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    82S126 Search Results

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    82S126 Price and Stock

    Vishay Intertechnologies RWR82S1260FRB12

    EGS-2 126 1% RWR82S1260FR B12 - Bulk (Alt: RWR82S1260FRB12)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RWR82S1260FRB12 Bulk 100
    • 1 -
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    • 100 $4.3798
    • 1000 $4.3798
    • 10000 $4.3798
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    Newark RWR82S1260FRB12 Bulk 100
    • 1 -
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    • 100 $6.58
    • 1000 $5.82
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    Teledyne e2v 82S126A/BEA

    82S126A/BEA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Arrow Electronics 82S126A/BEA 135 99 Weeks 1
    • 1 $255.34
    • 10 $172.97
    • 100 $134.05
    • 1000 $134.05
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    Philips Semiconductors N82S126N

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics N82S126N 1
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    Signetics 82S126/BEA

    IC,PROM,256X4,TTL,DIP,16PIN,CERAMIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 82S126/BEA 9
    • 1 $26
    • 10 $26
    • 100 $26
    • 1000 $26
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    82S126/BEA 5
    • 1 $16.9
    • 10 $16.9
    • 100 $16.9
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    82S126/BEA 1
    • 1 $39.4266
    • 10 $39.4266
    • 100 $39.4266
    • 1000 $39.4266
    • 10000 $39.4266
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    Philips Semiconductors 82S126/BEA

    IC,PROM,256X4,TTL,DIP,16PIN,CERAMIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 82S126/BEA 4
    • 1 $39.4266
    • 10 $39.4266
    • 100 $39.4266
    • 1000 $39.4266
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    82S126 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    82S126 Philips Semiconductors 1K BIT TTL BIPOLAR PROM Scan PDF
    82S126 Signetics 256 x 4 TTL PROM Memory Scan PDF
    82S126 Signetics Bipolar Memory IC Data Book 1982 Scan PDF
    82S126 Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    82S126 Signetics Mos and Bipolar ROM / PROM 1975 Scan PDF
    82S126A Unknown TTL Data Book 1980 Scan PDF
    82S126A Philips Semiconductors 256 x 4 TTL PROM Memory Scan PDF
    82S126A Philips Semiconductors V(cc): +7.0V V(in): +5.5V 1Kbit TTL bipolar PROM. For phototyping/volume production, sequential conrollers, format conversion, hardwired algorithms, etc. Scan PDF
    82S126A Signetics 1K-Bit TTL Bipolar PROM (256 x 4) Scan PDF
    82S126A/BEA Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    82S126A/BEA Philips Semiconductors 1 K-bit TIL bipolar PROM (256 x 4) Scan PDF
    82S126A/BFA Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    82S126A/BFA Philips Semiconductors 1 K-bit TIL bipolar PROM (256 x 4) Scan PDF
    82S126/BEA Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    82S126/BEA Philips Semiconductors 1 K-bit TTL bipolar PROM (256 x 4) Scan PDF
    82S126/BFA Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    82S126/BFA Philips Semiconductors 1 K-bit TTL bipolar PROM (256 x 4) Scan PDF
    82S126N Philips Semiconductors V(cc): +7.0V V(in): +5.5V 1Kbit TTL bipolar PROM. For phototyping/volume production, sequential conrollers, format conversion, hardwired algorithms, etc. Scan PDF

    82S126 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    prom 256x4 bit

    Abstract: prom 82S126 82S126 82S129 82S129/BEA GDFP2-F16 GDIP1-T16 32 x 32 matrix
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 82S126 82S129 1K-bit TTL bipolar PROM 256x4 • Random logic • Code conversion FEATURES • Address access time: 60ns max • Input loading: -150µA max • On-chip address decoding


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    PDF 82S126 82S129 256x4) 82S126 82S129 82S126: 82S129: 500ns prom 256x4 bit prom 82S126 82S129/BEA GDFP2-F16 GDIP1-T16 32 x 32 matrix

    prom 256x4 bit

    Abstract: GDIP1-T16 82S129A/BEA 82S126A 82S129A GDFP2-F16 bipolar PROM 32 x 32 matrix
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 82S126A 82S129A 1K-bit TTL bipolar PROM 256x4 FEATURES DESCRIPTION • Address access time: 35ns max • Input loading: -150µA max • On-chip address decoding • Output options:


