900V Search Results

900V Result Highlights (5)

Part	Manufacturer	Description
RAA2231814GSP#MA0	Renesas Electronics Corporation	900V Off-Line Flyback Regulator
RAA2231814GSP#HA0	Renesas Electronics Corporation	900V Off-Line Flyback Regulator
2SK1775-E	Renesas Electronics Corporation	Nch Single Power Mosfet 900V 8A 1600Mohm To-3Pfm
2SK1808-E	Renesas Electronics Corporation	Nch Single Power Mosfet 900V 4A 4000Mohm To-220Fm
2SK1647L-E	Renesas Electronics Corporation	Nch Single Power Mosfet 900V 2A 7000Mohm LDPAK(L)/To-262

900V Price and Stock

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Panasonic Electronic Components ERJ-UP3F3900V RES 390 OHM 1% 1/4W 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERJ-UP3F3900V	Cut Tape	12,382		1	1 $0.21 10 $0.106 100 $0.0609 1000 $0.03913 10000 $0.03913	Buy Now
	ERJ-UP3F3900V	Digi-Reel	12,382		1	1 $0.21 10 $0.106 100 $0.0609 1000 $0.03913 10000 $0.03913	Buy Now
	ERJ-UP3F3900V	Reel	10,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.02832	Buy Now
RS	ERJ-UP3F3900V	Bulk			5,000	1 - 10 - 100 - 1000 - 10000 $0.023	Get Quote
Panasonic Electronic Components ERJ-PB6D3900V RES SMD 390 OHM 0.5% 1/4W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERJ-PB6D3900V	Cut Tape	4,895		1	1 $0.22 10 $0.121 100 $0.0701 1000 $0.04277 10000 $0.04277	Buy Now
	ERJ-PB6D3900V	Digi-Reel	4,895		1	1 $0.22 10 $0.121 100 $0.0701 1000 $0.04277 10000 $0.04277	Buy Now
Avnet Americas	ERJ-PB6D3900V	Ammo Pack		19 Weeks, 3 Days	1	1 $0.259 10 $0.117 100 $0.055 1000 $0.038 10000 $0.035	Buy Now
	ERJ-PB6D3900V	Reel		15 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.02712	Buy Now
Master Electronics	ERJ-PB6D3900V					1 - 10 - 100 - 1000 - 10000 $0.0289	Buy Now
Panasonic Electronic Components ERJ-H3ED3900V RES 390 OHM 0.5% 1/8W 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERJ-H3ED3900V	Cut Tape	4,850		1	1 $0.24 10 $0.126 100 $0.0728 1000 $0.04736 10000 $0.04736	Buy Now
	ERJ-H3ED3900V	Digi-Reel	4,850		1	1 $0.24 10 $0.126 100 $0.0728 1000 $0.04736 10000 $0.04736	Buy Now
Panasonic Electronic Components ERJ-U08F3900V RES 390 OHM 1% 1/4W 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERJ-U08F3900V	Digi-Reel	4,790		1	1 $0.22 10 $0.114 100 $0.0659 1000 $0.04261 10000 $0.04261	Buy Now
	ERJ-U08F3900V	Cut Tape	4,790		1	1 $0.22 10 $0.114 100 $0.0659 1000 $0.04261 10000 $0.04261	Buy Now
Avnet Americas	ERJ-U08F3900V	Reel		22 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.02826	Buy Now
Master Electronics	ERJ-U08F3900V					1 - 10 - 100 - 1000 - 10000 $0.0302	Buy Now
Panasonic Electronic Components ERA-3VEB3900V RES 390 OHM 0.1% 1/8W 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERA-3VEB3900V	Digi-Reel	3,177		1	1 $0.39 10 $0.281 100 $0.1955 1000 $0.13045 10000 $0.13045	Buy Now
	ERA-3VEB3900V	Cut Tape	3,177		1	1 $0.39 10 $0.281 100 $0.1955 1000 $0.13045 10000 $0.13045	Buy Now
Master Electronics	ERA-3VEB3900V					1 - 10 - 100 - 1000 $0.16 10000 $0.1172	Buy Now

