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    82N60P Search Results

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    82N60P Price and Stock

    Littelfuse Inc IXFN82N60P

    MOSFET N-CH 600V 72A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN82N60P Tube 358 1
    • 1 $35.98
    • 10 $27.642
    • 100 $35.98
    • 1000 $35.98
    • 10000 $35.98
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    RS IXFN82N60P Bulk 8 Weeks 10
    • 1 -
    • 10 $41.8
    • 100 $41.8
    • 1000 $41.8
    • 10000 $41.8
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    Littelfuse Inc IXFL82N60P

    MOSFET N-CH 600V 55A ISOPLUS264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFL82N60P Tube 1
    • 1 $32.82
    • 10 $32.82
    • 100 $32.82
    • 1000 $32.82
    • 10000 $32.82
    		Buy Now
    Newark IXFL82N60P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $22.16
    • 10000 $22.16
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    RS IXFL82N60P Bulk 8 Weeks 25
    • 1 -
    • 10 -
    • 100 $32.7
    • 1000 $32.7
    • 10000 $32.7
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    Littelfuse Inc IXFB82N60P

    MOSFET N-CH 600V 82A PLUS264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFB82N60P Tube 1
    • 1 $27.45
    • 10 $27.45
    • 100 $19.4304
    • 1000 $19.4304
    • 10000 $19.4304
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    Newark IXFB82N60P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $20.37
    • 10000 $20.37
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    RS IXFB82N60P Bulk 8 Weeks 25
    • 1 -
    • 10 -
    • 100 $30.05
    • 1000 $30.05
    • 10000 $30.05
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    IXYS Corporation IXFN82N60P

    MOSFET Modules DIODE Id82 BVdass600
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFN82N60P 150
    • 1 $35.98
    • 10 $27.64
    • 100 $27.02
    • 1000 $27.02
    • 10000 $27.02
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    Newark IXFN82N60P Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    TTI IXFN82N60P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $27.02
    • 10000 $27.02
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    TME IXFN82N60P 1
    • 1 $41.71
    • 10 $33.1
    • 100 $33.1
    • 1000 $33.1
    • 10000 $33.1
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    IXYS Corporation IXFB82N60P

    MOSFETs 82 Amps 600V 0.75 Ohm Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFB82N60P
    • 1 -
    • 10 -
    • 100 -
    • 1000 $20.09
    • 10000 $20.09
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    TTI IXFB82N60P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $19.69
    • 10000 $19.69
    		Buy Now
    TME IXFB82N60P 1
    • 1 $26.37
    • 10 $23.64
    • 100 $22.07
    • 1000 $22.07
    • 10000 $22.07
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    82N60P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFB 82N60P VDSS = 600 V ID25 = 82 A RDS on ≤ 75 mΩ Ω ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 82N60P PLUS264TM

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFB 82N60P VDSS = 600 V ID25 = 82 A RDS on ≤ 75 mΩ Ω ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 82N60P PLUS264TM

    80S23

    Abstract: No abstract text available
    Text: IXFL 82N60P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS = 600 V ID25 = 82 A Ω RDS on ≤ 78 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF 82N60P ISOPLUS264TM 80S23

    41a 049

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFB 82N60P VDSS = 600 V ID25 = 82 A Ω RDS on ≤ 75 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 82N60P PLUS264TM 41a 049

    IXFN 82N60P

    Abstract: IXFN82N60P 82N60P
    Text: IXFN 82N60P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous ±30


    Original     		PDF 82N60P IXFN 82N60P IXFN82N60P 82N60P

    82N60P

    Abstract: uA78 41a 034
    Text: IXFL 82N60P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS = 600 V ID25 = 82 A Ω RDS on ≤ 78 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF 82N60P ISOPLUS264TM 82N60P uA78 41a 034

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2