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    Infineon Technologies AG IPD800N06NGBTMA1

    MOSFET N-CH 60V 16A TO252-3
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    800N06N Datasheets Context Search

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    800n06n

    Abstract: IPD800N06N P-TO252-3-11 d4120 IPD800N06NG d16av
    Text: 800N06N G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 80 mΩ ID 16 A • 175 °C operating temperature • Avalanche rated


    Original     		IPD800N06N P-TO252-3-11 800N06N 800n06n P-TO252-3-11 d4120 IPD800N06NG d16av PDF

    800n06n

    Abstract: IPD800N06N
    Text: 800N06N G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 80 mΩ ID 16 A • 175 °C operating temperature • Avalanche rated


    Original     		IPD800N06N PG-TO252-3 800N06N PG-TO252-3: 800n06n PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    Untitled

    Abstract: No abstract text available
    Text: 800N06N G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 80 mΩ ID 16 A • 175 °C operating temperature • Avalanche rated


    Original     		IPD800N06N P-TO252-3-11 800N06N PG-TO252-3: PDF