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    8K STATIC RAM 6264 Search Results

    8K STATIC RAM 6264 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4CT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation

    8K STATIC RAM 6264 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GR881

    Abstract: STATIC RAM 6264 6264 static RAM 6264 ram ram 6264 8k static ram 6264 6264* ram 6264 cmos ram 6264 8k
    Text: GR881 8K x 8 NON-VOLATILE RAM GR881 (8K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR881 is a 8192 word by 8 bits (8K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.


    Original     		GR881 GR881 2000/95/EC STATIC RAM 6264 6264 static RAM 6264 ram ram 6264 8k static ram 6264 6264* ram 6264 cmos ram 6264 8k PDF

    organizational structure samsung

    Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
    Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116


    OCR Scan     		LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256 PDF

    6264c

    Abstract: 710b MCM6264C MCM6264CJ12 MCM6264CP12 MCM6264CP15 MCM6264CP20 MCM6264CP25 MCM6264CP35
    Text: MOTOROLA Order this document by MCM6264C/D SEMICONDUCTOR TECHNICAL DATA 8K x 8 Bit Fast Static RAM MCM6264C The MCM6264C is fabricated using Motorola’s high–performance silicon–gate CMOS technology. Static design eliminates the need for external clocks or timing


    Original     		MCM6264C/D MCM6264C MCM6264C MCM6264C/D* 6264c 710b MCM6264CJ12 MCM6264CP12 MCM6264CP15 MCM6264CP20 MCM6264CP25 MCM6264CP35 PDF

    710b

    Abstract: 6264C MCM6264C MCM6264CJ12 MCM6264CP12 MCM6264CP15 MCM6264CP20 MCM6264CP25 MCM6264CP35
    Text: MOTOROLA Order this document by MCM6264C/D SEMICONDUCTOR TECHNICAL DATA 8K x 8 Bit Fast Static RAM MCM6264C The MCM6264C is fabricated using Motorola’s high–performance silicon–gate CMOS technology. Static design eliminates the need for external clocks or timing


    Original     		MCM6264C/D MCM6264C MCM6264C MCM6264C/D* 710b 6264C MCM6264CJ12 MCM6264CP12 MCM6264CP15 MCM6264CP20 MCM6264CP25 MCM6264CP35 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL PATA 8K x 8 Bit Fast Static RAM MCM6264C The MCM6264C is fabricated using Motorola's high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks ortiming strobes, while CMOS circuitry reduces power consumption and provides for


    OCR Scan     		MCM6264C ---------------6264C MCMH264CP12 MCMK264CP15 MCMB264CP20 MCM6264CP25 264CP35 MCM6264CJ12 MCM6264CJ15 MCM6264CJ20 PDF

    6264c

    Abstract: 710b 810B-03 MCM6264C MCM6264CJ12 MCM6264CJ12R2 MCM6264CJ15 MCM6264CP12 MCM6264CP15
    Text: MOTOROLA Order this document by MCM6264C/D SEMICONDUCTOR TECHNICAL DATA 8K x 8 Bit Fast Static RAM MCM6264C The MCM6264C is fabricated using M otorola’s high-perform ance silicon-gate CMOS technology. Static design eliminates the need for external clocks or timing


    OCR Scan     		MCM6264C/D MCM6264C MCM6264C 6264c 710b 810B-03 MCM6264CJ12 MCM6264CJ12R2 MCM6264CJ15 MCM6264CP12 MCM6264CP15 PDF

    MS6264L-10PC

    Abstract: MS6264L-10 MS6264-10PC MS6264L-70PC Mosel MS6264 MS6264L-10FC MS6264L-70FC MS6264-70PC r7777T MS6264L-70
    Text: MOSEL MS6264 8K x 8 CMOS Static RAM FEATURES DESCRIPTION • Available in 70/100 ns Max. The M OSEL MS6264 is a high performance, low power CM OS static RAM organized as 8192 words by 8 bits. The device supports easy m em ory expansion with both an active LOW chip enable (Et) and an active High chip


    OCR Scan     		MS6264 495mW MS6264L 550nW MS6264 500mV MS6264-70PC P28-1 MS6264-70FC MS6264L-10PC MS6264L-10 MS6264-10PC MS6264L-70PC Mosel MS6264 MS6264L-10FC MS6264L-70FC r7777T MS6264L-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6264C 8K x 8 Bit Fast Static RAM The MCM6264C is fabricated using Motorola’s high-performance siiicon-gate CMOS technology. Static design eliminates the need for external clocks or timing strobes, while CMOS circuitry reduces power consumption and provides for


