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    850NM PHOTODIODE ANALOG AMPLIFIER Search Results

    850NM PHOTODIODE ANALOG AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    SF-XP85B102DX-000 Amphenol Cables on Demand Amphenol SF-XP85B102DX-000 SFP28 25GBASE-SR Short-Range 850nm Multi-Mode Optical Transceiver Module (Duplex LC Connector) by Amphenol XGIGA [XP85B102DX] Datasheet
    SF-QXP85B402D-000 Amphenol Cables on Demand Amphenol SF-QXP85B402D-000 QSFP28 100GBASE-SR Short-Range 850nm Multi-Mode Optical Transceiver Module (MTP/MPO Connector) by Amphenol XGIGA [QXP85B402D] Datasheet
    SF-FOHHB23PAO-010M Amphenol Cables on Demand Amphenol SF-FOHHB23PAO-010M 10m (32.8') External 4x HD Mini-SAS (SFF-8644) Active Optical Cable (AOC) - 850nm OM3 OFNP - 4 x 12 Gbps (48 Gbps) SAS 3.0 & iPass+™ HD Compliant 10m (32.8') Datasheet
    SF-FOHHB23PAO-005M Amphenol Cables on Demand Amphenol SF-FOHHB23PAO-005M 5m (16.4') External 4x HD Mini-SAS (SFF-8644) Active Optical Cable (AOC) - 850nm OM3 OFNP - 4 x 12 Gbps (48 Gbps) SAS 3.0 & iPass+™ HD Compliant 5m (16.4') Datasheet

    850NM PHOTODIODE ANALOG AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    8C449

    Abstract: 850nm photodiode pigtail fiber pigtail LED 850nm
    Text: PRODUCT INFORMATION 8C449 850nm Datacom, General Purpose, Analog Applications PIN/Preamp This device consists of a PIN photodiode and a transimpedance amplifier assembled in a TO-46 package. It is designed for short-distance ATM up to 155 Mbps. The preamplifier’s linearity and absence of automatic gain


    Original     		8C449 850nm 8C449 850nm photodiode pigtail fiber pigtail LED 850nm PDF

    850nm photodiode analog amplifier

    Abstract: LWL-DMA025 HFP1500 photodiode die WAFER 74AC 74HC iec 60793 LWL-DMA-025 schema DIGITAL TO ANALOG
    Text: The information contained in this documentation is the property of MAZeT. Photocopying or otherwise reproducing any part of the catalog, whether electronically or mechanically, is prohibited, except where the express permission of MAZeT GmbH has been obtained. In general, all company and brand names, as well as the


    Original     		LWL-DMA025 DB-04-161f 850nm photodiode analog amplifier LWL-DMA025 HFP1500 photodiode die WAFER 74AC 74HC iec 60793 LWL-DMA-025 schema DIGITAL TO ANALOG PDF

    650nm 5mw laser

    Abstract: ird300 laser range finder schematics 500mW 808nm infrared laser diode driver circuit 650nm laser diode 200mw circuit diagram of radar range finder LD-808-500G t15f-xyz-wm LD-808-1000G LD-650-5A
    Text: VCSEL, Green, Red & Infrared Laser Modules & Optical Transceivers by Lasermate VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items | Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |


    Original     		1550nm 650nm 5mw laser ird300 laser range finder schematics 500mW 808nm infrared laser diode driver circuit 650nm laser diode 200mw circuit diagram of radar range finder LD-808-500G t15f-xyz-wm LD-808-1000G LD-650-5A PDF

    LPD3010

    Abstract: PRBS31 max3797 850nm photodiode analog amplifier 10GBASE-SR Rosa 850nm 16 SPD3010 Cosemi ROSA TIA AGC application note
    Text: MAX3797 10.3Gbps, Low-Power Transimpedance Amplifier for 10GBASE-SR Applications General Description The MAX3797 is a low-power transimpedance amplifier designed for optical transmission systems at data rates up to 10.3125Gbps and for use with PIN diodes.


