DARLINGTON 1A 60V npn to92
Abstract: ZTX602 ZTX603 DSA003770
Text: ZTX602 ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL hFE Static Forward Current Transfer Ratio ZTX602 MIN. MAX. MIN. 2K 5K 2K 0.5K 2K 5K 2K 0.5K 100K 150
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ZTX602
ZTX603
500mA,
100mA,
20MHz
DARLINGTON 1A 60V npn to92
ZTX602
ZTX603
DSA003770
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ztx603
Abstract: No abstract text available
Text: ZTX602 Not Recommended for New Design Please Use ZTX603 ZTX602 ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE Transition Frequency fT
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ZTX602
ZTX603
ZTX603
100ms
ZTX602
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ZTX603
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT603 ISSUE 1 MARCH 94 FEATURES * 80 Volt VCEO * Gain of 2K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 packages
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ZTX603
ZTX603
FXT603
500mA,
100mA,
20MHz
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ZTX603
Abstract: FXT603
Text: Alternative part - ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT603 ISSUE 1 MARCH 94 FEATURES * 80 Volt VCEO * Gain of 2K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 packages
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ZTX603
FXT603
ZTX603
500mA,
100mA,
20MHz
FXT603
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FXT603
Abstract: 80V 1A NPN Transistor npn darlington transistor 150 watts ZTX603 DSA0037553
Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT603 ISSUE 1 MARCH 94 FEATURES * 80 Volt VCEO * Gain of 2K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 packages REFER TO ZTX603 FOR GRAPHS
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FXT603
ZTX603
500mA,
100mA,
20MHz
FXT603
80V 1A NPN Transistor
npn darlington transistor 150 watts
DSA0037553
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Untitled
Abstract: No abstract text available
Text: DISCONTINUED PLEASE USE ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT603 ISSUE 1 MARCH 94 FEATURES * 80 Volt VCEO * Gain of 2K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 packages
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ZTX603
FXT603
ZTX603
500mA,
100mA,
20MHz
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BDX67
Abstract: npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1000 Min @ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier
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BDX66/A/B/C
BDX67
BDX67C
BDX67A
BDX67B
BDX67
npn 120v 10a transistor
transistor bdx67
BDX66
NPN Transistor VCEO 80V 100V
NPN Transistor VCEO 80V 100V DARLINGTON
BDX67C
BDX67B
darlington power transistor 10a
transistor bdx66
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2N6387
Abstract: 2N6388
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N6387 2N6388 NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS TO-220 Plastic Package Designed for General Purpose Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS
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2N6387
2N6388
O-220
C-120
2N6387
2N6388Rev
310505E
2N6388
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N6387 2N6388 NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS TO-220 Plastic Package Designed for General Purpose Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS
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2N6387
2N6388
O-220
C-120
2N6387
2N6388Rev
310505E
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ZTX602 ZTX603 ISSUE 1 MARCH 94 FEATURES * 80 Volt VCEO * 1 Amp continuous current * Gain of 2K at IC=1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 5 5 5 5 5 PARAMETER SYMBOL
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ZTX602
ZTX603
100ms
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Untitled
Abstract: No abstract text available
Text: 2N6385SMD05 MECHANICAL DATA Dimensions in mm inches SILICON POWER NPN DARLINGTON TRANSISTOR 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) • High Gain Darlington Performance 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225)
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2N6385SMD05
SMD05
O-276AA)
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darlington power transistor
Abstract: POWER TRANSISTOR TIP131 TIP131 TIP136 80V 1A NPN darlington
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 4A
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TIP136
darlington power transistor
POWER TRANSISTOR TIP131
TIP131
TIP136
80V 1A NPN darlington
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philips BDV64A
Abstract: T1P121 BDV66A PHILIPS SEMICONDUCTOR bdv65a philips 200v 4A pnp BDV65 PHILIPS SEMICONDUCTOR philips TIP147 B0646 B0648 BU807 PHILIPS SEMICONDUCTOR
Text: N AflER P H I L I P S / D I S C R E T E E5E D • bb53T31 D O ltiE l? b Hi T-& 1 -3-*? Power Devices 39 LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN TIP110 TIP111 TIP112 BD675 BD677 BD679 BD681 BD683 PNP fC (D C )0 ) V CEO
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TIP110
TIP111
TIP112
TIP115
TIP116
TIP117
O-220AB
BD675
BD677
BD679
philips BDV64A
T1P121
BDV66A PHILIPS SEMICONDUCTOR
bdv65a philips
200v 4A pnp
BDV65 PHILIPS SEMICONDUCTOR
philips TIP147
