Untitled
Abstract: No abstract text available
Text: 8E110 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 8 Load Current Max. (A)1.1 P(D) Max. (W) Nom. Supp (V)115 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A
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8E110
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Untitled
Abstract: No abstract text available
Text: 8E110-230 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 8 Load Current Max. (A)1.1 P(D) Max. (W) Nom. Supp (V)230 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A
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8E110-230
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FQP45N03L
Abstract: FQP45N03
Text: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
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FQP45N03L
1450pF
O-220AB
FQP45N03L
FQP45N03
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ISL9N307AP3
Abstract: ISL9N307AS3ST N307AS
Text: ISL9N307AP3/ISL9N307AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N307AP3/ISL9N307AS3ST
3000pF
O-263AB
O-220AB
ISL9N307AP3
ISL9N307AS3ST
N307AS
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AN9321
Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
Text: ISL9N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features
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ISL9N312ASK8T
ISL9N312ASK8
MS-012AA
AN9321
AN9322
ISL9N312ASK8T
MS-012AA
TB334
N312AS
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Untitled
Abstract: No abstract text available
Text: PWM Optimized ISL9N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
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ISL9N308AP3/ISL9N308AS3ST
2600pF
O-263AB
O-220
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n312ad
Abstract: No abstract text available
Text: PWM Optimized ISL9N312AD3ST/ ISL9N312AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 12mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
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ISL9N312AD3ST/
ISL9N312AD3
1450pF
O-252
O-252)
O-251AA)
n312ad
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Untitled
Abstract: No abstract text available
Text: FQB95N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves
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FQB95N03L
2600pF
O-263AB
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Acopian Power Supply Model A24H1200
Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
Text: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5
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MICROWAVE ASSOCIATES ISOLATOR
Abstract: AS218 transistor
Text: Semiconductor Discretes for RF-Microwave Applications Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high-performance analog and mixed-signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and
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CAT501-09A
MICROWAVE ASSOCIATES ISOLATOR
AS218 transistor
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1E5 MARKING
Abstract: XA2 marking
Text: DATA SHEET SMS392x Series: Surface Mount General Purpose Schottky Diodes Applications • High volume commercial detectors, mixers, switches, and digital pulse forming systems Features • Tight parameter distribution • Available as singles, pairs, and dual series pairs
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SMS392x
J-STD-020
SMS3922,
SMS3923,
SMS3924
200042Q
1E5 MARKING
XA2 marking
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SMS3925-079LF Low Capacitance, High Voltage Schottky Diode Applications • Wireless handsets and general purpose switching systems Features Ultra-small SC-79 package SC-79 package rated MSL1, 260 C per JEDEC J-STD-020 Skyworks offers lead Pb -free, RoHS (Restriction of
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SMS3925-079LF
SC-79
J-STD-020
SMS3925079LF.
200132E
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SMS3925-079, SMS3925-079LF: Low Capacitance, High-Voltage Schottky Diode Features ● Silicon Schottky diode for detector applications ● Ultrasmall SC-79 package ● Designed for high-volume, low-cost applications ● Available in tape and reel packaging
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SMS3925-079,
SMS3925-079LF:
SC-79
J-STD-020
SMS3925-079
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8e1111
Abstract: Marvell PHY 88E1111 ml505 Marvell PHY 88E1111 Datasheet microblaze ethernet ML505 ML507 sgmii 88E1111 Marvell PHY 88E1111 Xilinx XAPP957 88E1111 and SFP applications
Text: Application Note: Virtex-5 Embedded Tri-Mode Ethernet Core R Virtex-5 Embedded Tri-Mode Ethernet MAC Hardware Demonstration Platform XAPP957 v1.1 October 8, 2008 Summary This application note describes a system using the Virtex -5 Embedded Tri-Mode Ethernet
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XAPP957
ML505
ML507development
ML507:
ml507
xapp957
UG170,
UG194,
UG347,
8e1111
Marvell PHY 88E1111 ml505
Marvell PHY 88E1111 Datasheet
microblaze ethernet
sgmii 88E1111
Marvell PHY 88E1111 Xilinx
88E1111 and SFP applications
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SMS392x Series: Surface Mount General Purpose Schottky Diodes Applications • High volume commercial detectors, mixers, switches, and digital pulse forming systems Features • Tight parameter distribution • Available as singles, pairs, and dual series pairs
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SMS392x
J-STD-020
SMS3922,
SMS3923,
SMS3924
200042R
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SMS3925-079LF: Low Capacitance, High Voltage Schottky Diode Applications • Wireless handsets and general purpose switching systems Features • Ultra-small SC-79 package • SC-79 package rated MSL1, 260 °C per JEDEC J-STD-020 Description The SMS3925-079LF is a 40 V, 0.6 pF RF Schottky diode
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SMS3925-079LF:
SC-79
J-STD-020
SMS3925-079LF
SMS3925079LF.
