P4NC80ZF
Abstract: P4NC80Z p4nc80 P4NC80ZFP STP4NC80Z
Text: STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4Ω - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP4NC80Z/FP 800V < 2.8 Ω 4A STB4NC80Z/-1 800V < 2.8 Ω 4A • ■ ■ ■ ■ TYPICAL RDS(on) = 2.4 Ω
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STP4NC80Z
STP4NC80ZFP
STB4NC80Z
STB4NC80Z-1
O-220/FP/D2PAK/I2PAK
STP4NC80Z/FP
STB4NC80Z/-1
O-220
O-220FP
O-220)
P4NC80ZF
P4NC80Z
p4nc80
P4NC80ZFP
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L9 Zener
Abstract: STB4NC80Z STB4NC80Z-1 STP4NC80Z STP4NC80ZFP
Text: STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4Ω - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP4NC80Z/FP 800V < 2.8 Ω 4A STB4NC80Z/-1 800V < 2.8 Ω 4A • ■ ■ ■ ■ TYPICAL RDS(on) = 2.4 Ω
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STP4NC80Z
STP4NC80ZFP
STB4NC80Z
STB4NC80Z-1
O-220/FP/D2PAK/I2PAK
STP4NC80Z/FP
STB4NC80Z/-1
O-220
O-220FP
O-220)
L9 Zener
STB4NC80Z-1
STP4NC80ZFP
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W1213
Abstract: No abstract text available
Text: STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4Ω - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP4NC80Z/FP 800V < 2.8 Ω 4A STB4NC80Z/-1 800V < 2.8 Ω 4A • ■ ■ ■ ■ TYPICAL RDS(on) = 2.4 Ω
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STP4NC80Z
STP4NC80ZFP
STB4NC80Z
STB4NC80Z-1
O-220/FP/D2PAK/I2PAK
STP4NC80Z/FP
STB4NC80Z/-1
O-220
O-220FP
W1213
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P4NC80Z
Abstract: p4nc80 P4NC80ZF P4NC80ZFP 4NC80 STB4NC80ZT4 4NC80Z STB4NC80Z STB4NC80Z-1 STP4NC80Z
Text: STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4Ω - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP4NC80Z/FP 800V < 2.8 Ω 4A STB4NC80Z/-1 800V < 2.8 Ω 4A • ■ ■ ■ ■ 3 TYPICAL RDS(on) = 2.4 Ω
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STP4NC80Z
STP4NC80ZFP
STB4NC80Z
STB4NC80Z-1
O-220/FP/D2PAK/I2PAK
STP4NC80Z/FP
STB4NC80Z/-1
O-220
O-220FP
O-220)
P4NC80Z
p4nc80
P4NC80ZF
P4NC80ZFP
4NC80
STB4NC80ZT4
4NC80Z
STB4NC80Z-1
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4NC80Z
Abstract: L9 Zener STB4NC80Z-1 STP4NC80Z STP4NC80ZFP
Text: STP4NC80Z - STP4NC80ZFP STB4NC80Z-1 N-CHANNEL 800V - 2.4Ω - 4A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP4NC80Z/FP 800V < 2.8 Ω 4A STB4NC80Z-1 800V < 2.8 Ω 4A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt AND CAPABILITY
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STP4NC80Z
STP4NC80ZFP
STB4NC80Z-1
O-220/TO-220FP/I2PAK
STP4NC80Z/FP
O-220
O-220FP
4NC80Z
L9 Zener
STB4NC80Z-1
STP4NC80ZFP
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Untitled
Abstract: No abstract text available
Text: R8002ANX Nch 800V 2A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 4.3W ID 2A PD 35W TO-220FM (3) (1) (2) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R8002ANX
O-220FM
R1120A
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Untitled
Abstract: No abstract text available
Text: R8002ANX Datasheet Nch 800V 2A Power MOSFET lOutline VDSS 800V RDS on (Max.) 4.3W ID 2A PD 35W TO-220FM (3) (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R8002ANX
O-220FM
R1120A
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Untitled
Abstract: No abstract text available
Text: R8002ANX Nch 800V 2A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 4.3W ID 2A PD 35W TO-220FM (3) (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R8002ANX
O-220FM
R1120A
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Untitled
Abstract: No abstract text available
Text: R8002ANX R8002ANX Datasheet Nch 800V 2A Power MOSFET lOutline VDSS 800V RDS on (Max.) 4.3W ID 2A PD 35W TO-220FM (3) (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R8002ANX
O-220FM
R1120A
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Untitled
Abstract: No abstract text available
Text: R8002ANJ Nch 800V 2A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 4.3W ID 2A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R8002ANJ
SC-83)
R1102A
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TF12A80
Abstract: tf12a
Text: TF12A80 Standard Triac Symbol ○ TO-220F VDRM = 800V 2.T2 IT RMS = 12 A ▼▲ ○ ITSM = 126A 3.Gate 1.T1 ○ 1 2 3 Features Repetitive Peak Off-State Voltage : 800V R.M.S On-State Current ( IT(RMS)= 1 A ) ◆ High Commutation dv/dt ◆ ◆ General Description
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TF12A80
O-220F
50Hz/60Hz,
Non-Repetitiv84
O-220F
TF12A80
tf12a
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TF8A80
Abstract: No abstract text available
Text: TF8A80 Standard Triac TO-220F Symbol ○ VDRM = 800V 2.T2 IT RMS = 8 A ▼▲ ○ 3.Gate ITSM = 84A 1.T1 ○ 1 2 3 Features Repetitive Peak Off-State Voltage : 800V R.M.S On-State Current ( IT(RMS)=8 A ) ◆ High Commutation dv/dt ◆ ◆ General Description
