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    Vishay Intertechnologies WSF45279K880DHEK

    Res Metal Film 4527 9.88K Ohm 0.5% 2W ?50ppm/?C Molded SMD SMD Bulk - Bulk (Alt: WSF45279K880DHEK)
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    Avnet Americas WSF45279K880DHEK Bulk 35 Weeks 100
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    • 100 $1.98099
    • 1000 $1.8636
    • 10000 $1.8636
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    Vishay Intertechnologies WSF25159K880DHEB

    WSF2515 9.88K .5% T-2 EB e3 - Tape and Reel (Alt: WSF25159K880DHEB)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas WSF25159K880DHEB Reel 32 Weeks 1,000
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    • 10000 $0.96393
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    Vishay Intertechnologies WSF25159K880DHEA

    WSF2515 9.88K .5% T-2 EA e3 - Tape and Reel (Alt: WSF25159K880DHEA)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas WSF25159K880DHEA Reel 32 Weeks 2,000
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    Vishay Intertechnologies WSF25159K880DHEK

    WSF2515 9.88K .5% T-2 EK e3 - Bulk (Alt: WSF25159K880DHEK)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas WSF25159K880DHEK Bulk 32 Weeks 100
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    • 100 $1.40036
    • 1000 $1.31737
    • 10000 $1.31737
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    Vishay Intertechnologies WSF45279K880DHEA

    Res Metal Film 4527 9.88K Ohm 0.5% 2W ?50ppm/?C Molded SMD SMD Embossed Plastic T/R - Tape and Reel (Alt: WSF45279K880DHEA)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas WSF45279K880DHEA Reel 35 Weeks 1,200
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    Find more 880DH price and stock on Findchips.com

    880DH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K d998 transistor

    Abstract: lz 02 1068 D844 voltage regulator
    Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


    Original     		PDF OMAP5912 SPRS231E SPRS231D SPRS231E. 289-ball K d998 transistor lz 02 1068 D844 voltage regulator

    a6583

    Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
    Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R8000T0 M30L0R8000B0 54MHz a6583 CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0

    Untitled

    Abstract: No abstract text available
    Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


    Original     		PDF OMAP5912 SPRS231E SPRS231D SPRS231E. 289-ball

    PSRAM

    Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA
    Text: M36L0R8060T1 M36L0R8060B1 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


    Original     		PDF M36L0R8060T1 M36L0R8060B1 M36L0R8060T1: 880Dh M36L0R8060B1: 880Eh 54MHz PSRAM RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA

    Untitled

    Abstract: No abstract text available
    Text: M30L0R8000T2 M30L0R8000B2 256 Mbit x16, multiple bank, multilevel, burst 1.8 V supply Flash memory Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M30L0R8000T2 M30L0R8000B2

    t3383

    Abstract: No abstract text available
    Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R8000T0 M30L0R8000B0 54MHz t3383

    w16 72

    Abstract: DES Encryption TMS320
    Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


    Original     		PDF OMAP5912 SPRS231E SPRS231D SPRS231E. 289-ball w16 72 DES Encryption TMS320

    D844 voltage regulator

    Abstract: 9427h 9216h
    Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


    Original     		PDF OMAP5912 SPRS231E SPRS231D SPRS231E. 289-ball D844 voltage regulator 9427h 9216h

    d2f3

    Abstract: EG20T delta dps 298 cp 2A DSCA 114 communication board B43200 MSI 7680 Ver 5.1 Intel ATX smps circuit diagram Intel Atom E6xx SMPS 666 VER 2.3
    Text: Intel Platform Controller Hub EG20T Datasheet January 2011 Order Number: 324211-003US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL’S TERMS AND CONDITIONS


    Original     		PDF EG20T 324211-003US EG20T EG20T--Ballout d2f3 delta dps 298 cp 2A DSCA 114 communication board B43200 MSI 7680 Ver 5.1 Intel ATX smps circuit diagram Intel Atom E6xx SMPS 666 VER 2.3

    CR10

    Abstract: 4047N
    Text: M30L0T8000T0 M30L0T8000B0 256 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V core, 3V I/O Flash memory Feature summary • ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 2.2V to 3.6V for I/O Buffers – VPP = 9V for fast program (12V tolerant)


    Original     		PDF M30L0T8000T0 M30L0T8000B0 52MHz LFBGA88 CR10 4047N

    mmc 4050

    Abstract: No abstract text available
    Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


    Original     		PDF OMAP5912 SPRS231E SPRS231D SPRS231E. 289-ball mmc 4050

    7900f-d

    Abstract: No abstract text available
    Text: M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 2 x 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 2 dice of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


