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    Rochester Electronics LLC ESD5384NCTBG

    CONSUMER CIRCUIT, PBGA9
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    DigiKey ESD5384NCTBG Bulk 1,782
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    onsemi ESD5384NCTBG

    TVS DIODE 3VWM 9-WLCSP
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    Newark ESD5384NCTBG Reel 5,000
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    Rochester Electronics ESD5384NCTBG 431,860 1
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    onsemi ESD7484NCTAG

    TVS DIODE 3VWM 10WLCSP
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    RS ESD7484NCTAG Bulk 25
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    Eaton Corporation 10250T184NC1N

    Industrial Panel Mount Indicators / Switch Indicators IND LGT 480V/XFR R PLST LENS
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    Mouser Electronics 10250T184NC1N
    • 1 $283.57
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    Eaton Corporation 10250T184NC6NX

    Industrial Panel Mount Indicators / Switch Indicators INDICATING LIGHT
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    Mouser Electronics 10250T184NC6NX
    • 1 $289.05
    • 10 $284.08
    • 100 $279.1
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    Find more 84NC price and stock on Findchips.com

    84NC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HFA15TB60

    Abstract: PD233 ULTRA fast rectifier diode 15A 200V anode common ULTRA fast rectifier diode 30A 200V anode common HFA15TB60-1 IRFP250 IR HFA15TB60
    Text: Bulletin PD -2.334 rev. B 01/02 HFA15TB60 HFA15TB60-1 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF = 1.7V Qrr * = 84nC


    Original     		PDF HFA15TB60 HFA15TB60-1 HFA15TB60 O-220AC HFA15TB60, O-262 PD233 ULTRA fast rectifier diode 15A 200V anode common ULTRA fast rectifier diode 30A 200V anode common HFA15TB60-1 IRFP250 IR HFA15TB60

    FDB3632

    Abstract: FDP3632 FDI3632 tc144e
    Text: FDB3632 / FDP3632 / FDI3632 N-Channel UltraFET Trench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		PDF FDB3632 FDP3632 FDI3632 FDI3632 tc144e

    HFA15TB60PBF

    Abstract: HFA15TB60 HFA06TB120 HFA15TB60-1 IRFP250 vishay transistor date code IR HFA15TB60
    Text: PD-95738 HFA15TB60PbF HFA15TB60-1 Ultrafast, Soft Recovery Diode HEXFRED TM Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs


    Original     		PDF PD-95738 HFA15TB60PbF HFA15TB60-1 HFA15TB60 12-Mar-07 HFA15TB60PBF HFA06TB120 HFA15TB60-1 IRFP250 vishay transistor date code IR HFA15TB60

    TRANSISTOR SMD MARKING CODE DM

    Abstract: transistor smd code marking tm HFA15TB60S IRFP250 SMD-220 TRANSISTOR SMD MARKING CODE 2x N smd marking dt2
    Text: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		PDF PD-20615 HFA15TB60S HFA15TB60S characterist86) SMD-220 TRANSISTOR SMD MARKING CODE DM transistor smd code marking tm IRFP250 TRANSISTOR SMD MARKING CODE 2x N smd marking dt2

    irfp250

    Abstract: HFA06TB120 HFA15TB60 HFA15TB60-1 international rectifier
    Text: PD-95738 HFA15TB60PbF HFA15TB60-1 Ultrafast, Soft Recovery Diode HEXFRED TM Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs


    Original     		PDF PD-95738 HFA15TB60PbF HFA15TB60-1 HFA15TB60 unsurpass120 HFA15TB60PbF, O-262) O-262 irfp250 HFA06TB120 HFA15TB60-1 international rectifier

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		PDF PD-20615 HFA15TB60S HFA15TB60S 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free


    Original     		PDF PD-96033 HFA15TB60SPbF HFA15TB60S HFA15T

    FDB3632

    Abstract: FDI3632 FDP3632 tc144e
    Text: FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		PDF FDB3632 FDP3632 FDI3632 FDI3632 tc144e

