 22A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode
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S2306
160mW
R1102B
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Untitled
Abstract: No abstract text available
Text: SCT2160KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 160mW ID 22A PD 165W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode
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SCT2160KE
160mW
O-247
R1102B
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zvs flyback driver
Abstract: APT15F60B APT15F60S MIC4452
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
APT-8172
zvs flyback driver
APT15F60B
APT15F60S
MIC4452
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Untitled
Abstract: No abstract text available
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET TO POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
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Untitled
Abstract: No abstract text available
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
APT15F60B
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APT15F60B
Abstract: APT15F60S MIC4452
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
APT-8172
APT15F60B
APT15F60S
MIC4452
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K06N60
Abstract: SKB02N60 200v 1.5v 3a diode 400v 3a low vf diode
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKB02N60
P-TO-220-3-45
K06N60
SKB02N60
200v 1.5v 3a diode
400v 3a low vf diode
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Untitled
Abstract: No abstract text available
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKB02N60
SKB02N60
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Untitled
Abstract: No abstract text available
Text: RFM7N35, RFM7N40, RFP7N35, RFP7N40 HARRIS S E M I C O N D U C T O R 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs July 1998 Description Features 7A, 350V and 400V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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PDF
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RFM7N35,
RFM7N40,
RFP7N35,
RFP7N40
TA17424.
AN7254
AN7260.
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IRFP440R
Abstract: cd3232 IRFP441R IRFP442R IRFP443R ir441
Text: Rugged Power M OSFETs_ IRFP440R, IRFP441R, IRFP442R, IRFP443R File Number 2089 Avalanche Energy Rated N-Channel Power MOSFETs 8A and 7A, 500V-400V rDs on = 0 .8 5 0 and 1 .1 0 N-CHANNEL ENHANCEMENT MODE D Features: • ■ ■ ■
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IRFP440R,
IRFP441R,
IRFP442R,
IRFP443R
00V-400V
92CS-426S0
IRFP442R
IRFP443R
IRFP440R
cd3232
IRFP441R
ir441
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C25P-FR
Abstract: C25P40F 662A C25P30F C25P30FR C25P40FR C25P40
Text: C25P30F C25P40F C25P30FR C25P40FR 27. 7A / 300~ 400V / t r r : 60nsec FAST RECOVERY DIODE 5.31.209 4.71.185) FEATU R ES 15.91626) I °Similar to TO-247AC TO-3P) Case r 15.31602^ 3 .6 (.1 4 2 ) TN. « 3 .4 (.1 3 4 j 5 .7I.224) m ° Dual Diodes - Cathode Common and
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A/300
00V/trr
60nsec
C25P30F
C25P40F
C25P30FR
C25P40FR
O-247AC
2C126)
8C031)
C25P-FR
662A
C25P40FR
C25P40
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IRF840R
Abstract: RF840 IRF840 IRF841R IRF842R IRF843R M2R DIODE
Text: Rugged Power MOSFETs IRF840R, IRF841R IRF842R, IRF843R File N u m b er 2034 Avalanche Energy Rated N-Channel Power MOSFETs 8A and 7A, 500V-400V rDs on = 0.850 and 1.10 TE R M IN A L DIAGRAM Features: • ■ ■ ■ ■ Single pulse avalanche energy rated
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IRF840R,
IRF841R
IRF842R,
IRF843R
00V-400V
IRF841R,
IRF842R
IRF843R
92CS-42659
IRF840R
RF840
IRF840
M2R DIODE
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IRF4431
Abstract: IRF44 IRF442R IRF 426 441F IRF440R IRF441R IRF443R RF440 rf44
Text: _Rugged Power MOSFETs File N u m b er 2007 IRF440R, IRF441R, IRF442R, IRF443R Avalanche Energy Rated N-Channel Power MOSFETs 8A a nd 7A, 500V-400V rDs on = 0 .8 5 f) and 1 .1 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated
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IRF440R,
IRF441R,
IRF442R,
IRF443R
00V-400V
IRF442R
IRF443R
MCS-42S9Â
IRF4431
IRF44
IRF 426
441F
IRF440R
IRF441R
RF440
rf44
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BASIC digital multimeter diagram
Abstract: PKM24-4A0 38D8R02H 5 VOLT piezo beeper 4MC2 harris volt meter digital multimeter icl7139
Text: h S E M aI C O r N Dr U Ci T sO R æ Im C L m m 7 1m 3 m 9 w , Features • 18 R a n g e s -IC L 7 1 49 4 2 4 4 4 C L 7a ^ m 1* 4 * 9 Description 13 R a n g e s - ICL7139 - 4 DC Voltage 400mV, 4 V, 40V, 400V - 1 AC Voltage 400V - 4 DC Current 4mA, 40mA, 400mA, 4A
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ICL7139
ICL7149
400mA
1-800-4-HARRIS
BASIC digital multimeter diagram
PKM24-4A0
38D8R02H
5 VOLT piezo beeper
4MC2
harris volt meter
digital multimeter icl7139
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diode 1000V 10a
Abstract: 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
Text: Power Devices High Speed, M edium Voltage Transistors in o r d e r o f c u rr e n t rating VCE (sat) max. at le max. at Iq Package Outline •cfDO*1* v CBO v CEO BU 406 BU407 TO-220AB 7A 400V 300V 200V 100V 1V at 5A 750ns at 5A BUV28 BUV28A TO-220AB 12A
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O-220AB
O-220AB
750ns
BU407
BUV28
BUV28A
BUV27
BUV27A
diode 1000V 10a
200v 1.5v 3a diode
TO-220aB 11A
diode 6A 1000v
DIODE 2A 400V
TO-220aB rr
4045AV
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D1F40
Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
Text: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A
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2SA1796
2SC4668
2SC4669
2SK1194
2SK1672
2SK1533
2SK1195
D1F10
D2F10
D1F20
D1F40
S1ZB40
200v 10A mosfet
diode 2f
DIODE D1F20
S1ZA40
diode rm 62
mosfet 600V 30A
S1WB S 40 68
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