Untitled
Abstract: No abstract text available
Text: ADP5310READJ-EVALZ User Guide UG-824 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the ADP5310 Step-Down Regulator FEATURES GENERAL DESCRIPTION 700 nA ultralow quiescent current
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ADP5310READJ-EVALZ
UG-824
ADP5310
UG13028-0-4/15
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PDF
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BTS 824 E
Abstract: BTS 824 a diode zener ZL 27 siemens functional profet siemens functional description profet 824 mosfet 824 10 pins siemens Requirements for Power MOSFET connected in parallel diode 824
Text: Target Datasheet BTS 824 Smart High-Side Power Switch Four Channels: 4 x 90mΩ Status Feedback Product Summary Operating Voltage Vbb on Active channels On-state Resistance RON Nominal load current IL(ISO) Current limitation IL(SCr) Package P-DSO-20-10 (Power SO 20)
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Original
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P-DSO-20-10
1999-Sep-01
BTS 824 E
BTS 824 a
diode zener ZL 27
siemens functional profet
siemens functional description profet
824 mosfet
824 10 pins
siemens Requirements for Power MOSFET connected in parallel
diode 824
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PDF
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MTO-3p
Abstract: 824 mosfet 2SK2177
Text: Power MOSFET V X -II series E-pack SMD N-Channel, Enhancement type TO-220 MTO-3P Electrical Characteristics Absolute Maximum Ratings Type No. Tch [°C] [V ] V gss Io Pt RostON) (max) [V ] CA] [W] [Q ] [pF] [pF] [nS] [nS] 7 4 140 220 13 17 35 40 70 2.3 400
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OCR Scan
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O-220
2SK2177
O-220
STO-220
FTO-220
STO-220
MTO-3p
824 mosfet
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PDF
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oni 350
Abstract: No abstract text available
Text: Power MOSFET r:C E-pack SMD V X -II series TO-220 ÿ U / " STO-220 (SMD) ITO-3P MTO-3P MTO-3L N-Channel. Enhancement type Electrical Characteristics Absolute Maximum Ratings toff (typ) V gss Id Pt (max) r c ] [V ] [V ] [A ] [W ] [O ] [pF] [pF] [ns] [ns]
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OCR Scan
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O-220
STO-220
O-220
STO-220
FTO-220
oni 350
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PDF
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2SK2177
Abstract: No abstract text available
Text: Power MOSFET msmmm E-pack SMD TO-220 N-Channel, Enhancement type Absolute Maximum Ratings Electrical Characteristics (max) C«, (typ) (typ) t«, (typ) (typ) [pF] [pF] [ns] [ns] R d S(ON) Type No. Tch V dss Vgss Id Pt re ] [V ] [V ] [A ] [W ] [Q ] totf 2SK2177
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OCR Scan
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2SK2177
O-220
O-220
STO-220
FTO-220
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PDF
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Untitled
Abstract: No abstract text available
Text: Pow er MOSFET V/ h . ‘j E-pack SMD HVX-H series // TO-220 STO-220 (SMD) MTO-3P FTO-220 N-Channel, Enhancement type Absolute Maximum Ratings Type No. Tch V dss V gss Id Pt rc ] [V ] [V] [A ] [W ] 2SK2663 2664 2665 •s * h 2666 2667 - G * C rss ton toff
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OCR Scan
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O-220
STO-220
FTO-220
2SK2663
O-220
STO-220
FTO-220
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PDF
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Untitled
Abstract: No abstract text available
Text: Power MOSFET HVX- Il series E-pack SMD N-Channel, Enhancement type TO-220 FTO-220 Electrical Characteristics Absolute Maximum Ratings Pi (max) Ct. (typ) [A] [W ] [9 3 [pF] [pF] 1 10 50 14.0 4.7 230 3 630 5 16 3 3 50 30 4.7 4.7 630 16 40 40 630 16 40 R dsìo n )
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OCR Scan
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O-220
FTO-220
O-220
STO-220
FTO-220
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PDF
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Untitled
Abstract: No abstract text available
Text: Power MOSFET E-pack SMD HVX- II series TO-220 STO-220 (SMD) ITO-3P FTO-220 N-Channel, Enhancement type Absolute Maximum Ratings Type No. 2SK2663 2664 2665 2666 2667 2668 2669 2670 2671 2672 2673 2674 2675 2676 2677 2333 Electrical Characteristics R d s (on )
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OCR Scan
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O-220
STO-220
FTO-220
T0220
STO-220
FTO-220
O-220
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PDF
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SKY85703
Abstract: SKY77758
Text: New Products Spring 2014 Table of Contents New Products Featured New Products by Market Smartphones, Handsets and Tablets . . . . . . . 3 Consumer Networking . . . . . . . . . . . . . . . . . . 5 Smart Energy Solutions . . . . . . . . . . . . . . . . . . 7
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BRO399-14B
SKY85703
SKY77758
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PDF
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KY 719
Abstract: 122JK TB163TK TB143TK
Text: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75
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OCR Scan
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2SK1973F5
2SK2041
2SK2042
2SK2094F5
2SK2103
2SA1036K
2SA1037AK
2SA1037AKLN
2SA1455K
RU101
KY 719
122JK
TB163TK
TB143TK
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PDF
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Si7440DP
Abstract: No abstract text available
Text: SPICE Device Model Si7440DP Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7440DP
0-to-10V
12-Aug-02
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PDF
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NS4150
Abstract: Si7440DP
