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    8A SF DIODE Search Results

    8A SF DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    8A SF DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG8G4GM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The D rain is Isolated from Case. . 4 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low D r a i n-Source ON Resistance


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    140gr Minu00 PDF

    weidmuller eg 01

    Abstract: SB-S11-P1-01-1-1A ess20-124 ESS20-1 DIN Rail Terminal Blocks DIODE MOD E67320 1-24DC din 46244-A6.3-0.8 DIN IEC 60068-2-11 k potential
    Text: Electronic Circuit Breaker with reset input ESS20-1. Description The special device ESS20-1. is a further extension of the product line “electronic circuit breakers”. Type ESS20-1. has a width of only 12.5 mm and selectively protects all DC 24 V loads through a combination


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    ESS20-1. 17plus, ESS20-124 17-P10-Si 10-way) weidmuller eg 01 SB-S11-P1-01-1-1A ESS20-1 DIN Rail Terminal Blocks DIODE MOD E67320 1-24DC din 46244-A6.3-0.8 DIN IEC 60068-2-11 k potential PDF

    MC33186DH1

    Abstract: MC33887 44QFN HSOP20 motorola automotive power transistor 44-QFN MC33186DH motorola 747
    Text: MOTOROLA Order number: MC33887/D Rev. 0, 06/2001 Semiconductor Technical Data Advance Information Automotive HBRIDGE MC33887 The MC33887 is a new integrated power H–Bridge targeted for automotive DC motor control, such as Throttle Control or door lock application similar to the MC33186DH1 in the HSOP20 package version.


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    MC33887/D MC33887 MC33887 MC33186DH1 HSOP20 120mW 225mW 44QFN motorola automotive power transistor 44-QFN MC33186DH motorola 747 PDF

    7A SF SC 30

    Abstract: ESX10-103 uP 6308 AD ESX10 SB-S11-P1-01-1-1A ESX10-127 ESX10-104 17PLUS-Q02-00 17PLUS-QA0-LR 5A SF SC 30
    Text: Electronic Circuit Protector ESX10 Description Electronic circuit protector type ESX10 is designed to ensure selective disconnection of DC 24 V load systems. DC 24 V power supplies, which are widely used in industry today, will shut down the output in the event of an overload with the result that


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    ESX10 ESX10 7A SF SC 30 ESX10-103 uP 6308 AD SB-S11-P1-01-1-1A ESX10-127 ESX10-104 17PLUS-Q02-00 17PLUS-QA0-LR 5A SF SC 30 PDF

    SF126

    Abstract: transistor SD335 SD349 SSY20 SF829 SD 338 SF826 mikroelektronik Berlin SD339 SD338
    Text: Der Kollektor ist mit der metallischen Montageflache leitend verbunden Uw e Beier Transistoren aus dem Kombinat Mikroelektronik electrónica • Band 245 UWE BEIER Transistoren aus dem Kombinat M ikroelektronik M ILITARVERLAG DER DEUTSCHEN DEM OKRATISCHEN


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    PDF

    HSOP20

    Abstract: MC33186DH1 sf transistor 8A SF diode MC33186 motorola automotive transistor MC33186 application note
    Text: MOTOROLA MC33186 SEMICONDUCTOR TECHNICAL DATA Automotive H-Bridge Driver Datasheet SILICON MONOLITHIC INTEGRATED CIRCUIT Automotive H-Bridge Driver ¥ Operating Supply Voltage 5V to 28V ¥ Overvoltage Protection against Transients up to 40V at Vbat ¥ RDSon = 150mW for each Output Transistor at 25°C


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    MC33186 150mW HSOP20 MC33186DH1 sf transistor 8A SF diode MC33186 motorola automotive transistor MC33186 application note PDF

    HSOP20

    Abstract: HSOP-20 MC33186 MC33186DH1R2
    Text: Rev: 3.3 Date: 13 Dec 2000 MC33186 Automotive H-Bridge Driver • Operating Supply Voltage 5V to 28V H-BRIDGE DRIVER • Overvoltage Protection against Transients up to 40V at Vbat • RDSon = 150mΩ for each Output Transistor at 25°C SEMICONDUCTOR TECHNICAL DATA


