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    8MBIT NOR FLASH MEMORY WITH 3.3V AS INPUT VOLTAGE Search Results

    8MBIT NOR FLASH MEMORY WITH 3.3V AS INPUT VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    GRJ43DR7LV224KW01K Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd
    GRJ55DR7LV474KW01L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd
    GRJ55DR7LV334KW01K Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd

    8MBIT NOR FLASH MEMORY WITH 3.3V AS INPUT VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Defense Grade Platform Flash In-System Programmable Configuration PROM DS541 v2.1 June 25, 2014 Product Specification Features • In-System Programmable PROM for Configuration of Xilinx FPGAs • I/O Pins Compatible with Voltage Levels Ranging From 1.8V to 3.3V


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    DS541 XQF32P PDF

    electronique package

    Abstract: electronique cdx3 fujitsu Flash Memory Miniature Card AMD PCMCIA linear Flash Memory Card 2M - FLASH PCMCIA linear card MB98A81183-15 1M - FLASH PCMCIA linear card PCMCIA SRAM Memory Card 512k 5v eeprom Memory 32Mbit
    Text: FLASH OVERVIEW 16 18/9/98 4:12 pm Page 1 PRODUCT OVERVIEW FLASH MEMORY Fujitsu Flash Memories The Complete Package FLASH OVERVIEW 16 18/9/98 4:12 pm Page 2 Flash Memory Copyright 1998 Fujitsu Limited Tokyo, Japan, Fujitsu Mikroelektronik GmbH, Fujitsu Microelectronics Ltd and Fujitsu


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    D-85737 S-19268 FEDE-FLASH-0998 electronique package electronique cdx3 fujitsu Flash Memory Miniature Card AMD PCMCIA linear Flash Memory Card 2M - FLASH PCMCIA linear card MB98A81183-15 1M - FLASH PCMCIA linear card PCMCIA SRAM Memory Card 512k 5v eeprom Memory 32Mbit PDF

    CHN 936

    Abstract: CHN G4 019 xcf16pfs XCF02S RELIABILITY REPORT XCF04S XILINX SPARTAN XC2S50 XCF32PVO48 FG48 XC2V80 SPARTAN 3a dsp board schematics
    Text: 47 Platform Flash In-System Programmable Configuration PROMs R DS123 v2.12 January 28, 2008 Product Specification Features • • In-System Programmable PROMs for Configuration of Xilinx FPGAs • ♦ 3.3V Supply Voltage Low-Power Advanced CMOS NOR FLASH Process


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    DS123 CHN 936 CHN G4 019 xcf16pfs XCF02S RELIABILITY REPORT XCF04S XILINX SPARTAN XC2S50 XCF32PVO48 FG48 XC2V80 SPARTAN 3a dsp board schematics PDF

    XCF04S

    Abstract: xcf16pfs XCF32P-VOG48 XCF02S RELIABILITY REPORT 48-pin TSOP Package VO48 Xilinx Spartan-II 2.5V FPGA Family FSG48 XCF02S pcb
    Text: 47 Platform Flash In-System Programmable Configuration PROMs R DS123 v2.13.1 April 3, 2008 Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • ♦ 3.3V Supply Voltage Low-Power Advanced CMOS NOR Flash Process


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    DS123 XCF04S xcf16pfs XCF32P-VOG48 XCF02S RELIABILITY REPORT 48-pin TSOP Package VO48 Xilinx Spartan-II 2.5V FPGA Family FSG48 XCF02S pcb PDF

    spartan 3a

    Abstract: 48-pin TSOP Package VO48 XCF02S RELIABILITY REPORT xcf128x XCF32PFS48C Virtex 4 XC4VFX60 XC3S400 XCF02S pcb XCF32P Device Reliability report XILINX
    Text: 48 Platform Flash In-System Programmable Configuration PROMs R DS123 v2.15 July 07, 2008 Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • ♦ 3.3V Supply Voltage Low-Power Advanced CMOS NOR Flash Process