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    PDF 82S126A 82S129A 256x4) 82S126A 82S129A 82S126A: 82S129A: 500ns prom 256x4 bit GDIP1-T16 82S129A/BEA GDFP2-F16 bipolar PROM 32 x 32 matrix

    82S126

    Abstract: N82S129 N82s129 data sheet 82S129 N82S126 70MA120 N82S126N signetics 82S129
    Text: Philips Components–Signetics ECN No. 86487 Date of Issue November 11, 1986 82S126 82S129 Status Product Specification 1K-bit TTL bipolar PROM Document No. 853–0148 Memory Products DESCRIPTION FEATURES The 82S126 and 82S129 are field programmable, which means that


    Original
    PDF 82S126 82S129 82S126 82S129 82S126) 82S129) N82S129 N82s129 data sheet N82S126 70MA120 N82S126N signetics 82S129

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    Device-List

    Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
    Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which


    Original
    PDF ALL-11 Z86E73 Z86E83 Z89371 ADP-Z89371/-PL Z8E000 ADP-Z8E001 Z8E001 Device-List cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2

    Untitled

    Abstract: No abstract text available
    Text: 82S126A Signelics 82S 129A IK-Bit TTL B ip o la r P R O M Product Specification Bipolar Memory Products DESCRIPTION FEATURES The 82S126A and 82S129A are field programmable, which means that cus­ tom patterns are immediately available by following the Signetics Generic I fus­


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    PDF 82S126A 82S126A 82S129A S126A

    SIGNETICS* fusing procedure

    Abstract: 82s129 programming N82S129A BIPOLAR PROM PROGRAMMING SPECIFICATION N82S126A N82S126AN N82S129AA generic prom programming signetics Bipolar PROM programming 82S126
    Text: N 8 2 S126A 8 2 S129A i 1 K-Bit TTL Bipolar PROM Product Specification Bipolar Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S126A and 82S129A are field programmable, which means that cus­ tom patterns are immediately available by following the Signetics Generic I fus­


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    PDF 82S126A 82S129A 82S129A 82S129Aof SIGNETICS* fusing procedure 82s129 programming N82S129A BIPOLAR PROM PROGRAMMING SPECIFICATION N82S126A N82S126AN N82S129AA generic prom programming signetics Bipolar PROM programming 82S126

    signetics 82S129

    Abstract: Signetics 82S126 82S126 prom 82S126 1K BIT TTL BIPOLAR PROM OI Bipolar Logic
    Text: Signetics 82S126 82S129 1K-Bit TTL Bipolar PROM Product Specification Military Bipolar Memory Products DESCRIPTION Th e 82S 126 and FEATURES 82S 129 are field APPLICATIONS • Address access time: 60ns max • Prototyping/volume production program mable, which m eans that custom


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    PDF 82S126 82S129 82S126, signetics 82S129 Signetics 82S126 prom 82S126 1K BIT TTL BIPOLAR PROM OI Bipolar Logic

    82s129 programming

    Abstract: 82s126 programming 82S129 N825129 82S126 N82S126 bipolar rom 256*4 S82S129 prom 82S126 signetics 82S129
    Text: • s m n n t i P i : O iy iH - L I U d 1024- b i t b i p o l a r PROGRAMMABLE ROM 256x4 PROM F E B R U A R Y 1975 f i? ç i? R 82S129 DIGITAL 8000 SERIES TTL/MEMORY DESCRIPTION The 82S126 (Open Collector Outputs) and the 82S129 (Tri-State Outputs) are Bipolar 1024-Bit Read Only Mem­


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    PDF 1024-BIT R9Q19R 256x4 82S129 82S126 82S126 82S129 82s129 programming 82s126 programming N825129 N82S126 bipolar rom 256*4 S82S129 prom 82S126 signetics 82S129

    ScansUX82

    Abstract: 82S126A 82S129A GDFP2-F16 GDIP1-T16
    Text: Product specification Philips Semiconductor» Military Bipolar Memory Products 8 2 S 1 2 6 A 1K-bit TTL bipolar PROM 256 x 4 8 2 S 1 2 9 A FEATURES DESCRIPTION • Address access time: 35ns max The 82S126A and 82S129A are field programmable, which means


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    PDF 82S126A 82S129A 82S126A: 82S129A: 500ns ScansUX82 GDFP2-F16 GDIP1-T16

