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    82S2 Search Results

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    82S2 Price and Stock

    Hammond Manufacturing 1182S24

    PWR XFMR TOROIDAL 500VA CHAS MT
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    DigiKey 1182S24 Box 1 1
    • 1 $128.21
    • 10 $123.941
    • 100 $106.8454
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    Mouser Electronics 1182S24 4
    • 1 $126.28
    • 10 $121.57
    • 100 $106.84
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    Newark 1182S24 Bulk 25 1
    • 1 $131.23
    • 10 $128.67
    • 100 $111.11
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    RS 1182S24 Bulk 2 1
    • 1 $130.77
    • 10 $116.39
    • 100 $116.39
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    Powell Electronics 1182S24 15 1
    • 1 $130.2
    • 10 $120.9
    • 100 $111.36
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    Master Electronics 1182S24
    • 1 $136.5
    • 10 $120.9
    • 100 $109.48
    • 1000 $109.48
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    ITT Interconnect Solutions KPT6E82S23

    CIRCULAR
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    DigiKey KPT6E82S23 Bulk 25
    • 1 -
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    • 100 $276.5
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    Newark KPT6E82S23 Bulk 25
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    Interstate Connecting Components KPT6E82S23
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    Master Electronics KPT6E82S23
    • 1 -
    • 10 $711
    • 100 $279.53
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    Overconn SRL 10182S2B111P1

    SOLENOID VALVE FIELD ATTACHABLE
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    DigiKey 10182S2B111P1 Box 1
    • 1 $1.7
    • 10 $1.445
    • 100 $1.7
    • 1000 $1.17045
    • 10000 $1.05341
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    Overconn SRL 10182S2B091PP1

    SOLENOID VALVE FIELD ATTACHABLE
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    DigiKey 10182S2B091PP1 Box 1
    • 1 $1.7
    • 10 $1.445
    • 100 $1.7
    • 1000 $1.17045
    • 10000 $1.05341
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    JRH Electronics M83723-82S2461N

    AE8 61C 61#20 SKT RECP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey M83723-82S2461N Box 1
    • 1 $314.02
    • 10 $314.02
    • 100 $314.02
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    82S2 Datasheets (68)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    82S208F Signetics 2048/2304-Bit Bipolar RAM Original PDF
    82S21 Signetics 64-Bit Bipolar Write While Read RAM (32 x 2) Original PDF
    82S21 Signetics Bipolar Memory IC Data Book 1982 Scan PDF
    82S210 Signetics 2304-Bit Bipolar RAM Original PDF
    82S210 Signetics Bipolar Memory IC Data Book 1982 Scan PDF
    82S210F Signetics 2048/2304-Bit Bipolar RAM Original PDF
    82S210N Signetics 2048/2304-Bit Bipolar RAM Original PDF
    82S212 Signetics Bipolar Memory IC Data Book 1982 Scan PDF
    82S212 Signetics 2304 BIT BIPOLAR RAM Scan PDF
    82S214 Signetics Mos and Bipolar ROM / PROM 1975 Scan PDF
    82S215 Signetics Mos and Bipolar ROM / PROM 1975 Scan PDF
    82S226 Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    82S226 Signetics Mos and Bipolar ROM / PROM 1975 Scan PDF
    82S226F Signetics 1024 Bit Bipolar ROM Scan PDF
    82S226N Signetics 1024 Bit Bipolar ROM Scan PDF
    82S229 Signetics Mos and Bipolar ROM / PROM 1975 Scan PDF
    82S229F Signetics 1024 Bit Bipolar ROM Scan PDF
    82S229N Signetics 1024 Bit Bipolar ROM Scan PDF
    82S23 Philips Semiconductors 32K x 8 TTL PROM Memory Scan PDF
    82S23 Philips Semiconductors 256-bit TTL bipolar PROM 32 x 8 Scan PDF

    82S2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N82S123AN

    Abstract: 82s123 philips 82S123A N82S123AA 82S23A N82S23A N82S23AD N82S123A 82S123 82S23
    Text: Philips Semiconductors Product specification 256-bit TTL bipolar PROM 32 x 8 DESCRIPTION 82S23A/82S123A FEATURES The 82S23A and 82S123A are field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing procedure. The 82S23A