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900V Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
A12 diode Abstract: MOSFET 900V TO-220 MOSFET 50V 100A TO-220 power mosfet 900v Text: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.5 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This	Original	TSM3N90 O-220 ITO-220 O-251 O-252 TSM3N90 TSM3N90CH TSM3N90CP TSM3N90CZ O-251 A12 diode MOSFET 900V TO-220 MOSFET 50V 100A TO-220 power mosfet 900v	PDF
Untitled Abstract: No abstract text available Text: STE30NK90Z N-channel 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESH MOSFET General features Type VDSS RDS on ID Pw STE30NK90Z 900V <0.26Ω 28A 500W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ) s ( ct	Original	STE30NK90Z	PDF
1N4148 SPACE POWER ELECTRONICS INC Abstract: PA97DR Text: PA97DR PA97DR P r o PA97DR duct Innovation From Power Operational Amplifiers FEATURES DESCRIPTION • HIGH VOLTAGE — 900V ±450V • LOW QUIESCENT CURRENT — 600µA • HIGH OUTPUT CURRENT — 10mA APPLICATIONS • MASS SPECTROMETERS • SCANNING COILS	Original	PA97DR PA97DR SIP05 PA97DRU 777-PA97DR 1N4148 SPACE POWER ELECTRONICS INC	PDF
APT10035LLL Abstract: APT46GA90JD40 MIC4452 max4170 Text: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT46GA90JD40 E145592 APT10035LLL APT46GA90JD40 MIC4452 max4170	PDF
2SC3149 Abstract: NPN 800V Text: Product Specification www.jmnic.com 2SC3149 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage: VCBO=900V Min ・Fast switching speed. ・Wide ASO (Safe Operating Area) APPLICATIONS ・800V/1.5A switching regulator applications	Original	2SC3149 O-220C 00V/1 10MHz 2SC3149 NPN 800V	PDF
Untitled Abstract: No abstract text available Text: 2SK1983-01 N-channel MOS-FET FAP-IIA Series 900V > Features - 4Ω 3A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators	Original	2SK1983-01	PDF
id 0835 Abstract: STW8NB90 STH8NB90FI Text: STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW8NB90 900 V < 1.45 Ω 8A STH8NB90FI 900 V < 1.45 Ω 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED	Original	STW8NB90 STH8NB90FI O-247/ISOWATT218 id 0835 STW8NB90 STH8NB90FI	PDF
AP09N90W Abstract: No abstract text available Text: AP09N90W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ 100% Avalanche test ▼ Fast Switching ▼ Simple Drive Requirement G BVDSS 900V RDS ON 1.2Ω ID 8.6A S Description AP09N90 series are specially designed as main switching devices for	Original	AP09N90W AP09N90 265VAC 100us 100ms AP09N90W	PDF
Untitled Abstract: No abstract text available Text: 2SK2528-01 N-channel MOS-FET FAP-II Series 900V > Features - 3,6Ω 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators	Original	2SK2528-01	PDF
STW9NB90 Abstract: No abstract text available Text: STW9NB90 N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH MOSFET TYPE STW9NB90 • ■ ■ ■ ■ ■ V DSS R DS on ID 900 V <1Ω 9.7 A TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED	Original	STW9NB90 O-247 STW9NB90	PDF
2SC3156 Abstract: No abstract text available Text: Inchange Semiconductor Product Specification 2SC3156 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage : VCBO=900V Min ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications	Original	2SC3156 2SC3156	PDF
Untitled Abstract: No abstract text available Text: DIGITRON SEMICONDUCTORS 1N3670A-1N3673A STANDARD RECOVERY RECTIFIERS ELECTRICAL CHARACTERISTICS Symbol 1N3670 1N3671 1N3672 1N3673 Repetitive peak reverse voltage Characteristics VRRM 700V 800V 900V 1000V Maximum RMS reverse voltage VRMS 490V 560V 630V 700V	Original	1N3670A-1N3673A 1N3670 1N3671 1N3672 1N3673 MIL-PRF-19500,	PDF
P5NB90FP Abstract: P5NB90 STP5NB90 STP5NB90FP Text: STP5NB90 STP5NB90FP N - CHANNEL 900V - 2.3 Ω - 5A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE ST P5NB90 ST P5NB90FP • ■ ■ ■ ■ V DSS R DS on ID 900 V 900 V < 2.5 Ω < 2.5 Ω 5 A 5 A TYPICAL RDS(on) = 2.3 Ω EXTREMELY HIGH dv/dt CAPABILITY	Original	STP5NB90 STP5NB90FP O-220/TO-220FP P5NB90 P5NB90FP P5NB90FP P5NB90 STP5NB90 STP5NB90FP	PDF
STB3NC90 Abstract: STB3NC90Z K900 Text: STB3NC90Z N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH III MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB3NC90 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED	Original	STB3NC90Z STB3NC90 STB3NC90 STB3NC90Z K900	PDF

