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    7C102 Search Results

    7C102 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    DO1607C-102 C Coilcraft Inc OBSOLETE when inventory is depleted. Power inductor, 20% tol, SMT, RoHS Visit Coilcraft Inc Buy
    DO1607C-102 B Coilcraft Inc OBSOLETE when inventory is depleted. Power inductor, 20% tol, SMT, RoHS Visit Coilcraft Inc Buy
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    7C102 Price and Stock

    KEMET Corporation C317C102J1G5TA7301

    CAP CER 1000PF 100V C0G/NP0 RAD
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    DigiKey C317C102J1G5TA7301 Cut Tape 10,170 1
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    C317C102J1G5TA7301 Reel 7,500 2,500
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    TTI C317C102J1G5TA7301 Reel 15,000 2,500
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    KEMET Corporation C317C102M1U5TA

    CAP CER 1000PF 100V Z5U RADIAL
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    DigiKey C317C102M1U5TA Bulk 3,430 1
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    Infineon Technologies AG CY7C1020DV33-10ZSXI

    IC SRAM 512KBIT PAR 44TSOP II
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    DigiKey CY7C1020DV33-10ZSXI Tray 1,488 1
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    Newark CY7C1020DV33-10ZSXI Bulk 226 1
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    Chip1Stop CY7C1020DV33-10ZSXI Tray 276
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    New Advantage Corporation CY7C1020DV33-10ZSXI 270 1
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    KEMET Corporation C317C102G1G5TA

    CAP CER 1000PF 2% 100V C0G RAD
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    DigiKey C317C102G1G5TA Bulk 1,440 1
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    Infineon Technologies AG CY7C1021DV33-10VXI

    IC SRAM 1MBIT PARALLEL 44SOJ
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    DigiKey CY7C1021DV33-10VXI Tube 538 1
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    7C102 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    7C1024 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    7C1028 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    7C102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C1021

    Abstract: 7c1021
    Text: 7c1021: March 31, 1995 Revised: June 25, 1996 ADVANCED INFORMATION 7C1021 64K x 16 Static RAM Features D Functional Description The 7C1021 is a highĆperformance CMOS static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW chip enable


    Original     		PDF 7c1021: CY7C1021 CY7C1021 I/O15) I/O15 7C1021-12 7C1021-15 7C1021-20 7c1021

    AS7C1024

    Abstract: AL205 AS7C31024 IN317
    Text: Hi gh Per for m an ce 128K 128 K x8 C M OS S R A M A S 7C1024 A S 7C31024 1288K ×8 CMOS S R A M 12 Features • Organization: 131,072 words × 8 bits • High speed - 10/12/15/20 ns address access time - 3/3/4/5 ns output enable access time • Low power consumption


    Original     		PDF 7C1024 7C31024 32-pin 7C512 AS7C1024 AL205 AS7C31024 IN317

    7C1024

    Abstract: No abstract text available
    Text:  $6& 9.ð&02665$0 &RPPRQ,2 HDWXUHV • TTL-compatible, three-state I/O • 28-pin JEDEC standard packages - 300 mil PDIP and SOJ Socket compatible with 7C512 and 7C1024 - 8x13.4 TSOP • ESD protection ≥ 2000 volts • Latch-up current ≥ 200 mA


    Original     		PDF 28-pin 7C512 7C1024 AS7C256-12PC AS7C256-15PC AS7C256-20PC AS7C256-10JC AS7C256-12JC AS7C256-12JI AS7C256-15JC 7C1024

    CY7C1022

    Abstract: No abstract text available
    Text: Y7C10 PRELIMINARY 7C1022 32K x 16 Static RAM Features • 5.0V operation ± 10% • High speed — tAA = 12 ns • Low active power — 825 mW (max., 10 ns, “L” version) • Very Low standby power — 500 µW (max., “L” version) • Automatic power-down when deselected


    Original     		PDF Y7C10 CY7C1022 400-mil CY7C1022

    CY7C1020

    Abstract: No abstract text available
    Text: Y7C10 PRELIMINARY 7C1020 32K x 16 Static RAM Features BLE is LOW, then data from I/O pins (I/O 1 through I/O8), is written into the location specified on the address pins (A0 through A 14). If byte high enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A14).