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    PDF 256-bit 82S23A/82S123A 82S23A 82S123A 82S23A 82S123 82S23 N82S123AN 82s123 philips N82S123AA N82S23A N82S23AD N82S123A 82S123 82S23

    signetics 82S123

    Abstract: signetics 82s23 SIGNETICS* fusing procedure 82S123 82s123 philips N82S123N 82s23 philips 82S23 N82S123 N82S23
    Text: Philips Semiconductors Product specification 256-bit TTL bipolar PROM 32 x 8 DESCRIPTION 82S23/82S123 FEATURES The 82S23 and 82S123 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing procedure. The 82S23


    Original
    PDF 256-bit 82S23/82S123 82S23 82S123 82S23 82S123 signetics 82S123 signetics 82s23 SIGNETICS* fusing procedure 82s123 philips N82S123N 82s23 philips N82S123 N82S23

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR M E M O R Y PRODUCTS £ 2 -£Z lo 2304-BIT BIPOLAR RAM 25 6x 9 DESCRIPTION (P°C to 7 5 °C) s p e c ify N 8 2S 210F o r N and fo r th e m ilita ry te m p e ra tu re ra n g e ( - 5 5 °C to + 1 2 5 °C) s p e c ify S 82S210F. T h e 82S 210 d a ta in p u ts a n d o u tp u ts are


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    PDF 2304-BIT 82S210

    Untitled

    Abstract: No abstract text available
    Text: Signetics Memories - Bipolar Ram C O N N E C TIO N D IA G R A M 82S208 - 2048 Bit Bipolar Ram 256 x 8 G E N E R A L DE SC R IPTIO N The 82S208 data inputs and o u tp u ts are com m o n (com m on I/O ) w ith separate o u tp u t disable (OD) line th a t allow s ease


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    PDF N82S208 82S208

    82S230

    Abstract: 82S231 N82S230N N82S231N Signetics TTL 82S130 S82S23
    Text: Signetics Memories - Bipolar Rorn 82S230, 82S231 - 2048 Bit Bipolar Rom 512 x 4 C O N N E C T IO N D IA G R A M Both 82S230 and 82S231 devices are available in the commercial and m ilitary temperature ranges. For the commercial temperature range (0 °C to +75°C) specify


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    PDF N82S230, N82S231 82S230 82S231 N82S230/231, S82S230/231. N82S230/231: S82S230/231 N82S230N N82S231N Signetics TTL 82S130 S82S23

    74S189

    Abstract: 74818 s189 82S25
    Text: BIPOLAR M E M O R Y DIVISION M AY 1982 64-BIT BIPOLAR SCRATCH PAD MEMORY 16x4 82S25 (O.C.), 3101A (O.C.), 54/74S189 (T.S.) ABSOLUTE MAXIMUM RATINGS RATIN G PARAMETER1 Vcc S u p p ly vo ltage V in Input voltage +7 Vdc + 5 .5 Vdc Vdc O u tp u t vo ltage V oh


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    PDF 64-BIT 82S25 54/74S189 Clamp17 -12mA, 54/74S189 54/74S189) 74S189 74818 s189 82S25

    N82S123F

    Abstract: N82S123N N82S23F 82S123 programming N82S23N 82S123 SIGNETICS prom signetics 82S123 n82s123 82S23
    Text: Signetics Mem ories - Bipolar Prom s Programming Signetics P R O M S CONNECTION DIAGRAM PROM programming is available through ITT Gemini for further details please contact your local sales office. 82S23/N82S123 PROM 256 Bit Bipolar GENERAL DESCRIPTION The 82S23 and 82S123 are field programmable, which


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    PDF N82S23/N82S123 82S23 82S123 N82S123F N82S123N N82S23F 82S123 programming N82S23N SIGNETICS prom signetics 82S123 n82s123

    Untitled

    Abstract: No abstract text available
    Text: Signetics 82S212/82S212-40 2304-Bit TTL Bipolar RAM 256 x 9 Product Specification Military Bipolar Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The organization of the 82S212-40 allows byte wide storage of data, including parity. Where parity is not required, the ninth bit


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    PDF 82S212/82S212-40 2304-Bit 82S212-40

    Untitled

    Abstract: No abstract text available
    Text: 82S25-F.N • 3101 A -F.N • 54/74S89-F.N • 54/74S189-F.N DESCRIPTION APPLICATIONS T his fa m ily o f R ead/W rite R andom A ccess M em ories is ideal fo r use in scra tch pad and h igh-speed b u ffe r m em ory ap p lic a tio n s . • Scratch pad memory


