0.22j
Abstract: KMM59256CN-7 .022J CAPACITOR KMM59256CN "at command" Samsung
Text: 7Tbm45 Qaison hm i SAMSUNG ELECTRONICS INC b?E D KMM59256CN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59256CN is a 262,144 b itx 9 Dynamic RAM high density memory module. The Sam sung KMM59256CN consist o f tw o 1M bit DRAMs
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7Tbm45
KMM59256CN
KMM59256CN
KM44C256CJ
20-pin
256J-256K
18-pin
30-pin
0.22j
KMM59256CN-7
.022J CAPACITOR
"at command" Samsung
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QAC22
Abstract: ez 948 ic
Text: SAM S UN G E L E C T R O N I C S INC b?E D 7 T b 4 1 H E D O l b SS l VbT • SMûK ■ KM44C4002 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • The Samsung KM44C4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 x 4 D ynam ic Random A ccess Memory. Its
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KM44C4002
KM44C4002
KM44C4002-7
KM44C4002-8
KM44C4002-6
24-LEAD
QAC22
ez 948 ic
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Untitled
Abstract: No abstract text available
Text: S A MS UN G E L E C T R O N I C S INC b?E ]> 7^142 CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES • Dual port A rchitecture 128K X 8 bits RAM port 256 X 8 bits SAM port • Performance RAM access tim e tRAC • • • • • • •
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KM428C128
150ns
130ns
40-PIN
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Untitled
Abstract: No abstract text available
Text: KM4132G271 CMOS SGRAM 128K X 32Bit X 2Bank Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271 is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG'S high performance CMOS
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KM4132G271
32Bit
KM4132G271
D21L11
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m23c3
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E 3 • DD171S1 T3Ô ■ S H 6 K 7^4142 KM23C32005G CMOS MASK ROM 32M-BH 4M x8!2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time
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DD171S1
KM23C32005G
32M-BH
150ns
100mA
KM23C32005G
7Tbm45
DG1712S
KM23C32005G)
m23c3
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D KM416C256/L/SL • 7^4142 DD1343Q Q24 I SHGK CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256/USL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its
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KM416C256/L/SL
DD1343Q
KM416C256/USL
130ns
KM416C256/USL-8
150ns
KM416C256/L/SL-10
KM416C256/USL-7
100ns
180ns
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Untitled
Abstract: No abstract text available
Text: SFS9Z24 Advanced Power MOSFET FEATURES BVdss = -60 V • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge 175°C Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 iA (Max. @ VOS = -60V
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SFS9Z24
O-220F
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC 7RL.41MS D D l b S3 5 51b « S U G K b?E D CMOS DRAM KM44C4110 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Mode GENERAL DESCRIPTION FEATURES • Performance range: I rac • • • • • • • •
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KM44C4110
KM44C4110-6
110ns
KM44C4110-7
130ns
KM44C4110-8
KM44C4110
150ns
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