    Original     		MAX3797 10GBASE-SR 3125Gbps LPD3010 PRBS31 850nm photodiode analog amplifier Rosa 850nm 16 SPD3010 Cosemi ROSA TIA AGC application note PDF

    sensor FLC 100

    Abstract: E001 G100 light sensor LED 10mA 850nm photodiode analog amplifier
    Text: iC-LQ PULSE AND AC LIGHT SENSOR Rev A1, Page 1/8 FEATURES APPLICATIONS ° ° ° ° ° ° ° ° ° ° ° ° ° Fast response amplifier with on-chip photodiode High interference immunity due to monolithic design Active photodiode area of 0.9mm² Suitable for visible light and near infrared


    Original     		250kHz to12V sensor FLC 100 E001 G100 light sensor LED 10mA 850nm photodiode analog amplifier PDF

    receiver photodiode 850nm dbm

    Abstract: OPF0400 OPF1414 OPF2412 OPF2416 OPF2416T OPF2416TC OPF2418 p850
    Text: 850nm Fiber Optic Receiver Module in Dual-in-Line Package Technical Data OPF2416, OPF2416T, OPF2416TC Features x x x x x x x 850 nm wavelength Link distance up to 2 km Data rates up to 155 Mbps Wide operating temperature range Optimized for use with 62.5/125µm and


    Original     		850nm OPF2416, OPF2416T, OPF2416TC OPF0400 10MHz OPF2416 receiver photodiode 850nm dbm OPF1414 OPF2412 OPF2416T OPF2416TC OPF2418 p850 PDF

    transistor smd uw

    Abstract: AEC-Q100 JESD22-A113 JESD22-B102 MLX75305 nlao melexis PIN photodiode sensitivity 850nm
    Text: MLX75305 Light-to-Voltage SensorEyeC Features and Benefits Converts light intensity to voltage Designed for automotive applications High linearity Solder reflow 260degC, MSL3 Low temperature dependency Automotive qualified AEC-Q100 Grade 1 Supply voltage range 3V to 5.5V


    Original     		MLX75305 260degC, AEC-Q100 125degC ISO14001 May/09 transistor smd uw JESD22-A113 JESD22-B102 MLX75305 nlao melexis PIN photodiode sensitivity 850nm PDF

    Untitled

    Abstract: No abstract text available
    Text: 123456758 29ABCDCEDFE C A 8 E 8 Features and Benefits 1 Converts light intensity to voltage 1 Designed for automotive applications 1 High linearity 1 Solder reflow 260degC, MSL3 1 Low temperature dependency 1 Automotive qualified AEC-Q100 Grade 1 1 Supply voltage range 3V to 5.5V


    Original     		29ABCDCEDFE 260degC, AEC-Q100 125degC ISO14001 May/09 PDF

    SD 041-41-43-211 API

    Abstract: No abstract text available
    Text: A dvanced P h o to HIGH SPEED SILICON DETECTOR/PREAMPLIFIER This series o f silicon PIN integrated receivers are designed for high speed, for both the digital and analog user. These flexible and versatile devices are used in video, computer and instrumentation applications. The detectors proportionately


    OCR Scan     		850nm 100MHz, 350MHz SD 041-41-43-211 API PDF

    850nm pair of optical Fiber-optic

    Abstract: signetics rf Receiver Circuits photodiode for fiber-optic sensor 850nm photodiode analog amplifier cascode transimpedance
    Text: NE5210 Signetics Transimpedance Amplifier 280MHz Preliminary Specification Linear Products DESCRIPTION FEATURES The NE5210 is a 7ki2 transimpedance wide band, low noise amplifier with dif­ ferential outputs, particularly suitable for signal recovery in fiber-optic receivers.


    OCR Scan     		NE5210 280MHz) NE5210 280MHz BPF31, 850nm NE5214 50Mb/s NE5210/NE5214 850nm pair of optical Fiber-optic signetics rf Receiver Circuits photodiode for fiber-optic sensor 850nm photodiode analog amplifier cascode transimpedance PDF

    Fiber-optic temperature sensor 850nm photodiode

    Abstract: NE5210 106 6K tantalum capacitors 5014 BLL 850nm photodiode Fiber-optic diode T35 12H Fiber-optic photodiode 850nm fiber-optic photodiode for 850nm NE5210D 300-MHz
    Text: INTEGRATED CIRCUITS NE5210 Transimpedance amplifier 280MHz Product specification 1995 Apr 26 IC19 Philips Semiconductors PH ILIPS PHILIPS Philips Semiconductors Product specification Transimpedance amplifier (280MHz) NE5210 DESCRIPTION PIN CONFIGURATION


