Untitled
Abstract: No abstract text available
Text: Hot Melt Glue Detector 885 TH SERIES FIBER SENSORS Related Information •■General terms and conditions. F-17 ■■General precautions. P.1405 ■■Sensor selection guide. P.831~ LASER SENSORS PHOTOELECTRIC
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TH-12CPS
TH-12CPS)
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Untitled
Abstract: No abstract text available
Text: 833 FIBER SENSORS Wafer Mapping Sensor M-DW1 Related Information •■General terms and conditions. F-17 ■■General precautions. P.1405 ■■Sensor selection guide. P.831~ LASER SENSORS PHOTOELECTRIC SENSORS
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PX-24ES
Abstract: obstacle sensors
Text: 899 FIBER SENSORS Long Range & Wide Area Photoelectric Sensor PX-2 SERIES Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ ■■Sensor selection guide. P.831~
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Untitled
Abstract: No abstract text available
Text: 889 Thru-beam Type Ultrasonic Sensor US-N300 FIBER SENSORS Related Information •■General terms and conditions. F-17 ■■General precautions. P.1405 ■■Sensor selection guide.P.831~ LASER SENSORS
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US-N300
MS-N30
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obstacle sensor
Abstract: No abstract text available
Text: 863 FIBER SENSORS Pipe-mountable Liquid Level Detection Sensor EX-F1 Related Information •■General terms and conditions. F-17 ■■General precautions. P.1405 Amplifier Built-in ■■Sensor selection guide.P.831~
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Untitled
Abstract: No abstract text available
Text: 853 FIBER SENSORS Leak Detection Sensor Amplifier Built-in EX-F70 SERIES EX-F60 SERIES Related Information •■General terms and conditions. F-17 ■■General precautions. P.1405 ■■Sensor selection guide. P.831~
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EX-F70
EX-F60
panasonic-electric-wo661
EX-F70/
EX-F60
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Untitled
Abstract: No abstract text available
Text: 867 FIBER SENSORS Water Detection Sensor EZ-10 SERIES Related Information •■General terms and conditions.F-17 ■■Glossary of terms.P.1359~ ■■Sensor selection guide. P.831~ ■■General precautions.P.1405
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EZ-10
130mm
EZ-10
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Untitled
Abstract: No abstract text available
Text: 879 FIBER SENSORS Color Detection Fiber Sensor FZ-10 SERIES Related Information •■General terms and conditions. F-17 ■■Glossary of terms…. P.1359~ ■■Sensor selection guide.P.831~ ■■General precautions. P.1405
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FZ-10
LX-100
FZ-10
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a37 zener
Abstract: No abstract text available
Text: 891 FIBER SENSORS Small / Slim Object Detection Area Sensor NA1-11 Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ ■■Sensor selection guide.P.831~ ■■General precautions. P.1405
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NA1-11
a37 zener
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water level inductive sensor
Abstract: obstacle sensors
Text: 869 FIBER SENSORS Digital Mark Sensor Amplifier Built-in LX-100 SERIES Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ ■■Sensor selection guide.P.831~ ■■General precautions. P.1405
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LX-100
LX-101â
LX-101-P
LX-100
FZ-10
water level inductive sensor
obstacle sensors
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celeron MOTHERBOARD CIRCUIT diagram
Abstract: socket 370 pinout AP-585 AP-589 CK-408 PGA370
Text: Distributed by: www.Jameco.com ✦ 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Intel Celeron® Processor for the PGA370 Socket up to 1.40 GHz on 0.13 Micron Process Datasheet Product Features • ■
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PGA370
PGA370
celeron MOTHERBOARD CIRCUIT diagram
socket 370 pinout
AP-585
AP-589
CK-408
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Untitled
Abstract: No abstract text available
Text: DEM-ADS83xE SBAU072 – SEPTEMBER 2001 FEATURES DESCRIPTION ● PROVIDES FAST AND EASY PERFORMANCE TESTING FOR ADS830/831 The DEM-ADS83xE evaluation fixture is designed for ease of use when evaluating the 8-bit high speed Analog-toDigital A/D converter ADS830 or ADS831. The ADS830
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DEM-ADS83xE
SBAU072
ADS830/831
DEM-ADS83xE
ADS830
ADS831.