APT64GA90B Abstract: MIC4452 DIODE 76A Text: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT64GA90B APT64GA90S APT64GA90B MIC4452 DIODE 76A	PDF
2SK2668 Abstract: FP3W90HVX2 Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2668 N-Channel Enhancement type OUTLINE DIMENSIONS FP3W90HVX2 Case : ITO-3P (Unit : mm) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.	Original	2SK2668 FP3W90HVX2 2SK2668 FP3W90HVX2	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 6N90Z Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N90Z is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a	Original	6N90Z 6N90Z 6N90Zat QW-R502-953	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 5N90 Power MOSFET 5A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a minimum	Original	5N90Lat QW-R502-499	PDF
2sk1464 Abstract: No abstract text available Text: 2SK1464 2076 U H U ltra h ig h V o lta g e S eries V Ds s = 900V N Channel Power M O S F E T • f'3467 F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Converters. A bso lu te M axim um R a tin g s at Ta = 25°C Drain to Source Voltage	OCR Scan	2SK1464 VDS--900V, 2SK1464 Tc-25	PDF
Untitled Abstract: No abstract text available Text: ^ litr o n PR O DU CT DEVICES.INC. 1 1 7 7 BLUE H ERON BLVD. • RIVIERA BEACH, FLORIDA 33404 T E L : 407 848-4311 • TLX: 51-3435 • F A X : (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 900V, 4.0A, 2.4 Q SYMBOL Dr ai n-source Volt.(l)	OCR Scan	SDF4N90 SDF4N90 00A/jJ 300iiS,	PDF
1MBH50-090 Abstract: electrical symbols LC resonant circuit schematic symbols lc50a Text: 1MBH50-090 50A Fuji Power Module Outline Drawings • Features • High Voltage (900V) • Low Saturation Voltage • Voltage Drive a 2.0 1 ■ A p p lications 5.45 5 .45 • Resonant Mode eS I—'}J i h“ != .1 — 1. cd • Microwave Ovens • Power Supply	OCR Scan	1MBH50-090 T03PL 1MBH50-090 electrical symbols LC resonant circuit schematic symbols lc50a	PDF
pj 87 diode Abstract: diode pj 87 te2s 2SK2653-01R Text: F U JI StHlELTUtìliE N-channel MOS-FET 2SK2653-01R FAP-IISSeries 900V Features 2,5 £2 6A 80 W > Outline Drawing TO-3PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 3 0 V G uarantee Repetitive Avalanche Rated	OCR Scan	2SK2653-01R Vcc-80V; pj 87 diode diode pj 87 te2s	PDF
FS3KM18A Abstract: FS3KM-18A FS3KM18 71Q1 Text: MITSUBISHI Neh POWER MOSFET FS3KM-18A HIGH-SPEED SWITCHING USE FS3KM-18A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 V d s s .900V rDS ON (MAX) .4.0Í2	OCR Scan	FS3KM-18A O-22QFN 71Q-123 FS3KM18A FS3KM-18A FS3KM18 71Q1	PDF
Untitled Abstract: No abstract text available Text: \ _ _ _ _ _ _ _ 1£ S D - 3 9 9 Q 0 - 0 10 1 BEAU 90 fH 900V 10A \\ NOTES; MATERIAL: SEE TABLE FINISHES; SEE TABLE PRODUCT SPECIFICATION; NOT PACKAGING; NET REQUIRED NATES WITH; 90 SERIES PLOGGABLE TERMINAL BLOCK INCH DIMS ARE SHOWN IN PARENTHESIS XXX "XX" REFERS TO THE NOMBER OF CIRCUIT POSITIONS	OCR Scan	SD-3B120-003 9059XX SD-29900-010	PDF

900V Search Results

900V Result Highlights (5)

900V Price and Stock

Panasonic Electronic Components ERJ-UP3F3900V

Panasonic Electronic Components ERJ-PB6D3900V

Panasonic Electronic Components ERJ-H3ED3900V

Panasonic Electronic Components ERJ-U08F3900V

Panasonic Electronic Components ERA-3VEB3900V

900V Datasheets Context Search

A12 diode

Untitled

1N4148 SPACE POWER ELECTRONICS INC

APT10035LLL

2SC3149

Untitled

id 0835

AP09N90W

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STW9NB90

2SC3156

Untitled

P5NB90FP

STB3NC90

APT64GA90B

2SK2668

Untitled

Untitled

2sk1464

Untitled

1MBH50-090

pj 87 diode

FS3KM18A

Untitled