Text: SPICE Device Model Si7440DP Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si7440DP
24-May-04
NS4150
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PDF
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shd225452
Abstract: IRF52
Text: SENSITRON SEMICONDUCTOR SHD225452 TECHNICAL DATA DATA SHEET 4102, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.07 Ohm, -34A MOSFET Fast Switching Low RDS on Electrically Equivalent to IRF5210 Add an “S” to the end of the part number for S-100 screening, SHD225452S
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SHD225452
IRF5210
S-100
SHD225452S
SHDC225452
SHD225452
O-254
IRF52
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PDF
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0.1 uf Ceramic Capacitors 104
Abstract: RuGGed Chip filter capacitor 155 k 630 a
Text: VJ Series RuGGed Multilayer Ceramic Chip Capacitors New RuGGed Capacitors for Power Supply Applications FEATURES • Rugged, surface-mountable, multilayer ceramic capacitors • At 120 Hz, ESR of 100-V-rated RuGGed chip is typically less than a quarter that of an aluminum electrolytic capacitor with the same capacity and
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Original
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00-V-rated
VJ2225
VJ1812
01-Oct-04
VMN-PT9060-0410
0.1 uf Ceramic Capacitors 104
RuGGed Chip
filter capacitor 155 k 630 a
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PDF
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3N163-64
Abstract: MOSFET 3N 200
Text: P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch _ ^ mm « /« Iä W I# . C Q IO Q IC M \J CORPORATION 3N163/3N164 ABSOLUTE MAXIMUM RATINGS N o te l (Ta = 25°C unless otherwise specified) FEATURES • • • • Very High Input Impedance
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OCR Scan
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3N163/3N164
3N163
-10mA,
3N163
3N164
-10mA
200ns
10Mfl
3N163-64
MOSFET 3N 200
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PDF
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rfp50n06 equivalent
Abstract: BUZ71A equivalent buz11 equivalent BUZ71 equivalent IRF9540 equivalent RFP12N10L equivalent irf740 equivalent ICM755 IRF640 equivalent 555 timer for lm555cn
Text: Intersil Timers, Oscillators, Rectifiers and MOSFETs Timers/Oscillators Mfr.Õs Type Max. Output Frequency Astable Description Package Type LM555CN Timer for Time Delays and Oscillator Applications 10 KHz (Typ.) +4.5 V to +18 V @ 15 mA 8 Lead PDIP ICM7555IBA
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LM555CN
ICM7555IBA
ICM7555IPA
ICM7556IPD
ICM7555,
ICM7242IPA
250AB
IRF630
O-220AB
RFP50N06
rfp50n06 equivalent
BUZ71A equivalent
buz11 equivalent
BUZ71 equivalent
IRF9540 equivalent
RFP12N10L equivalent
irf740 equivalent
ICM755
IRF640 equivalent
555 timer for lm555cn
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PDF
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3N163
Abstract: 3N163-64 3N164
Text: P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch 3N163/3N164 ABSOLUTE MAXIMUM RATINGS Note 1 (Ta = 25°C unless otherwise specified) FEATURES • • • • Very High Input Impedance High Gate Breakdown Fast Switching Low Capacitance Drain-Source or Drain-Gate Voltage
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OCR Scan
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3N163/3N164
to-72
3N163
3N164.
3N163.
3N164
-10mA
200ns
3N163
3N163-64
3N164
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PDF
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Untitled
Abstract: No abstract text available
Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are
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GSM3406AS,
OT-23
GSM3406ASJZF
OT-23)
Lane11
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PDF
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Untitled
Abstract: No abstract text available
Text: 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power
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GSM4535,
-40V/-6
-40V/-5
GSM4535SF
Lane11
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PDF
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Untitled
Abstract: No abstract text available
Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM9101, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart
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GSM9101,
-20V/-2
OT-23
Lane11
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PDF
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Untitled
Abstract: No abstract text available
Text: 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4637, P-Channel enhancement mode OSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power
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Original
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GSM4637,
-40V/-6
-40V/-5
GSM4637SF
Lane11
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PDF
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Untitled
Abstract: No abstract text available
Text: 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM9102B, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone
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Original
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GSM9102B,
OT-23
Lane11
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PDF
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Untitled
Abstract: No abstract text available
Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power
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GSM4210,
GSM4210SF
Lane11
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PDF
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Untitled
Abstract: No abstract text available
Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone
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Original
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GSM2301A,
-20V/-2
OT-23
Lane11
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PDF
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