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    DS123 VOG20 spartan 3a 48-pin TSOP Package VO48 XCF02S RELIABILITY REPORT xcf128x XCF32PFS48C Virtex 4 XC4VFX60 XC3S400 XCF02S pcb XCF32P Device Reliability report XILINX PDF

    XC3S250E design guide

    Abstract: csb 485 E2
    Text: <BL Blue> R DS123 v2.11 February 1, 2007 Platform Flash In-System Programmable Configuration PROMs Product Specification Features • • In-System Programmable PROMs for Configuration of Xilinx FPGAs ♦ • 3.3V supply voltage Low-Power Advanced CMOS NOR FLASH Process


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    DS123 LVCMOS25 XC3S250E design guide csb 485 E2 PDF

    XCF01S

    Abstract: xcf16pfs XCF32PFS48 DS-121 XCF02S DS123 FS48 VO20 VO48 XCF02S pcb
    Text: <BL Blue> R DS123 v2.11.1 March 30, 2007 Platform Flash In-System Programmable Configuration PROMs Product Specification Features • • In-System Programmable PROMs for Configuration of Xilinx FPGAs ♦ 3.3V supply voltage • Low-Power Advanced CMOS NOR FLASH Process


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    DS123 VOG20 LVCMOS25 XCF01S xcf16pfs XCF32PFS48 DS-121 XCF02S DS123 FS48 VO20 VO48 XCF02S pcb PDF

    A0-A21

    Abstract: M29DW640D M76DW62000A M76DW63000A
    Text: M76DW63000A M76DW62000A 64Mbit x8/ x16, Multiple Bank, Boot Block Flash Memory and 8Mbit/4Mbit SRAM, 3V Supply, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • MULTIPLE MEMORY PRODUCT – 64 Mbit (8Mb x8 or 4Mb x16), Multiple Bank, Page, Boot Block, Flash Memory


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    M76DW63000A M76DW62000A 64Mbit M76DW63000A, 0020h LFBGA73 227Eh 2202h 2201h A0-A21 M29DW640D M76DW62000A M76DW63000A PDF

    Spartan-3 FPGA Family

    Abstract: xcf16pfs XCF02SVOG XCV400E 32mbit Serial nor flash XCF32PVO48 XC2V80
    Text: <BL Blue> R DS123 v2.10 December 8, 2006 Platform Flash In-System Programmable Configuration PROMS Product Specification Features • • In-System Programmable PROMs for Configuration of Xilinx FPGAs ♦ 3.3V supply voltage • Low-Power Advanced CMOS NOR FLASH Process


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    DS123 LVCMOS25 Spartan-3 FPGA Family xcf16pfs XCF02SVOG XCV400E 32mbit Serial nor flash XCF32PVO48 XC2V80 PDF

    XCF32P

    Abstract: XCF32PFS48C XCF08 xcf02s-vo20 pcb footprint FS48, and FSG48 XCF01S xcf32p-vog48 DS123 FS48 VO20
    Text: <BL Blue> Platform Flash In-System Programmable Configuration PROMS R DS123 v2.9 May 09, 2006 Product Specification Features • • In-System Programmable PROMs for Configuration of Xilinx FPGAs ♦ • 3.3V supply voltage Low-Power Advanced CMOS NOR FLASH Process


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    DS123 VOG20 LVCMOS25 XCF32P XCF32PFS48C XCF08 xcf02s-vo20 pcb footprint FS48, and FSG48 XCF01S xcf32p-vog48 DS123 FS48 VO20 PDF

    bx120

    Abstract: Intel AP-611 28F002BX 28F200BX 8Mbit nor flash memory with 3.3v as input voltage 4mbit rom
    Text: E AP-611 APPLICATION NOTE Boot Block Compatibility: 2/4-Mbit BX/BL with 2/4/8-Mbit BV PETER HAZEN SENIOR TECHNICAL MARKETING ENGINEER COLLIN K. ONG TECHNICAL MARKETING ENGINEER May 1995 Order Number: 292164-001 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including


