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Untitled Abstract: No abstract text available Text: SAMSUNG SEMICO NDUCT OR INC 05 DE\|7U4145 □□Qbblfl KS54HCTLS O Â 1 / Q A O KS74HCTLS o Q U o Q Z 10-Bit Bus Interface D-Type Latches with 3-State Outputs Preliminary Specifications FEATURES DESCRIPTION . These 1O-bii bus interface latches feature three state out	OCR Scan	PDF	7U4145 KS54HCTLS KS74HCTLS 10-Bit 7Tb414S 90-XO 14-Pin
Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR KS54HCTLS KS74HCTLS INC □2 DE\| 7U4145 00Qb3D7 I \| on 8-1np ut Nand Gate FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74LS logic family • Low power consumption characteristic of C M O S • High-Drive-Current outputs:	OCR Scan	PDF	7U4145 00Qb3D7 KS54HCTLS KS74HCTLS 54/74LS 7Tb414S 90-XO 14-Pin
KM44C1004C Abstract: No abstract text available Text: KM44C1004C/CL/CSL CMOS DRAM 1M x4B it CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C tH P C KM44C1004C/CL/CSL-5 50ns 13ns 90ns 20ns KM44C1D04C/CL/CSL-6 60ns 15ns 110ns 24ns KM44C1004C/CUCSL-7	OCR Scan	PDF	KM44C1004C/CL/CSL KM44C1004C/CL/CSL-5 KM44C1D04C/CL/CSL-6 110ns KM44C1004C/CUCSL-7 130ns KM44C1004C/CL/CSL-8 150ns cycle/16ms Norm004C/CL/CSL KM44C1004C
29V040 Abstract: No abstract text available Text: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply • Organization - Memory Cell Array : 512Kx8 - Data Register : 32 x 8 bit • Automatic Program and Erase Typical - Frame Program : 32 Byte in 500us	OCR Scan	PDF	KM29V040T 512Kx8Bit 512Kx8 500us 400mil/0 KM29V040T KM29V040 -TSOP2-400F -TSQP2-400R 29V040
Untitled Abstract: No abstract text available Text: KM44C41OOA/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tR C KM44C4100/VAL/ALL/ASL-5 50ns 13ns 90ns KM44C4100A/AL/ALL/ASL-6 60ns 15ns 110ns KM44C41 OOA/AL/ALL/ASL-7 70ns	OCR Scan	PDF	KM44C41OOA/AL/ALL/ASL KM44C4100/VAL/ALL/ASL-5 KM44C4100A/AL/ALL/ASL-6 110ns KM44C41 130ns KM44C4100A/AL/ALL/ASL-8 150ns 0D11E42
km41c1001 Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR INC S3E D • 7Tbm42 KM41C1001A CMOS DRAM T '4 -6 '5 1 3 - 1 M x 1 Bit Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: tcAc tnc 70ns 20ns 130ns KM41C1001A- 8 80ns 20ns 150ns KM41C1001A-10 100ns 25ns 180ns	OCR Scan	PDF	7Tbm42 KM41C1001A KM41C1001A 18-LEAD 7Tb414E 20-LEAD 20-PIN km41c1001
Untitled Abstract: No abstract text available Text: KMM466S424AT NEW JEDEC SDRAM MODULE KMM466S424AT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S424AT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung	OCR Scan	PDF	KMM466S424AT KMM466S424AT 4Mx64 4Mx16, 400mil 144-pin