AQS610TS
Abstract: AQS610TSX AQS610TSZ
Text: GU PhotoMOS AQS610TS TESTING 3-channel (1a1b MOSFET & optocoupler) SOP 16-pin type. 1a1b MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 mm inch 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Relay portion (2,3,14,15,16 pins) (4,5,11,12,13 pins)
|
Original
|
PDF
|
AQS610TS)
16-pin
083inch
AQS610TS
AQS610TSX
AQS610TSZ
|
Untitled
Abstract: No abstract text available
Text: GU PhotoMOS AQS610TS TESTING 3-channel (1a1b MOSFET & optocoupler) SOP 16-pin type. 1a1b MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 mm inch 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Relay portion (2,3,14,15,16 pins) (4,5,11,12,13 pins)
|
Original
|
PDF
|
AQS610TS)
16-pin
083inch
|
Untitled
Abstract: No abstract text available
Text: Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.012 @ VGS = –4.5 V "8.8 0.017 @ VGS = –2.5 V "7.4 0.025 @ VGS = –1.8 V "6.0 S* TSSOP-8 D 8 D 7 S 3 6 S 4 5 D 1 S 2 S G D Si6465DQ G *Source Pins 2, 3, 6 and 7
|
Original
|
PDF
|
Si6465DQ
08-Apr-05
|
Si6465DQ
Abstract: No abstract text available
Text: Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.012 @ VGS = –4.5 V "8.8 0.017 @ VGS = –2.5 V "7.4 0.025 @ VGS = –1.8 V "6.0 S* TSSOP-8 D 8 D 7 S 3 6 S 4 5 D 1 S 2 S G D Si6465DQ G *Source Pins 2, 3, 6 and 7
|
Original
|
PDF
|
Si6465DQ
S-56943--Rev.
02-Nov-98
|
72511
Abstract: Si6433BDQ Si6433BDQ-T1
Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −4.8 0.070 @ VGS = −2.5 V −3.6 S* TSSOP-8 D 1 S 2 S 3 G 4 G * Source Pins 2, 3, 6 and 7 must be tied common. 8 D 7 S D
|
Original
|
PDF
|
Si6433BDQ
Si6433BDQ-T1
Si6433BDQ-T1--E3
S-50156--Rev.
31-Jan-05
72511
|
72511
Abstract: Si6433BDQ Si6433BDQ-T1
Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −4.8 0.070 @ VGS = −2.5 V −3.6 S* TSSOP-8 D 1 S 2 S 3 G 4 G * Source Pins 2, 3, 6 and 7 must be tied common. 8 D 7 S D
|
Original
|
PDF
|
Si6433BDQ
Si6433BDQ-T1
Si6433BDQ-T1--E3
08-Apr-05
72511
|
Si6463DQ
Abstract: No abstract text available
Text: Si6463DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) ID (A) 0.020 @ VGS = –4.5 V "6.5 0.030 @ VGS = –2.5 V "5.2 S* TSSOP-8 D 1 S 2 S 3 6 S G 4 5 D D Si6463DQ 8 D 7 S G * Source Pins 2, 3, 6 and 7 must be tied common.
|
Original
|
PDF
|
Si6463DQ
S-51477--Rev.
17-Feb-97
|
Si6433BDQ
Abstract: 72511
Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7
|
Original
|
PDF
|
Si6433BDQ
Si6433BDQ-T1-GE3
08-Apr-05
72511
|
Si6433DQ
Abstract: No abstract text available
Text: Si6433DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.06 @ VGS = –4.5 V "4.0 0.09 @ VGS = –2.5 V "3.0 S* TSSOP-8 D S S G 1 2 D 8 7 Si6433DQ 3 6 4 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View
|
Original
|
PDF
|
Si6433DQ
S-47118--Rev.
22-Apr-96
|
Si6435DQ
Abstract: No abstract text available
Text: Si6435DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View
|
Original
|
PDF
|
Si6435DQ
S-47958--Rev.
15-Apr-96
|
Si6459BDQ
Abstract: Si6459BDQ-T1
Text: Si6459BDQ Vishay Siliconix New Product P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) −60 60 FEATURES rDS(on) (W) ID (A) 0.115 @ VGS = −10 V −2.7 0.150 @ VGS = −4.5 V −2.4 D TrenchFETr Power MOSFET S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S D * Source Pins 2, 3, 6 and 7
|
Original
|
PDF
|
Si6459BDQ
Si6459BDQ-T1
S-32220--Rev.