SC-79
SMS3925-079LF
200132H
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7030BL
Abstract: 5S1A
Text: ISL9N7030BLP3, ISL9N7030BLS3ST TM Data Sheet January 2001 File Number 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
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ISL9N7030BLP3,
ISL9N7030BLS3ST
7030BL
5S1A
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35KP
Abstract: FQB95N03L
Text: FQB95N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves
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FQB95N03L
2600pF
O-263AB
35KP
FQB95N03L
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Untitled
Abstract: No abstract text available
Text: SGMII and Gb Ethernet PCS IP Core User’s Guide April 2014 IPUG60_02.1 Table of Contents Chapter 1. Introduction . 4 Quick Facts . 4
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IPUG60
LFE5UM-85F-7MG756C
09L-SP1
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SMS3925-040LF
Abstract: SMS3925-079LF
Text: DATA SHEET SMS3925-040LF: 0402 Surface Mount Medium Barrier Schottky Diode Applications • Sensitive detector circuits • Sampling circuits • Mixer circuits Features • Low barrier height • Industry-standard 0402 footprint • Packages rated MSL1, 260 °C per JEDEC J-STD-020
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SMS3925-040LF:
J-STD-020
SMS3925-040LF
SC-79
SMS3925-079Ls
01506A
SMS3925-079LF
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853e16
Abstract: CSR BC4 8C701 82C316 CSR BC5 SRF 7016 804016 844016 BC5 CSR bc6 csr
Text: M306V8FJFP REJ03B0082-0131 Rev.1.31 Apr 18, 2005 SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION The M306V8FJFP are single-chip microcomputers using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 116-pin plastic molded QFP. These single-chip
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M306V8FJFP
REJ03B0082-0131
16-BIT
M306V8FJFP
M16C/60
116-pin
Unit2607
853e16
CSR BC4
8C701
82C316
CSR BC5
SRF 7016
804016
844016
BC5 CSR
bc6 csr
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Untitled
Abstract: No abstract text available
Text: Preliminary Low Capacitance High Voltage Schottky Diode SMS3925-079 Features • Silicon Schottky Diode for Detector Applications ■ Ultra Small SC-79 Package ■ Designed for High Volume, Low Cost Applications ■ Available in Tape and Reel Packaging Description
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SMS3925-079
SC-79
SMS3925
8E-09
8E-11
00E-05
SC-79
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Hld050r
Abstract: HLD050R6M
Text: 0 .6 A Shindengen BEIAmerica, Inc. HL Series FEA TU RES • High Reliability ■ Thermal Protection ■ Small Packaging ■ Standard Output Voltage Adjustment With External Potentiometer Custom Control Chip Yields Compact Size with Low Cost No Heat Sink Required
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OCR Scan
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8E113B7
Hld050r
HLD050R6M
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SMS1526-10
Abstract: No abstract text available
Text: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity
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AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
AK006M1-01
SMS1526-10
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