    OCR Scan     		MCM6264C MCM6264C 6264C MCM6264CP12 MCM6264CP15 MCM6264CP20 MCM6264CP25 MCM6264CP35 MCM6264CJ12 MCM6264CJ15 PDF

    Untitled

    Abstract: No abstract text available
    Text: GREENWICH 8K x 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • • • • GR881 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM


    OCR Scan     		GR881 28-pin GR881 GR881. PDF

    NVR8

    Abstract: GREENWICH INSTRUMENTS
    Text: GREENWICH 8K X 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • • NVR8 Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM No limit to number of programming cycles Fits standard 28-pin socket


    OCR Scan     		28-pin NVR8 GREENWICH INSTRUMENTS PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSEL-VITELIC 4ûE D • ta3S33Tl 0 0 0 0 7 0 7 MOSEL T ■ HO MS6264A 8K x 8 High Speed CMOS Static RAM T -4 6 -2 3 -1 2 FEATURES DESCRIPTION • High spaed - 45/55 ns Max. The MOSEL MS6264A is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The


    OCR Scan     		ta3S33Tl MS6264A MS6264A S6264AL-45N P28-2 S6264AL-45P P28-1 S6264AL-45S S28-1 S6264AL-55N PDF

    MCM6264

    Abstract: mcm6264p20 MCM6264BP25 MCM6264BP
    Text: MOTOROLA H SEM ICO NDUCTO R TECHNICAL DATA MCM6264 8K x 8 Bit Fast Static RAM The MCM6264 is fabricated using Motorola's high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or tim ­ ing strobes, while CMOS circuitry reduces power consum ption and provides tor


    OCR Scan     		MCM6264 MCM6264 300-mil CM6264P15 MCM6264P20 MCM6264BP25 MCM6264BP35 MCM6264NJ15 MCM6264BP PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSEL MS6264A 8K x 8 High Speed CMOS Static RAM Preliminary FEATURES DESCRIPTION • High-speed - 20/25/30 ns The MOSEL MS6264A is a 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates from a single 5 volt supply. It is built with


    OCR Scan     		825mW MS6264A MS6264A 536-bit 28-pin PID002C S6264A-20PC S6264A-20N PDF

    MS6264A25NC

    Abstract: MS6264A-25SC MS6264A-20NC MS6264A20NC MS6264AL-20PC MS6264A-20RC MS6264A-20PC P28-2 MS6264A-25NC s286
    Text: MOSEL MS6264A 8K x 8 High Speed CMOS Static RAM Preliminary FEATURES DESCRIPTION • High-speed - 20/25/30 ns The MOSEL MS6264A is a 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates from a single 5 volt supply. It is built with


    OCR Scan     		MS6264A 825mW MS6264A 536-bit PID002C MS6264A-20PC P28-1 MS6264A-20NC MS6264A25NC MS6264A-25SC MS6264A20NC MS6264AL-20PC MS6264A-20RC P28-2 MS6264A-25NC s286 PDF

    M6264

    Abstract: MCM6264 MCM6264J35 MCM6264P motorola 6264 ram MCM6264J30 MCM6284
    Text: MO TOR OLA SC M EM ORY/ AS IC IME 0 I a3t>7S51 0070^15 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6264 8K x 8 Bit Fast Static RAM The MCM6264 Is a 66,536 bit static random access memory organized as 8192 words of 8 bits, fabricated using Motorola's high-performance silicon-gate CM OS technology.


    OCR Scan     		MCM6264 MCM6264 MCM6264P30 MCM6264P3S MCM6264P45 MCM6264P55 MCM6264WP30 MCM6264WP35 M6264WP45 MCM6264WP55 M6264 MCM6264J35 MCM6264P motorola 6264 ram MCM6264J30 MCM6284 PDF

    mk6264

    Abstract: No abstract text available
    Text: SGS-THOMSON IM MK6264 N,S 70/120 MK6264L(N,S)70/120 MK6264U(N,S)70/120 64K (8K x 8-BIT) CMOS STATIC RAM FEATURES □ 70 And 120 ns Address Access Time □ Equal Access And Cycle Times □ Static Operation * No Clocks Or Timing Strobes Required □ Low Vcc Data Retention 2 Volts


    OCR Scan     		MK6264 MK6264L MK6264U 28-Pin DIP-28 SOIC-28 A0-A12 PDF

    MCM6264P20

    Abstract: MCM6264P mcm6264bp25 mcm6264bnj35 MCM6264BP MCM6264 motorola 5118 setup MCM6264BP35 MCM6264BP-35 6264 static RAM
    Text: nOTOKOLA SC HEriORY/ASIC MOTOROLA S IE ]> b3b?251 QOflBTSe 7 b l • M0T3 ■ SEM ICO ND U C TO R mmmammt TECHNICAL DATA MCM6264 8K x 8 Bit Fast Static RAM The MCM6264 is fabricated using Motorola’s high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or tim­


