is25c64B
Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are
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C0603X7R500-102KNE
Abstract: C0805X7R160-105KNE how to test smd MOSFET with digital multimeter R101-R103 lug thermistor ntc lug p26 smd S4 SMD diode mark smd schottky diode s4 smd schottky diode s4 SOD-123
Text: ISL6308EVAL1: Three Phase Buck Converter with Integrated High Current 5-12V Drivers Application Note July 11, 2005 AN1199.0 Author: Nasser A. Ismail Introduction The progress in many parts of modern power systems such as DDR/Chipset core voltage regulators, high current low
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ISL6308EVAL1:
AN1199
ISL6308EVAL1
C0603X7R500-102KNE
C0805X7R160-105KNE
how to test smd MOSFET with digital multimeter
R101-R103
lug thermistor
ntc lug
p26 smd
S4 SMD diode mark
smd schottky diode s4
smd schottky diode s4 SOD-123
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C49-C54
Abstract: 12V 10A voltage regulators 805 smd code capacitor ntc lug SMD capacitors CODES C0805COG500-101JNE R38-R42 transistor SMD p12 transistor SMD p23 BAV99TA-T
Text: ISL6310EVAL1Z: Two Phase Buck Converter with Integrated High Current 5V to 12V Drivers Application Note December 12, 2006 AN1197.1 Author: Nasser A. Ismail Introduction The progress in many parts of modern power systems such as DDR/Chipset core voltage regulators, high current low
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ISL6310EVAL1Z:
AN1197
ISL6310EVAL1Z
C49-C54
12V 10A voltage regulators
805 smd code capacitor
ntc lug
SMD capacitors CODES
C0805COG500-101JNE
R38-R42
transistor SMD p12
transistor SMD p23
BAV99TA-T
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M12L64322A-5TG
Abstract: M12L64322A M12L64322A-6T M12L64322A-6TG M12L64322A-7T m12l64322a7tg
Text: ESMT M12L64322A Revision History Revision 0.1 Dec. 28 1998 -Original Revision 0.2(Jan. 29 1999) -Add page 45 "Packing Dimension" Revision 0.3(Apr. 20 2000) -Modify 6 tss from 2 to 1.5ns.(Page 7) Revision 0.4(May. 09 2001) - 64ms refresh period (4K cycle) -> 15.6 s refresh interval (P.1)
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M12L64322A
86-LEAD
400mil)
M12L64322A-5TG
M12L64322A
M12L64322A-6T
M12L64322A-6TG
M12L64322A-7T
m12l64322a7tg
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IS42S32160C
Abstract: 42S32160C is42s32160 IS42S32160C-75BLI
Text: IS42S32160C 16Mx32 512Mb SYNCHRONOUS DRAM DESCRIPTION: FEATURES: • • • • • • • • Clock frequency: 166, 133 MHz Fully synchronous operation Internal pipelined architecture Programmable Mode – CAS# Latency: 2 or 3 – Burst Length: 1, 2, 4, 8, or full page
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IS42S32160C
16Mx32
512Mb
IS42S32160C
IS42S32160C-75BL
IS42S32160C-6BL
8x13mm
42S32160C
is42s32160
IS42S32160C-75BLI
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Untitled
Abstract: No abstract text available
Text: IS42S32160A1 4M Words x 32 Bits x 4 Banks 512-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Concurrent auto precharge · Clock rate:166/143 MHz · Fully synchronous operation · Internal pipelined architecture · Four internal banks (4M x 32bit x 4bank) · Programmable Mode
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IS42S32160A1
512-MBIT)
32bit
cycles/64ms
8x13mm,
IS42S32160A1
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16MX32
Abstract: IS42RM32160C
Text: IS42SM32160C IS42RM32160C 16Mx32 512Mb Mobile Synchronous DRAM FEATURES: • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full
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IS42SM32160C
IS42RM32160C
16Mx32
512Mb
IS42SM/RM32160C
IS42SM32160C-7BLI
IS42SM32160C-75EBLI
8x13mm
IS42RM32160C
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Untitled
Abstract: No abstract text available
