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    XY-6060

    Abstract: 3421A fluke T17 H331
    Text: SEPTEMBER 27,1991 TEST REPORT # 91412 VERIFICATION TESTING 17X17 PGA SOCKET UF SAMTE APPROVED BY: MAX PEEL PRESIDENT AND DIRECTOR OF ADVANCED RESEARCH CONTECH RESEARCH, INC. 1 Contech Research This is to certify that the evaluation described herein was designed and executed by personnel of Contech Research, Inc. It


    Original     		PDF 17X17 MIL-STD-45662, 2190A O/24/91 S/21/91 12336A02027 PGM7-146C P36-1604 XY-6060 XY-6060 3421A fluke T17 H331

    3g mobile MOTHERBOARD CIRCUIT diagram

    Abstract: H55S1222EFP mobile MOTHERBOARD CIRCUIT diagram H55s1222
    Text: 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O Specification of 128M 4Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 1,048,576 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 128MBit 4Mx32bit) 1128Mbit H55S1222EFP 32bits 200us 3g mobile MOTHERBOARD CIRCUIT diagram mobile MOTHERBOARD CIRCUIT diagram H55s1222

    AS5C4009CW

    Abstract: AS5C4009
    Text: SRAM AS5C4009 Austin Semiconductor, Inc. 512K x 8 SRAM Ultra Low Power SRAM PIN ASSIGNMENT AVAILABLE AS MILITARY SPECIFICATION Top View 32-Pin DIP, 32-Pin SOJ & 32-Pin TSOP • SMD 5962-956131,2 • MIL STD-8831 FEATURES A18 1 32 Vcc • Ultra Low Power with 2V Data Retention


    Original     		PDF AS5C4009 32-Pin STD-8831 -55oC 125oC -40oC 85oC3 AS5C4009CW AS5C4009

    H55S1262EFP

    Abstract: No abstract text available
    Text: 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 128MBit 8Mx16bit) 128Mbit H55S1262EFP 16bits 200us

    smd A9

    Abstract: smd transistor A8 AS5C4009LL 54321
    Text: SRAM AS5C4009LL Austin Semiconductor, Inc. 512K x 8 SRAM Ultra Low Power SRAM PIN ASSIGNMENT AVAILABLE AS MILITARY SPECIFICATION Top View 32-Pin DIP, 32-Pin SOJ & 32-Pin TSOP • SMD 5962-956131,2 • MIL STD-8831 FEATURES A18 1 32 Vcc • Ultra Low Power with 2V Data Retention


    Original     		PDF AS5C4009LL 32-Pin STD-8831 -55oC 125oC -40oC 85oC3 smd A9 smd transistor A8 AS5C4009LL 54321

    Untitled

    Abstract: No abstract text available
    Text: 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 128MBit 8Mx16bit) 128Mbit H55S1262EFP 16bits 200us

    9668e

    Abstract: SR 13009 BY284 455e 2246 09 06 232 6843 9826e MAR 618 transistor MS1324 RX3 0633
    Text: Product Characterization Report for the SP3243 Family of Products Prepared By: Velvet Doung & Greg West Date: Aug 17, 2006 SP3243 Product Family Characterization Report Table of Contents Section Introduction Characterization Procedure Data Summary for Key Parameters


    Original     		PDF SP3243 SP3243 084E03 059E03 000E03 SP3243EBEA_ MS1324 9668e SR 13009 BY284 455e 2246 09 06 232 6843 9826e MAR 618 transistor MS1324 RX3 0633

    Untitled

    Abstract: No abstract text available
    Text: SRAM AS5C4009 LL Austin Semiconductor, Inc. 512K x 8 SRAM Ultra Low Power SRAM PIN ASSIGNMENT AVAILABLE AS MILITARY SPECIFICATION (Top View) 32-Pin DIP, 32-Pin SOJ & 32-Pin TSOP • SMD 5962-956131,2 • MIL STD-8831 FEATURES A18 1 32 Vcc • Ultra Low Power with 2V Data Retention


    Original     		PDF STD-8831 AS5C4009 32-Pin -55oC 125oC -40oC 85oC3

    Untitled

    Abstract: No abstract text available
    Text: 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O Specification of 128M 4Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 1,048,576 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 128MBit 4Mx32bit) 1128Mbit H55S1222EFP 32bits 200us

    AS5C4009

    Abstract: smd transistor marking A11
    Text: SRAM AS5C4009 512K x 8 SRAM Ultra Low Power SRAM PIN ASSIGNMENT AVAILABLE AS MILITARY SPECIFICATION Top View 32-Pin DIP, 32-Pin SOJ & 32-Pin TSOP • SMD 5962-956131,2 • MIL STD-8831 FEATURES A18 1 32 Vcc • Ultra Low Power with 2V Data Retention (0.2mW MAX worst case Power-down standby)


    Original     		PDF AS5C4009 32-Pin STD-8831 -55oC 125oC -40oC 85oC3 AS5C4009 smd transistor marking A11

    H55S1262EFP

    Abstract: No abstract text available
    Text: 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 128MBit 8Mx16bit) 128Mbit H55S1262EFP 16bits 200us

    512 X 32 SRAM

    Abstract: AS5C4009 198765 asi 320
    Text: SRAM AS5C4009 Austin Semiconductor, Inc. 512K x 8 SRAM Ultra Low Power SRAM PIN ASSIGNMENT AVAILABLE AS MILITARY SPECIFICATION Top View 32-Pin DIP, 32-Pin SOJ & 32-Pin TSOP • SMD 5962-956131,2 • MIL STD-8831 FEATURES A18 1 32 Vcc • Ultra Low Power with 2V Data Retention


    Original     		PDF AS5C4009 32-Pin STD-8831 -55oC 125oC -40oC 85oC3 512 X 32 SRAM AS5C4009 198765 asi 320