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    7C1046 Search Results

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    7C1046 Price and Stock

    Flip Electronics CY7C1046D-10VXI

    IC SRAM 4MBIT PARALLEL 32SOJ
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    DigiKey CY7C1046D-10VXI Tube 100
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    Infineon Technologies AG CY7C1046D-10VXIT

    IC SRAM 4MBIT PARALLEL 32SOJ
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    DigiKey CY7C1046D-10VXIT Reel
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    Rochester Electronics LLC CY7C1046BV33-12VC

    IC SRAM 4MBIT PARALLEL 32SOJ
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    DigiKey CY7C1046BV33-12VC Bulk 40
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    Rochester Electronics LLC CY7C1046CV33-12VC

    IC SRAM 4MBIT PARALLEL 32SOJ
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    DigiKey CY7C1046CV33-12VC Bulk 137
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    Rochester Electronics LLC CY7C1046CV33-10VC

    IC SRAM 4MBIT PARALLEL 32SOJ
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    DigiKey CY7C1046CV33-10VC Bulk 130
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    7C1046 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C1046BV33

    Abstract: CY7C1046BV33-10VC CY7C1046BV33-12VC CY7C1046BV33-15VC
    Text: 046BV33 PRELIMINARY 7C1046BV33 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power for 10 ns speed — 540 mW max. • Low CMOS standby power (L version) — 1.8 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected


    Original     		PDF 046BV33 CY7C1046BV33 CY7C1046BV33 CY7C1046BV33-10VC CY7C1046BV33-12VC CY7C1046BV33-15VC

    Untitled

    Abstract: No abstract text available
    Text: 7C1046D 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features Functional Description The 7C1046D[1] is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW


    Original     		PDF CY7C1046D CY7C1046D

    CY7C1046BV33

    Abstract: CY7C1046BV33-10VC CY7C1046BV33-12VC CY7C1046BV33-15VC
    Text: 33 PRELIMINARY 7C1046BV33 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power for 10 ns speed — 540 mW max. • Low CMOS standby power (L version) — 1.8 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected


    Original     		PDF CY7C1046BV33 CY7C1046BV33 CY7C1046BV33-10VC CY7C1046BV33-12VC CY7C1046BV33-15VC

    CY7C1046V33

    Abstract: CY7C1046V33-12VC CY7C1046V33-15VC
    Text: 3 ADVANCE INFORMATION 7C1046V33 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power for 10 ns speed — 540 mW max. • Low CMOS standby power (L version) — 1.8 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention)


    Original     		PDF CY7C1046V33 CY7C1046V33 CY7C1046V33-12VC CY7C1046V33-15VC

    CY7C1046

    Abstract: 7c1046
    Text: ADVANCED INFORMATION 7C1046 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1018 mW max. • Low CMOS standby power(L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected


    Original     		PDF CY7C1046 CY7C1046 7c1046

    Untitled

    Abstract: No abstract text available
    Text: 7C1046D 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with 7C1046B • High speed — tAA = 10 ns • CMOS for optimum speed/power • Low active power — ICC = 90 mA @ 10 ns • Low CMOS Standby Power


    Original     		PDF CY7C1046D CY7C1046B 400-mil-wide 32-pin CY7C1046D

    CY7C1046B

    Abstract: CY7C1046B-12VC CY7C1046B-15VC CY7C1046B-20VC
    Text: 7C1046B 7C1046B 1M x 4 Static RAM Features • High speed — tAA = 12 ns • Low active power — 935 mW max. • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected


    Original     		PDF 1CY7C1046B CY7C1046B CY7C1046B CY7C1046B-12VC CY7C1046B-15VC CY7C1046B-20VC

    CY7C1046D-10VXI

    Abstract: V324 CY7C1046B CY7C1046D
    Text: 7C1046D 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with 7C1046B • High speed — tAA = 10 ns • CMOS for optimum speed/power • Low active power — ICC = 90 mA @ 10 ns • Low CMOS Standby Power