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    MC33186 51A-03 HSOP-20 HSOP20 HSOP-20 MC33186 MC33186DH1R2 PDF

    AD-TX-EM01

    Abstract: ESX10-TD 4616L-160PK esx10-td-101 X22200503 X22261102 ESX10-TA-100-DC24V-0 Sumitomo E4008 phoenix contacts 30 03 34 7 UL2367
    Text: Electronic Circuit Protector ESX10-T.-DC 24 V Description Electronic circuit protector type ESX10-T is designed to ensure selective disconnection of DC 24 V load systems. DC 24 V power supplies, which are widely used in industry today, will shut down the output in the event of an overload with the result that


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    ESX10-T ESX10-T ESX10-T. AD-TX-EM01 AD-TXEM01 AD-TX-EM01 ESX10-TD 4616L-160PK esx10-td-101 X22200503 X22261102 ESX10-TA-100-DC24V-0 Sumitomo E4008 phoenix contacts 30 03 34 7 UL2367 PDF

    T0254AA

    Abstract: T0257AA
    Text: sôe d SEMTECH CORP m 000301S n s DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AA PACKAGE «SET SM1S41 * SM1S01 * These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryilia substrates ensures the lowest possible thermal impedance,


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    000301S T0257AA SM1S41 SM1S01 T0258AA FT0258AA HDS100 T0254AA PDF

    HSOP20

    Abstract: 7A SF 160 e7 MC33186 application note MC33186 MC33186DH1R2
    Text: Rev: 3.3 Date: 13 Dec 2000 Freescale Semiconductor, Inc. MC33186 Automotive H-Bridge Driver • Operating Supply Voltage 5V to 28V H-BRIDGE DRIVER • Overvoltage Protection against Transients up to 40V at Vbat • RDSon = 150mΩ for each Output Transistor at 25°C


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    MC33186 51A-03 HSOP-20 HSOP20 7A SF 160 e7 MC33186 application note MC33186 MC33186DH1R2 PDF

    Untitled

    Abstract: No abstract text available
    Text: ESAC33IC. N . D |8 ai FAST RECOVERY DIODE : Features H ig h vo lta g e by m esa d e s ig n . • K i t *Stt H igh re lia b ility i m m * Connection Diagram • ^ ì é ^ A pplications • a * * a *-f ESAC33-DDC o - ►] 9 1 ESAC33-nnN d ^ ^ -N -


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    ESAC33IC. ESAC33-DDC ESAC33-nnN ESAC33-nDD kegTS30 IZaTS30S3^ S30S3^ l95t/R89 PDF

    f11u

    Abstract: 2sk1916 2SK1916-01R 1916-01R O41 DIODE a2267
    Text: SK1916-01R FUJI PO W ER M O S-F ET N-CHANNEL SILICON POWER MOS-FET F - I I I Features S E R I E S Outline Drawings ►High speed switching ►Low on-resistance ►Mo secondary breakdown ►Low driving power ►High voltage 'V Ge; = ±30V Guarantee •Avalanche-proof


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    2SK1916-01R f11u 2sk1916 2SK1916-01R 1916-01R O41 DIODE a2267 PDF

    AD-TX-EM01

    Abstract: ESX10-TB-127 UL2367 E306740 ESX10-TA-100 ov 2094 67200 E322549
    Text: Datasheet Electronic Circuit Protection ESX10-T selected in fixed values from 0.5 A.12 A. Failure and status indication are provided by a multicolour LED and an integral short-circuit-proof status output or a relay signal contact. Remote operation is possible by


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    ESX10-T ESX10-T. AD-TX-EM01 AD-TXEM01 4/12-LIT0806E AD-TX-EM01 ESX10-TB-127 UL2367 E306740 ESX10-TA-100 ov 2094 67200 E322549 PDF

    ESX10-TA-100

    Abstract: dc switch 24vdc mosfet ESX10-TB-124 ESX10-T High Voltage Bus-bars ESX10-TB-102 Bus-bars
    Text: Datasheet Electronic Circuit Protection ESX10-T selected in fixed values from 0.5 A.12 A. Failure and status indication are provided by a multicolour LED and an integral short-circuit-proof status output or a relay signal contact. Remote operation is possible by