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    PDF 82S25-F 54/74S89-F 54/74S189-F 101A-F

    rom 512x8

    Abstract: chip 8205 82S214 8205 A 82S215
    Text: signotics 2048-BIT BIPOLAR ROM 256x8 ROM 4096-BIT BIPOLAR ROM (512x8 ROM) 8204 8205 82S 214) 82S215 DIGITAL 8000 SERIES TTL/MEMORY DESCRIPTION PIN CONFIGURATION T h e 8 2 0 4 / 8 2 S 2 1 4 a n d 8 2 0 5 / 8 2 S 2 1 5 are S c h o ttk y - c la m p e d R e ad


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    PDF 2048-BIT 256x8 4096-BIT 512x8 8204/82S214 8205/82S215 rom 512x8 chip 8205 82S214 8205 A 82S215

    82S200

    Abstract: 82S100 RESISTOR variable 82S201 signetics 82s100
    Text: B2S2A0 T.S.Ì/82S201 ¿P.C. 82S200-I.N • 82S201-I.N DESCRIPTION The 82S200 (tri-state outputs) and the 82S201 (open c o lle c to r outputs) are B ip o la r P rogram m able Lo gic A rrays, c o n ta in in g 48 p ro d u c t term s (AND terms), and 8 sum term s


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    PDF 82S200 /82S201 82S200-I 82S201-I 82S201 16-input 82S200 82S201 82S100 RESISTOR variable signetics 82s100

    82S208

    Abstract: 82S2 33um
    Text: 82S208-F • 82S210-F.N DESCRIPTION The 82S208 and 82S210 data inputs and o u tp u ts are com m on com m on I/O w ith separate output disable (OD) line tha t a l­ low s ease of re a d /w rite operations using a common bus. The a d dress inputs have a latch feature con­


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    PDF 82S208-F 82S210-F 82S208 82S210 82S2 33um

    IC 82S123

    Abstract: N82S23N n82s123n
    Text: Philips C o m p o n e n ts -S ig n e tic s D o c u m e n t N o . 8 5 3 -0 1 54 ECN N o. 86487 Date o f Is s u e N ove m b e r 11, 1986 S ta tu s P roduct S pecification 82S23 82S123 256-bit TTL bipolar PROM M em ory P ro du cts PIN CONFIGURATIONS DESCRIPTION


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    PDF 82S23 82S123 256-bit 82S23: 750i2, IC 82S123 N82S23N n82s123n

    82S230

    Abstract: 82S231
    Text: 82S230-F.N • 82S231-F.N The 82S230 and 82S231 in c lu d e o n -c h ip d e coding and 1 ch ip enable in p u t fo r ease of m em ory expansion. T h ey feature eith er open c o lle c to r or tri-s ta te o u tp u ts fo r o p ti­ m ization of w ord expansion in bused org a n ­


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    PDF 82S230-F 82S231-F 82S230 82S231 N82S230/231, S82S230/231, N82S230/231: S82S230/231:

    26 SIGNETICS

    Abstract: 32X2 32X8 82S21 74181 pin configuration
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 64-BIT BIPOLAR WRITE-WHILE-READ RAM 32 x 2 TIMING DIAGRAMS 2-10 (C on td ) Signetics 82S21 (O.C.) BIPOLAR MEMORY DIVISION MAY 1982 64-BIT BIPOLAR WRITE-WHILE-READ RAM ( 3 2 x 2 ) 82S21 (O .C .) TYPICAL APPLICATION BASIC 8-B IT FULLY BUFFERED A C C U M ULATO R


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    PDF 64-BIT 82S21 82S33 64-B1T 26 SIGNETICS 32X2 32X8 82S21 74181 pin configuration

    74S201

    Abstract: 82S117 8205 cam memory circuit 2102-2 RAM 82s25 rom signetics 2670 82S214 2102 SRAM signetics 2501
    Text: signotics 8204 8205 82S 214 82S215 20 4 8 -B IT BIPOLAR ROM 256x8 ROM ) 4 0 9 6 -B IT B IPOLAR ROM (512x8 ROM ) D IG ITA L 8000 S ER IES T T L / M E M O R Y DESCRIPTION PIN CONFIGURATION The 8 2 0 4 /8 2 S 2 1 4 and 8 2 0 5 /8 2 S 2 1 5 are S ch ottk y -c la m p e d


