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Siemens 3RA68900EA COMPACT STARTER PE EXPANSION PLU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	3RA68900EA	Box	1		1	1 $25.93 10 $22.646 100 $19.7818 1000 $17.99764 10000 $17.99764	Buy Now
Mouser Electronics	3RA68900EA					1 $25.53 10 $22.64 100 $19.74 1000 $18.65 10000 $18.65	Get Quote
Vishay Siliconix SI8900EDB-T2-E1 MOSFET 2N-CH 20V 5.4A 10MFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI8900EDB-T2-E1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI8900EDB-T1 Transistor MOSFET Array Dual N-Channel 20V 5.4A 10-Pin Micro Foot T/R - Tape and Reel (Alt: SI8900EDB-T1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI8900EDB-T1	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.6974	Buy Now
SiTime Corporation SIT1408BC-13-33N-29.908900E OSCILLATOR, SIT1408, -20 to 70C, 2520, 50ppm, 3.3V, 29.9089MHz, OE, T&R - Tape and Reel (Alt: SIT1408BC-13-33N-2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIT1408BC-13-33N-29.908900E	Reel		12 Weeks	1,000	1 - 10 - 100 - 1000 $0.60851 10000 $0.60851	Buy Now
SiTime Corporation SIT8008BC-13-33E-29.908900E PROGRAMMABLE, LOW POWER OSCILLATOR, -20 TO 70C, 2520, 50PPM, 3.3V, 29.9089MHZ, OE, SMD - Tape and Reel (Alt: SIT8008BC-13-33E-2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIT8008BC-13-33E-29.908900E	Reel		12 Weeks	1,000	1 - 10 - 100 - 1000 $0.60851 10000 $0.60851	Buy Now

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8900E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
8900E Abstract: Si8900EDB Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: 8900EDB MICRO FOOTr 2X5: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method 8900EDB T2 Device on Tape Orientation 8900E xxx 8900E xxx 8900E	Original	PDF	Si8900EDB 275-mm 8900E Specification--PACK-0023-2 S-50073, 8900E
8900E Abstract: J-STD-020A Si8900EDB sn 4060 Text: 8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V	Original	PDF	Si8900EDB S-21474--Rev. 26-Aug-02 8900E J-STD-020A sn 4060
S1 0780 Abstract: 10-BUMP 8900E J-STD-020A Si8900EDB Text: 8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 IS1S2 (A) 0.024 @ VGS = 4.5 V 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View MICRO FOOT	Original	PDF	Si8900EDB 8900E 08-Apr-05 S1 0780 10-BUMP 8900E J-STD-020A
Untitled Abstract: No abstract text available Text: 8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier	Original	PDF	Si8900EDB 8900E 8900E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Si8407DB Abstract: Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB Si8401DB Si8405DB Si8900EDB Text: Device Orientation—MICRO FOOTrPackages Vishay Siliconix Part Number Index APPENDIX AĊMOSFETS Part Number APPENDIX BĊANALOG ICS Appendix Part Number Appendix Si8401DB A -1 DG3000DB B -1 Si8405DB A -1 DG3001DB B -2 Si8407DB A -2 DG3408DB B -3 8900EDB A -3	Original	PDF	Si8401DB DG3000DB Si8405DB DG3001DB Si8407DB DG3408DB Si8900EDB DG3409DB Si8902EDB S-31635--Rev. Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB
Untitled Abstract: No abstract text available Text: 8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier	Original	PDF	Si8900EDB 8900E 8900E 11-Mar-11
S1 0780 Abstract: 8900E J-STD-020A Si8900EDB Text: 8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.40 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V	Original	PDF	Si8900EDB S-20802--Rev. 01-Jul-02 S1 0780 8900E J-STD-020A
10-BUMP Abstract: 8900E Si8900EDB ks-110 Text: 8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier	Original	PDF	Si8900EDB 8900E 18-Jul-08 10-BUMP 8900E ks-110
31916 Abstract: No abstract text available Text: 8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V	Original	PDF	Si8900EDB 8900E 8900E S-31916--Rev. 15-Sep-03 31916
Untitled Abstract: No abstract text available Text: 8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier	Original	PDF	Si8900EDB 8900E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
10-BUMP Abstract: 8900E J-STD-020A Si8900EDB Text: 8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 IS1S2 (A) 0.024 @ VGS = 4.5 V 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View MICRO FOOT	Original	PDF	Si8900EDB 8900E S-50066--Rev. 17-Jan-05 10-BUMP 8900E J-STD-020A
Untitled Abstract: No abstract text available Text: 8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) rSS(on) (W) 20 0.024 @ VGS = 4.5 V 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 APPLICATIONS 0.40 @ VGS = 1.8 V 5.5 D Battery Protection Circuit	Original	PDF	Si8900EDB 8900E 8900E 10BUMP S-20217--Rev.
Untitled Abstract: No abstract text available Text: 8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.40 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V	Original	PDF	Si8900EDB 8900E 8900E S-21338--Rev. 05-Aug-02
D 5888 s Abstract: SA 5888 Text: 13 ENG. NO. 30 0 6 8 - E D P . NO. D IM . " A " REF. 15-97-6 04 30O68- 15-97- 3 0 0 6 8 -8 15-97-6 30068-10 15-97-6101 30068-1. 15-97-6 8 T 6 1 30068 3 1 (12.60 .66 I (16.80) 2 NOTES; D IM . "B" L MATERIAL; U N F ILLED P O L Y E S T E R , U.L. 94V-0. 2. COLOR; M O L D E D	OCR Scan	PDF	30O683 PS-5556-003. D 5888 s SA 5888