60Msps
ADS831
80Msps.
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ZINC OXIDE VARISTORS
Abstract: zinc-oxide nonlinear resistors ignition with triac transient absorption zener UL1449 E213592
Text: MDE Semiconductor, Inc. Circuit Protection Products 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414 1-800-831-4881 Email: [email protected] Web: www.mdesemiconductor.com Metal Oxide Varistors Varistors are voltage dependent nonlinear devices, which have an electrical behavior
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UL1449
E213592)
ZINC OXIDE VARISTORS
zinc-oxide nonlinear resistors
ignition with triac
transient absorption zener
UL1449
E213592
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TP5089
Abstract: TP5089N C1995 N16A telephone KEYPAD
Text: Distributed by: www.Jameco.com ✦ 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Jameco Part Number 32803 TP5089 DTMF TOUCH-TONE Generator General Description Features The TP5089 is a low threshold voltage field-implanted metal gate CMOS integrated circuit It interfaces directly to a
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TP5089
TP5089N
C1995
N16A
telephone KEYPAD
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M113
Abstract: t4bu SD1013-3
Text: m âWt* Pr&<iuvt$ m Micmsemi 140 Commerce Drive Wlontgomeryviile, PA 18936-1013 Tel: 215 831-9840 SD1013-3 RF & MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS FM CLASS C TRANSISTOR FREQUENCY 150MHz VOLTAGE 2SV POWER OUT 10W POWER GAIN 10dB EFFICIENCY 55%TYP
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150MHz
SD1013-3
108-152MHz
M113
t4bu
SD1013-3
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IRf 334
Abstract: IRF 830 TRANSISTOR irf 830 Fi 830 application note using irf 830 diode on 832 irf ballast 831 transistor irf 832 IRF832
Text: SGS-THOMSON üLKgirœraOÊi IRF 830/FI-831/FI IRF 832/FI-833/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS IRF830 IRF830FI 500 V 500 V IRF831 IRF831FI 450 V 450 V IRF832 IRF832FI 500 V 500 V IRF833 IRF833FI 450 V 450 V ^DS on 1.5 fi 1.5 fi
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830/FI-831/FI
832/FI-833/FI
IRF830
IRF830FI
IRF831
IRF831FI
IRF832
IRF832FI
IRF833
IRF833FI
IRf 334
IRF 830 TRANSISTOR
irf 830
Fi 830
application note using irf 830
diode on 832
irf ballast
831 transistor
irf 832
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2n608
Abstract: transistor p5t 2N60B 2N60A 2n6080 2n60b4 2NS061 2N6084 IN608 2n60s4
Text: IIiffr^«rtriLVua i i / i S 140Commerce Drive Ê W Ê Ê G fQ S G n il 2 N608Ö M o n tg o m eryvilte, PA 18936-1013 Teli i2!5 .831.;9840 2 N 6 0 84 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS >r-'REGL.ENCY .VOLTAGE ;«POWEROUT 12.5V 4 4ÖW
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2N6Q80
N6084
230MHz
iM13SÃ
3D1018
2NeD34
iSy84
2N60S4
175MHi
2N6080
2n608
transistor p5t
2N60B
2N60A
2n6080
2n60b4
2NS061
2N6084
IN608
2n60s4
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Untitled
Abstract: No abstract text available
Text: l i f t « j f ^ w un Ljrn«. j - x t i l - i d.£ W ü fO S e m mwmm 140 C o m m e rc e D rive Montgomeryvilie, PA 18936.1013 Tei; 215 831-9840 SD1 51 2 RF & MICROWAVE TRANSISTORS MODE-S/JTIDS APPLICATIONS DESIGNED FOR USE !N LONG PULSE LBAND APPLICATIONS LIKE RADAR. JT iD S
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SD1512
SD1512