    82S126

    Abstract: 82S129 B2S129 GDFP2-F16 GDIP1-T16 32 x 32 matrix 82S126BEA
    Text: P hilips S e m iconductors M ilita ry B ipolar M em ory Products P ro du ct specification 1 K-bit TTL bipolar PROM 256 x 4 82S126 82S129 FEATURES • Random logic • Address access time: 60ns max • Code conversion • Input loading: -150nA max • On-chip address decoding


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    PDF -150nA 82S126: 82S129 82S126 82S129 82S126 600aC| B2S129 GDFP2-F16 GDIP1-T16 32 x 32 matrix 82S126BEA

    82S129

    Abstract: prom 82S126 signetics handbook 82S126 N82S126 N82S129 256 x 4 TTL PROM Memory with 3-state outputs N82S126N signetics 82S129 Signetics Generic I fusing procedure
    Text: Philips Components-Signetics Document No. 853-0148 ECN No. 86487 Date of Issue November 11,1986 Status Product Specification 8 2 S 1 2 6 8 2 S 1 2 9 1K-bit TTL bipolar PROM Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S126 and 82S129 are field


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    PDF 82S126 82S129 82S129 750SJ, DUT03 82S126) 82S129) prom 82S126 signetics handbook N82S126 N82S129 256 x 4 TTL PROM Memory with 3-state outputs N82S126N signetics 82S129 Signetics Generic I fusing procedure

    N82S126

    Abstract: 82S126 32 x 32 matrix prom 256x4 bit 82S129
    Text: BIPOLAR MEMORY MAY 1982 1024-BIT BIPOLAR PROM 256x4 82S126 (O.C.)/82S129 (T.S.) DESCRIPTION FEATURES The 82S126 and 82S129 are field p ro g ra m ­ mable, w hich means th a t cu sto m patterns


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    PDF 1024-BIT 256x4) 82S126 /82S129 82S126 82S129 N82S126 32 x 32 matrix prom 256x4 bit

    32 x 32 matrix

    Abstract: 256 x 4 TTL PROM Memory with 3-state outputs
    Text: Product specification Philips Semiconductor» Military Bipolar Memory Products 8 2 S 1 2 6 A 1K-bit TTL bipolar PROM 256 x 4 8 2 S 1 2 9 A FEATURES DESCRIPTION • Address access time: 35ns max The 82S126A and 82S129A are field programmable, which means


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    PDF 82S126A: 82S129A: 82S126A 82S129A 711Q6Bb 7110fi2b 32 x 32 matrix 256 x 4 TTL PROM Memory with 3-state outputs

    1CE2

    Abstract: TAA 761 A 82S129A Signetics Generic I fusing procedure
    Text: Signetics 82S126A 82S129A 1K-Bit TTL Bipolar PROM Product Specification Military Bipolar Memory Products DESCRIPTION FEATURES APPLICATIONS The 82S126A and 82S129A are field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing


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    PDF 82S126A 82S129A 82S129A 82S126A, 1CE2 TAA 761 A Signetics Generic I fusing procedure

    N82S126AN

    Abstract: N82S129AN
    Text: 3188 82S126A 82S129A 1K-Bit TTL Bipolar PROM Product Specification Bipolar Memory Products DESCRIPTION FEATURES The 82S126A and 82S129A are field programmable, which means that cus­ tom patterns are immediately available by following the Signetics Generic I fus­


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    PDF 82S126A 82S129A 82S129A devices25V N82S129A N82S126A N82S126AN N82S129AN

    F16 100 HIP

    Abstract: GDFP2-F16 82S126A 82S129A GDIP1-T16 182S12
    Text: P hilips Sem iconductor» Military Bipolar M emory Producto_^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ r o d u c t s p e c i f i c a t l o n ^ 1K-bit TTL bipolar PROM 256 x 4 “ “ 82S126A 82S129A DESCRIPTION FEATURES • O n -ch ip a d d re ss d e co d ing


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    PDF 82S126A 82S129A 82S126A: 82S129A: 82S129A 500ns 711002b F16 100 HIP GDFP2-F16 GDIP1-T16 182S12

    2S126

    Abstract: N82S129AD
    Text: Philips Componenls-Signetics Document No. 8 5 3 -0 1 4 9 ECN No. 960 5 4 Date of Issue M arch 14, 1989 82S126A 82S129A Status P ro du ct S p ecification 1K-bit TTL bipolar PROM M em ory Products DESCRIPTION FEATURES The 8 2 S 1 2 6 A and 82S 12 9 A are field


