Untitled
Abstract: No abstract text available
Text: KM41 V4000DT CMOS DRAM ELECTRONICS 4 M X 1 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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V4000DT
KM41V4000DT
7Tb4142
003412b
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Untitled
Abstract: No abstract text available
Text: KM416V256DT CMOS D R A M ELECTRO NICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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KM416V256DT
256Kx16
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Untitled
Abstract: No abstract text available
Text: KM44C4000BK CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily ol 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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KM44C4000BK
16Mx4,
512Kx8)
7Tb4142
GG34404
7Tb4142
G344D5
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Untitled
Abstract: No abstract text available
Text: KM44C1004DT CMOS DR A M ELECTR O NICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM44C1004DT
512Kx8)
G0342S3
G034254
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KM41C1000CJ-6
Abstract: KM41C1000cJ-7 KM41C1000C-6 KM41C1000C-8 KM41C1000CP-6 KM41C1000CG-7 741i DRAM 18DIP km41c1000 KM41C1000CP-7
Text: SAMSUNG E L E C TRONICS INC b?E ]> • 7=îtim42 0G153Ö0 553 I SMGK KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its
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b4142
KM41C1000C
KM41C1000C-6
110ns
KM41C1000C-7
130ns
KM41C1000C-8
150ns
256Kx4
KM41C1000CJ-6
KM41C1000cJ-7
KM41C1000CP-6
KM41C1000CG-7
741i
DRAM 18DIP
km41c1000
KM41C1000CP-7
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C1204B
Abstract: No abstract text available
Text: KM416C1204BT ELECTRONICS CMOS DRAM 1 M x 1 6 B i t C M O S Dynamic H A M with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mod offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416C1204BT
16Bit
1Mx16
03042b
C1204B
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ks57c2016
Abstract: samsung KS57C2016 sequential timer working
Text: KS57C2016 C l C i* ELECTRONICS Microcontroller DESCRIPTION The KS57C2016 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With an up-to-20-digit LCD direct-drive capability and up to 40 pins for LCD segment data output, a versatile 16-bit
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KS57C2016
KS57C2016
up-to-20-digit
16-bit
20-digit
40-segment
0011B;
0000B.
1001B,
samsung KS57C2016
sequential timer working
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pj 86 diode
Abstract: pj 54 diode 60v 10a p type mosfet diode 4j T02202 RS DT 27 DIODE PJ 63 diode RS-242
Text: IRFZ14A A d va n ce d Power MOSFET FEATURES BVDss = 60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 10 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175* «Operating Temperature
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IRFZ14A
O-220
30-oto
T0-220
003b32fl
3b32ti
O-220
500MIN
DD3b33D
pj 86 diode
pj 54 diode
60v 10a p type mosfet
diode 4j
T02202
RS DT 27 DIODE
PJ 63 diode
RS-242
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