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    AP-611 28F200BV 56-Lead bx120 Intel AP-611 28F002BX 28F200BX 8Mbit nor flash memory with 3.3v as input voltage 4mbit rom PDF

    xqf32p

    Abstract: XQF32PVO48M XQF32PV048 XQF32PV XQF32PV0 XQ32P nor flash VO48 XCF08 XC4VFX60
    Text: < B L B R DS541 v1.0 November 27, 2006 QPro Extended Temperature Platform Flash In-System Programmable Configuration PROM Product Specification Features • In-System Programmable PROM for Configuration of Xilinx FPGAs • I/O Pins Compatible with Voltage Levels Ranging From


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    DS541 XQF32P XQF32P 48-pin XCF32PVO48 XQF32P-V048 XQF32PVO48M XQF32PV048 XQF32PV XQF32PV0 XQ32P nor flash VO48 XCF08 XC4VFX60 PDF

    XCF02S

    Abstract: pcb footprint FS48, and FSG48 XCF32P DS123 FS48 VO20 VO48 XCF01S XCF32PVO48C XCF08PFS48C
    Text: R DS123 v2.6 March 14, 2005 4 2 Platform Flash In-System Programmable Configuration PROMS Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • Low-Power Advanced CMOS NOR FLASH Process • Endurance of 20,000 Program/Erase Cycles


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    DS123 XCF08P/XCF16P/XCF32P VOG48, FSG48 XCF01S/XCF02S/XCF04S XCF02S pcb footprint FS48, and FSG48 XCF32P DS123 FS48 VO20 VO48 XCF01S XCF32PVO48C XCF08PFS48C PDF

    XCF08P

    Abstract: XC4VLX25 XCF01SVOG20C XCF04SVO20C XCF01S XCF08PVO48C XC2V80 xcf04svog20c
    Text: R DS123 v2.7 July 11, 2005 4 2 Platform Flash In-System Programmable Configuration PROMS Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • Low-Power Advanced CMOS NOR FLASH Process • Endurance of 20,000 Program/Erase Cycles


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    DS123 XCF08P XC4VLX25 XCF01SVOG20C XCF04SVO20C XCF01S XCF08PVO48C XC2V80 xcf04svog20c PDF

    SANDISK NAND ID code

    Abstract: Sandisk TSOP MICRON NAND MLC DATASHEET intel nand flash transistor poly3 SANDISK NAND NAND FLASH BGA Datasheet Micron MLC Sandisk NAND Flash memory controller ecc nand flash gbit
    Text: P E R S P E C T I V E S O N P O R T A B L E D E S I G N Flash developments empower portables Flash chip sizes are shrinking as power goes down, yet the number of package options and IC technologies are exploding. T echnological innovation and a buyer’s market are combining to


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    PDF

    samsung date code decorder

    Abstract: SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp
    Text: KBA0101A0M / KBA0201A0M KBA0301A0M / KBA0401A0M Preliminary MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory *2 / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark


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    KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M 4Mx16) 2Mx16) 512Kx16) LIM-011025 samsung date code decorder SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp PDF

    XCF08PFSG48C

    Abstract: XCF01S Xilinx XCF04S pcb footprint FS48, and FSG48 XC3S500E XCF01SVO20 XCF32P DS123 FS48 VO20
    Text: 47 Platform Flash In-System Programmable Configuration PROMS R DS123 v2.8 December 29, 2005 Product Specification Features • • • • • • • • • • In-System Programmable PROMs for Configuration of Xilinx FPGAs Low-Power Advanced CMOS NOR FLASH Process


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    DS123 XCF08PFSG48C XCF01S Xilinx XCF04S pcb footprint FS48, and FSG48 XC3S500E XCF01SVO20 XCF32P DS123 FS48 VO20 PDF