    Original     		PDF Y7C10 CY7C1020 I/O16) 44-pin 400-mil 44-Lead 400-Mil) CY7C1020-15ZC 44-Lead CY7C1020L-15ZC CY7C1020

    ATPA

    Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C


    Original     		PDF CY2147-35C CY7C147-35C CY7C147-45C CY91L22-35C CY7C122-35C CY2147-45C CY7C148-35C CY7C148-25C+ ATPA 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c

    550mi

    Abstract: No abstract text available
    Text: 7c1021: March 31,1995 Revised: June 25,1996 7C1021 64K x 16 Static RAM ADVANCED INFORMATION Features Functional Description The 7C1021 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW chip enable


    OCR Scan     		PDF 7c1021: 550-mil CY7C1021 I/O13 I/O10 7C1021--12 7C1021--15 7C1021--20 550mi

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CYPRESS SEMICONDUCTOR Functional Description • High speed T he C Y 7C101A and CY 7C102A are highperform ance C M O S static R A M s orga­ nized as 262,144 x 4 bits with separate I/O. Easy m em ory expansion is provided by ac­ tive LO W chip enable C E and threestate drivers. B oth devices have an a u to ­


    OCR Scan     		PDF CY7C101A CY7C102A 7C101A) 7C101A 7C102A

    27C102JK

    Abstract: No abstract text available
    Text: M ITSUBISHI LSIs M5M2 7C102K, -12, -15, -2/ M 5M 7C102JK -1 2 ,-1 5 ,-2 1 0 4 8 5 7 6 -B IT 6 5 5 3 6 -W O R D BY 1 6 -B IT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION T h e M itsub ishi M 5 M 2 7 C 1 0 2 K , J K is a high-speed 1 0 4 8 5 7 6 -


    OCR Scan     		PDF 7C102K, M5M27C102JK 27C102JK

    AS7C512-20JC

    Abstract: AS7C512-15PC VLN 2003 7C256 AS7C512
    Text: AS7C512 5V 64K x8 CMOS SRAM 1Equal access and cycle tim es 1Easy m em ory expansion w ith CE1, CE2, OE inputs 1TTL-compatible, three-state I/O - 3 2-pin JEDEC standard packages - 300 m il PDIP and SOJ Socket com patible w ith 7C256 and 7C1024 1ESD p rotection > 2000 volts


    OCR Scan     		PDF AS7C512 64Kx8 7C256 7C1024 256x256x8 TQ0344R AS7C512-20JC AS7C512-15PC VLN 2003

    Untitled

    Abstract: No abstract text available
    Text: CY7C101A 7C102A PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed T he C Y 7C101A and CY 7C102A are highp erform ance C M O S static R A M s orga­ nized as 262,144 x 4 bits w ith separate I/O . Easy m em ory expansion is provided by ac­


    OCR Scan     		PDF CY7C101A CY7C102A 7C101A 7C102A 7C101A)

    M5M27C102jk

    Abstract: 27C102K M5M27C102K-15 M5M27C102K-12 JK-15
    Text: MITSUBISHI LSIs M5M2 7C102K, -12, -15,-2/ 7C102JK -12,-15,-2 1 0 4 8 5 7 6 -B IT 6 5 5 3 6 -W O R D BY 1 6 -B IT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION The Mitsubishi M 5M 7C102K, J K is a high-speed 1048576- PIN C O N FIG U RATIO N (TOP V IEW )


    OCR Scan     		PDF 7C102K, M5M27C102JK 27C102K, 1048576bit M5M27C102K, 27C102K M5M27C102K-15 M5M27C102K-12 JK-15

    CY7C101A

    Abstract: CY7C102A 7C101A-12 l3lx
    Text: PRELIMINARY 9 / C Y PR E SS CY7C101A 7C102A 256K x 4 Static RAM with Separate I/O Features Functional Description • High speed The CY7C101A and 7C102A are high­ perform ance CMOS static RAM s orga­ nized as 262,144 x 4 bits with separate I/O. Easy m emory expansion is p rovided by ac­


    OCR Scan     		PDF CY7C101A CY7C102A 7C101A) CY7C102A CY7C101A tdwel161 7C101A 8-00231-A 7C101A-12 l3lx

    Untitled

    Abstract: No abstract text available
    Text: Hij>h P e r f o r m, u h r AS7CI026 A » 64Kxl ' H C M O S SR AM AS7CÎI026 6 I k x If, CMOS NK'UI Preliminary information • O rg a n iz a tio n : 6 5 ,5 3 6 w o rd s x 16 bits • T T L - c o m p a tib le , three-state I / O • H ig h speed • 4 4 - p in JE D E C standard p ackage


