Untitled
Abstract: No abstract text available
Text: SEMiX 202GB066HDs Absolute Maximum Ratings Symbol Conditions IGBT - ' $ - &5( ) $#! '()2 % 4. '5( 6 7. ) '.( 6 8. 6 9 '. - &(. ) 4 > '( ) '@. 6 7. ) '&. 6 8. 6 &. 6 4. 6 1 8. * A &5(
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202GB066HDs
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Untitled
Abstract: No abstract text available
Text: SKM 200GB123D Absolute Maximum Ratings Symbol Conditions IGBT *6 &* &*9 :6 .< . . 3 14 84 5* 3 / .=69+.& > . Trench IGBT Modules SKM 200GB123D & &(9 . 3 14 82 5* 3 / &( 3 /2 B @B .< 3 /42 5* /122 122 /82 022
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200GB123D
200GB123D
200GAL123D
200GAR123D
200GB123D1
GA66G
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMiX 403GB128D Absolute Maximum Ratings Symbol Conditions IGBT / ', - 2 / 1, - 267 ',-. ! % 1'( 3'( $ 4( - 5( $ 3,( $ :'( 1( ? ', - 53( $ 4( - '5, $ 3,( $ '( $ ;( $ 3( AAA B 1,(
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403GB128D
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Untitled
Abstract: No abstract text available
Text: SEMiX 101GD066HDs Absolute Maximum Ratings Symbol Conditions IGBT - ' $ - &5( ) $#! '()2 % 4. &6. 7 8. ) &.( 7 '. 7 9 '. - &(. ) 4 > '( ) &(. 7 8. ) &&. 7 '. 7 (. 7 4. 7 1 6. * @ &5(
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101GD066HDs
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMiX 302GB066HDs Absolute Maximum Ratings Symbol Conditions IGBT - ' $ - &5( ) $#! '()2 % 4. 67. 8 7. ) '7( 8 4. 8 9 '. - &(. ) 4 = '( ) ?'. 8 7. ) 6&. 8 4. 8 &?. 8 4. 8 1 ?. * @ &5(
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302GB066HDs
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMiX 452GB176HD Absolute Maximum Ratings Symbol Conditions IGBT . + , 1 . '+ , 156 )+,- # '0( 23+ " 4( , 3'( " 8( " : )( . ')+ , '( > )+ , 34+ " 4( , )8( " 8( " )( " 8( " A 2( @@@ B '+(
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452GB176HD
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Untitled
Abstract: No abstract text available
Text: SEMiX 151GD066HDs Absolute Maximum Ratings Symbol Conditions IGBT - ' $ - &5( ) $#! '()2 % 4. '. 6 7. ) &(. 6 8. 6 9 '. - &(. ) 4 = '( ) ''. 6 7. ) &4. 6 8. 6 ?7. 6 4. 6 1 @. * A &5( &'(
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151GD066HDs
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PDF
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1E22
Abstract: No abstract text available
Text: SKM 400GA173D . 6 13 7* # Absolute Maximum Ratings Symbol Conditions IGBT Values .9 6 13 7* *8 &* /422 .9 6 /32 7* &*= . 6 13 7* ;2 + . 6 <2 7* 022 + $22 + &*=61%&* ? 12 >8 SEMITRANS 4 IGBT Modules * 6 /122 @
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400GA173D
400GA173D
400GA173D1S
1E22
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PDF
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Untitled
Abstract: No abstract text available
Text: SKM 400GA173D . 6 13 7* # Absolute Maximum Ratings Symbol Conditions IGBT Values .9 6 13 7* *8 &* /422 .9 6 /32 7* &*= . 6 13 7* ;2 + . 6 <2 7* 022 + $22 + &*=61%&* ? 12 >8 SEMITRANS 4 IGBT Modules * 6 /122 @
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400GA173D
400GA173D1S
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PDF
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SKM200GAL123D
Abstract: No abstract text available
Text: SKM 200GB123D . 5 16 7* # Absolute Maximum Ratings Symbol Conditions IGBT *8 .9 5 16 7* &* .9 5 /62 7* /122 122 + . 5 ;6 7* /;2 + 022 + > 12 /2 B . 5 16 7* 122 + . 5 ;2 7* /02 + 022 + .9 5 /62 7* /DD2 + . 5 16 7*
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200GB123D
200GAL123D
200GAR123D
SKM200GAL123D
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PDF
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Untitled
Abstract: No abstract text available
Text: SKM 200GB123D . 5 16 7* # Absolute Maximum Ratings Symbol Conditions IGBT *8 .9 5 16 7* &* .9 5 /62 7* /122 122 + . 5 ;6 7* /;2 + 022 + > 12 /2 B . 5 16 7* 122 + . 5 ;2 7* /02 + 022 + .9 5 /62 7* /DD2 + . 5 16 7*
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200GB123D
200GAL123D
200GAR123D
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PDF
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300GB
Abstract: No abstract text available
Text: SKM 300GB066D Absolute Maximum Ratings Symbol Conditions IGBT % % < 5" SEMITRANSTM 3 Trench IGBT Modules SKM 300GB066D Target Data Features !"