    Original     		PDF M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 M36LLR8860T1: 880Dh M36LLR8860D1: 880Eh 7900f-d

    D438 F28

    Abstract: D844 voltage regulator D880 1408 9618H 7410 40E4 BE12h F21Ah 8e18h K D882 Y 139 codebook transistor
    Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


    Original     		PDF OMAP5912 SPRS231E SPRS231D SPRS231E. 289-ball D438 F28 D844 voltage regulator D880 1408 9618H 7410 40E4 BE12h F21Ah 8e18h K D882 Y 139 codebook transistor

    M58LR256KB

    Abstract: M58LR128KB
    Text: M58LR128KT M58LR128KB M58LR256KT M58LR256KB 128 or 256 Mbit x16, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features „ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers


    Original     		PDF M58LR128KT M58LR128KB M58LR256KT M58LR256KB M58LR128KT/B M58LR256KT/B M58LR256KB

    CR10

    Abstract: J-STD-020B M30L0R8000B0 M30L0R8000T0 JEDEC J-STD-020B
    Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R8000T0 M30L0R8000B0 54MHz CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0 JEDEC J-STD-020B

    M30L0R8000T

    Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36LLR8860D1
    Text: M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 2 x 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 2 dice of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


    Original     		PDF M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 M36LLR8860T1: 880Dh M36LLR8860D1: 880Eh M30L0R8000T RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36LLR8860D1

    D844 voltage regulator

    Abstract: DES Encryption TMS320 tms320 sd D882 TRANSISTOR circuit example AA19 OMAP5912 GSM modem M10 d438 transistor AN 7818 voltage regulator K d998 transistor
    Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


    Original     		PDF OMAP5912 SPRS231E SPRS231D SPRS231E. 289-ball D844 voltage regulator DES Encryption TMS320 tms320 sd D882 TRANSISTOR circuit example AA19 GSM modem M10 d438 transistor AN 7818 voltage regulator K d998 transistor

    D844 voltage regulator

    Abstract: K d998 transistor j 5804 f11 9405h DES Encryption TMS320
    Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


    Original     		PDF OMAP5912 SPRS231E SPRS231D SPRS231E. 289-ball D844 voltage regulator K d998 transistor j 5804 f11 9405h DES Encryption TMS320

    M58LR256KB

    Abstract: M58LR128KB M58LR128KT CR10 M58LR256KT 4047N
    Text: M58LR128KT M58LR128KB M58LR256KT M58LR256KB 128 or 256 Mbit x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers


    Original     		PDF M58LR128KT M58LR128KB M58LR256KT M58LR256KB M58LR128KT/B M58LR256KT/B M58LR256KB M58LR128KB CR10 4047N

    BE06

    Abstract: CC08h
    Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


    Original     		PDF OMAP5912 SPRS231E SPRS231D SPRS231E. 289-ball BE06 CC08h

    M36L0T8060

    Abstract: flash E2p M69KW096B
    Text: M36L0T8060T1 M36L0T8060B1 256 Mbit 16 Mb x16, multiple bank, multilevel, burst Flash memory and 64 Mbit PSRAM, 1.8 V core, 3 V I/O supply, multichip package Features Multichip package • 1 die of 256 Mbit (16 Mb ×16, multiple bank, multilevel, burst) Flash memory


    Original     		PDF M36L0T8060T1 M36L0T8060B1 M36L0T8060T1: 880Dh M36L0T8060B1: 880Eh TFBGA88 M36L0T8060 flash E2p M69KW096B

    M69KR096A

    Abstract: J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B0 M36L0R8060T0
    Text: M36L0R8060T0 M36L0R8060B0 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


    Original     		PDF M36L0R8060T0 M36L0R8060B0 M36L0R8060T0: 880Dh M36L0R8060B0: 880Eh 54MHz M69KR096A J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B0 M36L0R8060T0

    DB42

    Abstract: No abstract text available
    Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


    Original     		PDF OMAP5912 SPRS231E SPRS231D SPRS231E. 289-ball DB42

    EG20T

    Abstract: delta dps 240 Fb Intel ATX smps circuit diagram Atom E6xx SMPS 666 VER 2.3
    Text: Intel Platform Controller Hub EG20T Datasheet August 2011 Order Number: 324211-007US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL’S TERMS AND CONDITIONS


    Original     		PDF EG20T 324211-007US EG20T EG20T--Ballout delta dps 240 Fb Intel ATX smps circuit diagram Atom E6xx SMPS 666 VER 2.3