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    PDF 2048-BIT 256x8 4096-BIT 512x8 8204/82S214 8205/82S215 25L01 21L02 74S201 82S117 8205 cam memory circuit 2102-2 RAM 82s25 rom signetics 2670 82S214 2102 SRAM signetics 2501

    bipolar rom 256*4

    Abstract: prom 256x4 bit signetics 1016 82S226 82S229
    Text: sggnotiBS 1024-BIT BIPOLAR READ ONLY MEMORY 256x4 ROM FEBRUARY 1975 82S226 82S229 DIGITAL 8000 SERIES TTL/MEMORY DESCRIPTION PIN CONFIGURATION Th e 82S226 (Open Collector Outputs) and the 82S229 (Tri-State Outputs) are Bipolar 1024-Bit Read O n ly Mem­


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    PDF 1024-BIT 256x4 82S226 82S229 82S226 82S229 82S126/129, bipolar rom 256*4 prom 256x4 bit signetics 1016

    82s100

    Abstract: 82S200
    Text: APPLICATIONS* • • • • • • • • • • • • • The 82S200 and 82S201 are fu lly TTL com­ patible, and include chip enable control for expansion of input variables, and output inhibit. They feature either open collector or tri-state outputs for ease of expansion of


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    PDF 82S200 82S201 16input 82S200 82S201 82S100-I 82S101-I 82s100

    82S123n

    Abstract: a4nj 2s123 82s23 IC 82S123
    Text: Philips Components-Signetics ECN No. 86487 Date of Issue N ove m b e r 11, 1986 82S23 82S123 Status P roduct S pecification 256-bit TTL bipolar PROM Document No. 8 5 3 -0 1 54 M em ory P roducts DESCRIPTION FEATURES The 82S 23 and 8 2S 123 are field program m able, w hich m eans that


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    PDF 82S23 82S123 256-bit 82S123n a4nj 2s123 IC 82S123

    82S23B

    Abstract: 82s123b "Bipolar PROM" Signetics Generic I fusing procedure
    Text: 82S23B, 82S123B Signetics 256-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES APPLICATIONS The 82S23B and 82S123B are field-programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing


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    PDF 82S23B, 82S123B 256-Bit 82S23B 82S123B -150jxA "Bipolar PROM" Signetics Generic I fusing procedure

    prom 2708

    Abstract: S82S2708F 82S2708 S82S2708 1024x8 PROM p-iris control
    Text: MAY « 8 2 BIPOLAR M EM O RY DIVISION 8 192-BIT BIPOLAR PROM 1024 X 8 82S2708 (T.S.) PIN CONFIGURATION DESCRIPTION FEATURES The 82S2708 Is fie ld program m able, w hich means th a t custom patterns are im m ediate­ ly available by fo llo w in g the fu sin g p roce ­


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    PDF 8192-BIT 1024x8) 82S2708 82S2708 S82S2708, S82S2708: S82S2708 prom 2708 S82S2708F S82S2708 1024x8 PROM p-iris control

    82S210

    Abstract: N82S210 N82S210F S82S210 S82S210F
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 2304-BIT BIPOLAR RAM 256 X 9 DESCRIPTION The 82S210 data inputs and outputs are common (common I/O) w ith separate out­ put disable (OD) line that allows ease of read/write operations using a common bus. 82S210 (T.S.) (0°C to 75 °C) specify 82S210F or N and


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    PDF 2304-BIT 256x9) 82S210 N82S210F S82S210F. 82S210 N82S210 S82S210 S82S210F

    82S25

    Abstract: N74S189N N3101A N74S189 N82S25 N82S25N S54S189 S82S25
    Text: BIPOLAR MEMORY DIVISION MAY 1982 64-BIT BIPOLAR SCRATCH PAD MEMORY 16x4 82S25 (O.C.), 3101A (O.G.), 54/74S189 (T.S.) DESCRIPTION APPLICATIONS T h is fa m ily o f R ead/W rite R andom Access M em ories is ideal fo r use in scra tch pad and high-speed b u ffe r m em ory a pp licatio n s.


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    PDF 64-BIT 82S25 54/74S189 N74S189N, N82S25N, S54S189 82S25, 82S25 N74S189N N3101A N74S189 N82S25 N82S25N S54S189 S82S25

    aj 312

    Abstract: 82S226 82S229 N82S226N N82S229N
    Text: S ig n e tic s M em ories - Bipolar Rom 82S226, 82S229 - 1024 Bit Bipolar Rom 256 x 4 C O N N E C T IO N D IA G R A M A .Œ G E N E R A L D E SC R IPTIO N The 82S226 and 82S229 include on-chip decoding and 2 c h ip enable inpu ts fo r ease o f m em o ry expansion. The y _


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    PDF N82S226, N82S229 82S226 82S229 N82S226/229, S82S226/229, N82S226/229: S82S226/229: aj 312 N82S226N N82S229N