9418a
Abstract: irf 418a IRFN450
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.418A HEXFET POWER MOSFET IRFN450 N-CHANNEL Ω HEXFET 500 Volt, 0.415Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
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IRFN450
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irf 418a
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IRFN440
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1552 HEXFET POWER MOSFET IRFN440 N-CHANNEL Ω HEXFET 500 Volt, 0.85Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
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IRFN440
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smd 2f
Abstract: IRFN440
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1552 HEXFET POWER MOSFET IRFN440 N-CHANNEL Ω HEXFET 500 Volt, 0.85Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
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IRFN440
smd 2f
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9418a
Abstract: IRFN450
Text: Provisional Data Sheet No. PD-9.418A HEXFET POWER MOSFET IRFN450 N-CHANNEL Ω HEXFET 500 Volt, 0.415Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
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IRFN450
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IRFN450
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FR07* diode
Abstract: FR07
Text: j pj j-0 f flQfjonO I Provisional Data Sheet No. PD-9.418A IOR Rectifier HEXFET POWER MOSFET IRFN450 N - CHA N N E L Product Summary Part Number I 500 Volt, 0.415ft HEXFET H EXFET technology is the key to International Rectifier’s advanced line of power M O S F E T transistors.The effi
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415ft
415C2
4ASS452
24TGb
FR07* diode
FR07
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motor IG 2200 19
Abstract: 2N7228U IRFN450 JANTX2N7228U JANTXV2N7228U
Text: PD-90418B IRFN450 JANTX2N7228U HEXFET POWER MOSFET JANTXV2N7228U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 500 Volt, 0.415Ω Product Summary Part Number IRFN450 ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power
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PD-90418B
IRFN450
JANTX2N7228U
JANTXV2N7228U
MIL-PRF-19500/592]
motor IG 2200 19
2N7228U
IRFN450
JANTX2N7228U
JANTXV2N7228U
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HFA16TA60C
Abstract: IRFP250 transistor sec 623
Text: Bulletin PD-2.342 rev. A 11/00 HFA16TA60C HEXFRED Ultrafast, Soft Recovery Diode TM 2 Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.7V Qrr *= 65nC di(rec)M/dt * = 240A/µs
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HFA16TA60C
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IRFP250
transistor sec 623
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8a 905 surface mount transistor
Abstract: No abstract text available
Text: Bulletin PD-2.606 rev. A 11/00 HFA16PA60C HEXFRED Ultrafast, Soft Recovery Diode TM 2 Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF = 1.7V Qrr * = 65nC Benefits
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HFA16PA60C
HFA16PA60C
8a 905 surface mount transistor
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IR 1838 T
Abstract: IR 1838 IR 1838 3v HFA16PB120 IRFP250 vs 1838 b
Text: Bulletin PD -2.364 rev. B 11/00 HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.3V 4
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HFA16PB120
260nC
HFA16PB120
IR 1838 T
IR 1838
IR 1838 3v
IRFP250
vs 1838 b
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9936 transistor
Abstract: IR 1838 T IR 1838 3v diode 838 HFA16TB120 IRFP250 IR 1838
Text: Bulletin PD -2.492 rev. A 11/00 HFA16TB120 HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V VF typ. * = 2.3V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits
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260nC
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9936 transistor
IR 1838 T
IR 1838 3v
diode 838
IRFP250
IR 1838
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555 triangular wave
Abstract: transistor IRF 630 IRG4BC10S
Text: PD - 91786 IRG4BC10S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in
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O-220AB
O-220AB
555 triangular wave
transistor IRF 630
IRG4BC10S
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ULTRAFAST RECTIFIER 16A 600V vf 1.7
Abstract: HFA16TA60C 16A60 IRFP250
Text: Bulletin PD-2.342 rev. A 11/00 HFA16TA60C HEXFRED Ultrafast, Soft Recovery Diode TM 2 Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.7V Qrr *= 65nC di(rec)M/dt * = 240A/µs
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HFA16TA60C
HFA16TA60C
12-Mar-07
ULTRAFAST RECTIFIER 16A 600V vf 1.7
16A60
IRFP250