B0646
B0648
BU807 PHILIPS SEMICONDUCTOR
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philips BDV64A
Abstract: BDX67
Text: N AflER P H I L I P S / D I S C R E T E ESE D • bb53T31 DOltjEl? b ■ T - £ 7 -3-? Power Devices LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN PNP PACKAGE OUTLINE fC (D C )(1) V CE0 MINIMUM hpg at f(* ^ (ty p O a t V C E(s»t)
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bb53T31
TIP110
TIP111
TIP112
TIP115
TIP116
TIP117
O-220AB
BD679
BD681
philips BDV64A
BDX67
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pj 956
Abstract: No abstract text available
Text: SILICON NPN/PNP EPITAXIAL TYPE MP4006 DARLINGTON POWER TRANSISTOR 4 IN 1 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. 2 5 .2 ± 0 .2 . Small Package by Full Molding. (SIP 10 Pin)
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MP4006
pj 956
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Diode GP 514
Abstract: pnp 500v KA9282B DARLINGTON 1A 60V npn to92 2N3904TA DARLINGTON 3A 100V npn to92 8A SOT23 SOT23 NPN KA9220B diode 60V 8A
Text: PRODUCT GUIDE PART NO. 2N3904TA/3904 2N3906/3906AT 2N4400/4401 2N4402/4403 2N6515 2N6517 2N652Q KSP05/06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP55 KSP92 KST06TF KST10TF KST14TF KST2222ATF KST2907ATF KST3904TF KST3906TF KST42TF KST4401TF KST4403TF
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2N3904TA/3904
2N3906/3906AT
2N4400/4401
2N4402/4403
2N6515
2N6517
2N652Q
KSP05/06
KSP10
KSP13
Diode GP 514
pnp 500v
KA9282B
DARLINGTON 1A 60V npn to92
2N3904TA
DARLINGTON 3A 100V npn to92
8A SOT23
SOT23 NPN
KA9220B
diode 60V 8A
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800H
Abstract: MP4006 transistor 2A pnp
Text: TOSHIBA MP4006 TO SH IBA PO W E R TRANSISTOR M O D ULE SILICON NPN & PNP EPITA XIAL TYPE DARLINGTON PO W E R TRANSISTOR 4 IN 1 M P4006 HIGH POWER SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S U n it in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE
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MP4006
800H
MP4006
transistor 2A pnp
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Untitled
Abstract: No abstract text available
Text: 0043592 A P I E LE CTRONICS INC _. _13A0Q67 3 VI ELECTRONICS INC 13 DE J □□43Scia □OOODb? 2 A P I U W NPN and PNP Complementary Silicon Planar Power Transistors continued . A bPRA ,UE ClECTR C S'JQS OlARY 2A TO-5 TO-66 BV ceo NPN
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13A0Q67
2N3766
2N3740
PG1050
PG2050
PG1001
PG2001
2N3767
2N3741
PG1051
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DARLINGTON 3A 100V npn array
Abstract: No abstract text available
Text: SILICON NPN/PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 MP4005 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. FEATURES • Small Package by Full Molding. (SIP 10 Pin)
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MP4005
DARLINGTON 3A 100V npn array
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Untitled
Abstract: No abstract text available
Text: MP4503 SILICON N P N /P N P EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, 3 1.5± Q.<- o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. FEATURES • Package with Heat Sink Isolated to Lead.
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MP4503
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DARLINGTON 3A 100V npn
Abstract: complementary npn-pnp power transistors 2N3766 PT7015 complementary npn-pnp PG2051 2N3767 TO66 PLASTIC package 7014 pnp and npn
Text: 0043592 A P I A P I ELECTRONI CS !► ELECTRONICS INC 13 A00 6 7 I NC 13 A iiPRÄ ,U £ ELECTH C S'JQS DIARY DE 3 -0/_. - J □ D Ll 3 5 cia QDODDt,? E f~ - NPN and PNP Complementary Silicon Planar Power Transistors continued 2A B V ceo TO-66 TO-5 TO-46
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D435CIB
2N3766
2N3740
PG1050
PG2050
PG1001
PG2001
2N3767
2N3741
PG1051
DARLINGTON 3A 100V npn
complementary npn-pnp power transistors
PT7015
complementary npn-pnp
PG2051
TO66 PLASTIC package
7014
pnp and npn
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DARLINGTON 3A 100V npn array
Abstract: No abstract text available
Text: MP6901 SILICON NPN/PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. FEATURES • Package with Heat Sink Isolated to Lead. (SIP 12 Pin)
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MP6901
DARLINGTON 3A 100V npn array
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MP4006 TO SHIBA POWER TRANSISTOR MODULE SILICON NPN & PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 MP4006 HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. INDUSTRIAL APPLICATIONS U nit in mm
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MP4006
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Darlington Silicon Power Transistor fzt603
Abstract: darlington transistor sot223 5A LC-04A
Text: SOT223 NPN SILICON PLANAR M EDIU M POWER DARLINGTON TRANSISTOR ISSUE 3 -NOVEMBER 1995_ FEATURES * 2 A continuous current * Useful hFE up to 6 A * Fast Sw itching P A R T M A R K IN G D ETA IL - DEVIC E TY PE IN FULL ABSOLUTE M A X IM U M RATINGS.
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OT223
100mA,
20MHz
500mV,
300ms.
FZT603
Darlington Silicon Power Transistor fzt603
darlington transistor sot223 5A
LC-04A
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