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    7ESD Search Results

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    7ESD Price and Stock

    Infineon Technologies AG BGB741L7ESDE6327XTSA1

    IC AMP CELL 50MHZ-3.5GHZ TSLP7-1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BGB741L7ESDE6327XTSA1 Digi-Reel 45,620 1
    • 1 $1.26
    • 10 $0.962
    • 100 $0.7463
    • 1000 $0.60103
    • 10000 $0.60103
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    BGB741L7ESDE6327XTSA1 Cut Tape 45,620 1
    • 1 $1.26
    • 10 $0.962
    • 100 $0.7463
    • 1000 $0.60103
    • 10000 $0.60103
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    BGB741L7ESDE6327XTSA1 Reel 45,000 7,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.51616
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    Newark BGB741L7ESDE6327XTSA1 Cut Tape 14,592 1
    • 1 $1.27
    • 10 $1.12
    • 100 $0.888
    • 1000 $0.543
    • 10000 $0.543
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    NexGen Digital BGB741L7ESDE6327XTSA1 2,000
    • 1 -
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    • 100 -
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    • 10000 -
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    Chip1Stop BGB741L7ESDE6327XTSA1 Cut Tape 7,495
    • 1 -
    • 10 $0.785
    • 100 $0.616
    • 1000 $0.507
    • 10000 $0.484
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    EBV Elektronik BGB741L7ESDE6327XTSA1 24 Weeks 7,500
    • 1 -
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    • 10000 -
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    Win Source Electronics BGB741L7ESDE6327XTSA1 7,650
    • 1 -
    • 10 -
    • 100 $0.9072
    • 1000 $0.7024
    • 10000 $0.7024
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    Infineon Technologies AG BGB707L7ESDE6327XTSA1

    IC RF AMP 802.11A/B/G/N TSLP7-1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BGB707L7ESDE6327XTSA1 Cut Tape 6,396 1
    • 1 $1.26
    • 10 $0.962
    • 100 $0.7463
    • 1000 $0.60103
    • 10000 $0.60103
    Buy Now
    BGB707L7ESDE6327XTSA1 Digi-Reel 6,396 1
    • 1 $1.26
    • 10 $0.962
    • 100 $0.7463
    • 1000 $0.60103
    • 10000 $0.60103
    Buy Now
    Mouser Electronics BGB707L7ESDE6327XTSA1 1,528
    • 1 $1.7
    • 10 $1.09
    • 100 $0.745
    • 1000 $0.556
    • 10000 $0.431
    Buy Now
    Newark BGB707L7ESDE6327XTSA1 Cut Tape 2,404 1
    • 1 $0.936
    • 10 $0.73
    • 100 $0.639
    • 1000 $0.589
    • 10000 $0.589
    Buy Now
    Chip1Stop BGB707L7ESDE6327XTSA1 Cut Tape 14,889
    • 1 -
    • 10 $0.36
    • 100 $0.358
    • 1000 $0.356
    • 10000 $0.356
    Buy Now
    EBV Elektronik BGB707L7ESDE6327XTSA1 24 Weeks 7,500
    • 1 -
    • 10 -
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    • 10000 -
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    Infineon Technologies AG BGB719N7ESDE6327XTMA1

    IC RF AMP FM 10MHZ-1GHZ TSNP7-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BGB719N7ESDE6327XTMA1 Cut Tape 2,321 1
    • 1 $0.72
    • 10 $0.567
    • 100 $0.4814
    • 1000 $0.43555
    • 10000 $0.43555
    Buy Now
    BGB719N7ESDE6327XTMA1 Digi-Reel 2,321 1
    • 1 $0.72
    • 10 $0.567
    • 100 $0.4814
    • 1000 $0.43555
    • 10000 $0.43555
    Buy Now
    Rochester Electronics BGB719N7ESDE6327XTMA1 38,657 1
    • 1 $0.375
    • 10 $0.375
    • 100 $0.3525
    • 1000 $0.3187
    • 10000 $0.3187
    Buy Now

    Excelta Corporation 197-ESD

    BRUSH SGL HEAD HOG/HORSEHAIR 1PC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 197-ESD Box 199 1
    • 1 $4.49
    • 10 $4.49
    • 100 $3.82033
    • 1000 $3.82033
    • 10000 $3.82033
    Buy Now
    Newark 197-ESD Bulk 1
    • 1 $5.97
    • 10 $5.97
    • 100 $4.88
    • 1000 $3.91
    • 10000 $3.91
    Buy Now
    TestEquity LLC 197-ESD 163
    • 1 $3.24
    • 10 $3.24
    • 100 $3.24
    • 1000 $3.24
    • 10000 $3.24
    Buy Now