Text: IS42S32800D 2M Words x 32 Bits x 4 Banks 256-Mbit Synchronous DRAM PRELIMINARY INFORMATION OCTOBER 2007 FEATURES DESCRIPTION • Concurrent auto precharge • Clock rate:166/143 MHz • Fully synchronous operation • Internal pipelined architecture • Four internal banks (2M x 32bit x 4bank)
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IS42S32800D
256-Mbit)
32bit
cycles/64ms
8x13mm,
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is62c51216al
Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital
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IS42S32800D-7BLI
Abstract: IS42S32800D IS42S32800D-7TLI IS42S32800D-6BL IS42S32800D-6TL IS42S32800D-7TL IS42S32800D-6TLI
Text: IS42S32800D 2M Words x 32 Bits x 4 Banks 256-Mbit Synchronous DRAM PRELIMINARY INFORMATION NOVEMBER 2007 FEATURES DESCRIPTION • Concurrent auto precharge • Clock rate:166/143 MHz • Fully synchronous operation • Internal pipelined architecture • Four internal banks (2M x 32bit x 4bank)
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IS42S32800D
256-Mbit)
32bit
cycles/64ms
8x13mm,
IS42S32800D-7BLI
IS42S32800D
IS42S32800D-7TLI
IS42S32800D-6BL
IS42S32800D-6TL
IS42S32800D-7TL
IS42S32800D-6TLI
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Untitled
Abstract: No abstract text available
Text: W9425G6EB 4 M x 4 BANKS × 16 BITS DDR SDRAM Table of Contents1. GENERAL DESCRIPTION. 4 2. FEATURES . 4
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W9425G6EB
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M53D128168A
Abstract: No abstract text available
Text: ESMT M53D128168A Operation Temperature Condition -40°C~85°C Mobile DDR SDRAM 2M x 16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe DQS
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M53D128168A
M53D128168A
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Untitled
Abstract: No abstract text available
Text: IS42S32800 2M Words x 32 Bits x 4 Banks 256-Mbit Synchronous DRAM P JANUARY 2008 FEATURES DESCRIPTION • • • • • • The ISSI IS42S32800 is a high-speed CMOS configured as a quad 2M x 32 DRAM with asynchronous interface (all signals are registered on the positive
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IS42S32800
256-Mbit)
IS42S32800
termina96
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29LV160
Abstract: No abstract text available
Text: MX29LV160T/B & MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV160T/B
MX29LV160AT/AB
16M-BIT
2Mx8/1Mx16]
70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
MAR/26/2003
29LV160
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29LV160
Abstract: 29lv160 Flash
Text: MX29LV160T/B & MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV160T/B
MX29LV160AT/AB
16M-BIT
2Mx8/1Mx16]
70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
PM0866
29LV160
29lv160 Flash
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IS42VM32160C
Abstract: No abstract text available
Text: IS42VM32160C 16Mx32 512Mb Mobile Synchronous DRAM FEATURES: • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full
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IS42VM32160C
16Mx32
512Mb
IS42VM32160C
IS42VM32160C-75BL
8x13mm
IS42VM32160C-75BLI
IS42VM32160C-75BI
IS42VM32160C-10BLI
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IS42S32800B-6BLI
Abstract: IS42S32800B IS42S32800B-6TLI
Text: ISSI IS42S32800B 2M Words x 32 Bits x 4 Banks 256-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Concurrent auto precharge · Clock rate:166/143 MHz · Fully synchronous operation · Internal pipelined architecture · Four internal banks (2M x 32bit x 4bank)
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IS42S32800B
256-MBIT)
32bit
cycles/64ms
cycles/32ms
8x13mm,
IS42S32800B-6BLI
IS42S32800B
IS42S32800B-6TLI
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AN1211
Abstract: smd schottky diode s4 SOD-123 1211 transistor PDF DOWN LOAD c0805x7r500-223kne c1206x7r160 smd diode S7 R50 SOT23 SMD code P32 23 smd ntc lug p28 smd