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    PDF 82S126A 82S129A 750iJ N82S129A N82S126A 82S126A) 82S129A) 2S126 N82S129AD

    MH1SS1

    Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
    Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik


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    PDF

    MB7052

    Abstract: mmI 6300 MB7057 IM5603A AM27S20 mmi 3601 MMI 6301-1 intel 3601 63S141 2S126
    Text: - IO 6 3 0 0 X A m. £ a ísaaes % CC y + > 7 & 1 Î TAAC max ns) TCAC ntax (ns) TOH (ns) TOE max (ns) Z M TOD max (ns) V D D or V C C (V) A (Ta=25’ C) I DD typ (inA) I DD max (mA) I IL/VIIl (•A/V) t)/ M VIL max (V) tu Æ IŒ I IH/VIIH max (mA/V) VIH


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    PDF 63LS140 63LS141 63PS140 63PS141 G3S140 IM5623A M54700 MB7052 MB7057 16PIN mmI 6300 IM5603A AM27S20 mmi 3601 MMI 6301-1 intel 3601 63S141 2S126

    74s288

    Abstract: SIGNETICS 74S188 74S188 74S287 74S474 mmi 6331 74S387 signetics 82s23 H6555 MMI 6349
    Text: S ig n e tic s Memories BIPOLAR M EMORY CROSS R E F E R E N C E AMD' 2700/27 LSOO 2701/27LSÛ 1 27S08/27LS08 27S09/27LS09 27S10 27S11 3101 310 1 A/27S02 93415 93415A 93425 93425A F A IR C H IL D 10149 10144 1 0410 10415 93403 93406 93411 93411A 93415 93415A


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    PDF 82S16 2701/27LS01 82S17 27S08/27LS0Ã 82S23 27S09/27LS09 82S123 27S10 82S126 27S11 74s288 SIGNETICS 74S188 74S188 74S287 74S474 mmi 6331 74S387 signetics 82s23 H6555 MMI 6349

    74S387

    Abstract: 74s288 74S474 74S188 MMI 6381 74S287 27ls09 74S209 MMI 6349 74s201
    Text: Signetics Memories BIPOLAR M EMORY CROSS R E F E R E N C E AMD' 2700/27 LSOO 2701/27LSÛ 1 27S08/27LS08 27S09/27LS09 27S10 27S11 3101 310 1 A/27S02 93415 93415A 93425 93425A F A IR C H IL D 10149 10144 1 0410 10415 93403 93406 93411 93411A 93415 93415A 93417


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    PDF 82S16 2701/27LS01 82S17 27S08/27LS0Ã 82S23 27S09/27LS09 82S123 27S10 82S126 27S11 74S387 74s288 74S474 74S188 MMI 6381 74S287 27ls09 74S209 MMI 6349 74s201

    harris 7611

    Abstract: PB403D 82s126 programming
    Text: N E C ELECTRON IC S IN C 18 BIPOLAR DIGITAL INTEGRATED CIRCUIT s/iPB403C,//PB403D,//PB423C,^PB423D 6427525 N E C E L E C T R O N IC S IN C ' 98D 18044 D 1 0 2 4 B IT B IP O L A R T T L P R O G R A M M A B L E R EA D O N L Y M E M O R Y DESCRIPTION The iiPB403C, /;PB403D fiPB423C and /¿PB423D are high speed, electrically programmable, fully decoded


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    PDF uPB403C uPB403D uPB423C uPB423D iiPB403C, PB403D( fiPB423C PB423D HPB403C, jiPB403D, harris 7611 PB403D 82s126 programming

    N82S129N

    Abstract: 256 x 4 TTL PROM Memory with 3-state outputs 82S126 82S129 N82S126 N82S129
    Text: Philips Components-Signetics Document No. 8 5 3 -0 1 4 8 ECN No. 8 6487 Date of Issue N ove m b e r 11, 1986 Status P ro du ct S pecifica tio n 8 2 S 1 2 6 8 2 S 1 2 9 1K-bit TTL bipolar PROM M em ory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S 12 6 and 82S 12 9 are field


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    PDF 82S126 82S129 82S126) 82S129) N82S129N 256 x 4 TTL PROM Memory with 3-state outputs N82S126 N82S129