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IR 1838 T
Abstract: IR 1838 3v IR 1838 T datasheet 8A15 IR 1838 T transistor IR 1838
Text: Preliminary Data Sheet PD -2.360 rev. A 11/00 HFA32PA120C HEXFRED Ultrafast, Soft Recovery Diode TM per Leg Features • • • • • VR = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. = 2.3V
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HFA32PA120C
260nC
HFA32PA120C
IR 1838 T
IR 1838 3v
IR 1838 T datasheet
8A15
IR 1838 T transistor
IR 1838
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HFA16TA60C
Abstract: No abstract text available
Text: Bulletin PD-2.342 rev. A 11/00 HFA16TA60C HEXFRED Ultrafast, Soft Recovery Diode TM 2 Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.7V Qrr *= 65nC di(rec)M/dt * = 240A/µs
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HFA16TA60C
HFA16TA60C
08-Mar-07
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hexing test
Abstract: IRHN7150 IRHN8150
Text: Provisional Data Sheet No. PD-9.720A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7150 IRHN8150 HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, MEGA RAD HARD HEXFET 100 Volt, 0.055Ω International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation
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hexing test
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IRHN7130
Abstract: IRHN8130
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.821A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7130 IRHN8130 HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 100 Volt, 0.18Ω International Rectifier’s MEGA RAD HARD technology
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IRHN8250
Abstract: IRHN7250
Text: Provisional Data Sheet PD 9.679C IRHN7250 IRHN8250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 200 Volt, 0.10Ω International Rectifier’s MEGA RAD HARD technology HEXFET power MOSFETs demonstrate excellent
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IRHN7250
IRHN8250
F-360
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IRHN7150
Abstract: IRHN8150
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.720A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7150 IRHN8150 HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, MEGA RAD HARD HEXFET 100 Volt, 0.055Ω International Rectifier’s MEGA RAD HARD technology
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IRHN7130
Abstract: IRHN8130
Text: Provisional Data Sheet No. PD-9.821A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7130 IRHN8130 HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 100 Volt, 0.18Ω International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation
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IRHN7130
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8a 905 surface mount transistor
Abstract: IRG4BC10SD Transistor Mosfet N-CH 400V 40A
Text: PD -91784 IRG4BC10SD PRELIMINARY Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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O-220AB
8a 905 surface mount transistor
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Transistor Mosfet N-CH 400V 40A
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IR 1838 T
Abstract: IR 1838 3v 9307-1 HFA16PB120 IRFP250 IR 1838 T transistor D207 VISHAY transistor 2364
Text: Bulletin PD -2.364 rev. B 11/00 HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.3V 4
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12-Mar-07
IR 1838 T
IR 1838 3v
9307-1
IRFP250
IR 1838 T transistor
D207 VISHAY
transistor 2364
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HFA16TA60C
Abstract: IRFP250
Text: PD -2.342 HFA16TA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.7V Qrr * = 65nC Benefits di rec M/dt * = 240A/µs
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F347
Abstract: IRHN7250 IRHN8250
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet PD 9.679C IRHN7250 IRHN8250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 200 Volt, 0.10Ω International Rectifier’s MEGA RAD HARD technology
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F347
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IRHN8250
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smd U1p
Abstract: diode smd ed 49 Diode SMD ED 0B u1p smd
Text: Provisional Data Sheet No. PD-9.1553A International I«R Rectifier HEXFET POWER MOSFET IRFN9140 P -C H A N N E L Product Summary -100Volt,0.20£2 HEXFET H E X F E T te c h n o lo g y is th e key to In te rn a tio n a l Rectifier’s advanced line of power MOSFET transis
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smd U1p
diode smd ed 49
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u1p smd
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