Text: ISL8103EVAL1: Three Phase Buck Converter with Integrated High Current 5-12V Drivers Application Note January 3, 2006 AN1211.0 Author: Nasser A. Ismail Introduction The progress in many parts of modern power systems such as DDR/Chipset core voltage regulators, high current low
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ISL8103EVAL1:
AN1211
ISL8103EVAL1
smd schottky diode s4 SOD-123
1211 transistor PDF DOWN LOAD
c0805x7r500-223kne
c1206x7r160
smd diode S7
R50 SOT23 SMD code
P32 23 smd
ntc lug
p28 smd
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is42s32160
Abstract: No abstract text available
Text: IS42S32160C 16Mx32 512Mb SYNCHRONOUS DRAM DESCRIPTION: FEATURES: • • • • • • • • Clock frequency: 166, 133 MHz Fully synchronous operation Internal pipelined architecture Programmable Mode – CAS# Latency: 2 or 3 – Burst Length: 1, 2, 4, 8, or full page
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IS42S32160C
16Mx32
512Mb
IS42S32160C
90-Ball)
is42s32160
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Automotive Product Selector Guide
Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
Text: Automotive Market Support Introduction ISSI has been supporting the Automotive Market since 1999. In 2001, ISSI began to broaden its support of the market by introducing the Automotive Business Unit. The purpose of this business unit is to provide cross-functional unit support within ISSI to continually enhance the Automotive Infrastructure from
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8X13
Abstract: No abstract text available
Text: EtronTech EM638325 2M x 32 Synchronous DRAM SDRAM (Rev 1.7 Oct./2007) Ordering Information Features Clock rate: 200/183/166/143 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (512K x 32bit x 4bank) Programmable Mode - CAS# Latency: 2 or 3
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EM638325
32bit
cycles/64ms
8x13mm,
EM638325BK-5G
200MH
90-FBGA,
8X13
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IS42S32800B-6BLI
Abstract: IS42S32800B-7BL is42S32800B-7B 2M Words x 32 Bits x 4 Banks (256-MBIT) IS42S32800B-6TI IS42S32800B-7BLI IS42S32800B-7TLI IS42S32800B
Text: ISSI IS42S32800B 2M Words x 32 Bits x 4 Banks 256-MBIT SYNCHRONOUS DYNAMIC RAM July 2006 FEATURES DESCRIPTION • Concurrent auto precharge · Clock rate:166/143 MHz · Fully synchronous operation · Internal pipelined architecture · Four internal banks (2M x 32bit x 4bank)
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IS42S32800B
256-MBIT)
32bit
cycles/64ms
8x13mm,
IS42S32800B-6BLI
IS42S32800B-7BL
is42S32800B-7B
2M Words x 32 Bits x 4 Banks (256-MBIT)
IS42S32800B-6TI
IS42S32800B-7BLI
IS42S32800B-7TLI
IS42S32800B
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Untitled
Abstract: No abstract text available
Text: 2F., No.512, Sianjheng 2nd Rd., Chu-Pei City, Hsinchu County, Taiwan 302, ROC TEL: +886-3-5585138 FAX:+886-3-5585139 New Product Release Part No: EM48AM3284LBB This is to notify our valuable customers that EOREX had launched its new version device for 16M*32 Mobile
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EM48AM3284LBB
FBGA-90Ball
EM48AM3284LBB,
EM48AM3284LBB
EM48AM3284LBA.
EM48AM3284LBA)
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IS42S32800B
Abstract: 42S32800B IS42S32800B-7BLI IS42S32800B-7B IS42S32800B-6BI IS42S32800B-6BLI IS42S32800B7BL IS42S32800B-6TI T17 07 IS42S32800B-7TLI
Text: IS42S32800B 2M Words x 32 Bits x 4 Banks 256-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Concurrent auto precharge · Clock rate:166/143 MHz · Fully synchronous operation · Internal pipelined architecture · Four internal banks (2M x 32bit x 4bank) · Programmable Mode
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IS42S32800B
256-MBIT)
32bit
cycles/64ms
cycles/32ms
8x13mm,
MO-207
IS42S32800B
42S32800B
IS42S32800B-7BLI
IS42S32800B-7B
IS42S32800B-6BI
IS42S32800B-6BLI
IS42S32800B7BL
IS42S32800B-6TI
T17 07
IS42S32800B-7TLI
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