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Littelfuse Inc IXFN80N50P MOSFET N-CH 500V 66A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN80N50P	Tube	2,956		1	1 $30.99 10 $23.624 100 $30.99 1000 $30.99 10000 $30.99	Buy Now
Newark	IXFN80N50P	Bulk	103		1	1 $30.37 10 $23.72 100 $22.09 1000 $22.09 10000 $22.09	Buy Now
RS	IXFN80N50P	Bulk		8 Weeks	10	1 - 10 $34.86 100 $34.86 1000 $34.86 10000 $34.86	Get Quote
Chip1Stop	IXFN80N50P	Tube	296			1 $24.7 10 $21.5 100 $19.4 1000 $19.4 10000 $19.4	Buy Now
Littelfuse Inc IXFK80N50P MOSFET N-CH 500V 80A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK80N50P	Tube	450		1	1 $20.66 10 $20.66 100 $20.66 1000 $20.66 10000 $20.66	Buy Now
Newark	IXFK80N50P	Bulk			300	1 - 10 - 100 - 1000 $14.36 10000 $14.36	Buy Now
RS	IXFK80N50P	Bulk		8 Weeks	25	1 - 10 - 100 $21.19 1000 $21.19 10000 $21.19	Get Quote
Littelfuse Inc IXFR80N50P MOSFET N-CH 500V 45A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR80N50P	Tube	352		1	1 $22.53 10 $22.53 100 $15.24267 1000 $15.24267 10000 $15.24267	Buy Now
Newark	IXFR80N50P	Bulk			300	1 - 10 - 100 - 1000 $15.98 10000 $15.98	Buy Now
RS	IXFR80N50P	Bulk		8 Weeks	30	1 - 10 - 100 $23.58 1000 $23.58 10000 $23.58	Get Quote
Littelfuse Inc IXFX80N50P MOSFET N-CH 500V 80A PLUS247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFX80N50P	Tube	30		300	1 - 10 - 100 - 1000 $14.126 10000 $14.126	Buy Now
Newark	IXFX80N50P	Bulk			300	1 - 10 - 100 - 1000 $14.81 10000 $14.81	Buy Now
IXYS Corporation IXFN80N50P MOSFET Modules 500V 80A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFN80N50P		736			1 $30.15 10 $23.62 100 $22.53 1000 $22.53 10000 $22.53	Buy Now
TTI	IXFN80N50P	Tube			300	1 - 10 - 100 - 1000 $22.99 10000 $22.54	Buy Now
New Advantage Corporation	IXFN80N50P		683		1	1 - 10 - 100 $46.4 1000 $43.31 10000 $43.31	Buy Now

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80N50P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
80N50P Abstract: IXFK 80N50P PLUS247 Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 65 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	PDF	80N50P O-264 80N50P IXFK 80N50P PLUS247
Untitled Abstract: No abstract text available Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 75 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	PDF	80N50P 80N50P O-264 PLUS247
80n50 Abstract: 80N50P ISOPLUS247 4525 GE alize Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A ≤ 72 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C	Original	PDF	ISOPLUS247TM 80N50P 80n50 80N50P ISOPLUS247 4525 GE alize
80N50P Abstract: IXFN 80N50P E153432 Text: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	80N50P 80N50P IXFN 80N50P E153432
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous	Original	PDF	80N50P
80N50 Abstract: 80N50P IXFN 80N50P Text: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous	Original	PDF	80N50P 80N50 80N50P IXFN 80N50P
80N50P Abstract: IXFK 80N50P 80N50 PLUS247 Text: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGSM VGSM	Original	PDF	80N50P 80N50P IXFK 80N50P 80N50 PLUS247
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A Ω ≤ 72 mΩ ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	PDF	ISOPLUS247TM 80N50P
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 = 500 V = 80 A Ω ≤ 65 mΩ ≤ 200 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C	Original	PDF	80N50P
80N50P Abstract: ISOPLUS247 PLUS247 Text: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	ISOPLUS247TM 80N50P ISOPLUS247 E153432 405B2 80N50P ISOPLUS247 PLUS247
Untitled Abstract: No abstract text available Text: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	80N50P OT-227 E153432 405B2
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	PDF	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

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80N50P Price and Stock

Littelfuse Inc IXFN80N50P

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80N50P Datasheets Context Search

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7N60B equivalent

STW20N60