    Elesa SPA 309477-ESD

    LV.A-ESD-C, ADJUSTABLE FEET, LEV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 309477-ESD Bag 6 1
    • 1 $30.73
    • 10 $30.73
    • 100 $30.73
    • 1000 $30.73
    • 10000 $30.73
    Buy Now

    7ESD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    what is technical report

    Abstract: TR17-1 BGB707L7ESD marking swp 9
    Text: B GB 707L 7ESD BGB707L 7ESD L N A Circui t with lo wQ I nduc to rs fo r 3. 3 G Hz-3 .8 GHz Wi MAX Applicati on s Technic al Rep ort T R 171 Revision: Rev. 1.0 Date: 16. December 2009 Author: Dr. Chih-I Lin RF and Protecti on Devi c es Edition 16. December 2009


    Original
    BGB707L BGB707L7 BGB707L7ESD TR171, TR171 what is technical report TR17-1 marking swp 9 PDF

    RF LNA 10 GHz

    Abstract: SDMB BGB707L7ESD marking swp 9
    Text: B GB 707L 7ESD BGB707L 7ESD L N A Circui t with lo wQ I nduc to rs fo r 2. 3 G Hz-2 .7 GHz W L A N / Wi M A X / S D M B A p p l i c a t i o n s Technic al Rep ort T R 170 Revision: Rev. 1.0 Date: 14. December 2009 Author: Dr. Chih-I Lin RF and Protecti on Devi c es


    Original
    BGB707L BGB707L7 TR170, TR170 BGB707L7ESD RF LNA 10 GHz SDMB marking swp 9 PDF

    2SA1279

    Abstract: 2SC3239 IC H 111
    Text: TOSHIBA -CDISCRETE/OPTOl ~5Í DË”! T D T 7ESD □□□7bt,D ñ J 9097250 T O S HIBA bbL C D I S C R E T E /O P T O 07660 - 2 3 - b9 2SC3239 S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS.


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    2SA1279 2SC3239 100X100x2mmAi 0X50X2 IC H 111 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H I B A -CDISCRETE/OPTOJ 9097250 TOSHIBA tfoÀìtìht D ^ | t O T 7ESD D O l L b ö T CDI S C R E T E / O P T O 99 D 16689 DT'S^-lj SEMICONDUCTOR T O S H I B A FIELD EFFECT T R A N SISTOR TECHNICAL DATA SILICON N C H A N N E L MOS TYPE 2 S K 5 2 6


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    100nA 10/in PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} TT DE| t 99D 17086 9097250 TOSHIBA DISCRETE/OPTO D T 7ESD 0D17Qflb fl | DT-'4\-a\ TLU Y I6 3 , TLU Y I64 GaAsP YELLOW LIGHT EMISSION 3. I mm DIAMETER(TI) FEATURES! . ULTRA-BRIGHT I . All Plastic Mold Type TLUY163 : Light Yellow Transparent Lens


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    0D17Qflb TLUY163 TLUY164 20inA lFa20mA TLDYX63 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA b7 {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO DeT | t O,î 7ESD ODPTETb 1 * D T 'O S 'O Q 67C 0 92 96 Silicon Epitaxial Planar Typei. 1N4608 Diode TENTATIVE Unit in ram COMMUNICATION A ND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.


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    1N4608 100mA 250mA 350mA 450mA 500mA 500mA, PDF

    SP9960

    Abstract: costas loop Biphase mark decoder ST7SS
    Text: PLESSEY SEMICONDUCTORS TS 7220513 » Ë | 7ESD513 ODDbSbG S | ~ P L E S S E Y SEMICONDUCTORS % S e m D T-7S-S? 95D 06560 E ^ c w X _PRELIMINARY INFORMATION PLEASE CH E C K FOR LA TE ST ISSUE SP9920 50MBIT M AN CH ESTER DECOD ER WITH IDLE C O D E D ETECT


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    7ESD513 SP9920 50MBIT SP9920 20M-50M SP9960 costas loop Biphase mark decoder ST7SS PDF

    Untitled

    Abstract: No abstract text available
    Text: "PLESSEY SEMICONDUCTORS TS D Ê| 7ESDS13 ODOb?aS 7 2 2 0 5 1 3 P L E S S E Y SEMIC O N D U C T O R S fl 95D 06725 PLESSEY V T-ÿér2!T PRELIMINARY INFORMATION Semiconductors. M V 6 1 9 0 2 1K x 9 DIPSTICK" FIFO The MV61902 is one of a new generation of RAM-based


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    7ESDS13 MV61902 10MHz MV61902s 2200mW PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA DISCRETE/OPTO 2SD1069 Sb DE | C1DC]7ESD 0 D D 7 Ö S S “’ ” V ö r —Ö785 5 Ö ? SILICON NPN DOUBLE DIFFUSED TYPE (PCT PROCESS) Unit in nun TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. la S M A X . w HIGH VOLTAGE SWITCHING APPLICATIONS.


