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    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b'lE D • bbSS1^ ! DQETBbb 77E « A P X BLW76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­


    OCR Scan     		BLW76 7Z78092 PDF

    Philips polystyrene capacitors

    Abstract: wf vqe 13 E WF VQE 13 WF VQE 23 E WF VQE 14 A6 WF VQE 21 e ad transistors ai 757 wf vqe 21 f ad WF VQE 22 d WF vqe 13 D
    Text: bSE D B 7110fl2b QDb32b3 T3L H P H I N BLW76 PHILIPS IN T E R N A T I O N A L y v H.F./V.H.F. POW ER T R A N SIST O R N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­


    OCR Scan     		BLW76 7z77457 Philips polystyrene capacitors wf vqe 13 E WF VQE 13 WF VQE 23 E WF VQE 14 A6 WF VQE 21 e ad transistors ai 757 wf vqe 21 f ad WF VQE 22 d WF vqe 13 D PDF

    BLw76a

    Abstract: BLW76 BD433 74412
    Text: N AMER PHILIPS/DISCRETE b*ìE » • hb53T31 D a E ^ b b 772 ■ APX tSLW 76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transm itters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­


    OCR Scan     		hb53T31 BLw76a BLW76 BD433 74412 PDF