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300GB066D
300GB
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PDF
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Untitled
Abstract: No abstract text available
Text: SKM 400GB066D Absolute Maximum Ratings Symbol Conditions IGBT % % < 5" SEMITRANSTM 3 Trench IGBT Modules SKM 400GB066D Target Data Features !"
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400GB066D
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M12650EJ5V0DS00
Abstract: PD45128163G5-A10-9JF PD45128163G5-A80-9JF PD45128441 PD45128441G5-A10-9JF uPD45128441G5-A10B-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF uPD45128841G5-A10B-9JF PD45128841G5-A80-9JF
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 word × bit × bank , respectively.
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PD45128441,
128M-bit
728-bit
54-pin
M12650EJ5V0DS00
PD45128163G5-A10-9JF
PD45128163G5-A80-9JF
PD45128441
PD45128441G5-A10-9JF
uPD45128441G5-A10B-9JF
PD45128441G5-A80-9JF
PD45128841G5-A10-9JF
uPD45128841G5-A10B-9JF
PD45128841G5-A80-9JF
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E014
Abstract: upd4564163g5a10b
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 word × bit × bank , respectively.
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PD4564441,
64M-bit
864-bit
54-pin
M01E0107
E014
upd4564163g5a10b
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PDF
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350GD
Abstract: No abstract text available
Text: SKiM 350GD128DM Absolute Maximum Ratings Symbol Conditions IGBT / 0 ( (6 /0 : !" SKIM 4 SKiM 350GD128DM SKiM 350GD128DM Preliminary Data Features ! "
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350GD128DM
350GD128DM
350GD
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NEC MEMORY
Abstract: p77 cac uPD4564441
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 word × bit × bank , respectively.
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Original
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PD4564441,
64M-bit
864-bit
54-pin
NEC MEMORY
p77 cac
uPD4564441
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 word × bit × bank , respectively.
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PD45128441,
128M-bit
728-bit
54-pin
M01E0107
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PDF
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uPD481850GF-A12-JBT
Abstract: dba1 PD48
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD481850 for Rev.L 8 M-BIT SYNCHRONOUS GRAM 128K-WORD BY 32-BIT BY 2-BANK Description The µPD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits × 2 banks random access port.
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PD481850
128K-WORD
32-BIT
PD481850
100-pin
uPD481850GF-A12-JBT
dba1
PD48
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PDF
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MS82V16520
Abstract: QFP100-P-1420-0
Text: FEDS82V16520-04 ¡ Semiconductor MS82V16520 This version: Feb. 2000 Previous version: Jul. 1999 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32
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FEDS82V16520-04
MS82V16520
144-Word
32-Bit
MS82V16520
QFP100-P-1420-0
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PDF
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db3 bl
Abstract: dba1 MAKING A10 BGA QFP100-P-1420-0 MS82V16520
Text: E2L1056-39-72 ¡ Semiconductor MS82V16520 ¡ Semiconductor This version: Jul. 1999 MS82V16520 Previous version: Sep. 1998 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32
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Original
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E2L1056-39-72
MS82V16520
144-Word
32-Bit
MS82V16520
db3 bl
dba1
MAKING A10 BGA
QFP100-P-1420-0
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PDF
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Untitled
Abstract: No abstract text available
Text: Pr E2L0056-28-91 el im y 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32 bits ¥ 2 banks. This device can operate up to 166 MHz by using synchronous interface. In addition, it has 8-column
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E2L0056-28-91
MS82V16520
144-Word
32-Bit
MS82V16520
QFP100-P-1420-0
65-BK4
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PDF
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PENTODE pe1-100
Abstract: philips 7560 PE1/100 88C0 amv j hf
Text: PHILIPS PE 1/100 PENTODE for use as H.F. and L.F. amplifier PENTHODE pour utilisation en amulificatrice H.F. et B.F. PENTODE zur Verwendung als H.F. und N.F. Verstärker : oxide-coated : oxyde : Oxyd Cathode Cathode Kathode Heating : indirect Chauffage : indirect
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OCR Scan
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PE1/100
PENTODE pe1-100
philips 7560
PE1/100
88C0
amv j hf
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PDF
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DL94
Abstract: uma* philips 1AV Series KS 0302 8218 pins 10 28L-2 NA1211 M9520 2S1251
Text: P H IL IP S DL 94 OUTPUT PENTODE for battery receivers PENTHODE DE SORTIE pour des appareils batterie ENDPENTODE für Batteriegeräte Heating: direct by battery current, rectified A.C. or D.C.; series or parallel supply Chauffage: direct par courant batterie,C.A. redressé
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PDF
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