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TF8A80
O-220F
50Hz/60Hz,
O-220F
TF8A80
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D2SB80A
Abstract: No abstract text available
Text: SHINDENGEN General Purpose Rectifiers SIL Bridges OUTLINE DIMENSIONS D2SB80A Case : 2S Unit : mm 800V 2A RATINGS Absolute Maximum Ratings If not specified, Tl=25 Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage
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D2SB80A
1mst10ms
D2SB80A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD SSB303 Preliminary ZCB snubber ZCB snubber DESCRIPTION The UTC SSB303 is a ZCB snubbers. FEATURES * Collector-base voltage: V BR CB=800V * Collector current: IC=2A SYMBOL ORDERING INFORMATION Ordering Number Lead Free
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SSB303
SSB303
SSB303L-T9B-B
SSB303G-T9B-B
SSB303L-T9B-K
SSB303G-T9B-K
O-92B
QW-R225-003
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TSC5302D
Abstract: TSC5302DCH TSC5302DCP
Text: Preliminary TSC5302D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 800V Ic = 2A VCE SAT , = 1.0V @ Ic / Ib = 1A / 0.2A Features Ordering Information Built-in free-wheeling diode makes efficient anti
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TSC5302D
TSC5302DCH
O-251
TSC5302DCP
O-252
O-251
TS5302D
TSC5302D
TSC5302DCH
TSC5302DCP
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m2lz47
Abstract: thyristor M2LZ47 Triode m2lz47 SM2LZ47 m2lz
Text: SM2LZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2LZ47 AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 800V R.M.S. On−State Current: IT RMS = 2A High Commutation (dv / dt): (dv / dt) c = 5V / µs (Min.)
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SM2LZ47
m2lz47
thyristor M2LZ47
Triode m2lz47
SM2LZ47
m2lz
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M2LZ47
Abstract: thyristor M2LZ47 m2lz 13-10H1A Triode m2lz47 SM2LZ47
Text: SM2LZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2LZ47 AC POWER CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off−State Voltage: VDRM = 800V z R.M.S. On−State Current: IT RMS = 2A z High Commutation (dv / dt): (dv / dt) c = 5V / s (Min.)
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SM2LZ47
M2LZ47
thyristor M2LZ47
m2lz
13-10H1A
Triode m2lz47
SM2LZ47
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS2UM-16A HIGH-SPEED SWITCHING USE FS2UM-16A • Voss .800V • rDS ON (MAX) .6.0Q • Id . 2A
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FS2UM-16A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5VS-16A HIGH-SPEED SWITCHING USE FS5VS-16A OUTLINE DRAWING Dimensions in mm • V dss . 800V • rDS ON (MAX) . 2.3Q
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FS5VS-16A
O-220S
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FS5UM-16A
Abstract: 71Q1
Text: MITSUBISHI Neh POWER MOSFET FS5UM-16A HIGH-SPEED SWITCHING USE FS5UM-16A OUTLINE DRAWING Dimensions in mm V d s s .800V rDS ON (MAX) . 2.3Í1
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FS5UM-16A
O-220
71Q-123
FS5UM-16A
71Q1
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5UM-16A HIGH-SPEED SWITCHING USE FS5UM-16A • VOSS . 800V • TDS ON (MAX) . 2 .3 ÎÎ • I D . 5A
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FS5UM-16A
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PCR 406 J
Abstract: GFF90B12 GFF200E12 PCR 606 J M-216 H-24 SS1002 VD-800V
Text: - 91 a G FF90B h • « Â W lÎtt II!. G FF 9 0 B 1 2 .111 V drm I n RMS 30 T c = 6 0 X ) I t qrm 90 ( Ko = 800V, 180 ( Vb = 800V, It sm 400 (1 . 5 m s # M , di / d t 200 Vcrm P C F (AV) 120 ( 1 . 5 m s M , 20 10 Tj £ „„//= 12V) £,„//= 1 2 V )
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GFF90B
GFF90B12
300S2
RmS300Q
H-101
PCR 406 J
GFF90B12
GFF200E12
PCR 606 J
M-216
H-24
SS1002
VD-800V
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Untitled
Abstract: No abstract text available
Text: _a_ zn: I File No. SHEET 627 ILL SPECIFICATIONS Current Rating:2A AC,DC Voltage Rating:250V AC.DC Contact Resistance: 10Milliohms Max Insulation ResistancelOOOMegohms Min A Dielectric Withstanding Voltage:800V AC/Minute Operating Temperature:—2 5 'c ~ + 8 5 'C
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10Milliohms
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Untitled
Abstract: No abstract text available
Text: 1 I _ a_ File No. zn: I SHEET 466 ILL SPECIFICATION Current Rating: 2A AC/DC Voltage Rating: 100V AC/DC Temperature Range:—25‘C ~ + 8 5 ‘C Contact Resistance: 20 Milliohms Max. Insulation Resistance: 1000 Megaohms Min. Withstanding Voltage: 800V AC/Minute
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UL94Vâ
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