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    ESX10-T LIT0806 ESX10-TA-100 dc switch 24vdc mosfet ESX10-TB-124 ESX10-T High Voltage Bus-bars ESX10-TB-102 Bus-bars PDF

    Untitled

    Abstract: No abstract text available
    Text: 4855452 INTERNATIONAL RE C T IFIER IO R 02E 07870 □007Û7D 7 ^ ô3-c£l Data Sheet No. INTERNATIONAL RECTIFIER MfiSSq5E D p d - z .u 99 |~ R18CF, R18SF, R18CFR AND R18SFR SERIES 2000-1800 VOLTS RANGE REVERSE RECOVERY TIME 2.0//S 90 AMP AVG STUD MOUNTED SOFT FAST RECOVERY RECTIFIER DIODES


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    R18CF, R18SF, R18CFR R18SFR D0-205AC DO-30) D0-205AA R18CF R18SF PDF

    L04A

    Abstract: No abstract text available
    Text: 2SK2654-01 FU JI N-channel MOS-FET FAP-IIS Series 900V > Features - 2Q TO-3P 4.5 M Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - 150W > Outline Drawing High Speed Switching Low On-Resistance


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    2SK2654-01 Vcc-90V; L04A PDF

    2SK2124

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS U nit : mm • Features • Avalanche energy capability guaranteed : EAS > 130mJ • V gss=±30V guaranteed • High-speed switching : t|= 60ns • No secondary breakdown ■ Applications • Non-contact relay


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    2SK2124 130mJ -220E 2SK2124 PDF

    CIRCUIT BREAKER AEG me 800

    Abstract: catalog for 3RT series contactor* siemens Weidmuller upac Telemecanique catalog 9101900000 Siemens 4-20mA Loop Isolator catalog for 3RT Power contactor* siemens upac MCB 10 AMP 87426
    Text: CATALOGUE 10 2006/2007 Short Form Catalogue Quick Reference Guide Company profile Weidmüller is the leading manufacturer of components for electrical and electronic interconnection technologies. The company develops, produces and sells customer-oriented solutions comprising the entire Weidmüller product portfolio.


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTO> TD 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA SEMICONDUCTOR » F | ciDci 7 S S D 90D : 16371 D O lt.371 D TOSHIBA GTR MODULE MG8D6EM1 TECHNICAL DATA 'SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


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    180gr PDF

    Untitled

    Abstract: No abstract text available
    Text: s e MIKROn SKiiP 82 ANB 08 Absolute Maximum Ratings Sym bol C o n d it i o n s 1 V a lu e s U n its 800 35 700 2800 V B ridge Rectifier V rrm Theatsink — 80 °C tp = 10 ms; sin. 180 tp = 10 ms; sin. 180 Id If s m l2t T, = 25 °C Tj = 25 °C A A A 2s MiniSKiiP 8


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SFAF8G 8.0 Amp. Glass Passivated Ultrafast Recovery Rectifier Current 8.0 A Voltage 200 to 600 V ITO-220AC FEATURES • Ultrafast recovery time for high efficiency • Low power losses • Low forward voltage drop • High forward surge current capability


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    ITO-220AC 2011/65/EU 2002/96/EC J-STD-020, ITO-220AC. MIL-STD-750 J-STD-002 JESD22-B102. Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2542 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV] 2SK2542 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS 10.3MAX. g3.6 ±0.2 4V Gate Drive Low Drain-Sorce ON Resistance : RDS(ON = 0-75ß (Typ.)


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    2SK2542 20kfi) PDF

    2f3 transistor

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2847 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2847 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance


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    2SK2847 100//A 2f3 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC3822-1 No RSENSETM, Low Input Voltage, Synchronous Step-Down DC/DC Controller DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Dual N-Channel MOSFET Synchronous Drive No Current Sense Resistor Required Optimized for 3.3VIN and Li-Ion Applications


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    LTC3822-1 250kHz 750kHz 10-Lead LTC3830 500kHz, SSOP-16 LTC3836 28-Lead 38221f PDF