    Untitled

    Abstract: No abstract text available
    Text: PD -2.334 HFA15TB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs


    Original     		PDF HFA15TB60 HFA15TB60 O-220AC

    IR HFA15TB60

    Abstract: No abstract text available
    Text: Bulletin PD -2.334 rev. C 11/03 HFA15TB60 HFA15TB60-1 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF = 1.7V Qrr * = 84nC


    Original     		PDF HFA15TB60 HFA15TB60-1 12-Mar-07 IR HFA15TB60

    Untitled

    Abstract: No abstract text available
    Text: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free


    Original     		PDF PD-96033 HFA15TB60SPbF HFA15TB60S 08-Mar-07

    FDB3632

    Abstract: No abstract text available
    Text: FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		PDF FDB3632 FDP3632 FDI3632

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification KDB3632 FDB3632 TO-263 Features (Typ.), VGS = 10V, ID = 80A +0.1 1.27-0.1 rDS(ON) = 7.5m Qg(tot) = 84nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)


    Original     		PDF KDB3632 FDB3632) O-263

    FDB3632_F085

    Abstract: FDB3632-F085 FDB3632
    Text: FDB3632_F085 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge


    Original     		PDF FDB3632 O-263AB FDB3632_F085 FDB3632-F085

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD -2.334 rev. C 11/03 HFA15TB60 HFA15TB60-1 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF = 1.7V Qrr * = 84nC


    Original     		PDF HFA15TB60 HFA15TB60-1 HFA15TB60 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD-95738 HFA15TB60PbF HFA15TB60-1 Ultrafast, Soft Recovery Diode HEXFRED TM Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs


    Original     		PDF PD-95738 HFA15TB60PbF HFA15TB60-1 HFA15TB60 08-Mar-07

    HFA15TB60S

    Abstract: IRFP250
    Text: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free


    Original     		PDF PD-96033 HFA15TB60SPbF HFA15TB60S 12-Mar-07 IRFP250

    IR HFA15TB60

    Abstract: HFA15TB60 HFA15TB60-1 IRFP250
    Text: Bulletin PD -2.334 rev. C 11/03 HFA15TB60 HFA15TB60-1 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF = 1.7V Qrr * = 84nC


    Original     		PDF HFA15TB60 HFA15TB60-1 HFA15TB60 O-220AC HFA15TB60, O-262 IR HFA15TB60 HFA15TB60-1 IRFP250

    HFA15TB60S

    Abstract: IRFP250 SMD-220 MAR 618 transistor
    Text: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		PDF PD-20615 HFA15TB60S HFA15TB60S 12-Mar-07 IRFP250 SMD-220 MAR 618 transistor

    FDB3632

    Abstract: No abstract text available
    Text: FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • rDS ON = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		PDF FDB3632 FDP3632 FDI3632 FDH3632 O-220AB O-263AB O-262AB O-24manner

    HFA15TB60

    Abstract: IRFP250
    Text: PD -2.334 HFA15TB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs


    Original     		PDF HFA15TB60 HFA15TB60 IRFP250

    HFA15TB60

    Abstract: IRFP250
    Text: Bulletin PD -2.334 rev. A 11/00 HFA15TB60 HEXFRED Ultrafast, Soft Recovery Diode TM BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits VF = 1.7V Qrr * = 84nC


    Original     		PDF HFA15TB60 HFA15TB60 IRFP250

    FDB3632

    Abstract: KDB3632 84NC mosfet smd
    Text: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3632 FDB3632 TO-263 Features (Typ.), VGS = 10V, ID = 80A +0.1 1.27-0.1 rDS(ON) = 7.5m Qg(tot) = 84nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)


    Original     		PDF KDB3632 FDB3632) O-263 FDB3632 84NC mosfet smd

    FDB3632

    Abstract: FDH3632 FDI3632 FDP3632
    Text: FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • rDS ON = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		PDF FDB3632 FDP3632 FDI3632 FDH3632 O-220AB FDH3632