S05/2Ã
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Untitled
Abstract: No abstract text available
Text: Mt *mm Rf: Products M * ic r o s e m 140 C o m m e rc e Drive M o n tg o m eryville . PA 18936-1013 Tel: {215 831-9840 i S D 1 5 1 1-8 RF & MICROWAVE TRANSISTORS UHF PULSE POWER COMMON EMETTER ! iV W T V P iC A I . C V V ifeWTYPiGALPULSüD GOLD MO.TALUZAVION
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511-OS
25---C)
SD1511-8
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LG diode 831
Abstract: 831 transistor IRF 830 IRf 334 IRF 830 TRANSISTOR irf 831 SMPS using IRF830 IRF830Fi transistor 831 Fi 830
Text: S C S -T H O M S O N ^ 7 J IIIC T » » TM IRF 830/FI-831/FI IRF 832/FI-833/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF830 IRF830FI VDSS 500 V 500 V RDS on 1.5 Ü 1.5 Q 'o ' 4.5 A 3.0 A IRF831 IRF831FI 450 V 450 V 1.5 n 1.5 n 4.5 A 3.0 A
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830/FI-831/FI
832/FI-833/FI
IRF830
IRF830FI
IRF831
IRF831FI
IRF832
IRF832FI
IRF833
IRF833FI
LG diode 831
831 transistor
IRF 830
IRf 334
IRF 830 TRANSISTOR
irf 831
SMPS using IRF830
transistor 831
Fi 830
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ANI 1015
Abstract: No abstract text available
Text: H l i f r S wrr ^ .i-ii j i . T fc.-mi f W ? C iy W 0 liJ f 140 Com m erce Drive m u iK ^ u i t f V i y v f i t C iPA n 18938-1013 tv « /v v t u w Montgomeryvilfe, Tel: 2151 831 -9840 ^ »» ^ a ^ p SD1 01 5 RF & MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS
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108-152MHz
ANI 1015
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PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A
Abstract: BUX53
Text: Power transistors • NPN « Epitaxial Planar » Am plifier and switching NP N « Planar E p itaxte » A m p lific a tio n e t co m m u ta tio n Type Case Boitier *tot W * V CEx 'c VCEO (V) (A) h21E m in max 'c (A) VCEsat / ' C (V) / (A /l('AB) fT (MHz)
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Tpu76
PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A
BUX53
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BF 331 TRANSISTORS
Abstract: ibf830 SD 336 IRf 334 MOS 3020 application note using irf 830 rf830 BF 830 transistor transistor maw CJ135
Text: 30E D rzj S • 7^237 SCS-THOMSON G s^THÖMSoF TYPE IRF830 IRF830FI IRF831 IRF831FI IRF832 IRF832FI IRF833 , IRF833FI QG2Sßl3 b ■ VDSS 500 V 500 V 450 V 450 V 500 V 500 V 450 V 450 V N ^DS on 1.5 n 1.5 n 1.5 n 1.5 ß 2.0 Q 2.0 fl 2.0 Q 2.0 a - ( _
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830/FI-831/FI
832/FI-833/FI
IRF830
IRF830FI
IRF831
IRF831FI
IRF832
IRF832FI
IRF833
IRF833FI
BF 331 TRANSISTORS
ibf830
SD 336
IRf 334
MOS 3020
application note using irf 830
rf830
BF 830 transistor
transistor maw
CJ135
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IRF830
Abstract: GC237 IRF830FI IRF 830 IRF831 IRF831FI
Text: 7^237 00HS7Db SÜD • SGTH SCS-THOMSON G IRF830FI IRF831/FI ILlûï^MOûS ì N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss RDS on Id IR F 8 3 0 IR F 8 3 0 F I 500 V 500 V < 1.5 £2 < 1.5 n 4 .5 A 3 A IR F831 IR F 8 3 1 F I 450 V 450 V < 1.5 £2
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00HS7Db
IRF830FI
IRF831/FI
IRF830
IRF830FI
IRF831
IRF831FI
Gl4S71S
IRF830/FI-IRF831/FI
GC237
IRF 830
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