vsmy3850gs08
Abstract: vsmy3850 VSMY3850-GS08
Text: VSMY3850 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • 94 8553 DESCRIPTION VSMY3850 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant intensity, high
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VSMY3850
J-STD-020
2002/95/EC
2002/96/EC
VSMY3850
11-Mar-11
vsmy3850gs08
VSMY3850-GS08
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Untitled
Abstract: No abstract text available
Text: VSMY3850X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • • 94 8553 DESCRIPTION VSMY3850X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant intensity,
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VSMY3850X01
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
VSMY3850X01
18-Jul-08
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CECC00802
Abstract: J-STD-020B VSMG3700 VSMG3700-GS08 VSMG3700-GS18
Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm RoHS Compliant, Released for Lead Pb -free Solder Process Description VSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package.
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VSMG3700
VSMG3700
08-Apr-05
CECC00802
J-STD-020B
VSMG3700-GS08
VSMG3700-GS18
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Untitled
Abstract: No abstract text available
Text: TSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
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TSMG3700
TSMG3700
08-Apr-05
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TSMG3700
Abstract: TSMG3700-GS08 TSMG3700-GS18
Text: TSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
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TSMG3700
TSMG3700
D-74025
08-Mar-05
TSMG3700-GS08
TSMG3700-GS18
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Untitled
Abstract: No abstract text available
Text: TSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
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TSMG3700
TSMG3700
08-Apr-05
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Infrared led 850 smd
Abstract: GaAs 850 nm Infrared Emitting Diode 850 nm Infrared Emitting Diode VCSEL array, 850nm smd plcc-2 infrared diode 850 nm Infrared Emitting Diode smd vcsel SMD INF226 infrared transistor
Text: Infrared Light Emitting Diode OP180 & OP280 Series Features: • • • • • • • High power GaAs—OP180, 940 nm center wavelength High power GaAIAs—OP280K and OP280KT, 875 nm center wavelength VCSEL GaAlAs-OP280V, 850 nm center wavelength Point Source GaAlAs-OP280PS, 850 nm center wavelength
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OP180
OP280
GaAs--OP180,
GaAIAs--OP280K
OP280KT,
GaAlAs-OP280V,
GaAlAs-OP280PS,
OP180
OP280K,
OP280KT
Infrared led 850 smd
GaAs 850 nm Infrared Emitting Diode
850 nm Infrared Emitting Diode
VCSEL array, 850nm
smd plcc-2
infrared diode
850 nm Infrared Emitting Diode smd
vcsel SMD
INF226
infrared transistor
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Untitled
Abstract: No abstract text available
Text: VSMY3850X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: p = 850 nm
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PDF
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VSMY3850X01
J-STD-020
AEC-Q101
VSMY3850X01
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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VSMY2853SL
Abstract: No abstract text available
Text: VSMY2853SL www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: side view • Dimensions L x W x H in mm : 2.3 x 2.55 x 2.3 • Peak wavelength: p = 850 nm
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VSMY2853SL
VSMY2853SL
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VSMY2853SL www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: side view • Dimensions L x W x H in mm : 2.3 x 2.55 x 2.3 • Peak wavelength: λp = 850 nm
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VSMY2853SL
reVSMY2853SL
28-Mar-13
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Untitled
Abstract: No abstract text available
Text: VSMY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm
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Original
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PDF
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VSMY3850
J-STD-020
VSMY3850
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VSMG3700 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm
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VSMG3700
VSMG3700
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VSMY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm
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Original
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PDF
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VSMY3850
J-STD-020
VSMY3850
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VSMG10850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH FEATURES • Package type: Surface mount • Package form: Side view • Dimensions L x W x H in mm : 3 x 2 x 1 • Peak wavelength: p = 850 nm • High reliability
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VSMG10850
VSMG10850
VEMD10940F
J-STD-020
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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J-STD-020D
Abstract: VSMG3700 VSMG3700-GS08 VSMG3700-GS18 850 nm Infrared Emitting Diode smd
Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability
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VSMG3700
VSMG3700
18-Jul-08
J-STD-020D
VSMG3700-GS08
VSMG3700-GS18
850 nm Infrared Emitting Diode smd
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Untitled
Abstract: No abstract text available
Text: VSMG10850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH FEATURES • Package type: Surface mount • Package form: Side view • Dimensions L x W x H in mm : 3 x 2 x 1 • Peak wavelength: p = 850 nm • High reliability
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Original
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PDF
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VSMG10850
VEMD10940F
VSMG10850
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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J-STD-020D
Abstract: VSMG3700 VSMG3700-GS08 VSMG3700-GS18
Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm
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VSMG3700
VSMG3700
18-Jul-08
J-STD-020D
VSMG3700-GS08
VSMG3700-GS18
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Untitled
Abstract: No abstract text available
Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability
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Original
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PDF
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VSMG3700
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
VSMG3700
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability
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VSMG3700
VSMG3700
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability
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Original
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PDF
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VSMG3700
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
VSMG3700
2011/65/EU
2002/95/EC.
2011/65/EU.
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BPW41 circuit application
Abstract: OSRAM IR emitter
Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability
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Original
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PDF
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VSMG3700
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
VSMG3700
2002/95/EC.
2011/65/EU.
JS709A
BPW41 circuit application
OSRAM IR emitter
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VSMG3700
Abstract: VSMG3700-GS08 VSMG3700-GS18 850 nm Infrared Emitting Diode smd
Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability
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PDF
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VSMG3700
VSMG3700
18-Jul-08
VSMG3700-GS08
VSMG3700-GS18
850 nm Infrared Emitting Diode smd
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Untitled
Abstract: No abstract text available
Text: VSMY98545 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: high power SMD with lens • Dimensions L x W x H in mm : 3.85 x 3.85 x 2.24 •
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VSMY98545
VSMY98545
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VSMY98545 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: High power SMD with lens • Dimensions L x W x H in mm : 3.85 x 3.85 x 2.24 •
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PDF
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VSMY98545
VSMY98545
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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