    OCR Scan     		NE5210 280MHz) 711DS2ti NE5210 280MHz OT108-1 076E06S MS-012AB Fiber-optic temperature sensor 850nm photodiode 106 6K tantalum capacitors 5014 BLL 850nm photodiode Fiber-optic diode T35 12H Fiber-optic photodiode 850nm fiber-optic photodiode for 850nm NE5210D 300-MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors Data Com m unications Products Product specification Transimpedance amplifier 280MHz DESCRIPTION NE5210 PIN CONFIGURATION The NE5210 is a 7kQ transim pedance wide band, low noise am plifier with differential outputs, particularly suitable fo r signal


    OCR Scan     		280MHz) NE5210 NE5210 280MHz 850nm NE5214 PDF

    Fiber-optic temperature sensor 850nm photodiode

    Abstract: NE5210 354MHz 850nm pair of optical Fiber-optic 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm NE5210D SD004 BPF-31
    Text: Philips Semiconductors Product specification Transimpedance amplifier 280MHz NE5210 DESCRIPTION PIN CONFIGURATION The NE5210 is a 7kΩ transimpedance wide band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber-optic receivers. The part is ideally suited for many


    Original     		280MHz) NE5210 NE5210 280MHz Fiber-optic temperature sensor 850nm photodiode 354MHz 850nm pair of optical Fiber-optic 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm NE5210D SD004 BPF-31 PDF

    NE5211D

    Abstract: Fiber-optic temperature sensor 850nm photodiode 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm SA5211 SA5211D CURRENT TRANSFORMER transimpedance SA52-11 RF Transistor s-parameter 50Mhz
    Text: Philips Semiconductors Product specification Transimpedance amplifier 180MHz NE/SA5211 DESCRIPTION PIN CONFIGURATION The NE/SA5211 is a 28kΩ transimpedance, wide-band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber optic receivers. The part is ideally suited for many


    Original     		180MHz) NE/SA5211 NE/SA5211 180MHz NE5211D Fiber-optic temperature sensor 850nm photodiode 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm SA5211 SA5211D CURRENT TRANSFORMER transimpedance SA52-11 RF Transistor s-parameter 50Mhz PDF

    Diode SV-02

    Abstract: 424 8P 850 nm LED for fiber-optic sensor 850 nm photodiode for fiber-optic sensor 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm photodiode for fiber-optic sensor 850 nm TRANSIMpedance Amplifier NE5211D SA5211
    Text: INTEGRATED CIRCUITS NE/SA5211 Transimpedance amplifier 180MHz Product specification 1995 Apr 26 IC19 Philips Semiconductors PHILIPS 7110fl2tj ODfl^T^a DDT • ! Philips Semiconductors Product specification Transimpedance amplifier (180MHz) NE/SA5211 DESCRIPTION


    OCR Scan     		NE/SA5211 180MHz) 7110fl2tj NE/SA5211 28ki2 180MHz sot108-1 076e06s Diode SV-02 424 8P 850 nm LED for fiber-optic sensor 850 nm photodiode for fiber-optic sensor 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm photodiode for fiber-optic sensor 850 nm TRANSIMpedance Amplifier NE5211D SA5211 PDF

    Untitled

    Abstract: No abstract text available
    Text: Fiber Optic Receiver OPF2418, OPF2418T, OPF2418TC OPF2418 Family • • • • • Up to 194 Mbps operation 850nm wavelength ST style port Wave solderable Wide temperature range The OPF2418 family is a low cost solution for high speed fiber optic communications designs. The internal lensing of this receiver’s design allows optimal response for fiber sizes of 100µm and below. The receiver is comprised of a high speed, low


    Original     		OPF2418, OPF2418T, OPF2418TC OPF2418 850nm OPF2418 PDF

    photodiode pin 850nm 155mbps

    Abstract: No abstract text available
    Text: Fiber Optic Receiver OPF2416, OPF2416T, OPF2416TC OPF2416 Famly • • • • • Up to 155Mbps operation 850nm wavelength ST style port Wave solderable Wide temperature range The OPF2416 family is a low cost solution for high speed fiber optic communications designs. The internal lensing of this receiver’s design allows optimal response for fiber sizes of 100µm and below. The receiver is comprised of a high speed, low


    Original     		OPF2416, OPF2416T, OPF2416TC OPF2416 155Mbps 850nm photodiode pin 850nm 155mbps PDF

