Untitled
Abstract: No abstract text available
Text: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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BLY92C
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bly87c
Abstract: transistor tt 2222 yl 1060
Text: N AMER PHILIPS/DISCRETE bTE D • ttS3T31 ODSTbbb 415 H A P X BLY87C Jl V.H.F. POWER TRANSISTOR N-P-N silico n planar e pitaxial tra nsistor intended fo r use in class-A, B and C operated m obile, h.f. and v.h.f. transm itters w ith a nom inal su p p ly voltage o f 13,5 V . T h e tra nsistor is resistance sta bilize d and
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bb53S31
BLY87C
7Z77729
7Z77730
bly87c
transistor tt 2222
yl 1060
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RIL3N
Abstract: transistor 1107 transistor tt 2222 W045 TT 2222 BLY91C j0718 RF POWER TRANSISTOR NPN vhf transistor L6
Text: b SE 711002b D DDb3bll Sbl • PHIN BLY91C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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711002b
00b3bll
BLY91C
OT-120.
RIL3N
transistor 1107
transistor tt 2222
W045
TT 2222
BLY91C
j0718
RF POWER TRANSISTOR NPN vhf
transistor L6
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transistor tt 2222
Abstract: BLV20 TT 2222 RF POWER TRANSISTOR NPN vhf j0718 2222 123 capacitor philips ic TT 2222
Text: PHILIPS INTERNATIONAL b5E J> m 711Gö5b CIQb2ü30 O^ä BLV20 V.H.F. PO W ER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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OCR Scan
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BLV20
OT-123.
711002b
7z68947
7z68946
7z68948
transistor tt 2222
BLV20
TT 2222
RF POWER TRANSISTOR NPN vhf
j0718
2222 123 capacitor philips
ic TT 2222
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10J2
Abstract: 3LV2 BLV20 TRANSISTOR 2X5 sot
Text: •i bb53T31 0025^33 624 H A P X BLV20 b'ìE T> N AMER PH I L I P S /D IS C RE T E V.H.F. POWER TRANSISTOR N -P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters with a nom inal sup p ly voltage of 2 8 V . Th e transistor is resistance stabilized and is guaran
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OCR Scan
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bb53T31
BLV20
OT-123.
7Z68947
7z68946
7Z68948
10J2
3LV2
BLV20
TRANSISTOR 2X5 sot
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BLV21
Abstract: transistor L6 Sss-5 2222 123 capacitor philips B20-4
Text: PHILIPS INTERNATIONAL bSE ]> m 7110fl2b 0GbSfl3ñ 3ÔT « P H I N BLV21 Jl V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in cfass-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaran
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OCR Scan
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711002b
BLV21
OT-123.
7Z68949
BLV21
transistor L6
Sss-5
2222 123 capacitor philips
B20-4
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BLV10
Abstract: RF POWER TRANSISTOR NPN vhf
Text: N AMER PHILIPS/DISCRETE bRE D • bb53^3L OOEB'iOl E m IAPX BLV10 V.H.F. POWER TRANSISTOR N-P-N silico n planar e p ita xia l tra n sisto r intended fo r use in ciass-A, B and C operated m ob ile, h .f. and v.h.f. tran sm itte rs w ith a nom inal supply voltage o f 13,5 V . T he tran sisto r is resistance stabilized and
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BLV10
76-j16
7Z78515
BLV10
RF POWER TRANSISTOR NPN vhf
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bSE 1> • bb53S31 002clbbb 41S HIAPX I BLY87C A _ V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and
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bb53S31
BLY87C
Q0ETb73
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE ]> bbS3cl31 DOETfciflM 430 BLY88C APX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is
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BLY88C
bb53T31
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PDF
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BLV11
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbsa^ai □QañiD'i sqs BLV11 b^E IAPX JL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is
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OT-123.
BLV11
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