    OCR Scan     		PDF 64Kxl( AS7CI026 026-25TC AS7C1026-20TC \S7C1026

    Untitled

    Abstract: No abstract text available
    Text: High Performance 128Kx8 C M O S SRAM p i 7C1024 7C1024L 128Kx8 CM O S S RAM Common I/O FEATURES • Organization: 131,072 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE1, CE2, OE inputs - 10/12/15/20/25/35 ns address access time


    OCR Scan     		PDF 128Kx8 AS7C1024 AS7C1024L 128Kx8 32-pin 7C256 7C512

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1075 7C1020V _ Features 32Kx 16 Static RAM BLE is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (Aq through A 1 4 ). If byte high enable (BHE) is LOW, then data from I/O pins (l/Og through l/0-|6) is written into the location speci­


    OCR Scan     		PDF CY7C1020V

    Untitled

    Abstract: No abstract text available
    Text: 7C101A: 11-25-91 Revision: Thursday, February 18,1993 CY7C101A 7C102A k ' Vwt S3 « 3 PRELIMINARY 7J= CYPRESS SEMICONDUCTOR 256K x 4 Static RAM with Separate I/O Features Functional Description • Highspeed — tAA = 12 ns • Transparent write 7C101A


    OCR Scan     		PDF 7C101A: CY7C101A CY7C102A 7C101A) CY7C101Aand CY7C102Aare in982.

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 7C1020 3 2 K x 16 Static RAM Features BLE is LOW, then data from I/O pins <l/0-| through l/0 8), is written into the location specified on the address pins (A0 through A14). If byte high enable (BHE) is LOW, then data from I/O pins (l/09 through l/0 16) is written into the location speci­


    OCR Scan     		PDF CY7C1020 44-pin 400-mil

    Untitled

    Abstract: No abstract text available
    Text: High Performance 32Kx8 CMOS SRAM p i AS7C256 AS7C256L 32Kx8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words x 8 bits Equal access and cycle times • High speed Easy memory expansion with CE and OE inputs - 10/12/15/20/25/35 ns address access time


    OCR Scan     		PDF 32Kx8 AS7C256 AS7C256L 32Kx8 28-pin 7C512 7C1024 versio-9177

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1083 C 'i- PRELIMINARY 7C1021V30 64K Features X 16 Static RAM Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BEE) is LOW, then data from I/O pins (l/Oi through l/0 8), is written into the location specified on the address pins (A0


    OCR Scan     		PDF CY7C1021V30

    Untitled

    Abstract: No abstract text available
    Text: 7C1021 P Yi. PX :V«*1 64K x 16 Static RAM BLE is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (A0 through A i5). If byte high enable (BHE) is LOW, then data from I/O pins (l/Og through I/0 1 6) is written into the location speci­


    OCR Scan     		PDF CY7C1021

    7C1024

    Abstract: AS7C256
    Text: AS7C256 5V 32K •8 CMOS SRAAA /Common I OV Features • O rganization: 3 2 ,7 6 8 w ords X 8 bits • H igh speed - 1 0 /1 2 /1 5 / 2 0 ns address access tim e - 3 / 3 / 4 / 5 ns o utput enable access tim e • Low pow er consum ption - Active: 660 m W m ax 10 ns cycle


    OCR Scan     		PDF AS7C256 7C512 7C1024 1DD344 AS7C256

    Untitled

    Abstract: No abstract text available
    Text: H ig h P erfo rm a n ce 32K X8 CMOS SRAM AS7C.256 AS7C 256L A 32KX8 CMOS SRAM Common I/O • Organization: 32,768 words x 8 bits •H ig h sp eed - 1 0 /1 2 /1 5 /2 0 /2 5 /3 5 ns address access time - 3 / 3 / 4 / 5 / 6 /8 ns output enable access time • Low power consumption


    OCR Scan     		PDF 32KX8 7C512 7C1024 AS7C256 S7C256L-20SC AS7C256L-2SSC AS7C256L-35SC S7C2S6-12TC S7C256-15TC S7C256-20TC

    Untitled

    Abstract: No abstract text available
    Text: High Performance 128KX8 CMOS SRAM 7C1024 AS7C31024 128KX8 CMOS SRAM Features • Organization: 131,072 words x 8 bits • High speed - 1 0 / 1 2 / 1 5 / 2 0 / 2 5 ns address access time - 3 / 3 / 4 / 5 / 6 ns output enable access time • Low power consumption


    OCR Scan     		PDF 128KX8 AS7C1024 AS7C31024 128KX8 7C512 1003MIH DDDDM13