    Original     		PDF CY7C1046D CY7C1046B CY7C1046D CY7C1046D-10VXI V324 CY7C1046B

    CY7C1046B

    Abstract: CY7C1046B-12VC CY7C1046B-15VC CY7C1046B-20VC 046b
    Text: 046B 7C1046B 1M x 4 Static RAM Features • High speed — tAA = 12 ns • Low active power — 935 mW max. • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected


    Original     		PDF CY7C1046B CY7C1046B CY7C1046B-12VC CY7C1046B-15VC CY7C1046B-20VC 046b

    CY7C1046BV33

    Abstract: CY7C1046BV33-10VC CY7C1046BV33-12VC CY7C1046BV33-15VC
    Text: 046BV33 PRELIMINARY 7C1046BV33 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power for 10 ns speed — 540 mW max. • Low CMOS standby power (L version) — 1.8 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected


    Original     		PDF 046BV33 CY7C1046BV33 CY7C1046BV33 CY7C1046BV33-10VC CY7C1046BV33-12VC CY7C1046BV33-15VC

    Untitled

    Abstract: No abstract text available
    Text: 7C1046D 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features Functional Description • Pin- and function-compatible with 7C1046B The 7C1046D is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is


    Original     		PDF CY7C1046D CY7C1046D

    CY7C1046B-15VC

    Abstract: CY7C1046B CY7C1046B-12VC
    Text: ADVANCE INFORMATION 7C1046B 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1018 mW max. • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected


    Original     		PDF CY7C1046B CY7C1046B CY7C1046B-15VC CY7C1046B-12VC

    V324

    Abstract: CY7C1046B CY7C1046D CY7C1046D-10VXI
    Text: 7C1046D 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with 7C1046B • High speed — tAA = 10 ns • CMOS for optimum speed/power • Low active power — ICC = 90 mA @ 10 ns • Low CMOS Standby Power


    Original     		PDF CY7C1046D CY7C1046B CY7C1046D V324 CY7C1046B CY7C1046D-10VXI

    1046B-2

    Abstract: 1046b8
    Text: 7C1046BN 1M x 4 Static RAM Features You write to the device by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the four IO pins (IO0 through IO3) is then written into the location specified on the address pins (A0 through A19). • Low active power


    Original     		PDF CY7C1046BN 32-pin CY7C1046BN 1046B-2 1046b8

    Untitled

    Abstract: No abstract text available
    Text: 7C1046D 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable


    Original     		PDF CY7C1046D CY7C1046B

    4946

    Abstract: CY7C1041B CY7C1046B CY7C1049B JESD22 MIL-STD-883 PRESSURE COOKER
    Text: Cypress Semiconductor Product/Technology Qualification Report QTP# 000301 VERSION 1.0 May, 2000 4 Meg Asynchronous RAM R52D-5R Technology, Fab 4 CY7C1041B 256K x 16 Static RAM 7C1046B 1M x 4 Static RAM CY7C1049B 512K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:


    Original     		PDF R52D-5R CY7C1041B CY7C1046B CY7C1049B CY7C149B CY7C1049B-VC 4946 CY7C1041B CY7C1046B CY7C1049B JESD22 MIL-STD-883 PRESSURE COOKER

    CY7C1046BN

    Abstract: CY7C1046BN-15VC
    Text: 7C1046BN 1M x 4 Static RAM Features You write to the device by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the four IO pins (IO0 through IO3) is then written into the location specified on the address pins (A0 through A19). • Low active power


    Original     		PDF CY7C1046BN 32-pin CY7C1046BN CY7C1046BN-15VC

    CY7C1046B

    Abstract: CY7C1046B-12VC CY7C1046B-15VC CY7C1046B-20VC
    Text: 046B 7C1046B 1M x 4 Static RAM Features • High speed — tAA = 12 ns • Low active power — 935 mW max. • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected


    Original     		PDF CY7C1046B CY7C1046B CY7C1046B-12VC CY7C1046B-15VC CY7C1046B-20VC

    Untitled

    Abstract: No abstract text available
    Text: V CYPRESS 1M x 4 Static RAM Features sion is provided by an active LOW Chip Enable CE , an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the four I/O pins (I/Oq


    OCR Scan     		PDF CY7C1046V33