    Untitled

    Abstract: No abstract text available
    Text: Prelim inary specification Philips Sem iconductors Data C om m unications Products NE/SA5211 Transimpedance amplifier 180MHz P IN C O N F IG U R A T IO N D E S C R IP T IO N The NE/SA5211 is a 28kQ transim pedance, wide-band, low noise am plifier with differential outputs, particularly suitable for signal


    OCR Scan     		180MHz) NE/SA5211 NE/SA5211 180MHz BPF31 NE5210/NE5217 100Mb/s NE5210 PDF

    BPF31 PIN

    Abstract: RESISTOR philips 5053 Fiber-optic temperature sensor 850nm photodiode CURRENT TRANSFORMER transimpedance RF Transistor s-parameter 50Mhz 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm transimpedance amplifier SA5211 SA5211D
    Text: INTEGRATED CIRCUITS SA5211 Transimpedance amplifier 180MHz Product specification Replaces datasheet NE/SA5211 of 1995 Apr 26 IC19 Data Handbook Philips Semiconductors 1998 Oct 07 Philips Semiconductors Product specification Transimpedance amplifier (180MHz)


    Original     		SA5211 180MHz) NE/SA5211 SA5211 BPF31 PIN RESISTOR philips 5053 Fiber-optic temperature sensor 850nm photodiode CURRENT TRANSFORMER transimpedance RF Transistor s-parameter 50Mhz 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm transimpedance amplifier SA5211D PDF

    sensor FLC 100

    Abstract: G100 light sensor MAX500A Photodiode as light sensor TO18-4L
    Text: iC-LQ PULSE AND AC LIGHT SENSOR Rev B2, Page Page 1/7 FEATURES Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë APPLICATIONS Fast response amplifier with on-chip photodiode High interference immunity due to monolithic design Active photodiode area of 1 mm² Suitable for visible and near infrared light


    Original     		to9-6135-9292-0 sensor FLC 100 G100 light sensor MAX500A Photodiode as light sensor TO18-4L PDF

    sensor FLC 100

    Abstract: analog output Ambient light sensor G100 875NM
    Text: iC-LQ PULSE AND AC LIGHT SENSOR Rev B1, Page 1/7 FEATURES APPLICATIONS ° ° ° ° ° ° ° ° ° ° ° ° ° ° Fast response amplifier with on-chip photodiode High interference immunity due to monolithic design Active photodiode area of 1mm² Suitable for visible and near infrared light


    Original     		150kHz t9-6135-9292-0 sensor FLC 100 analog output Ambient light sensor G100 875NM PDF

    circuit diagram wireless video transmitter and re

    Abstract: GPON ont SFP 1310nm TRANSMITTER CIRCUIT DIAGRAM for CATV MAX3816 AN3812 GPON schematics GPON ONT ONU GPON ont SFP RF simple home alarm circuit diagram ONT SFP
    Text: Fiber 9th Edition January 2009 Reduce risk and beat deadlines with proven reference designs ce Referen ve sa designs d time an money ASSEMBLED BOARDS EVALUATION SOFTWARE LAYOUT FILES BOARD LAYERS TEST RESULTS SCHEMATICS BILL OF MATERIALS Designs for every application


    Original     		PDF

    100BASE-SX

    Abstract: EN60825-1 OPF5020 UV diode 100 nm to 280 nm
    Text: 850nm Fast Ethernet Transceiver in 1 x 7 SMD Package Technical Data OPF5020 Features • • • • • • Small Form Factor surface mount package MT-RJ Receptacle Low cost 850 nm LED design Link distance up to 300m at 125Mbps Fully complies with the 100BASE-SX Fast


    Original     		850nm OPF5020 125Mbps 100BASE-SX TIA-785) OPF5020 125Mbps 325mm) 100mm) HMS-10-13-A EN60825-1 UV diode 100 nm to 280 nm PDF

    Untitled

    Abstract: No abstract text available
    Text: INTERSIL SELECTION GUIDE INTERSIL Analog ALS Digital ALS ALS+Proximity Sensor Proximity Sensor  Q3/Q4 2011 INTERSIL SELECTION GUIDE | LIGHT SENSORS Ambient Light Sensing Intersil’s Light Sensor Family Analog


    Original     		1-888-INTERSIL D-85737 LC-072 PDF