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    8A RF AMPLIFIER Search Results

    8A RF AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HA7-5137A-5 Rochester Electronics LLC HA7-5137 - Operational Amplifier Visit Rochester Electronics LLC Buy
    HA7-5221-5 Rochester Electronics LLC HA7-5221 - Operational Amplifier Visit Rochester Electronics LLC Buy
    HA2-5102-5 Rochester Electronics LLC HA2-5102 - Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-2542-2 Rochester Electronics LLC HA1-2542 - Operational Amplifier Visit Rochester Electronics LLC Buy
    HA2-2541-2 Rochester Electronics LLC HA2-2541 - Operational Amplifier Visit Rochester Electronics LLC Buy

    8A RF AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TB-137

    Abstract: SR704 F240 tb137
    Text: POLYFET RF DEVICES ANALOG/DIGITAL BROADCAST TV Band-3 AMPLIFIER TB-137 SR704 PO VS PIN F=170 MHZ; IDQ=.8A; VDS=28V 240 20 19 18 17 160 1dB compression = 160W Pout 16 120 15 Gain 14 80 GAIN IN DB POUT IN WATTS 200 13 Efficiency = 70% 12 40 11 10 5 10 15 20


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    TB-137 SR704 TB-137/SR704 F240 tb137 PDF

    PHM017-3

    Abstract: Polyfet RF Devices TETRA radio
    Text: polyfet rf devices PHM017-3 Power RF Amplifiers Power = 10.0 Watts Bandwidth = 400 to 450 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The PHM017-3 is a 10 Watt FM / 2 Watt AM amplifier module covering a bandwidth of 400-450 Mhz. It has a high IP3 rating when


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    PHM017-3 PHM017-3 450MHz Polyfet RF Devices TETRA radio PDF

    Untitled

    Abstract: No abstract text available
    Text: RF POWER AMPLIFIER • Class A Linear Solid-State Amplifier ■ Broadband Frequency:9kHz~250MHz ■ Output Power :100W min. @1dB Comp. R&K-A009K251-5050R SPECIFICATIONS @+25℃ OUTLINE DRAWING Frequency Range Small Signal Gain Gain Flatness Output Power


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    250MHz K-A009K251-5050R A009K251-5050R 250MHzã 10MHz 100MHz 150MHz 200MHz PDF

    Polyfet RF Devices

    Abstract: PHM012 Polyfet
    Text: polyfet rf devices PHM012 Power RF Amplifiers Power = 5 Watts Bandwidth = 340 to 370 Mhz Gain = 25 dB Vdd = 10 Volts 50 ohms Input/Output Impedance Description The PHM012 is a two stage amplifier specifically designed military and commercial bandwidths. This amplifier can


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    PHM012 PHM012 370MHz, 10Vdc, Polyfet RF Devices Polyfet PDF

    Polyfet RF Devices

    Abstract: PHM010
    Text: polyfet rf devices PHM010 Power RF Amplifiers Power = 20 Watts Bandwidth = 290 to 320 Mhz Gain = 27 dB Vdd =12.5 Volts 50 ohms Input/Output Impedance Description The PHM010 is a two stage amplifier specifically designed military and commercial bandwidths. This amplifier can


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    PHM010 PHM010 20Watts. Sy3012 320MHz, Polyfet RF Devices PDF

    TB379

    Abstract: No abstract text available
    Text: HA-2500/883 April 2002 Precision High Slew Rate Operational Amplifier Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. HA-2500/883 is a monolithic operational amplifier which is


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    HA-2500/883 MIL-STD883 HA-2500/883 TB379 PDF

    C1-D18

    Abstract: SR-25 TB379
    Text: T E PRODUC OBSOLET CEMENT A L P ED RE D N t E M M O rt Center a NO REC ical Suppo il.com/tsc n h c e T r u w.inters contact o RSIL or ww 1-888-INTE September 2004 HA-2500/883 Precision High Slew Rate Operational Amplifier Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of


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    1-888-INTE HA-2500/883 MIL-STD883 HA-2500/883 C1-D18 SR-25 TB379 PDF

    Untitled

    Abstract: No abstract text available
    Text: HA-2520/883 HA-2522/883 S E M I C O N D U C T O R Uncompensated, High Slew Rate Operational Amplifiers July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.