    MCS-96 architecture overview

    Abstract: 80C196NP MCS-96 temperature controller using microcontroller function of internal code memory microcontroller 28F200BX 8XC196NP 196KC intel DOC 16 bit MCS-96 microcontroller
    Text: E AP-621 APPLICATION NOTE Interfacing the MCS 96 Microcontroller Family with Intel Flash MICHAEL CASTILLO MCD MARKETING December 1995 Order Number: 292176-001 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including


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    AP-621 specificatio2130 AB-57, AB-60, MCS-96 architecture overview 80C196NP MCS-96 temperature controller using microcontroller function of internal code memory microcontroller 28F200BX 8XC196NP 196KC intel DOC 16 bit MCS-96 microcontroller PDF

    Untitled

    Abstract: No abstract text available
    Text: KM28U800-T FLASH MEMORY 8M Bit 1M x8/512K x16 NOR Flash Memory FEATURES GENERAL DESCRIPTION • Single Voltage, 2.7 to 3.6 V for Read and Write operations • Organization 1,048,576 x 8 bit (Byte mode) / 524,288 x 16 bit (Word mode) • Fast Read Access Time : 90ns


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    KM28U800-T x8/512K 200nA 48-PIN 1220F 047MAX PDF

    PF38F1010C0ZTL0

    Abstract: PF38F1030 252636 PF38F
    Text: Intel Advanced+ Boot Block Flash Memory C3 C3 SCSP Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash Density: 16-, 32-Mbit — Async PSRAM Density: 16-Mbit Device Voltage — Flash VCC = 3.3 V; Flash VCCQ = 3.3 V — PSRAM VCC = 3.0 V; Flash VCCQ = 3.0 V


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    32-Mbit 16-Mbit Lock08C3B70 RD28F3208C3T90 RD28F3208C3B90 RD28F3204C3T70 RD28F3204C3B70 RD38F1010C0ZTL0 RD38F1010C0ZBL0 PF38F1010C0ZTL0 PF38F1030 252636 PF38F PDF

    SAMSUNG MCP

    Abstract: MCP Electronics MCP MEMORY Multi-Chip Package MEMORY UtRAM Density nand sdram mcp
    Text: Preliminary MCP MEMORY KAJ000A30M Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. May 12, 2003 Preliminary 0.1 Revised


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    KAJ000A30M 4Mx16) 512Kx16) 111-Ball SAMSUNG MCP MCP Electronics MCP MEMORY Multi-Chip Package MEMORY UtRAM Density nand sdram mcp PDF

    SAMSUNG MCP

    Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
    Text: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.


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    KBC00B7A0M 16Mx16) 4Mx16) 512Kx16) 100pF 111-Ball SAMSUNG MCP MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report PDF

    KM28U800

    Abstract: ba1g KM28U800-T
    Text: Preliminary FLASH MEMORY KM28U800-T/B 8M Bit 1M X8/512K x16 NOR Flash Memory FEATURES GENERAL DESCRIPTION • Single Voltage, 2.7 to 3.6 V tor Read and Write operations • Organization 1,048,576 x 8 bit (Byte mode) / 524,288 x 16 bit (Word mode) • Fast Read Access Time : 90 ns


    OCR Scan
    KM28U800-T/B X8/512K A18-A12 KM28U800 ba1g KM28U800-T PDF

    an8040

    Abstract: IC/T800
    Text: MITSUBISHI LSIs M6MFB/T08S2TP 8388608-BIT 1 M x 8-BIT/512k x 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2097152-BIT (256k x 8-BIT) CMOS STATIC RAM MCP (Multi Chip Package) DESCRIPTION FEATURES The MITSUBISHI M6MFB/T08S2TP is a Multi Chip Package (MCP) that contents 8-Mbit Flash memory and


    OCR Scan
    M6MFB/T08S2TP 8388608-BIT 8-BIT/512k 16-BIT) 2097152-BIT M6MFB/T08S2TP 82-pin bytes/524288 M5M29FB/T800) M5M5V208) an8040 IC/T800 PDF