    OCR Scan     		MCM6264 MCM6264 b3b72Sl 300-mil MCM6264P15 MCM6264P20 MCM6264BP25 MCM6264BP35 MCM6264P mcm6264bnj35 MCM6264BP motorola 5118 setup MCM6264BP-35 6264 static RAM PDF

    Untitled

    Abstract: No abstract text available
    Text: M O T O R O L A SC M E M O R Y / A S I C 4bE D b3b?251 OOflOfifl? b MO T 3 Order this data sheet g 1MCM6264D/D MOTOROLA SEMICONDUCTOR ( TECHNICAL DATA MCM6264D 8K x 8 Bit Fast Static RAM The MCM6264D is a 65,536 bit static random access memory organized as


    OCR Scan     		MCM6264D/D MCM6264D MCM6264D JU42I3-2 C74JJO PDF

    MS6264L-10

    Abstract: 6264-10 6264l MS6264-10
    Text: MOSEL _ MS6264 8K x 8 CMOS Static RAM FEATURES DESCRIPTION 1Available in 70/100 ns Max. «Autom atic power-down when chip disabled 1Low er pow er consumption: MS6264 - 4 9 5 m W (Max.) Operating - 82.5m W (Max.) Standby - 11mW (Max.) Power Down MS6264L


    OCR Scan     		MS6264 MS6264L MS6264 S6264 S6264-70PC S6264-70FC 6264L-70PC S6264L-70FC 6264-10PC S6264-10FC MS6264L-10 6264-10 6264l MS6264-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MCM6264C 8K x 8 Bit Fast Static RAM The M C M 6264C is fabricated using M otorola’s high-perform ance silicon-gate C M O S technology. Static design elim inates the need for external clocks or tim ing strobes, w hile C M O S circuitry reduces pow er consum ption and provides for g rea ter reliability.


    OCR Scan     		MCM6264C 6264C --------------6264C MCM6264CP12 MCM6264CP15 MCM6264CP20 MCM6264CP25 MCM6264CP35 MCM6264CJ12 MCM6264CJ15 PDF

    AS6C6264A

    Abstract: 6264 SRAM STATIC RAM 6264 AS6C6264A-70PCN SRAM 6264 6264 28pin 6264 static RAM AS6C6264 AS6C6264A-70PIN sram 6800
    Text: MARCH 2009 AS6C6264A 8K X 8 BIT LOW POWER CMOS SRAM FEATURES DESCRIPTION •   The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention


    Original     		AS6C6264A AS6C6264A MARCH/2009 6264 SRAM STATIC RAM 6264 AS6C6264A-70PCN SRAM 6264 6264 28pin 6264 static RAM AS6C6264 AS6C6264A-70PIN sram 6800 PDF

    STATIC RAM 6264

    Abstract: ram 6264 Hyundai Semiconductor 6264 Hyundai 6264 DD172 CY6264
    Text: CYPRESS PRELIMINARY CY6264 8K x 8 Static RAM Features active HIGH chip enable CE2 , and active LOW output enable (OE) and three-state • 55,70 ns access times drivers. Both devices have an automatic • CMOS for optimum speed/power power-down feature (CEi), reducing the


    OCR Scan     		CY6264 CY6264is 450-mil 300-mil 25iHbb2 STATIC RAM 6264 ram 6264 Hyundai Semiconductor 6264 Hyundai 6264 DD172 PDF

    MS6264CLL-10

    Abstract: MS6264CL-10 MS6264CLL-15 VDR 0047 MS6264CLL-80 ms6264cll MS6264C-80 MS6264CL-80 ZE10 ms6264cl-15
    Text: MOSEL MS6264C 8K x 8 Low Power CMOS SRAM FEATURES DESCRIPTION • Available in 80/100/150 ns Max. The MOSEL MS6264C is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The device supports easy memory expansion with both an


    OCR Scan     		MS6264C MS6264CL MS6264CLL MS6264C MS6264C-B0PC P28-4 MS6264C-80NC P28-5 MS6264CLL-10 MS6264CL-10 MS6264CLL-15 VDR 0047 MS6264CLL-80 ms6264cll MS6264C-80 MS6264CL-80 ZE10 ms6264cl-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MCM6264C 8K x 8 Bit Fast Static RAM The M C M 6264C is fab rica ted using M otorola's h igh-perform ance silicon-gate C M O S technology. S tatic design e lim ina te s the need lor external clocks or tim ing strobes,


    OCR Scan     		MCM6264C 6264C PDF