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    HA-2520/883 HA-2522/883 MIL-STD883 HA-2520/883 HA-2522/883 HA-2520/883) 100Vups HA-2520/883, HA-2520/883: PDF

    HA-2500/883

    Abstract: No abstract text available
    Text: HA-2500/883, HA-2502/883 S E M I C O N D U C T O R Precision High Slew Rate Operational Amplifiers July 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. HA-2500/883 and HA-2502/883 comprise a series of monolithic operational amplifiers whose designs are optimized to


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    HA-2500/883, HA-2502/883 MIL-STD883 HA-2500/883 HA-2502/883 HA-2500/883) 350kHz 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: HA-2500/883 HA-2502/883 Precision High Slew Rate Operational Amplifiers July 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. HA-2500/883 and HA-2502/883 comprise a series of monolithic operational amplifiers whose designs are optimized to


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    HA-2500/883 HA-2502/883 MIL-STD883 HA-2500/883 HA-2502/883 HA-2500/883) 350kHz PDF

    HA2-2520/883

    Abstract: No abstract text available
    Text: HA-2520/883 HA-2522/883 Uncompensated, High Slew Rate Operational Amplifiers July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. Description The HA-2520/883 and HA-2522/883 are monolithic operational amplifiers which deliver an unsurpassed


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    HA-2520/883 HA-2522/883 MIL-STD883 HA-2520/883 HA-2522/883 HA-2520/883) HA2-2520/883 PDF

    EQUIVALENT TRANSISTOR bc109c

    Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


    OCR Scan
    2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 EQUIVALENT TRANSISTOR bc109c TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: V*G£g HA-2520/883 HA-2522/883 U ncom pensated, High S le w Rate Operational Amplifiers juiy 1994 Description Features This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. Description The HA-2520/883 and HA-2522/883 are mono­


    OCR Scan
    MIL-STD883 HA-2520/883) 10MHz 20MHz 200ns HA-2520/883 HA-2522/883 HA-2520/883, PDF

    SR-25

    Abstract: TB379
    Text: HA-2520/883 UC T NT PROD E T E C EM E L OBSO DED REPLA enter at EN rt C COMM nical Suppo il.com/tsc Sheet October 11, 2004 NO RE Data h r c es e ww.int t our T contac TERSIL or w IN 1- 888 Uncompensated, High Slew Rate Operational Amplifier FN3735.3 Features


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    HA-2520/883 FN3735 HA-2520/883 SR-25 TB379 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¡Si H a r r is U J HA-2520/883 HA-2522/883 SEMICONDUCTOR Uncompensated, High Slew Rate Operational Amplifiers ju iy 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1.


    OCR Scan
    HA-2520/883 HA-2522/883 HA-2522/883 HA-2522/883) HA-2520/883, HA-2520/883: HA-2522/883: HA-2520/683, PDF

    SR-25

    Abstract: ha2252
    Text: HA-2520/883 HA-2522/883 Uncompensated, High Slew Rate Operational Amplifiers March 2002 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. Description The HA-2520/883 and HA-2522/883 are monolithic operational amplifiers which deliver an unsurpassed


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    HA-2520/883 HA-2522/883 MIL-STD883 HA-2520/883 HA-2522/883 HA-2520/883) SR-25 ha2252 PDF

    Untitled

    Abstract: No abstract text available
    Text: OR HA-2510/883 HA-2512/883 H a r r i s semi conductor juiy 1994 High Slew Rate Operational Amplifiers Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HA-2510/883 and HA-2512/883 are a series of high per­


    OCR Scan
    HA-2510/883 HA-2512/883 MIL-STD883 HA-2510/883 HA-2512/883 HA-2510/883, 483nm HA-2510/883: HA-2512/883: PDF

    Untitled

    Abstract: No abstract text available
    Text: HA-2529/883 3 Uncompensated, High Slew Rate High Output Current, Operational Amplifier Features Description • This Circuit is Processed in Accordance to MILSTD-S83 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-2529/883 is a monolithic operational amplifier which


    OCR Scan
    MILSTD-S83 35V/ns 15MHz 20MHz 130MQ HA-2529/883 HA-2529/883 HA-2529/B83 PDF

    ha2252

    Abstract: 883U
    Text: HA-2529/883 fÇ j HARRIS S E M I C O N D U C T O R U ncom pensated, High Slew Rate High Output Current, Operational Amplifier juiy 1997 Features • Description This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1.


    OCR Scan
    HA-2529/883 HA-2529/883 200ns 15MHz -67mV -200m HA7-2529/883 HA2-2529/883 N4002 ha2252 883U PDF

    1N4002 diode download datasheet

    Abstract: SR-25 TB379
    Text: HA-2510/883 High Slew Rate Operational Amplifier October 26, 2004 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-2510/883 is a high performance operational amplifier which sets the standards for maximum slew rate and


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    HA-2510/883 MIL-STD883 HA-2510/883 750kHz 1N4002 diode download datasheet SR-25 TB379 PDF

    MGFS45V2735

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFS45V2735 MGFS45V2735 -45dBc 25deg PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFC45V3642A MGFC45V3642A -45dBc 25deg June/2004 PDF

    MGFC45V3642A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : m m O U TLIN E The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFC45V3642A MGFC45V3642A -45dBc /25deg June/2004 PDF

    TB379

    Abstract: No abstract text available
    Text: HA-2510/883 Data Sheet January 3, 2006 FN3697.4 High Slew Rate Operational Amplifier Features The HA-2510/883 is a high performance operational amplifier which sets the standards for maximum slew rate and wide bandwidth operation in moderately powered,


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    HA-2510/883 FN3697 HA-2510/883 MIL-STD-883 750kHiption TB379 PDF