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    894 TRANSISTOR Search Results

    894 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    894 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    zener diode 5v

    Abstract: PD57070S ATC100B DB-900-60W
    Text: DB-900-60W 60W / 26V / 869-894 MHz using 1x PD57070S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 60W WITH 13 dB GAIN OVER 869 894 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER Description


    Original     		PDF DB-900-60W PD57070S DB-900-60W IS-54/-136 IS-95 zener diode 5v PD57070S ATC100B

    10MF 35V

    Abstract: AN060 XD010-42S-D4F
    Text: XD010-42S-D4F Y XD010-42SD4F(Y) 869 MHz to 894 MHz Class A 869 MHz to 894 MHz CLASS A NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: D Product Description Features „ „ „ Available in RoHS Compliant Packaging 50 Ω RF Impedance


    Original     		PDF XD010-42S-D4F XD010-42SD4F AN-060 EDS-102938 10MF 35V AN060

    capacitor 47pf

    Abstract: SMD Transistor w30
    Text: DB-900-60W 60W / 26V / 869-894 MHz using 1x PD57070S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 60W WITH 13 dB GAIN OVER 869 894 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER Description


    Original     		PDF DB-900-60W PD57070S DB-900-60W IS-54/-136 IS-95 capacitor 47pf SMD Transistor w30

    104208

    Abstract: GSM repeater power amplifier module AN054 1042-08 SDM-08060-B1F high power fet amplifier schematic EDS-104208 SDM-08060
    Text: SDM-08060-BIF Y SDM-08060BIF(Y)869 MHz to 894 MHz Class AB 65 W Power Amplifier Module 869 MHz to 894 MHz CLASS AB 65 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: B Product Description Features


    Original     		PDF SDM-08060-BIF SDM-08060BIF SDM-08060-B1F AN054, EDS-104208 104208 GSM repeater power amplifier module AN054 1042-08 high power fet amplifier schematic SDM-08060

    SDM-08120

    Abstract: 08120 GAN temperature compensation AN067
    Text: SDM-08120 Y SDM-08120(Y) 869 MHz to 894 MHz Class AB 130 W Power Amplifier Module 869 MHz to 894 MHz CLASS AB 130 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Product Description Features „ „ „ Available in RoHS Compliant


    Original     		PDF SDM-08120 unit-to-uni04208 AN054, EDS-104208 08120 GAN temperature compensation AN067

    3 wire pt100 sensor

    Abstract: PT100 3 wire connected diagram Ni1000 CONVERSION TABLE CISPR22 L type thermocouple conversion table MCR-TTL-RS232 KTY 81-110 philips ni1000 Ni1000 temperature sensor Cu50 measurement
    Text: 2002-07-05 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 76-894-09 Temp omvandlare typ MCR-T MCR-T-UI-E-NC 76-894-90 Programmeringskabel MCR-T MCR-TTL-RS232-E MCR-T-UI -E .


    Original     		PDF MCR-TTL-RS232-E PT100: 3 wire pt100 sensor PT100 3 wire connected diagram Ni1000 CONVERSION TABLE CISPR22 L type thermocouple conversion table MCR-TTL-RS232 KTY 81-110 philips ni1000 Ni1000 temperature sensor Cu50 measurement

    A01 MMIC

    Abstract: siemens inductor SIEMENS CAPACITOR C5 mmic a01 "Downconverting to 116 MHz" Siemens capacitor 0402 CAPACITOR SIEMENS BFP420 SIEMENS filter resistor 470ohm
    Text: Application Note No. 054 Discrete & RF Semiconductors 869 - 894 MHz Receiver Front End Downconverting to 116 MHz Receiver Front End for 869 MHz to 894 MHz downconverting to 116 MHz including a Low Noise Amplifier with Gainstep and a Mixer with LO Buffer. The LNA stage, a BFP420, can be switched to high and low gain mode by changing the level


