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Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y APT8018JN 800V 40A 0.180 "UL Recognized" File No. E145592 S ISOTOP* POWER MOS IVe 157* i N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D All Ratings: Tc = 25 °C unless otherwise specified.
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APT8018JN
E145592
8018JN
OT-227
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APT8018JN
Abstract: TL 160
Text: S S D D G G 27 2 T- SO APT8018JN S 800V 0.18Ω 40A "UL Recognized" File No. E145592 S ISOTOP POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.
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APT8018JN
E145592
8018JN
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Untitled
Abstract: No abstract text available
Text: ADVANCED PO W ER a Te c h n o l o g y APT8018JN ISOTOP' POWER MOS IV® 800V 40A 0.18Í2 S Ù " U L DIE Recognized" File No. E145592 S SINGLE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.
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APT8018JN
E145592
8018JN
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Untitled
Abstract: No abstract text available
Text: O A d van ced po w er Te c h n o l o g y D APT8018JN As 800V 40A 0.18Q 5 M " U L Recognized" File No. E145592 S ISOTOP® POWER MOS IV' SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd All Ratings: Tc = 25°C unless otherwise specified.
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APT8018JN
E145592
8018JN
OT-227
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APTMC120AM55CT1AG
Abstract: 800V 40A mosfet
Text: APTMC120AM55CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 55mΩ max @ Tj = 25°C ID = 55A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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APTMC120AM55CT1AG
APTMC120AM55CT1AG
800V 40A mosfet
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800V 40A mosfet
Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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APTMC60TLM55CT3AG
800V 40A mosfet
mosfet 1200V 40A
MOSFET 40A 600V
APTMC60TLM55CT3AG
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Abstract: No abstract text available
Text: APTMC120AM55CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 49mΩ max @ Tj = 25°C ID = 55A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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Abstract: No abstract text available
Text: APTMC120AM25CT3AG VDSS = 1200V RDSon = 25mΩ max @ Tj = 25°C ID = 105A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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APTMC120AM25CT3AG
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"VDSS 800V" 40A mosfet
Abstract: APTMC120AM20CT1AG mosfet 1200V 40A 800V 40A mosfet mosfet 40a 200v SiC POWER MOSFET Microsemi MOSFET 1200V
Text: APTMC120AM20CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 20mΩ max @ Tj = 25°C ID = 102A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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APTMC120AM20CT1AG
"VDSS 800V" 40A mosfet
APTMC120AM20CT1AG
mosfet 1200V 40A
800V 40A mosfet
mosfet 40a 200v
SiC POWER MOSFET
Microsemi MOSFET 1200V
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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APTMC60TLM55CT3AG
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RJH60F7
Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to
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RJP6085DPN
O-220AB
RJP6085DPK
RJH6085BDPK
RJH6086BDPK
RJH6087BDPK
RJH6088BDPK
RJH60F7
rjh60f5
RJH60
RJH60F4
RJH60F7A
BCR25KR
RJH60F6
rjh1cf7
rjh60d2
RJK0652
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800V 40A mosfet
Abstract: mosfet 1200V 40A
Text: APT100MC120JCU2 ISOTOP Boost chopper SiC MOSFET + SiC chopper diode Power module K D VDSS = 1200V RDSon = 20mΩ max @ Tj = 25°C ID = 102A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT100MC120JCU2
OT-227)
800V 40A mosfet
mosfet 1200V 40A
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20N100A
Abstract: IXGH20N100A IXGH20N100A3 IXGP20N100A3
Text: Advance Technical Information GenX3TM 1000V IGBTs VCES = 1000V IC90 = 20A VCE sat ≤ 2.3V IXGA20N100A3 IXGP20N100A3 IXGH20N100A3 Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXGA20N100A3
IXGP20N100A3
IXGH20N100A3
O-263
O-220
O-247
20N100A3
6-11-A
20N100A
IXGH20N100A
IXGH20N100A3
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Abstract: No abstract text available
Text: Advance Technical Information GenX3TM 1000V IGBTs VCES = 1000V IC90 = 20A VCE sat ≤ 2.3V IXGA20N100A3 IXGP20N100A3 IXGH20N100A3 Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXGA20N100A3
IXGP20N100A3
IXGH20N100A3
O-263
O-220
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6-11-A
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ICE3B0365J
Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)
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SPP21N50C3
SPA21N50C3
SPI21N50C3
SPP16N50C3
SPA16N50C3
SPI16N50C3
SPW21N50C3
SPP12N50C3
SPA12N50C3
SPI12N50C3
ICE3B0365J
ICE3BR4765J
TDA16888
ICE2A765P2
ICE2PCS01G
ICE1PCS02G
ICE2B0565
ICE1PCS02
ICE2pcs02
IPI60R099CP
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Abstract: No abstract text available
Text: Silicon Carbide Power MOSFET 1200 Volt 40 Amp Hermetic MYXMN1200-40CAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • High voltage 1200V isolation in a small package outline • High blocking voltage with low RDS on
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Abstract: No abstract text available
Text: APTMC120TAM17CTPAG VDSS = 1200V RDSon = 17mΩ max @ Tj = 25°C ID = 147A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features
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triac mw 131 600d
Abstract: 65n06
Text: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717
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Abstract: No abstract text available
Text: APTMC120AM20CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 17mΩ max @ Tj = 25°C ID = 143A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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800V 40A mosfet
Abstract: APT0406 APT0502 APTM100VDA35T3G
Text: APTM100VDA35T3G Dual Boost chopper MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction PFC • Interleaved PFC 28 27 26 25
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APTM100VDA35T3G
APTM100VDA35T3G
800V 40A mosfet
APT0406
APT0502
APTM100VDA35T3G
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Untitled
Abstract: No abstract text available
Text: APTM100VDA35T3G Dual Boost chopper MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction PFC • Interleaved PFC 28 27 26 25
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APTM100VDA35T3G
APTM100VDA35T3Gâ
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Abstract: No abstract text available
Text: APT100MC120JCU2 VDSS = 1200V RDSon = 17mΩ max @ Tj = 25°C ID = 143A @ Tc = 25°C ISOTOP Boost chopper SiC MOSFET + SiC chopper diode Power module K D Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT100MC120JCU2
OT-227)
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Abstract: No abstract text available
Text: APTM100DA18T1G VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 40A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction
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Infineon technology roadmap for mosfet
Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
Text: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial
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KMZ60
KMA210
KMA215
Infineon technology roadmap for mosfet
LFPAK88
Acbel schematic diagram switching power supply
BLDC TRW
schematic diagram inverter air conditioner
schematic diagram for split air conditioner
TRIAC 20A 600V
inverter schematic ims 1600
triac 4A, 600V, 5mA
triac 0,8A, 600V, 5mA
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