03-Nov-03
|
72511
Abstract: No abstract text available
Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7
|
Original
|
PDF
|
Si6433BDQ
Si6433BDQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
72511
|
72511
Abstract: No abstract text available
Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7
|
Original
|
PDF
|
Si6433BDQ
Si6433BDQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
72511
|
Si6434DQ
Abstract: Si6434DQ-T1
Text: Si6434DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V 5.6 0.042 @ VGS = 4.5 V 4.5 D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D * Source Pins 2, 3, 6 and 7 must be tied common.
|
Original
|
PDF
|
Si6434DQ
Si6434DQ-T1
S-31725--Rev.
18-Aug-03
|
|
|
Untitled
Abstract: No abstract text available
Text: Si6802DQ Vishay Siliconix N-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 20 RDS(ON) (W) ID (A) 0.075 @ VGS = 4.5 V "3.3 0.110 @ VGS = 3.0 V "2.7 D TSSOP-8 D 1 S 2 S 3 G 4 D Si6802DQ 8 D 7 S 6 S 5 D G *Source Pins 2, 3, 6, and 7 must be tied common.
|
Original
|
PDF
|
Si6802DQ
S-49520--Rev.
18-Dec-96
|
Si6434DQ
Abstract: Si6434DQ-T1
Text: Si6434DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V 5.6 0.042 @ VGS = 4.5 V 4.5 D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D * Source Pins 2, 3, 6 and 7 must be tied common.
|
Original
|
PDF
|
Si6434DQ
Si6434DQ-T1
18-Jul-08
|
Si6467BDQ
Abstract: No abstract text available
Text: Si6467BDQ New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.0125 @ VGS = -4.5 V -8.0 0.0155 @ VGS = -2.5 V - 7.0 0.020 @ VGS = -1.8 V - 6.0 S* TSSOP-8 D 1 S 2 S 3 G 4 D Si6467BDQ G 8 D 7 S * Source Pins 2, 3, 6 and 7
|
Original
|
PDF
|
Si6467BDQ
S-22382--Rev.
30-Dec-02
|
Si6433BDQ
Abstract: 72511
Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7
|
Original
|
PDF
|
Si6433BDQ
Si6433BDQ-T1-GE3
18-Jul-08
72511
|
Si6447DQ
Abstract: No abstract text available
Text: Si6447DQ Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.09 @ VGS = –10 V "3.2 0.16 @ VGS = –4.5 V "2.4 S* TSSOP-8 D D 8 D 7 S 3 6 S 4 5 D 1 S 2 S G Si6447DQ G * Source Pins 2, 3, 6 and 7 must be tied common.
|
Original
|
PDF
|
Si6447DQ
18-Jul-08
|
Si6459DQ
Abstract: No abstract text available
Text: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.
|
Original
|
PDF
|
Si6459DQ
18-Jul-08
|
Si6466ADQ
Abstract: Si6466ADQ-T1
Text: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 8.1 0.020 @ VGS = 2.5 V 6.6 D TrenchFETr Power MOSFET D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D * Source Pins 2, 3, 6 and 7
|
Original
|
PDF
|
Si6466ADQ
Si6466ADQ-T1
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: SÌ6465DQ VISHAY Siliconix T P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUM M ARY V d s (V) -8 r DS(ON) (-2) I d (A) 0.012 @ VGS = —4.5 V ±8 .8 0.017 @ VGS = —2.5 V ±7 .4 0.025 @ VGS = -1 .8 V ±6 .0 SQ TSSOP-8 °n i - J ; *Source Pins 2, 3, 6 and 7
|
OCR Scan
|
PDF
|
6465DQ
S-59517--
04-Sep-98
|
Untitled
Abstract: No abstract text available
Text: SI6465DQ VISHAY Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUM M AR Y V DS (V) -8 r DS(ON) I d (A) (& ) 0.012 @ VGS = —4.5 V ±8 .8 0.017 @ VGS = —2.5 V ±7 .4 0.025 @ VGS = -1 .8 V ±6 .0 I* ' v* so TSSOP-8 D S D Si6465DQ 'Source Pins 2, 3, 6 and 7
|
OCR Scan
|
PDF
|
SI6465DQ
Si6465DQ
S-56943â
02-Nov-98
|
Untitled
Abstract: No abstract text available
Text: SÌ6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET Vb* ( V * I d IA I R o s to w 0 .0 1 4 V GS = 10 V ± 7 .8 0.021 @ V g ± 6 .3 30 s -4 -5 V TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. Top View N-Channei MO SFET SYM BOL L IM IT Drain-Source Voltage
|
OCR Scan
|
PDF
|
6410DQ
S-56945--
23-Nov-98
|