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    2SD1069 1000s PDF

    C10C equivalent

    Abstract: 2SD1069 AC75 C10C
    Text: 9097250 TOSHIBA DE | C10C]7ESD 0007055 1 Sh TOSHIBA O I S C R E T E / O P T O > <D IS C R E T E / O P T O 2SD1069 0 7"~ 3 3 -// 5bZ~ÖTB5 5 SILICON NPN DOUBLE DIFFUSED TYPE PCT PROCESS) Unit in nun TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. 1Q.3MAX.


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    2SD1069 C10C equivalent 2SD1069 AC75 C10C PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOJ Ti □ □ 1 7 4 Sa 9097250 TOSHIBA s DISCRETE/OPTO 990 17452 D T-Hi-n TLP543J, TLP545J GaAs IR E D & P H O T O - T H Y R I STOR Unit in ma The TOSHIBA TLP543J consists of a photthyristor optically coupled to a gallium


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    TLP543J, TLP545J TLP543J TLP545J 150mA 2500Vrms PDF

    H 48 zener diode

    Abstract: Toshiba 02BZ2.2 02BZ2.2 zener h 48 zener diode 4.7V current rating Zener Diode frequency Diode 02bz3.9 zener diode si 18 02BZ4.7 opto 101
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA b7 <DI SC R E T E / O PT O> *• ~ dF| ^ 7 2 5 0 67C 09264 Silicon Planar Type DQGiam □ f 0/"-//"O7 i 02BZ2.2-02BZ4.7 Zener Diode Unit in mm LOW VOLTAGE REGULATION AND LOW REFERENCE VOLTAGE APPLICATIONS. FEATURES:


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    02BZ2 2-02BZ4 02BZ4 H 48 zener diode Toshiba 02BZ2.2 02BZ2.2 zener h 48 zener diode 4.7V current rating Zener Diode frequency Diode 02bz3.9 zener diode si 18 02BZ4.7 opto 101 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA OISCRETE/OPTOJ 9097250 TOSHIBA TT D I S C R E TE/OPTO dF | T D T V a S D DülbflEO S 1 ~ 99D 16820 D~p-39-i3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 4 5 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( Tl-MOS E) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


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    p-39-i3 100nA 250uA 250yA SYM30L 00A/us PDF

    Untitled

    Abstract: No abstract text available
    Text: TIM5964-4A FEATURES: • HIGH POWER PldB = 36.5 dBm at 5.9 GHz to 6.4 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 8.5 dB at 5.9 GHz to 6.4 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 25V CHARACTERISTICS Output Power


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    TIM5964-4A 2-11D1B) TDT7250 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA { D I S C R E T E / O P T 0> ^ 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR TECHNICAL DATA 99D DE j t u t r-diiU □□lL.T4cf O 16949 D T -M 3-ÄS- TOSHIBA GTR MODULE MG 1 0 G 4 G M 1 SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS.


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    VQS--10V EGA-MG10G4GM1-4 PDF

    plessey

    Abstract: zvn1409 G146
    Text: PLESSEY SEMICOND/DISCRETE ~^5 DE~| 7520S33 QDG5L37 3 |~~ 7220533 PLESSEY SEMICOND/DISCRETE 95D 05637 T - ^ r - N-channel enhancement mode vertical DMOS FET D ; z r ZVN1409 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown •


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    7520S33 QDG5L37 ZVN1409 G-142 7EB0S33 0DDSL41 G-143 7SSDS33 00DSb45 plessey zvn1409 G146 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO f/aììuha TT DE I TOTVSSO QQlbñbt. 99D 16866 D T -3 = M TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 6 2 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( Ti-MOSI) INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


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    500nA 250gA 00A/us PDF

    vqe 23e

    Abstract: 2sc330 2SA1308 2SC3308 33-IJ
    Text: St T O S H I B A -CDISCRETL/ÖHTÖ*" 9 0 9 7 2 50 T O S H I B A D IS O R F T F / O P T O 2SA1308 I ” "i 5ôC DÌT| A C H T E S □ □ □ □ 7 3 G Û Ö73Ö8 S IL ICON PNP E P IT A X IA L TYPE {PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm


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    2SC3308. 2SA1308 lilllllII1III11KIII vqe 23e 2sc330 2SA1308 2SC3308 33-IJ PDF

    YTF450

    Abstract: dp 52
    Text: TOSHIBA O I S C R E T E / O P T O ï DE I TDTVaSD □□IbflZO 5 W ~ TT 9097250 TOSHIBA <D ISCRETE/OPTO 99D 16820 DT-3CH3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 4 5 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 71 -MOS I ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


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    100nA 250uA 250yA SYM30L 00A/us YTF450 dp 52 PDF