    Original     		PDF BFP420, CMY91 BFP183W 10dBm A01 MMIC siemens inductor SIEMENS CAPACITOR C5 mmic a01 "Downconverting to 116 MHz" Siemens capacitor 0402 CAPACITOR SIEMENS BFP420 SIEMENS filter resistor 470ohm

    capicitor

    Abstract: smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19
    Text: PTF 10161 165 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride


    Original     		PDF 220QBK-ND 1-877-GOLDMOS 1522-PTF capicitor smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19

    LDJ2H825M03FA062

    Abstract: No abstract text available
    Text: AWB7225 860 - 894 MHz Small-Cell Power Ampliier Module ADVANCED PRODUCT INFORMATION - Rev 0.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Eficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System


    Original     		PDF AWB7225 AWB7225 LDJ2H825M03FA062

    LM7805

    Abstract: elna 50v BCP56 PTFA082201E PTFA082201F RO4350
    Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in


    Original     		PDF PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt LM7805 elna 50v BCP56 RO4350

    PTFA082201E

    Abstract: RO4350 elna 50v elna capacitor BCP56 LM7805 PTFA082201F ceramic capacitor 39 pf A34 rf 35V ELNA Electrolytic capacitor
    Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in


    Original     		PDF PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt RO4350 elna 50v elna capacitor BCP56 LM7805 ceramic capacitor 39 pf A34 rf 35V ELNA Electrolytic capacitor

    Untitled

    Abstract: No abstract text available
    Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System


    Original     		PDF AWB7125 AWB7125

    Untitled

    Abstract: No abstract text available
    Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.4 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System


    Original     		PDF AWB7125 AWB7125

    Untitled

    Abstract: No abstract text available
    Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Ampliier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Eficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System


    Original     		PDF AWB7125 AWB7125

    LDJ2H825M03FA062

    Abstract: AWB7225 DATE CODE MURATA Hybrid Couplers
    Text: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System


    Original     		PDF AWB7225 AWB7225 LDJ2H825M03FA062 DATE CODE MURATA Hybrid Couplers

    Untitled

    Abstract: No abstract text available
    Text: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29.5 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System


    Original     		PDF AWB7225 AWB7225

    LDJ2H825M03FA062

    Abstract: AWB7225 AWB7225P8
    Text: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System


    Original     		PDF AWB7225 AWB7225 LDJ2H825M03FA062 AWB7225P8

    AWB7

    Abstract: No abstract text available
    Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System


    Original     		PDF AWB7125 AWB7125 AWB7

    Untitled

    Abstract: No abstract text available
    Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System


    Original     		PDF AWB7125 AWB7125

    p 1703 bds

    Abstract: No abstract text available
    Text: PTFA082201E PTFA082201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are thermally-enhanced, 220-watt, internally-matched GOLDMOS FETs intended for CDMA and WCDMA applications. They are characaterized for two-carrier


    Original     		PDF PTFA082201E PTFA082201F 220-watt, H-30260-2 H-31260-2 p 1703 bds

    Untitled

    Abstract: No abstract text available
    Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System


    Original     		PDF AWB7125 AWB7125

    Untitled

    Abstract: No abstract text available
    Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System


    Original     		PDF AWB7125 AWB7125

    TRANSISTOR CW 7808

    Abstract: cw 7808 PDC140 7808 cw NPN transistor 2n2222 BLF0810-180 Transistor 2N2222 2N2222 ATC100A ATC100B
    Text: Application Note BLF0810-180; Linear LDMOS amplifier for multi carrier applications in the 869-894 MHz frequency band By Yong Yang, Igor Blednov and Barney Arntz gain and good gain flatness and phase linearity over the band of interest. The device is available


    Original     		PDF BLF0810-180; OT502 AN01002 TRANSISTOR CW 7808 cw 7808 PDC140 7808 cw NPN transistor 2n2222 BLF0810-180 Transistor 2N2222 2N2222 ATC100A ATC100B

    08120

    Abstract: SDM-08120
    Text: SDM-08120 Product Description 869-894 MHz Class AB 120W Power Amplifier Module The SDM-08120 120W power module is an impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a


    Original     		PDF SDM-08120 SDM-08120 AN054, EDS-103346 08120